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Home > Products > Discrete Semiconductor Products > Transistors > Bipolar (BJT) > Single Bipolar Transistors

onsemi 2SC5277D2-TL-E

Name: 2SC5277D2-TL-E
Brand: onsemi
SKU: 2SC5277D2-TL-E
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: 2SC5277D2-TL-E

Manufacturer:: onsemi

Category:: Single Bipolar Transistors

Package:: -

Datasheet:: 2SC5277D2-TL-E.pdf

Description:: BIP NPN 30MA 10V FT=8G

Quantity:: RFQ Add To RFQ list

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Product details

Overview

2SC5277D2-TL-E from onsemi is an NPN RF transistor in SMCP (SC-75/SOT-416) package, rated for V_CEO = 10 V, I_C = 30 mA, and f_T = 8 GHz typ at V_CE = 5 V, I_C = 10 mA. It delivers low-noise amplification (NF = 0.9 dB typ at 1 GHz) and high gain (|S21|² = 10 dB typ at 1.5 GHz), optimized for UHF front-end LNA stages in portable wireless receivers.

For engineers reviewing the 2SC5277D2-TL-E datasheet, pinout, applications, or equivalent options, key selection criteria include noise figure vs. bias current trade-offs, S-parameter stability across 0.2–2 GHz, ultrasmall footprint constraints, and h_FE binning compatibility with automatic gain control loops.

Technical Context

This device employs a planar epitaxial NPN structure optimized for high-frequency small-signal amplification. Its f_T of 8 GHz and |S21|² of 10 dB at 1.5 GHz confirm suitability for narrowband UHF amplification where impedance matching and noise minimization are critical.

Operation is validated across multiple bias points: V_CE = 1 V / I_C = 1 mA (f_T = 3.5 GHz, |S21|² = 5.5 dB) enables ultra-low-power receive paths, while V_CE = 5 V / I_C = 10 mA supports higher-gain, higher-linearity configurations in IF or driver stages.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CEO	10 V - Maximum collector-emitter voltage before breakdown; sets upper limit for supply rail in LNA designs.
f_T	8 GHz typ - Gain-bandwidth product defining usable frequency ceiling for small-signal amplification.
NF	0.9 dB typ @ 1 GHz - Low noise figure enabling high sensitivity in weak-signal reception (e.g., GPS, ISM band).
\|S21\|²	10 dB typ @ 1.5 GHz - Forward gain magnitude confirming usable power gain in UMTS/Wi-Fi front ends.
C_ob	0.45–0.7 pF - Output capacitance affecting output matching network design and stability margin.
h_FE	60–270 - DC current gain range supporting bias stability across production lots and temperature.
Package	SMCP (SC-75/SOT-416) - 1.6 × 0.8 mm footprint enabling compact RF layout with minimal parasitic inductance.

Pinout & Package

2SC5277D2-TL-E uses the SMCP (SC-75/SOT-416) surface-mount package: 1.6 mm × 0.8 mm × 0.4 mm height, 3-terminal configuration with gull-wing leads. The package supports automated placement and reflow soldering per JEDEC J-STD-020.

Pin/Terminal	Circuit Role	Design Meaning
1	Base	Control terminal for bias current injection; requires stable DC source and RF bypass to ground.
2	Emitter	Common reference node; typically grounded via low-inductance path for RF stability.
3	Collector	Output node; connects to matching network and load; sensitive to parasitic capacitance.

Key Features

Feature	Design Value
Low-noise operation	NF = 0.9 dB typ @ 1 GHz enables high-sensitivity receiver front ends without external LNAs.
High-frequency gain	\|S21\|² = 10 dB typ @ 1.5 GHz supports single-stage amplification in UMTS Band I/II applications.
Low-voltage bias capability	Functional at V_CE = 1 V / I_C = 1 mA - reduces power consumption in battery-powered IoT sensors.
Ultrasmall footprint	SMCP package (1.6 × 0.8 mm) allows dense RF layout and minimizes trace inductance in 50 Ω systems.
h_FE binning	Three h_FE ranks (60–120, 90–180, 135–270) support consistent bias point selection across production batches.

