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Home > Products > Discrete Semiconductor Products > Transistors > Bipolar (BJT) > Single Bipolar Transistors

onsemi 2SC5245-4-TL-E

Name: 2SC5245-4-TL-E
Brand: onsemi
SKU: 2SC5245-4-TL-E
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: 2SC5245-4-TL-E

Manufacturer:: onsemi

Category:: Single Bipolar Transistors

Package:: -

Datasheet:: 2SC5245-4-TL-E.pdf

Description:: BIP NPN 30MA 10V FT=8G

Quantity:: RFQ Add To RFQ list

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Inventory:12,000

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Product details

Overview

2SC5245-4-TL-E from onsemi is an NPN RF transistor in MCP (SC-70/SOT-323) package, rated for V_CEO = 10 V, I_C = 30 mA, f_T = 8 GHz typ, with NF = 0.9 dB typ at 1 GHz and |S21e|² = 10 dB typ at 1.5 GHz - optimized for low-noise amplification in UHF wireless front-ends.

For engineers reviewing the 2SC5245-4-TL-E datasheet, pinout, applications, or equivalent options, key selection criteria include noise figure vs. frequency, gain-bandwidth trade-offs at low bias (V_CE = 1 V, I_C = 1 mA), S-parameter stability across 200–2000 MHz, and SC-70 thermal and layout constraints.

Technical Context

This device operates in common-emitter configuration with Z₀ = 50 Ω reference. Its S-parameters are characterized at multiple bias points (V_CE = 1/2/5 V, I_C = 1/3/5/10 mA), showing monotonic degradation of |S21| and increasing input mismatch (∠S11) above 1 GHz under low-current bias.

The transistor exhibits strong current-dependent f_T: 3.5 GHz typ at V_CE = 1 V, I_C = 1 mA versus 8 GHz typ at V_CE = 5 V, I_C = 10 mA - indicating design sensitivity to quiescent point selection for broadband RF gain targeting.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CEO	10 V - maximum safe collector-emitter voltage under operating conditions; defines upper limit for supply rail in LNA stages.
f_T	8 GHz typ (V_CE = 5 V, I_C = 10 mA) - usable gain bandwidth for narrowband amplifiers up to ~2–3 GHz with margin.
NF	0.9 dB typ at f = 1 GHz, V_CE = 2 V, I_C = 3 mA - enables high-sensitivity receiver front-ends in ISM-band transceivers.
\|S21e\|²	10 dB typ at 1.5 GHz, V_CE = 5 V, I_C = 10 mA - delivers >3× power gain with stable phase response per S-parameter tables.
C_ob	0.45–0.7 pF at V_CB = 10 V, f = 1 MHz - low output capacitance supports wideband matching without excessive neutralization.
h_FE	90–180 (Rank 4) - DC current gain binning ensures predictable bias network design for reproducible RF performance.
P_C	150 mW - limits continuous RF output power; requires thermal-aware PCB land pattern per outline drawing.

Pinout & Package

Package: MCP (JEITA SC-70 / JEDEC SOT-323), 3-pin surface-mount, mass = 0.006 g, footprint compatible with standard SOT-323 reflow profiles.

Pin/Terminal	Circuit Role	Design Meaning
1	Base	Control electrode; requires stable DC bias network (e.g., resistive divider) and RF choke or capacitor coupling depending on topology.
2	Emitter	Common reference node; must be low-inductance grounded via multiple vias to minimize emitter degeneration at RF frequencies.
3	Collector	RF output node; connects to matching network and load; sensitive to parasitic inductance due to f_T > 5 GHz.

Key Features

Feature	Design Value
Low-noise operation	NF = 0.9 dB typ at 1 GHz enables sub-2 dB system noise figure in single-stage LNAs for GPS/Wi-Fi receivers.
High f_T at low bias	f_T = 3.5 GHz typ at V_CE = 1 V, I_C = 1 mA supports battery-powered ultra-low-power RF amplification.
Stable S-parameters	Full 200–2000 MHz S-matrix provided for three bias points - eliminates need for on-wafer characterization in prototyping.
SC-70 packaging	Small footprint (2.1 × 1.25 mm) and thermal resistance suitable for space-constrained IoT sensor nodes and wearables.
Pb-free TL reel	RoHS-compliant tape-and-reel (3000 pcs/reel) with E marking - supports automated SMT assembly without lead-free process deviation.

