Toshiba Semiconductor and Storage 2SC5198-O(S1,E

Overview

2SC5198-O(S1) from Toshiba is a silicon NPN power transistor designed for high-fidelity audio amplifier output stages, featuring V_CEO = 140 V (min), I_C = 10 A, P_C = 100 W at T_c = 25°C, h_FE = 80–160 (O-grade), and f_T = 30 MHz - enabling robust 70-W linear amplification in Class AB push-pull configurations.

For engineers reviewing the 2SC5198-O(S1) datasheet, 2SC5198-O(S1) pinout, 2SC5198-O(S1) application, or 2SC5198-O(S1) equivalent, key selection factors include safe operating area (SOA) derating at elevated case temperatures, complementary pairing with 2SA1941, V_CE(sat) ≤ 2.0 V at I_C = 7 A / I_B = 0.7 A, and RoHS-compliant packaging per JEITA 2-16C1A.

Technical Context

This triple-diffused NPN transistor operates in common-emitter configuration with DC current gain h_FE specified at two bias points: 55–160 at I_C = 1 A and 35–83 at I_C = 5 A, supporting stable gain across wide output current swing. Its 170 pF collector output capacitance (C_ob) and 30 MHz transition frequency (f_T) support mid-to-high audio bandwidth fidelity without instability in feedback-coupled stages.

The device's SOA curve is explicitly defined for pulsed (1 ms to 100 ms) and DC operation up to T_c = 100°C, with linear derating above 25°C. It is rated for V_CB0 = 140 V and V_EBO = 5 V, confirming suitability for high-voltage rail designs with moderate base drive requirements.

Key Specifications

Pinout & Package

Package: TO-3P (JEITA 2-16C1A, 4.7 g typ.), metal-can isolated collector, intended for bolt-down heatsinking with electrically isolated mounting.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN power transistor applications.

Compared with 2SC5198-O(S1), 2SC5200 offers higher power headroom and extended SOA for demanding audio upgrades, while MJE15030G provides industrial-grade qualification at lower voltage/current ratings - neither is pin-compatible, and both require PCB and thermal redesign.

Availability

2SC5198-O(S1) is available at Aetrix Electronics and suitable for high-fidelity audio amplifiers, professional PA systems, and studio monitor power stages requiring stable component supply and long-lifecycle availability.

Supply support for 2SC5198-O(S1) includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Toshiba Electronic Devices & Storage Corporation is a Japanese semiconductor manufacturer specializing in power devices, analog ICs, and discrete components for industrial and consumer applications.

The 2SC5198-O(S1) belongs to Toshiba's legacy high-power audio transistor family, engineered specifically for linear amplifier output stages requiring ruggedness, high-voltage capability, and matched complementary pairing.

FAQ

What is the h_FE range for 2SC5198-O(S1) and how is it binned?

The 2SC5198-O(S1) has an h_FE range of 80–160 at V_CE = 5 V and I_C = 1 A, designated by the "O" suffix per Toshiba's grading system. This binning enables tighter matching with its complementary PNP counterpart 2SA1941-O for low-distortion push-pull amplifier designs. The 2SC5198-O(S1) datasheet confirms this range under Note 2 in the Electrical Characteristics table.

Is 2SC5198-O(S1) RoHS compliant?

Yes, 2SC5198-O(S1) is RoHS compatible as indicated by the [[G]]/RoHS marking on the device body and confirmed in Toshiba's 2013-11-01 datasheet revision. Compliance aligns with EU Directive 2011/65/EU; however, specific Pb-free status should be verified via Toshiba's latest material declaration for the exact lot, as RoHS-compliant versions may coexist with leaded variants in legacy production.

What is the safe operating area (SOA) limitation for 2SC5198-O(S1) at 75°C case temperature?

At T_c = 75°C, the 2SC5198-O(S1) SOA must be linearly derated from its 25°C rating: maximum continuous I_C drops to ~6.5 A at V_CE = 50 V, and pulsed limits (e.g., 10-ms) scale proportionally. The datasheet's SOA graph (Sheet 3) shows explicit derating lines - exceeding these boundaries risks secondary breakdown. Thermal design for 2SC5198-O(S1) must maintain T_c ≤ 75°C under worst-case load.

Can 2SC5198-O(S1) be used as a direct replacement for 2SC5198-R(S1)?

No - 2SC5198-O(S1) and 2SC5198-R(S1) differ in h_FE grading: O-grade is 80–160, while R-grade is 55–110. Substituting them without circuit re-biasing may cause quiescent current drift, thermal runaway, or increased distortion. The 2SC5198-O(S1) datasheet specifies separate test conditions and binning criteria; mixing grades invalidates guaranteed performance in matched-pair amplifier topologies.

What is the recommended heatsink interface for 2SC5198-O(S1) in TO-3P package?

For 2SC5198-O(S1) in JEITA 2-16C1A TO-3P package, Toshiba recommends electrically isolating the collector (metal case) from the heatsink using mica or ceramic washers with thermal grease, unless the circuit topology grounds the collector. Mounting torque must not exceed 0.98 N·m (10 kgf·cm) to avoid package deformation. The 2SC5198-O(S1) thermal resistance R_θJC is 0.5°C/W, so heatsink selection must achieve R_θSA ≤ 1.0°C/W for T_c ≤ 75°C at 50-W dissipation.