Toshiba Semiconductor and Storage 2SC5200N(S1,E,S)

Overview

2SC5200N(S1,E,S) from Toshiba is a silicon NPN bipolar power transistor in TO-3P(N) package, rated for V_CEO = 230 V (min), I_C = 15 A (DC), P_C = 150 W, and optimized for high-fidelity audio amplifier output stages up to 100 W. It features h_FE ≥ 80 at I_C = 1 A and ≥ 35 at I_C = 7 A.

For engineers reviewing the 2SC5200N(S1,E,S) datasheet, 2SC5200N(S1,E,S) pinout, 2SC5200N(S1,E,S) application, or 2SC5200N(S1,E,S) equivalent, key selection criteria include safe operating area (SOA) compliance in linear Class AB operation, thermal resistance R_th(j-c) = 0.83 °C/W, and complementary pairing with 2SA1943N for push-pull amplifier designs.

Technical Context

This discrete NPN transistor uses triple-diffused silicon construction to support high-voltage, high-current linear amplification. Its static characteristics are specified at T_c = 25 °C, with guaranteed V_(BR)CEO ≥ 230 V and V_CE(sat) ≤ 3.0 V at I_C = 8 A / I_B = 0.8 A.

Dynamic performance includes f_T = 30 MHz (typ.) and C_ob = 200 pF (typ.) at V_CB = 10 V, enabling stable operation in audio frequency ranges up to 20 kHz with low distortion when biased in Class AB. Junction temperature must not exceed 150 °C per absolute maximum rating.

Key Specifications

Pinout & Package

Package: TO-3P(N), also designated 2-16C1S by Toshiba; metal case serves as collector terminal and thermal path to heatsink; weight 4.6 g (typ.).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN power transistor applications.

Compared with 2SC5200 and MJE15030G, the 2SC5200N(S1,E,S) offers verified 230-V breakdown, RoHS-compliant marking, and guaranteed SOA for 100-W audio output-making it the preferred choice for new high-fidelity amplifier designs requiring regulatory compliance and thermal robustness.

Availability

2SC5200N(S1,E,S) is available at Aetrix Electronics and suitable for high-fidelity audio amplifiers, discrete power output stages, and industrial audio signal generators requiring stable component supply and long-term manufacturability.

Supply support for 2SC5200N(S1,E,S) includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Toshiba Electronic Devices & Storage Corporation designs and manufactures discrete semiconductors, power devices, and logic ICs with emphasis on reliability, thermal performance, and application-specific optimization.

The 2SC5200N(S1,E,S) belongs to Toshiba's legacy high-power audio transistor family, engineered specifically for linear Class AB output stages in consumer and professional audio equipment demanding high voltage, high current, and rugged SOA behavior.

FAQ

What is the maximum continuous collector current rating for 2SC5200N(S1,E,S)?

The 2SC5200N(S1,E,S) has an absolute maximum DC collector current rating of 15 A at T_c = 25 °C. In practical amplifier designs, sustained current must be limited by thermal design to ensure junction temperature remains ≤150 °C, typically restricting continuous I_C to ~8–10 A with appropriate heatsinking. The 2SC5200N(S1,E,S) datasheet specifies V_CE(sat) ≤ 3.0 V at I_C = 8 A / I_B = 0.8 A, confirming operational capability in this range.

Is 2SC5200N(S1,E,S) RoHS compliant?

Yes, the 2SC5200N(S1,E,S) is RoHS compliant, as confirmed by Toshiba's marking notation "[[G]]/RoHS COMPATIBLE" or "[[G]]/RoHS [[Pb]]" on the device body. This designation aligns with Directive 2011/65/EU and applies to all units manufactured under Rev. 2.0 (2015-05-12) and later. The 2SC5200N(S1,E,S) contains lead-free solderability and restricted substances within EU limits.

How does 2SC5200N(S1,E,S) differ from the original 2SC5200?

The 2SC5200N(S1,E,S) is the RoHS-compliant, updated version of the 2SC5200, sharing identical electrical specifications, thermal characteristics, and package dimensions. Differences are limited to marking format (e.g., inclusion of RoHS identifier), manufacturing process refinements for environmental compliance, and traceability enhancements. The 2SC5200N(S1,E,S) replaces the legacy 2SC5200 in new designs requiring documented RoHS conformance.

Can 2SC5200N(S1,E,S) be used in parallel configurations?

Yes, the 2SC5200N(S1,E,S) supports parallel operation when properly implemented with individual emitter resistors (typically 0.1–0.22 Ω) to ensure current sharing. Its consistent h_FE spread (80–160) and matched SOA allow stable paralleling in high-power amplifier outputs. Thermal coupling between devices is critical-mounting on a common heatsink with uniform pressure and thermal interface material is required to prevent thermal runaway in the 2SC5200N(S1,E,S) array.

What is the safe operating area (SOA) limit for 2SC5200N(S1,E,S) at 100 °C case temperature?

Per Toshiba's guaranteed SOA curve (Fig. 8.6), the 2SC5200N(S1,E,S) supports 8 A at V_CE = 30 V and 4 A at V_CE = 60 V under DC conditions at T_c = 100 °C. Derating is required above 25 °C case temperature: the SOA boundary contracts linearly with rising T_c, reflecting reduced thermal headroom. For reliable 100-W continuous operation, the 2SC5200N(S1,E,S) must be paired with a heatsink achieving ≤ 0.5 °C/W total thermal resistance to ambient.