Applications

GPS LNA Module	ISM-Band Transceiver Front-End
Use Scenario: Low-noise amplification of 1.575 GHz GPS L1 signals in handheld navigation devices. IC Role / Device Role / Timing Role: First-stage common-emitter LNA with 50 Ω input matching and cascode-staged output. Use Value: 0.9 dB NF at 1 GHz and 10 dB \|S21e\|² at 1.5 GHz enable >28 dB system sensitivity without external cooling or complex biasing.	Use Scenario: Receive-path amplification in 2.4 GHz Wi-Fi/BLE SoC companion radios. IC Role / Device Role / Timing Role: Standalone RF gain block between antenna switch and downconversion mixer. Use Value: Verified S-parameters at 2.0 GHz (\|S21\| = 2.65, ∠S21 = 61.3°) ensure predictable small-signal gain and group delay in 802.11b/g/n designs.
UWB Pulse Amplifier	FM Radio Tuner IF Stage
Use Scenario: Low-distortion amplification of 3.1–10.6 GHz UWB pulses in radar proximity sensors. IC Role / Device Role / Timing Role: Single-transistor broadband amplifier with resistive feedback for pulse fidelity. Use Value: f_T = 8 GHz and C_ob < 0.7 pF support flat gain response across FCC-defined UWB band without peaking compensation.	Use Scenario: Intermediate-frequency amplification at 10.7 MHz in automotive FM radio modules. IC Role / Device Role / Timing Role: High-linearity Class-A amplifier with fixed emitter degeneration. Use Value: h_FE binning (Rank 4: 90–180) ensures consistent DC bias and gain stability over temperature in analog IF chains.

GPS LNA Module

ISM-Band Transceiver Front-End

Use Scenario: Low-noise amplification of 1.575 GHz GPS L1 signals in handheld navigation devices.

IC Role / Device Role / Timing Role: First-stage common-emitter LNA with 50 Ω input matching and cascode-staged output.

Use Value: 0.9 dB NF at 1 GHz and 10 dB |S21e|² at 1.5 GHz enable >28 dB system sensitivity without external cooling or complex biasing.

Use Scenario: Receive-path amplification in 2.4 GHz Wi-Fi/BLE SoC companion radios.

IC Role / Device Role / Timing Role: Standalone RF gain block between antenna switch and downconversion mixer.

Use Value: Verified S-parameters at 2.0 GHz (|S21| = 2.65, ∠S21 = 61.3°) ensure predictable small-signal gain and group delay in 802.11b/g/n designs.

UWB Pulse Amplifier

FM Radio Tuner IF Stage

Use Scenario: Low-distortion amplification of 3.1–10.6 GHz UWB pulses in radar proximity sensors.

IC Role / Device Role / Timing Role: Single-transistor broadband amplifier with resistive feedback for pulse fidelity.

Use Value: f_T = 8 GHz and C_ob < 0.7 pF support flat gain response across FCC-defined UWB band without peaking compensation.

Use Scenario: Intermediate-frequency amplification at 10.7 MHz in automotive FM radio modules.

IC Role / Device Role / Timing Role: High-linearity Class-A amplifier with fixed emitter degeneration.

Use Value: h_FE binning (Rank 4: 90–180) ensures consistent DC bias and gain stability over temperature in analog IF chains.

Equivalent & Alternatives

The following parts are listed as comparable options for similar RF transistor applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
NE85633	f_T = 7 GHz, NF = 1.2 dB @ 1 GHz, same SC-70 package but higher V_CEO = 12 V	Better voltage headroom for 12 V supply rails; slightly higher noise floor limits ultra-low-NF use cases	Select NE85633 when operating above 10 V or requiring wider V_CEO margin; verify S22 stability at target frequency.
MMD9300	f_T = 9 GHz, NF = 1.1 dB @ 1 GHz, SOT-23 package (larger footprint, different pinout)	Higher gain-bandwidth but incompatible pin mapping and thermal profile; requires PCB redesign	Choose MMD9300 only if f_T > 8 GHz is mandatory and layout revision is acceptable; not a drop-in replacement.

Compared with NE85633 and MMD9300, the 2SC5245-4-TL-E offers the lowest noise figure (0.9 dB) in its class while maintaining strict SC-70 compatibility and proven 1.5–2.0 GHz S-parameter behavior - making it optimal for cost-sensitive, space-constrained GPS and ISM-band LNAs where NF dominates system budget.

Availability

2SC5245-4-TL-E is available at Aetrix Electronics and suitable for GPS receivers, Wi-Fi/BLE front-ends, and UWB sensor modules requiring stable component supply, RoHS compliance, and SC-70 footprint consistency.

