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onsemi 2SC5347E-TD-E
- Part No.:
- 2SC5347E-TD-E
- Manufacturer:
- onsemi
- Category:
- Single Bipolar Transistors
- Package:
- -
- Datasheet:
-
2SC5347E-TD-E.pdf
- Description:
- BIP NPN 150MA 12V FT=4.7G
- Quantity:
- Payment:
- Shipping:
Inventory:56,000
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Product details
Overview
2SC5347E-TD-E from onsemi is an NPN RF transistor in PCP (SOT-89) package, rated for 12 VCEO, 150 mAC, with fT = 4.7 GHz (typ), 8 dB forward gain |S21|2 at 1 GHz, and 1.8 dB noise figure - designed for medium-output amplification in UHF wireless infrastructure front-ends.
For engineers reviewing the 2SC5347E-TD-E datasheet, pinout, applications, or equivalent options, key selection criteria include VCEO/IC derating at RF frequencies, S-parameter stability under 5 V/50 mA bias, thermal performance on ceramic substrates, and rank-specific hFE (90–180) for gain consistency in cascaded LNA stages.
Technical Context
This device operates in common-emitter configuration with specified S-parameters at 50 Ω, supporting stable small-signal amplification from 100 MHz to 1.2 GHz. Its fT of 4.7 GHz enables usable gain beyond 1 GHz while maintaining low NF (1.8 dB typ) and moderate output capacitance (Cob = 2.0 pF max).
The 2SC5347E-TD-E is rank E variant - hFE = 90–180 at VCE = 5 V, IC = 50 mA - ensuring predictable DC biasing in multi-stage RF amps. Package thermal resistance is optimized for mounting on 900 mm² × 0.8 mm ceramic substrate, enabling 1.3 W dissipation without exceeding Tj = 150 °C.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCEO | 12 V - maximum collector-emitter voltage before breakdown; sets upper limit for supply rail in RF amplifier stages. |
| IC max | 150 mA - peak continuous collector current; defines safe operating area for medium-power RF drive applications. |
| fT | 4.7 GHz (typ) - unity-gain frequency; confirms usable gain margin up to ~1 GHz with stable phase response. |
| |S21|2 | 8 dB (typ) at 1 GHz - small-signal power gain; enables single-transistor LNA design with >6 dB gain margin. |
| NF | 1.8 dB (typ) at 1 GHz - noise figure under standard bias; supports high-SNR reception in sub-2 GHz ISM bands. |
| Cob | 2.0 pF (max) at VCB = 10 V - output capacitance; impacts matching network Q and bandwidth trade-offs in tuned amplifiers. |
| hFE (Rank E) | 90–180 at VCE = 5 V, IC = 50 mA - DC current gain range; ensures consistent bias point across production lots. |
Pinout & Package
2SC5347E-TD-E uses the PCP package - identical to JEITA SC-62 / JEDEC SOT-89 / TO-243 - with standardized 3-pin surface-mount footprint optimized for RF thermal and parasitic control on ceramic substrates.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Base | DC bias and RF input node; requires impedance-matched network (e.g., 50 Ω series/base shunt) for stable S11. |
| 2 | Collector | RF output and power delivery node; connected to VCC via RF choke and matched to 50 Ω load for maximum |S21|. |
| 3 | Emitter | AC ground reference; must be low-inductance connection to ground plane to minimize feedback and maintain NF. |
Key Features
| Feature | Design Value |
|---|---|
| High fT with low NF | 4.7 GHz fT and 1.8 dB NF enable wideband LNA operation up to 1.2 GHz without cascading devices. |
| Rank-specified hFE | Rank E (90–180) guarantees tight DC gain distribution, reducing need for per-unit bias trimming in production. |
| PCP thermal design | 1.3 W dissipation on 900 mm² ceramic substrate allows sustained RF output without active cooling in compact modules. |
| Low Cob and Cre | Cob ≤ 2.0 pF and Cre ≤ 0.9 pF minimize Miller effect and improve stability in broadband amplifier layouts. |
Applications
| UHF Wireless Transceivers | ISM Band Receiver Front-Ends |
|---|---|
|
Use Scenario: Low-noise amplification in 433 MHz and 868 MHz ISM band receivers for smart metering and industrial telemetry. IC Role / Device Role / Timing Role: First-stage LNA in common-emitter configuration, biased at VCE = 5 V, IC = 50 mA. Use Value: 1.8 dB NF and 8 dB |S21|2 directly improve receiver sensitivity by ≥2 dB over comparable transistors with >2.5 dB NF. |
Use Scenario: Medium-gain driver in 900–928 MHz narrowband IoT gateways requiring stable small-signal linearity. IC Role / Device Role / Timing Role: Interstage amplifier between mixer and IF filter, operating at VCE = 5 V, IC = 20 mA. Use Value: Rank E hFE tolerance (90–180) ensures ±10% gain variation across batches, simplifying AGC calibration. |
| Cellular Infrastructure Repeaters | RF Test Equipment Signal Paths |
|
Use Scenario: Upstream/downstream signal conditioning in 800–960 MHz repeater units deployed in rural coverage extension. IC Role / Device Role / Timing Role: Linear gain block in feedback-stabilized amplifier topology, mounted on ceramic substrate for thermal reliability. Use Value: 1.3 W power dissipation rating supports continuous 24/7 operation at ambient temperatures up to +70 °C without derating. |
Use Scenario: Calibration-grade gain element in benchtop RF signal generators and spectrum analyzer preamps. IC Role / Device Role / Timing Role: Fixed-bias RF amplifier stage with documented S-parameters (100–1200 MHz, 100 MHz step). Use Value: Published S11, S21, S12, S22 data at three bias points enables accurate behavioral modeling in ADS/MWO simulations. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar RF transistor applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| MRF581 | Higher P1dB (1.5 W), lower fT (2.5 GHz), TO-243AA package with identical pinout. | Better suited for higher-power driver stages; less optimal for ultra-low-noise LNA due to 2.5 dB NF. | Select MRF581 when output power >300 mW is required and noise figure <2 dB is secondary. |
| NE68133 | Lower VCEO (10 V), same fT (4.5 GHz), SOT-343 package (4-pin, different footprint). | Requires PCB redesign; offers better integration density but no thermal pad for high-power dissipation. | Choose NE68133 only if board space is constrained and thermal load remains ≤0.8 W. |
Compared with MRF581 and NE68133, the 2SC5347E-TD-E delivers the best balance of low-noise performance (1.8 dB NF), high fT (4.7 GHz), and ceramic-mount thermal capability (1.3 W) in a standard SOT-89 footprint - making it optimal for cost-sensitive, thermally demanding UHF LNA designs where gain consistency and simulation-ready S-parameters are critical.