Applications

GPS/GLONASS Front-End LNA	ISM Band 915 MHz Receiver
Use Scenario: Amplifying weak satellite signals (–130 dBm) in handheld navigation devices with tight PCB area constraints. IC Role / Device Role / Timing Role: Low-noise amplifier stage operating at 1.575 GHz with 5 V supply and 10 mA collector current. Use Value: NF = 0.9 dB ensures >2 dB improvement in system noise figure over alternatives, extending acquisition range by ~15%.	Use Scenario: Signal amplification in sub-GHz wireless sensor nodes compliant with FCC Part 15.247. IC Role / Device Role / Timing Role: First-stage LNA in 915 MHz transceiver front end, biased at V_CE = 2 V / I_C = 3 mA. Use Value: \|S21\|² = 8.5 dB and Cob = 0.6 pF enable stable 50 Ω input/output matching with <3° phase error across temperature.
Bluetooth LE 2.4 GHz IF Amplifier	FM Radio Tuner Preamp
Use Scenario: Intermediate-frequency amplification in Bluetooth 5.0 receivers using 2.4 GHz carrier with 2 MHz channel bandwidth. IC Role / Device Role / Timing Role: Fixed-gain IF amplifier stage with V_CE = 5 V / I_C = 10 mA and 50 Ω source/load. Use Value: f_T = 8 GHz provides >3× bandwidth margin, ensuring flat gain response and minimal group delay distortion.	Use Scenario: High-selectivity preamplification in automotive FM radio tuners covering 76–108 MHz band. IC Role / Device Role / Timing Role: Low-noise voltage amplifier biased at V_CE = 1 V / I_C = 1 mA for standby mode efficiency. Use Value: NF = 1.4 dB @ 100 MHz and h_FE ≥ 135 ensure SNR > 65 dB with no additional filtering.

GPS/GLONASS Front-End LNA

ISM Band 915 MHz Receiver

Use Scenario: Amplifying weak satellite signals (–130 dBm) in handheld navigation devices with tight PCB area constraints.

IC Role / Device Role / Timing Role: Low-noise amplifier stage operating at 1.575 GHz with 5 V supply and 10 mA collector current.

Use Value: NF = 0.9 dB ensures >2 dB improvement in system noise figure over alternatives, extending acquisition range by ~15%.

Use Scenario: Signal amplification in sub-GHz wireless sensor nodes compliant with FCC Part 15.247.

IC Role / Device Role / Timing Role: First-stage LNA in 915 MHz transceiver front end, biased at V_CE = 2 V / I_C = 3 mA.

Use Value: |S21|² = 8.5 dB and Cob = 0.6 pF enable stable 50 Ω input/output matching with <3° phase error across temperature.

Bluetooth LE 2.4 GHz IF Amplifier

FM Radio Tuner Preamp

Use Scenario: Intermediate-frequency amplification in Bluetooth 5.0 receivers using 2.4 GHz carrier with 2 MHz channel bandwidth.

IC Role / Device Role / Timing Role: Fixed-gain IF amplifier stage with V_CE = 5 V / I_C = 10 mA and 50 Ω source/load.

Use Value: f_T = 8 GHz provides >3× bandwidth margin, ensuring flat gain response and minimal group delay distortion.

Use Scenario: High-selectivity preamplification in automotive FM radio tuners covering 76–108 MHz band.

IC Role / Device Role / Timing Role: Low-noise voltage amplifier biased at V_CE = 1 V / I_C = 1 mA for standby mode efficiency.

Use Value: NF = 1.4 dB @ 100 MHz and h_FE ≥ 135 ensure SNR > 65 dB with no additional filtering.

Equivalent & Alternatives

The following parts are listed as comparable options for similar RF transistor applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
NE68133	f_T = 7 GHz, NF = 1.2 dB @ 1 GHz, same SC-75 package	Lower gain at 1.5 GHz (\|S21\|² = 8.2 dB) and higher V_CEO = 12 V	Preferred when higher breakdown margin is required but 0.8 dB NF penalty is acceptable.
MMD2515	f_T = 9 GHz, NF = 1.1 dB @ 1 GHz, SOT-23 package (2.9 × 1.3 mm)	Larger footprint increases parasitic inductance; higher I_C rating (50 mA)	Selected for higher-power IF stages where board space permits larger package.

Compared with NE68133 and MMD2515, the 2SC5277D2-TL-E offers the lowest noise figure in its class and smallest footprint-critical for miniaturized GNSS modules-while maintaining sufficient gain and bias flexibility for multi-standard receivers.

Availability

2SC5277D2-TL-E is available at Aetrix Electronics and suitable for GPS front-end LNAs, ISM-band wireless sensors, Bluetooth IF amplifiers, and FM radio tuners requiring stable component supply and consistent h_FE binning.

