Toshiba Semiconductor and Storage 2SC5354,XGQ(O

Overview

2SC5354 from TOSHIBA is a silicon NPN bipolar junction transistor (BJT) designed for high-voltage, high-speed switching in power conversion circuits. It delivers V_CEO = 800 V, I_C = 5 A continuous, t_r ≤ 0.7 μs and t_f ≤ 0.5 μs at I_C = 2 A, and is used in switching regulators and DC-DC converters operating up to 360 V bus voltage.

For engineers reviewing the 2SC5354 datasheet, 2SC5354 pinout, 2SC5354 application, or 2SC5354 equivalent, key selection criteria include safe operating area (SOA) derating at elevated case temperatures, V_CE(sat) ≤ 1 V at I_C/I_B = 5, h_FE range of 15–60 at 0.5 A, and RoHS-compliant marking per Toshiba Lot No. underlining convention.

Technical Context

This triple-diffused NPN BJT employs a planar epitaxial structure optimized for fast turn-on/turn-off with low storage time (t_stg ≤ 4 μs). Its high V_CBO = 900 V supports robust voltage margin in flyback and forward converter topologies.

The device operates with base-emitter saturation voltage V_BE(sat) ≤ 1.3 V at I_C = 2 A / I_B = 0.4 A and exhibits h_FE ≥ 10 at 1 mA - enabling reliable drive across wide current ranges while maintaining thermal stability up to T_j = 150°C.

Key Specifications

Pinout & Package

Package: TO-247 (TOSHIBA designation 2-16C1A), isolated tab, 3-terminal through-hole, weight 4.7 g (typ.).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage NPN switching transistor applications.

Compared with BUL741 and MJE13009, the 2SC5354 uniquely balances 800 V blocking, sub-microsecond switching, and 5 A continuous current - making it optimal for 360–400 V industrial DC-DC and regulated adapter designs where both voltage headroom and dynamic performance are critical.

Availability

2SC5354 is available at Aetrix Electronics and suitable for switching regulator power stages, high-voltage DC-DC converters, and AC-DC adapter primary switches requiring stable component supply and long-term industrial availability.

Supply support for 2SC5354 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Toshiba Electronic Devices & Storage Corporation is a Japanese semiconductor manufacturer specializing in power devices, logic ICs, and memory solutions with global distribution and automotive-grade reliability validation.

The 2SC5354 belongs to Toshiba's legacy high-voltage bipolar transistor product line, engineered specifically for ruggedized industrial switching power supplies and offline AC-DC conversion systems demanding proven thermal and voltage endurance.

FAQ

What is the maximum continuous collector current rating for the 2SC5354 at 25°C case temperature?

The 2SC5354 has a maximum continuous collector current I_C of 5 A at T_c = 25°C, as specified in its Absolute Maximum Ratings table. This rating assumes adequate heatsinking and derates linearly with increasing case temperature - for example, to approximately 3.5 A at T_c = 100°C. Designers must verify thermal design using the device's 100 W power dissipation limit and SOA curves in the 2SC5354 datasheet.

Does the 2SC5354 support RoHS compliance, and how is it indicated on the package?

Yes, RoHS-compliant versions of the 2SC5354 are available. Compliance is indicated by an underlined Lot No. on the device marking - denoting [[G]]/RoHS COMPATIBLE. Non-underlined Lot Nos. indicate lead-containing versions. Toshiba confirms RoHS status per Directive 2011/65/EU, and users should verify the specific Lot No. marking and consult their Toshiba sales representative for material declarations applicable to the 2SC5354 batch.

What are the typical base drive requirements to fully saturate the 2SC5354 at 2 A collector current?

To achieve V_CE(sat) ≤ 1 V at I_C = 2 A, the 2SC5354 requires I_B = 0.4 A, corresponding to an I_C/I_B ratio of 5. This is confirmed in the Electrical Characteristics table. Base-emitter saturation voltage is ≤ 1.3 V under this condition, so drive circuitry must supply ≥ 0.4 A peak current with ≤ 1.3 V drop - typically implemented using a dedicated BJT driver or low-impedance MOSFET gate driver stage for the 2SC5354.

Can the 2SC5354 be used in parallel configurations for higher current handling?

Parallel operation of the 2SC5354 is not recommended without external emitter resistors and matched h_FE sorting. The device exhibits positive thermal coefficient for V_BE(sat), but variations in h_FE and thermal coupling can cause current imbalance. Toshiba does not specify guaranteed matching parameters for parallel use. For >5 A applications, consider single higher-rated alternatives or synchronous topologies instead of paralleling multiple 2SC5354 units.

How does the safe operating area (SOA) of the 2SC5354 behave at elevated case temperatures?

The 2SC5354 SOA is explicitly derated linearly with increasing case temperature, as shown in its datasheet graph. At T_c = 100°C, the maximum non-repetitive pulsed I_C drops significantly - e.g., from ~2000 A at 10 μs pulse width (T_c = 25°C) to ~1200 A at same duration (T_c = 100°C). Designers must apply the published SOA curves directly and avoid operation beyond the derated boundaries to prevent second breakdown failure of the 2SC5354.