onsemi 2SC4694-TL-E

Overview

2SC4694-TL-E from onsemi is an NPN epitaxial planar silicon transistor designed for low-frequency general-purpose amplification and muting functions in audio signal paths. It delivers high DC current gain (hFE = 200–300 at IC = 10 mA), high reverse hFE (150 typ), VEBO ≥ 25 V, and low ON resistance (Ron = 1 Ω at IB = 5 mA) in an ultrasmall MCP package. It is used in compact audio mute switches and preamplifier stages where space-constrained reliability is critical.

For engineers reviewing the 2SC4694-TL-E datasheet, pinout, applications, or equivalent options, key selection criteria include its guaranteed VEBO ≥ 25 V, saturation voltage performance (VCE(sat) ≤ 0.5 V at IC/IB = 50), fT = 250 MHz at IC = 10 mA, thermal derating curve (PC = 150 mW at Ta = 25°C), and MBIT process-based robustness in muting duty cycles.

Technical Context

The 2SC4694-TL-E employs onsemi's MBIT (Mesa Bipolar Integrated Technology) process to achieve high hFE consistency and elevated reverse hFE-critical for bidirectional analog switching in muting circuits. Its high VEBO rating enables safe operation with ±25 V base-emitter reverse bias, supporting rail-to-rail mute control without clamping diodes.

Electrical behavior is characterized at Ta = 25°C with strict test conditions: VCE = 5 V for hFE, VCE = 10 V for fT, and IC/IB = 50 for saturation parameters. Thermal limits are defined by junction temperature (Tj ≤ 150°C) and storage range (−55°C to +150°C), with power dissipation derated linearly above 25°C ambient per the published PC–Ta curve.

Key Specifications

Pinout & Package

2SC4694-TL-E is housed in a 3-pin MCP (Mini Component Package) surface-mount package measuring 2.1 mm × 1.25 mm × 0.425 mm (L × W × H), with gull-wing leads and marking "WT". The package supports reflow soldering and is optimized for high-density PCB layouts.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN general-purpose amplifier applications.

Compared with 2SC4694-TL-E, the 2SC4738-TL-E trades reverse-bias ruggedness for bandwidth, while BC847BW sacrifices VEBO headroom and ON-state resistance for broader availability-making 2SC4694-TL-E uniquely suited for high-reliability, rail-swing-tolerant audio muting.

Availability

2SC4694-TL-E is available at Aetrix Electronics and suitable for audio muting switches, low-noise preamplifiers, and compact DC-coupled signal buffers requiring stable component supply across industrial, medical, and professional audio programs.

Supply support for 2SC4694-TL-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

onsemi (formerly ON Semiconductor) is a global semiconductor supplier focused on energy-efficient innovation for automotive, industrial, cloud, and intelligent edge applications.

The 2SC4694-TL-E belongs to onsemi's legacy analog transistor portfolio, engineered specifically for high-fidelity audio signal conditioning-emphasizing VEBO robustness, low saturation loss, and thermal stability in space-constrained enclosures.

FAQ

What is the maximum allowable reverse base-emitter voltage for 2SC4694-TL-E?

The 2SC4694-TL-E guarantees a minimum VEBO of 25 V, meaning it can safely withstand up to −25 V applied from emitter to base without breakdown. This specification is verified per the Absolute Maximum Ratings table in the official 2SC4694/D datasheet and is critical for muting applications interfacing with ±24 V audio rails. Exceeding this voltage risks permanent degradation of the base-emitter junction in the 2SC4694-TL-E.

Does 2SC4694-TL-E support bidirectional current flow in muting applications?

No-the 2SC4694-TL-E is an NPN transistor and conducts current unidirectionally from collector to emitter when forward-biased. However, its high reverse hFE (150 typ) and high VEBO allow it to tolerate reverse base-emitter bias during signal polarity reversals, making it suitable for AC-coupled or DC-coupled muting where emitter-base voltage may swing negative. This behavior is intrinsic to the 2SC4694-TL-E's MBIT process design.

What is the typical ON resistance of 2SC4694-TL-E and how is it measured?

The 2SC4694-TL-E exhibits a typical ON resistance (Ron) of 1 Ω when driven with IB = 5 mA, as specified in the Features section of the 2SC4694/D datasheet. This value reflects the effective resistance between collector and emitter under saturated switching conditions and directly impacts insertion loss in series-mute topologies. Ron is derived from VCE(sat)/IC measurements at defined IB and IC levels-not a small-signal parameter-and is confirmed across production lots for the 2SC4694-TL-E.

Can 2SC4694-TL-E be used in place of BC847B in audio preamp designs?

The 2SC4694-TL-E offers significantly higher hFE (200–300 vs. 110–220), higher VEBO (25 V vs. 6 V), and lower Ron than BC847B, making it superior for high-performance audio preamps requiring gain stability and rail tolerance. However, BC847B uses SOT-323 while 2SC4694-TL-E uses MCP-so PCB layout changes are required. The 2SC4694-TL-E is not a drop-in replacement, but a functional upgrade where space and specs permit.

What thermal derating applies to 2SC4694-TL-E above 25°C ambient?

The 2SC4694-TL-E has a maximum power dissipation of 150 mW at Ta = 25°C, with linear derating beyond that point. Per the PC–Ta curve in the datasheet, dissipation decreases by approximately 1.2 mW/°C above 25°C, reaching zero at Ta ≈ 150°C. This derating must be applied in enclosed audio modules or stacked PCBs where heatsinking is limited-ensuring the 2SC4694-TL-E remains within its 150°C junction limit under worst-case ambient and self-heating conditions.