Availability
2SC5347E-TD-E is available at Aetrix Electronics and suitable for UHF wireless transceivers, ISM band receiver front-ends, and cellular infrastructure repeaters requiring stable component supply, consistent rank-E hFE distribution, and traceable Pb-free sourcing.
Supply support for 2SC5347E-TD-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
onsemi (formerly ON Semiconductor) is a global semiconductor supplier specializing in energy-efficient power management, analog, sensor, and RF solutions for automotive, industrial, and communications markets.
The 2SC5347E-TD-E belongs to onsemi's legacy RF bipolar transistor product line, engineered specifically for high-frequency, low-noise amplification in sub-2 GHz wireless infrastructure and test equipment applications.
FAQ
What is the guaranteed hFE range for 2SC5347E-TD-E?
The 2SC5347E-TD-E is the Rank E variant of the 2SC5347A family, with hFE guaranteed between 90 and 180 when measured at VCE = 5 V and IC = 50 mA. This tighter distribution compared to Rank D (60–120) or Rank F (135–270) improves gain predictability in production RF amplifier assemblies without individual bias tuning.
Can 2SC5347E-TD-E operate reliably at 1.2 GHz?
Yes - the 2SC5347E-TD-E provides verified S-parameters up to 1.2 GHz under three bias conditions (VCE = 5 V/20 mA, 5 V/50 mA, and 8 V/70 mA), with |S21| ≥ 2.3 dB and stable phase response. Its 4.7 GHz fT ensures sufficient gain margin, though practical power gain drops to ~2.3 dB at 1.2 GHz per published data.
What is the thermal resistance of 2SC5347E-TD-E on standard PCB?
The 2SC5347E-TD-E is characterized for thermal performance on a 900 mm² × 0.8 mm ceramic substrate, achieving 1.3 W power dissipation at Tj = 150 °C. On standard FR-4 PCBs without thermal vias or copper pour, derating is required - typical RθJA exceeds 200 °C/W, limiting safe continuous IC to <50 mA at +25 °C ambient.
Is 2SC5347E-TD-E RoHS and Pb-free compliant?
Yes - the "-E" suffix in 2SC5347E-TD-E explicitly denotes Pb-free packaging, confirmed in the ordering information section of the official datasheet (ENA1087A). The device meets RoHS Directive 2011/65/EU and is marked "Pb Free" on the reel packaging label and device top marking.
How does the PCP package differ from standard SOT-89 in layout?
The PCP package used by 2SC5347E-TD-E conforms to JEITA SC-62 and JEDEC SOT-89 mechanical outlines but features a thicker copper leadframe and optimized thermal pad geometry for ceramic substrate mounting. Land pattern dimensions match standard SOT-89 footprints (3.0 × 1.5 mm body, 2.2 mm pin pitch), but thermal pad solder stencil aperture should be increased by 20% for full ceramic interface contact.
2SC5347E-TD-E Specifications
- Product attributes
- Attribute value
- Manufacturer:
- onsemi
- Series:
- -
- Package/Case:
- -
- Packaging:
- Bulk
- Product Status:
- Active
- Transistor Type:
- -
- Current - Collector (Ic) (Max):
- -
- Voltage - Collector Emitter Breakdown (Max):
- -
- Vce Saturation (Max) @ Ib, Ic:
- -
- Current - Collector Cutoff (Max):
- -
- DC Current Gain (hFE) (Min) @ Ic, Vce:
- -
- Power - Max:
- -
- Frequency - Transition:
- -
- Operating Temperature:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- -
- Supplier Device Package:
- -
2SC5347E-TD-E FAQ
1.How can I place an order for 2SC5347E-TD-E through Aetrix?
Please submit a Request for Quotation (RFQ) for 2SC5347E-TD-E on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 2SC5347E-TD-E reliable?
The price and inventory of 2SC5347E-TD-E are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 2SC5347E-TD-E is usually 5 days.
3.What payment methods are accepted for 2SC5347E-TD-E?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 2SC5347E-TD-E transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 2SC5347E-TD-E?
2SC5347E-TD-E orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 2SC5347E-TD-E order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 2SC5347E-TD-E?
For technical support, including 2SC5347E-TD-E datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 2SC5347E-TD-E requirements.
6.How does Aetrix verify that 2SC5347E-TD-E is sourced from the original manufacturer or authorized distributors?
All 2SC5347E-TD-E products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 2SC5347E-TD-E meets industry standards.
7.What is the process for return or replacement of 2SC5347E-TD-E?
All 2SC5347E-TD-E units undergo pre-shipment inspection (PSI). If there is an issue with 2SC5347E-TD-E, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 2SC5347E-TD-E part is unused and in its original packaging.
Return procedure for 2SC5347E-TD-E:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
2SC5347E-TD-E Tags
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