onsemi 2SC4617T1G

Overview

2SC4617T1G from onsemi is an NPN silicon general-purpose amplifier transistor in SC−75 (SOT-416) package, rated for V_(BR)CEO = 50 V, I_C = 100 mA, P_D = 125 mW, with typical h_FE = 210–460 and V_CE(sat) < 0.4 V at I_C = 60 mA/I_B = 5 mA. It serves as a low-power linear amplifier or switching element in compact consumer and industrial signal conditioning circuits.

For engineers reviewing the 2SC4617T1G datasheet, pinout, applications, or equivalent options, key selection factors include its SC−75 footprint constraints, guaranteed h_FE range (120–560), f_T = 180 MHz, low saturation voltage, and AEC−Q101 qualification for automotive-grade reliability in space-constrained designs.

Technical Context

This device operates as a discrete NPN bipolar junction transistor optimized for small-signal amplification and low-current switching. Its design emphasizes high DC current gain stability across temperature (−55°C to +150°C) and low output capacitance (C_OB = 2.0 pF), supporting stable gain in RF-adjacent audio and sensor interface stages.

The SC−75 package enables surface-mount integration with minimal board area while maintaining thermal performance up to T_J = 150°C. Electrical behavior is characterized under pulsed conditions (pulse width ≤300 µs, duty cycle ≤2%) to ensure consistent V_CE(sat) and h_FE measurement integrity.

Key Specifications

Pinout & Package

2SC4617T1G is housed in the SC−75 (SOT-416) plastic surface-mount package (1.60 × 0.80 × 0.80 mm, 1.00 mm pitch), optimized for automated placement and minimal PCB real estate.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN general-purpose amplifier applications.

Compared with MMBT4401LT1G and BC846BPDW1T1G, the 2SC4617T1G offers tighter h_FE consistency (120–560) and lower V_CE(sat) for precision low-power amplification, while requiring dedicated single-transistor layout and delivering superior gain stability below 100 mA.

Availability

2SC4617T1G is available at Aetrix Electronics and suitable for audio pre-amplifiers, low-power sensor interfaces, automotive LED drivers, and logic-level signal switching requiring stable component supply and long-term manufacturability.

Supply support for 2SC4617T1G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

onsemi (formerly ON Semiconductor) is a global semiconductor supplier focused on energy-efficient electronics, delivering power management, analog, sensing, and connectivity solutions.

The 2SC4617T1G belongs to onsemi's general-purpose bipolar transistor product line, engineered for cost-sensitive, space-constrained linear and switching applications across consumer, industrial, and automotive markets.

FAQ

What is the maximum collector-emitter voltage rating for the 2SC4617T1G?

The 2SC4617T1G has a maximum collector-emitter breakdown voltage V_(BR)CEO of 50 Vdc at I_C = 1.0 mA and T_A = 25°C. This rating defines the absolute upper limit for voltage applied between collector and emitter before device breakdown occurs. Operating above this value risks permanent damage. Designers should maintain at least 20% derating margin in production circuits to ensure long-term reliability under temperature and tolerance variations.

Does the 2SC4617T1G support automotive applications?

Yes, the 2SC4617T1G is AEC−Q101 qualified and PPAP capable, confirming its suitability for automotive applications including interior lighting control, sensor signal conditioning, and body electronics. Its guaranteed operation from −55°C to +150°C junction temperature, Pb-free construction, and validated reliability testing meet automotive quality system requirements. The "S" prefix variant (e.g., S2SC4617G) provides additional site-specific control for automotive-tier suppliers.

What is the typical transition frequency (f_T) of the 2SC4617T1G and how is it measured?

The 2SC4617T1G has a typical transition frequency f_T of 180 MHz, measured under standardized conditions: V_CE = 12 Vdc, I_C = 2.0 mAdc, and test frequency = 30 MHz. This parameter indicates the frequency at which current gain drops to unity and reflects usable bandwidth for small-signal amplification. It is not a guaranteed minimum but a typical value-designers must verify gain margin at target frequencies using actual circuit conditions and layout parasitics.

How does the SC−75 package of the 2SC4617T1G affect thermal performance?

The SC−75 (SOT-416) package of the 2SC4617T1G delivers 125 mW power dissipation on FR-4 PCB with minimum recommended footprint. Its small size (1.60 × 0.80 × 0.80 mm) limits thermal mass and heatsinking area, making it sensitive to ambient temperature and adjacent heat sources. For reliable operation near P_D max, designers should minimize copper isolation around the pad, avoid enclosing the device in sealed enclosures, and consider derating by 1.2 mW/°C above 25°C ambient per the datasheet thermal characteristic curve.

Is the 2SC4617T1G pin-compatible with other SC−75 transistors like the MMBT2222ALT1G?

No, the 2SC4617T1G is not pin-compatible with MMBT2222ALT1G despite sharing the SC−75 package. The 2SC4617T1G uses Style 1 pinout (Pin 1 = Base, Pin 2 = Emitter, Pin 3 = Collector), whereas MMBT2222ALT1G follows Style 2 (Pin 1 = Emitter, Pin 2 = Base, Pin 3 = Collector). Swapping them without layout revision will cause functional failure. Always verify pin mapping against the specific device marking diagram and mechanical drawing before substitution.