onsemi 2SC536KE-NP
- Part No.:
- 2SC536KE-NP
- Manufacturer:
- onsemi
- Category:
- Single Bipolar Transistors
- Package:
- -
- Datasheet:
-
2SC536KE-NP.pdf
- Description:
- NPN SILICON TRANSISTOR
- Quantity:
- Payment:

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Inventory:37,377
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Product details
Overview
2SC536KE-NP from ON Semiconductor is an NPN bipolar junction transistor rated for 50 V VCEO, 150 mA IC, and 500 mW PC, featuring low VCE(sat) of –0.3 V at IC = 100 mA / IB = 10 mA, fT = 200 MHz, and hFE = 160–560 (rank-dependent). It is used in general-purpose amplification and switching circuits in consumer audio, power supply control, and signal conditioning stages.
For engineers reviewing the 2SC536KE-NP datasheet, pinout, applications, or equivalent options, key selection criteria include verified VCE(sat), hFE binning (F/G), fT performance at 10 mA, Cob = 3.0 pF at VCB = –6 V, and TO-92 (SC-43A/SOT-54) package compatibility with legacy through-hole layouts.
Technical Context
The 2SC536KE-NP operates as a general-purpose NPN BJT optimized for low-saturation switching and mid-frequency amplification. Its design supports DC to 200 MHz operation, with guaranteed hFE spread across two gain ranks (F: 160–320; G: 280–560) and stable fT at IC = 10 mA under VCE = 6 V bias.
Thermal performance is defined by a 150 °C maximum junction temperature and derated power dissipation (500 mW at Ta = 25 °C, decreasing linearly above 25 °C per the PC–Ta curve). The device meets Pb-Free requirements and is qualified per ON Semiconductor's industrial reliability standards.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCEO | 50 V - Maximum safe collector-emitter voltage before breakdown under open-base conditions. |
| IC | 150 mA - Continuous collector current rating; supports medium-power switching loads. |
| VCE(sat) | –0.3 V at IC/IB = 100 mA/10 mA - Low saturation voltage minimizes conduction loss in switching applications. |
| fT | 200 MHz - Gain-bandwidth product confirms usable RF performance up to VHF band in small-signal amplifiers. |
| hFE | 160–560 (rank F/G) - Wide DC current gain range enables flexible biasing in amplifier and driver designs. |
| Cob | 3.0 pF at VCB = –6 V - Low output capacitance supports higher frequency stability and reduced Miller effect. |
| PC | 500 mW at Ta = 25 °C - Power dissipation limit defines thermal design margin for PCB copper area and ambient conditions. |
Pinout & Package
2SC536KE-NP is housed in the NPA-WA variant of the SC-43A (TO-92, SOT-54) plastic package, with standardized lead configuration: Pin 1 = Emitter, Pin 2 = Collector, Pin 3 = Base. The package measures 4.5 mm × 3.7 mm × 3.5 mm (L×W×H), weighs 0.19 g, and features axial leads compatible with manual soldering and wave soldering processes.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (Emitter) | Current sink terminal for NPN operation | Connected to ground or low-impedance return path; polarity-sensitive for correct biasing. |
| 2 (Collector) | Current source terminal | Typically connected to load or supply rail; carries full switched/amplified output current. |
| 3 (Base) | Control input for carrier injection | Receives drive current to modulate collector current; requires current-limiting resistor in most configurations. |
Key Features
| Feature | Design Value |
|---|---|
| Low VCE(sat) | –0.3 V enables <100 mW conduction loss at 100 mA, improving efficiency in battery-powered switches. |
| High fT | 200 MHz allows use in IF amplifiers, oscillator buffers, and broadband preamp stages up to 100 MHz. |
| Wide ASO | Guaranteed Safe Operating Area supports pulsed ICP = 400 mA (100 ms), enabling short-duration surge handling. |
| Gain binning | Two hFE ranks (F/G) allow precise matching in differential pairs or cascaded gain stages. |
| Pb-Free packaging | NPA-WA package complies with RoHS Directive 2011/65/EU and JEDEC J-STD-020 moisture sensitivity level MSL3. |
Applications
| Audio Pre-amplifier Stage | DC-DC Converter Switch Driver |
|---|---|
Use Scenario: Low-noise voltage amplification of line-level analog signals prior to ADC sampling in portable audio recorders. IC Role / Device Role / Timing Role: NPN small-signal amplifier operating in common-emitter configuration with emitter degeneration. Use Value: hFE ≥ 280 (G-rank) ensures stable 20–20 kHz gain flatness; low VCE(sat) reduces idle power in always-on front-end stages. | Use Scenario: Driving the gate of a power MOSFET in a 12 V input, 5 V output buck converter operating at 500 kHz. IC Role / Device Role / Timing Role: Digital switch providing fast turn-on/turn-off control via saturated base drive. Use Value: fT = 200 MHz and low Cob minimize switching delay; VCE(sat) ≤ 0.3 V limits driver-stage conduction loss. |
| LED Constant-Current Sink | Industrial Sensor Signal Conditioning |
Use Scenario: Precision current regulation for high-brightness white LEDs in emergency lighting modules. IC Role / Device Role / Timing Role: Linear current sink with feedback-resistor-controlled IC in emitter-follower topology. Use Value: Tight hFE tolerance (±20% within rank) ensures consistent LED brightness across production batches. | Use Scenario: Amplifying millivolt-level thermocouple outputs in programmable logic controller (PLC) analog input modules. IC Role / Device Role / Timing Role: First-stage instrumentation amplifier input transistor with matched pair biasing. Use Value: Low ICBO ≤ 0.1 μA minimizes input offset drift over temperature; wide ASO accommodates transient overloads during field wiring faults. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar NPN general-purpose transistor applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| 2SC536NF-NPA-AT | Same die, F-rank hFE (160–320), identical absolute max ratings and electrical specs. | No functional difference; differs only in hFE binning and marking (C536F vs C536KE). | Select when tighter low-end hFE control is required for predictable minimum gain in critical bias networks. |
| MPSA18 | Higher VCEO = 50 V (same), but lower fT = 100 MHz and hFE = 100–300; Cob = 4.0 pF. | Less suitable for >50 MHz signal paths; acceptable for DC/low-frequency switching where gain consistency is primary. | Choose when cost sensitivity outweighs RF performance needs and existing MPSA18 footprint reuse is prioritized. |
Compared with 2SC536KE-NP, the 2SC536NF-NPA-AT offers identical performance with narrower hFE range, while the MPSA18 trades bandwidth and gain for broader industry availability-making the 2SC536KE-NP optimal for designs requiring verified 200 MHz fT and G-rank gain in TO-92 form factor.
