onsemi 2SC4617G

Overview

2SC4617G from onsemi is an NPN silicon general-purpose amplifier transistor in SC−75 (SOT-416) package, rated for V_(BR)CEO = 50 V, I_C = 100 mA, and h_FE = 120–560 (typ. 210–460), with V_CE(sat) ≤ 0.4 V at I_C = 60 mA/I_B = 5 mA. It serves as a low-power signal amplification device in compact consumer audio preamps and sensor interface stages.

For engineers reviewing the 2SC4617G datasheet, pinout, applications, or equivalent options, key selection criteria include its SC−75 footprint compatibility, guaranteed h_FE range across production lots, AEC−Q101 qualification status (for S-prefix variants), and low saturation voltage enabling efficient Class-A biasing in space-constrained analog front-ends.

Technical Context

This device operates as a single NPN bipolar junction transistor optimized for linear amplification-not switching-under low-current, low-voltage conditions (V_CE ≤ 10 V, I_C ≤ 100 mA). Its f_T = 180 MHz supports audio and low-MHz RF preamplifier use, while COB = 2.0 pF minimizes Miller effect in high-gain configurations.

Thermal design relies on FR-4 PCB mounting per JEDEC standard footprint, delivering P_D = 125 mW at T_A = 25°C. Junction temperature is limited to 150°C, with storage range spanning −55°C to +150°C-enabling operation in extended industrial ambient environments.

Key Specifications

Pinout & Package

The 2SC4617G is housed in the SC−75 (SOT-416) surface-mount package: 1.60 mm × 0.80 mm × 0.80 mm body with 1.00 mm lead pitch. Pin 1 = Base, Pin 2 = Emitter, Pin 3 = Collector (Style 1).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN general-purpose amplifier applications.

Compared with BC846B,215 and MMBT3904LT1G, the 2SC4617G delivers superior gain density (h_FE/mm²) and lower saturation voltage in the smallest available footprint-making it optimal for ultra-compact, battery-sensitive analog signal chains where 50 V rating suffices.

Availability

2SC4617G is available at Aetrix Electronics and suitable for audio pre-amplifier stages, temperature sensor interfaces, low-power RF front-ends, and automotive cabin sensor nodes requiring stable component supply and consistent parametric performance across production batches.

Supply support for 2SC4617G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

onsemi (formerly ON Semiconductor) is a global semiconductor supplier focused on energy-efficient electronics, with leadership in power management, analog, sensing, and connectivity solutions.

The 2SC4617G belongs to onsemi's general-purpose bipolar transistor product line, designed specifically for cost-sensitive, space-constrained linear amplification tasks in consumer, industrial, and automotive electronics.

FAQ

What is the maximum collector-emitter voltage rating for the 2SC4617G?

The 2SC4617G has a maximum collector-emitter breakdown voltage V_(BR)CEO of 50 Vdc at I_C = 1.0 mA and T_J = 25°C. This rating defines the absolute upper limit for voltage applied between collector and emitter with base open; operation above this value risks irreversible avalanche breakdown and device failure. Designers should maintain at least 20% derating margin-i.e., ≤40 V-in production circuits to ensure long-term reliability under temperature and process variation.

Is the 2SC4617G suitable for automotive applications?

The 2SC4617G itself is not AEC−Q101 qualified; however, its S-prefix variant S2SC4617G is fully qualified and PPAP capable. The 2SC4617G shares identical electrical specifications and SC−75 packaging with the S2SC4617G, differing only in traceability, lot control, and test screening. For non-safety-critical automotive cabin modules (e.g., ambient light sensing), the 2SC4617G may be used-but formal qualification requires the S2SC4617G part number.

What is the typical transition frequency (f_T) of the 2SC4617G and how does it affect circuit design?

The 2SC4617G has a typical transition frequency f_T of 180 MHz at V_CE = 12 V, I_C = 2.0 mA, and f = 30 MHz. This indicates usable gain up to ~20–30 MHz in practical amplifier configurations. Designers must account for decreasing h_FE beyond f_T/10 and ensure proper high-frequency compensation-especially in multi-stage amplifiers-to avoid instability. The 2SC4617G is not intended for UHF or microwave applications but performs well in AM/FM IF strips and sub-50 MHz sensor signal conditioning.

How does the SC−75 package of the 2SC4617G compare to SOT-23 in terms of board space and thermal performance?

The 2SC4617G's SC−75 (SOT-416) package measures 1.60 × 0.80 mm, occupying ~35% less board area than standard SOT-23 (3.0 × 1.4 mm). However, its smaller copper pad area and thinner mold compound reduce thermal resistance: R_θJA is 1000°C/W (vs. ~200°C/W for SOT-23), limiting continuous power dissipation to 125 mW on FR-4. Thus, the 2SC4617G excels in space-constrained, low-duty-cycle analog stages-not high-power linear regulators or switching elements.

What is the guaranteed h_FE range for the 2SC4617G and why does it matter for amplifier design?

The 2SC4617G guarantees h_FE from 120 to 560 at V_CE = 6.0 V and I_C = 1.0 mA. This wide spread means circuit gain and bias point vary significantly across units. Designers must use emitter degeneration resistors or feedback networks-not fixed-base bias-to stabilize Q-point and ensure consistent amplification. Relying on typical h_FE = 210–460 alone risks cutoff or saturation in production units, especially over temperature.