onsemi 2SC4853-4-TL-E

Overview

2SC4853-4-TL-E from onsemi is an NPN RF transistor in MCP (SC-70/SOT-323) package, rated for V_CEO = 6 V, I_C = 15 mA, f_T = 5 GHz (typ), with NF = 2.6 dB (1 GHz, V_CE = 1 V, I_C = 1 mA) and |S_21e|² = 7 dB (1 GHz). It serves as a low-voltage, low-current RF amplifier in UHF front-end stages of portable wireless receivers.

For engineers reviewing the 2SC4853-4-TL-E datasheet, pinout, applications, or equivalent options, key selection criteria include noise figure at 1 GHz, gain-bandwidth product, output capacitance (C_ob = 0.6–1.0 pF), DC current gain ranking (Rank 4: h_FE = 90–180), and SC-70 thermal/power derating behavior.

Technical Context

The 2SC4853-4-TL-E is a silicon NPN epitaxial planar transistor optimized for small-signal amplification up to 2 GHz. Its f_T = 5 GHz enables stable gain in UHF bands, while low C_ob (0.6–1.0 pF) and high |S_21e|² (7 dB @ 1 GHz, 10.5 dB @ 2 V/3 mA) support broadband matching in 50 Ω systems.

It operates under low-voltage bias (V_CE = 1–2 V) and low-current conditions (I_C = 1–3 mA), delivering NF as low as 1.9 dB at V_CE = 2 V / I_C = 3 mA. The Rank 4 h_FE bin (90–180) ensures consistent DC bias stability across production lots.

Key Specifications

Pinout & Package

Package: MCP (JEITA SC-70 / JEDEC SOT-323), 3-pin surface-mount, 0.006 g mass, 2.1 mm × 1.25 mm footprint, 0.65 mm pin pitch.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar RF transistor applications.

Compared with MCH4015-TL-E and 2SC5004-TL-E, the 2SC4853-4-TL-E delivers optimal balance of noise (2.6 dB), gain (7 dB), and low-voltage operation (6 V V_CEO) for UHF consumer wireless, making it ideal where moderate performance and proven reliability outweigh extreme specs.

Availability

2SC4853-4-TL-E is available at Aetrix Electronics and suitable for UHF wireless microphones, ISM band sensor receivers, and portable broadcast tuners requiring stable component supply, Pb-free compliance, and reel-based SMT assembly.

Supply support for 2SC4853-4-TL-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

onsemi (formerly ON Semiconductor) is a global semiconductor supplier specializing in energy-efficient electronics for automotive, industrial, cloud, and IoT applications.

The 2SC4853-4-TL-E belongs to onsemi's RF bipolar transistor family designed specifically for low-noise, low-power UHF amplification in portable and battery-operated wireless equipment.

FAQ

What is the maximum operating frequency supported by the 2SC4853-4-TL-E?

The 2SC4853-4-TL-E has a gain-bandwidth product (f_T) of 5 GHz (typical), meaning it retains usable current gain up to approximately 2 GHz in practical common-emitter amplifier configurations. Measured S-parameter data confirms stable |S_21e|² > 1.5 dB up to 2 GHz under standard bias conditions (V_CE = 1 V, I_C = 1 mA), making the 2SC4853-4-TL-E well-suited for UHF applications including 433 MHz, 868 MHz, and 915 MHz bands.

Is the 2SC4853-4-TL-E RoHS and Pb-free compliant?

Yes, the 2SC4853-4-TL-E is explicitly marked "Pb Free" in its ordering information and conforms to RoHS Directive 2011/65/EU. The "-E" suffix in the part number denotes lead-free termination, and the device uses matte tin plating on its SC-70 terminals. Full compliance documentation, including test reports and material declarations, is available through onsemi's official product page for 2SC4853-4-TL-E.

How does the h_FE Rank 4 specification affect circuit design for the 2SC4853-4-TL-E?

The 2SC4853-4-TL-E is binned to Rank 4, guaranteeing h_FE = 90–180 at V_CE = 1 V and I_C = 1 mA. This tight DC current gain range reduces variation in base bias current requirements, allowing fixed-resistor bias networks without per-unit trimming. Designers can rely on this spec to achieve consistent quiescent point stability across production batches of 2SC4853-4-TL-E, simplifying qualification for consumer-grade RF modules.

Can the 2SC4853-4-TL-E be used in common-base configuration?

Yes, the 2SC4853-4-TL-E supports common-base operation, as confirmed by its absolute maximum ratings (VCBO = 12 V, VEBO = 1.5 V) and S-parameter datasets published for common-emitter mode - which imply usable forward and reverse transmission characteristics. However, no dedicated common-base S-parameters or application notes are provided for 2SC4853-4-TL-E; designers must validate stability, input/output impedance, and gain empirically using the existing CE data as a starting point.

What is the thermal resistance (R_θJA) of the 2SC4853-4-TL-E in standard FR-4 layout?

While the official datasheet for 2SC4853-4-TL-E does not publish R_θJA, typical SC-70 packaged RF transistors like the 2SC4853-4-TL-E exhibit R_θJA ≈ 300–400°C/W on 1-inch² FR-4 with minimal copper. Derating curves show allowable collector dissipation drops from 90 mW at 25°C ambient to ~45 mW at 85°C ambient. For reliable operation, PCB layout must include thermal vias and ≥10 mm² of 1-oz copper connected to the emitter pad, as validated in onsemi's land pattern example for 2SC4853-4-TL-E.