Availability
2SC536KE-NP is available at Aetrix Electronics and suitable for audio pre-amplifier stages, DC-DC converter switch drivers, and industrial sensor signal conditioning requiring stable component supply and long-term manufacturing continuity.
Supply support for 2SC536KE-NP includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
ON Semiconductor (now onsemi) is a global semiconductor supplier specializing in energy-efficient power management, analog, sensing, and connectivity solutions for automotive, industrial, cloud, and consumer markets.
The 2SC536KE-NP belongs to ON Semiconductor's legacy NPA-WA series of general-purpose BJTs, designed for cost-sensitive, high-reliability linear and switching applications in industrial controls and consumer electronics.
FAQ
What is the maximum collector-emitter voltage rating for the 2SC536KE-NP?
The 2SC536KE-NP has a maximum collector-emitter voltage rating (VCEO) of 50 V under open-base conditions at Ta = 25 °C. This rating remains valid up to Tj = 150 °C, but derating is required above 25 °C ambient per the device's thermal characteristics. Exceeding this voltage risks avalanche breakdown and permanent damage to the 2SC536KE-NP.
Does the 2SC536KE-NP have a specified gain rank, and how does it affect circuit design?
Yes, the 2SC536KE-NP is G-rank, meaning its DC current gain (hFE) is guaranteed between 280 and 560 at VCE = 6 V and IC = 1 mA. This higher gain range improves bias stability in amplifier stages and reduces required base drive current in switching applications compared to F-rank variants like the 2SC536NF-NPA-AT-directly impacting resistor sizing and noise performance in the 2SC536KE-NP circuit implementation.
What is the typical output capacitance (Cob) of the 2SC536KE-NP, and why does it matter?
The 2SC536KE-NP exhibits a typical output capacitance (Cob) of 3.0 pF at VCB = –6 V and f = 1 MHz. This low value reduces Miller multiplication in common-emitter amplifiers, preserving bandwidth and phase margin-especially critical in RF buffer and oscillator designs where parasitic capacitance directly limits the usable frequency range of the 2SC536KE-NP.
Can the 2SC536KE-NP be used in pulse applications, and what is its peak current rating?
Yes, the 2SC536KE-NP supports pulsed operation with a peak collector current (ICP) rating of 400 mA for pulses up to 100 ms. This capability is validated within its Safe Operating Area (ASO) curve and enables use in intermittent-load drivers, relay coils, and surge-tolerant sensor interfaces-provided average power dissipation stays within the 500 mW limit and thermal design accounts for pulse duty cycle in the 2SC536KE-NP layout.
Is the 2SC536KE-NP RoHS-compliant and suitable for automated assembly?
Yes, the 2SC536KE-NP is Pb-Free and RoHS-compliant per EU Directive 2011/65/EU, packaged in the NPA-WA variant of SC-43A (TO-92). Its axial leads and standard dimensions support both manual soldering and wave soldering; moisture sensitivity level is MSL3 per J-STD-020, requiring standard floor-life handling before reflow-making it fully compatible with high-volume automated assembly for the 2SC536KE-NP.
2SC536KE-NP Specifications
- Product attributes
- Attribute value
- Manufacturer:
- onsemi
- Series:
- -
- Package/Case:
- -
- Packaging:
- Bulk
- Product Status:
- Active
- Transistor Type:
- -
- Current - Collector (Ic) (Max):
- -
- Voltage - Collector Emitter Breakdown (Max):
- -
- Vce Saturation (Max) @ Ib, Ic:
- -
- Current - Collector Cutoff (Max):
- -
- DC Current Gain (hFE) (Min) @ Ic, Vce:
- -
- Power - Max:
- -
- Frequency - Transition:
- -
- Operating Temperature:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- -
- Supplier Device Package:
- -
2SC536KE-NP FAQ
1.How can I place an order for 2SC536KE-NP through Aetrix?
Please submit a Request for Quotation (RFQ) for 2SC536KE-NP on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 2SC536KE-NP reliable?
The price and inventory of 2SC536KE-NP are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 2SC536KE-NP is usually 5 days.
3.What payment methods are accepted for 2SC536KE-NP?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 2SC536KE-NP transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 2SC536KE-NP?
2SC536KE-NP orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 2SC536KE-NP order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 2SC536KE-NP?
For technical support, including 2SC536KE-NP datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 2SC536KE-NP requirements.
6.How does Aetrix verify that 2SC536KE-NP is sourced from the original manufacturer or authorized distributors?
All 2SC536KE-NP products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 2SC536KE-NP meets industry standards.
7.What is the process for return or replacement of 2SC536KE-NP?
All 2SC536KE-NP units undergo pre-shipment inspection (PSI). If there is an issue with 2SC536KE-NP, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 2SC536KE-NP part is unused and in its original packaging.
Return procedure for 2SC536KE-NP:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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