Supply support for 2SC5245-4-TL-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

onsemi (formerly ON Semiconductor) is a global semiconductor supplier specializing in energy-efficient silicon solutions for automotive, industrial, cloud, and IoT applications.

The 2SC5245-4-TL-E belongs to onsemi's RF bipolar transistor product line, engineered specifically for high-frequency, low-noise amplification in portable wireless systems operating below 3 GHz.

FAQ

What is the h_FE range for 2SC5245-4-TL-E?

The 2SC5245-4-TL-E is binned as Rank 4, with DC current gain h_FE = 90–180 measured at V_CE = 5 V and I_C = 10 mA. This tight binning ensures predictable bias point stability across production lots, critical for repeatable RF gain and noise performance in volume-manufactured LNAs.

Does 2SC5245-4-TL-E support 5 V supply operation?

Yes, the 2SC5245-4-TL-E is fully specified for V_CE = 5 V operation, including f_T = 8 GHz typ, |S21e|² = 10 dB typ at 1.5 GHz, and NF = 1.4 dB typ at 1.5 GHz. Its absolute maximum V_CEO rating is 10 V, providing 100% margin for 5 V rail use with transient headroom.

What is the thermal resistance of 2SC5245-4-TL-E?

While not explicitly stated as R_θJA in the datasheet, the 2SC5245-4-TL-E's 150 mW power dissipation rating and 0.006 g mass imply a typical R_θJA ≈ 250°C/W on standard FR-4 with minimal copper pour. For reliable operation above 50 mW, use the recommended land pattern (2.1 × 1.25 mm pad, multiple thermal vias) per page A1074-7/8.

Can 2SC5245-4-TL-E replace 2SC5245A-3-TL-E?

No - the 2SC5245-4-TL-E and 2SC5245A-3-TL-E differ in h_FE binning: Rank 4 (90–180) vs. Rank 3 (60–120). Substituting them may shift DC bias points and degrade RF gain/noise performance unless the circuit is re-biased. They share identical package, pinout, and AC specs, but are not functionally interchangeable without validation.

Is 2SC5245-4-TL-E suitable for 2.4 GHz Wi-Fi applications?

Yes - S-parameter data confirms |S21| = 2.754 (≈ 8.8 dB gain) and stable ∠S21 = 58.9° at 2.0 GHz under V_CE = 5 V, I_C = 10 mA. Combined with NF = 1.4 dB at 1.5 GHz and scalable performance up to 2.4 GHz, the 2SC5245-4-TL-E is validated for 2.4 GHz ISM-band LNA and driver stages in Wi-Fi 4/5 front-ends.

2SC5245-4-TL-E Specifications

Product attributes: Attribute value

Manufacturer:: onsemi

Series:: -

Package/Case:: -

Packaging:: Bulk

Product Status:: Active

Transistor Type:: -

Current - Collector (Ic) (Max):: -

Voltage - Collector Emitter Breakdown (Max):: -

Vce Saturation (Max) @ Ib, Ic:: -

Current - Collector Cutoff (Max):: -

DC Current Gain (hFE) (Min) @ Ic, Vce:: -

Power - Max:: -

Frequency - Transition:: -

Operating Temperature:: -

Grade:: -

Qualification:: -

Mounting Type:: -

Supplier Device Package:: -

2SC5245-4-TL-E FAQ

1.How can I place an order for 2SC5245-4-TL-E through Aetrix?

Please submit a Request for Quotation (RFQ) for 2SC5245-4-TL-E on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 2SC5245-4-TL-E reliable?

The price and inventory of 2SC5245-4-TL-E are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 2SC5245-4-TL-E is usually 5 days.

3.What payment methods are accepted for 2SC5245-4-TL-E?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 2SC5245-4-TL-E transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for 2SC5245-4-TL-E?

2SC5245-4-TL-E orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 2SC5245-4-TL-E order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 2SC5245-4-TL-E?

For technical support, including 2SC5245-4-TL-E datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 2SC5245-4-TL-E requirements.

6.How does Aetrix verify that 2SC5245-4-TL-E is sourced from the original manufacturer or authorized distributors?

All 2SC5245-4-TL-E products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 2SC5245-4-TL-E meets industry standards.

7.What is the process for return or replacement of 2SC5245-4-TL-E?

All 2SC5245-4-TL-E units undergo pre-shipment inspection (PSI). If there is an issue with 2SC5245-4-TL-E, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 2SC5245-4-TL-E part is unused and in its original packaging.

Return procedure for 2SC5245-4-TL-E:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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