Supply support for 2SC5277D2-TL-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

onsemi (formerly ON Semiconductor) is a global semiconductor supplier focused on energy-efficient innovation for automotive, industrial, cloud, and IoT applications.

The 2SC5277D2-TL-E belongs to onsemi's RF bipolar transistor family designed specifically for low-noise, high-frequency amplification in portable wireless receivers operating below 2.5 GHz.

FAQ

What is the maximum operating frequency of the 2SC5277D2-TL-E?

The 2SC5277D2-TL-E has a typical gain-bandwidth product (f_T) of 8 GHz at V_CE = 5 V and I_C = 10 mA, making it suitable for amplification up to 2 GHz with stable gain and noise performance. Measured S-parameters confirm usable |S21| > 2.7 dB up to 2 GHz under standard bias conditions, validating its use in UHF and low-band microwave applications.

How does the 2SC5277D2-TL-E achieve low noise performance at 1 GHz?

The 2SC5277D2-TL-E achieves NF = 0.9 dB typ at 1 GHz through optimized epitaxial base doping and minimized emitter-base junction capacitance. This is verified under V_CE = 2 V, I_C = 3 mA bias, where internal base resistance and flicker noise are suppressed-enabling high signal-to-noise ratio in GPS/GLONASS front ends without external noise-matching components.

Is the 2SC5277D2-TL-E pin-compatible with other SC-75 RF transistors?

The 2SC5277D2-TL-E uses standard SC-75 (JEITA SC-75, JEDEC SOT-416) pinout: Pin 1 = Base, Pin 2 = Emitter, Pin 3 = Collector. While mechanical and thermal dimensions match industry-standard SC-75 footprints, electrical characteristics-including h_FE binning, f_T, and NF-are unique to this part. Direct substitution requires validation of bias network and matching topology.

What h_FE rank is specified for the 2SC5277D2-TL-E?

The 2SC5277D2-TL-E is classified into three h_FE ranks per the datasheet: Rank 1 (60–120), Rank 2 (90–180), and Rank 3 (135–270) at V_CE = 5 V and I_C = 10 mA. The "D2" suffix in the full part number indicates Rank 2, ensuring predictable DC bias stability in production designs without manual sorting.

Can the 2SC5277D2-TL-E operate reliably at V_CE = 1 V?

Yes-the 2SC5277D2-TL-E is characterized for low-voltage operation: at V_CE = 1 V and I_C = 1 mA, it delivers f_T = 3.5 GHz typ and |S21|² = 5.5 dB typ at 1.5 GHz. This enables ultra-low-power receive modes in battery-operated IoT devices while maintaining measurable RF gain and noise performance.

2SC5277D2-TL-E Specifications

Product attributes: Attribute value

Manufacturer:: onsemi

Series:: -

Package/Case:: -

Packaging:: Bulk

Product Status:: Active

Transistor Type:: -

Current - Collector (Ic) (Max):: -

Voltage - Collector Emitter Breakdown (Max):: -

Vce Saturation (Max) @ Ib, Ic:: -

Current - Collector Cutoff (Max):: -

DC Current Gain (hFE) (Min) @ Ic, Vce:: -

Power - Max:: -

Frequency - Transition:: -

Operating Temperature:: -

Grade:: -

Qualification:: -

Mounting Type:: -

Supplier Device Package:: -

2SC5277D2-TL-E FAQ

1.How can I place an order for 2SC5277D2-TL-E through Aetrix?

Please submit a Request for Quotation (RFQ) for 2SC5277D2-TL-E on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 2SC5277D2-TL-E reliable?

The price and inventory of 2SC5277D2-TL-E are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 2SC5277D2-TL-E is usually 5 days.

3.What payment methods are accepted for 2SC5277D2-TL-E?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 2SC5277D2-TL-E transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for 2SC5277D2-TL-E?

2SC5277D2-TL-E orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 2SC5277D2-TL-E order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 2SC5277D2-TL-E?

For technical support, including 2SC5277D2-TL-E datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 2SC5277D2-TL-E requirements.

6.How does Aetrix verify that 2SC5277D2-TL-E is sourced from the original manufacturer or authorized distributors?

All 2SC5277D2-TL-E products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 2SC5277D2-TL-E meets industry standards.

7.What is the process for return or replacement of 2SC5277D2-TL-E?

All 2SC5277D2-TL-E units undergo pre-shipment inspection (PSI). If there is an issue with 2SC5277D2-TL-E, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 2SC5277D2-TL-E part is unused and in its original packaging.

Return procedure for 2SC5277D2-TL-E:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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