Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > Bipolar (BJT) > Single Bipolar Transistors

onsemi 2SC536KF-NP

Name: 2SC536KF-NP
Brand: onsemi
SKU: 2SC536KF-NP
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: 2SC536KF-NP

Manufacturer:: onsemi

Category:: Single Bipolar Transistors

Package:: -

Datasheet:: 2SC536KF-NP.pdf

Description:: NPN SILICON TRANSISTOR

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:33,000

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

2SC536KF-NP from onsemi is an NPN bipolar junction transistor rated for 50 V V_CEO, 150 mA I_C, and 500 mW P_C, featuring low V_CE(sat) of –0.3 V at I_C = 100 mA / I_B = 10 mA, f_T = 200 MHz, and h_FE = 160–560 (rank-dependent). It is used in general-purpose amplification and switching circuits in consumer audio, power supply control, and signal conditioning stages.

For engineers reviewing the 2SC536KF-NP datasheet, pinout, applications, or equivalent options, key selection criteria include its TO-92-compatible SC-43A package, guaranteed h_FE binning (F/G), low saturation voltage, wide ASO, and operation up to 200 MHz - critical for reliable low-to-high-frequency analog and digital switching designs.

Technical Context

The 2SC536KF-NP operates as a single NPN silicon BJT with fixed-emitter configuration and DC-coupled gain control. Its design supports linear amplification (h_FE stable across I_C = 0.1–100 mA) and fast switching (f_T = 200 MHz, C_ob = 3.0 pF at V_CB = 6 V), enabled by optimized epitaxial base structure and low parasitic capacitance.

It is specified for operation from –55°C to +150°C junction temperature, with absolute maximum ratings including V_CBO = 60 V, V_EBO = 6 V, and I_CP = 400 mA (10 ms pulse). The device meets Pb-free requirements and is qualified per onsemi's industrial reliability standards for continuous-duty analog and switching applications.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CEO	50 V - Maximum safe collector-emitter voltage under open-base conditions; defines upper rail limit in switch/amplifier stages.
I_C	150 mA - Continuous DC collector current; supports medium-power load driving without forced cooling.
V_CE(sat)	0.3 V @ I_C/I_B = 100 mA/10 mA - Low saturation voltage minimizes conduction loss in switching regulators and logic interfaces.
f_T	200 MHz - Gain-bandwidth product enables stable small-signal amplification up to VHF band in RF front-ends or oscillator buffers.
h_FE	160–560 (F/G rank) - Tight DC current gain binning ensures predictable biasing and consistent stage gain across production lots.
C_ob	3.0 pF @ V_CB = 6 V - Low output capacitance reduces Miller effect, supporting high-speed switching and broadband stability.
P_C	500 mW - Thermal dissipation capability allows operation at full current in ambient ≤ 75°C with minimal heatsinking.

Pinout & Package

2SC536KF-NP is housed in the SC-43A package (equivalent to TO-92 and SOT-54), a through-hole plastic molded case with 0.19 g mass and standardized lead spacing. Pin identification follows standard NPN emitter-down orientation.

Pin/Terminal	Circuit Role	Design Meaning
1	Emitter	Current sink node; connects to ground or low-impedance return path in common-emitter configurations.
2	Collector	Current source node; ties to load or supply rail; requires thermal consideration due to P_C = 500 mW rating.
3	Base	Control input; accepts current-limited drive (e.g., R_B ≥ 1 kΩ) to achieve target I_C with defined h_FE.

Key Features

Feature	Design Value
Low V_CE(sat)	0.3 V enables <150 mW conduction loss at 100 mA, improving efficiency in battery-powered switches.
Wide ASO	Robust Safe Operating Area supports pulsed I_C up to 400 mA (10 ms), allowing surge-tolerant motor or relay drivers.
High f_T	200 MHz bandwidth permits use in IF amplifiers, tone generators, and clock buffer stages without external compensation.
Rank-binned h_FE	F/G h_FE classification (160–320 / 280–560) simplifies production-level bias network design and reduces calibration overhead.
Pb-free SC-43A	RoHS-compliant TO-92 footprint ensures drop-in compatibility with legacy through-hole assembly lines and reflow profiles.

Applications

Audio Pre-amplifier Stage	DC-DC Converter Switch Driver
Use Scenario: Low-noise voltage amplification of microphone or line-level signals before ADC sampling. IC Role / Device Role / Timing Role: NPN small-signal amplifier in common-emitter topology with emitter degeneration. Use Value: High h_FE (≥160) and low V_CE(sat) ensure >40 dB gain stability and minimal DC offset drift over temperature.	Use Scenario: Driving gate of external MOSFET in non-isolated buck converter feedback loop. IC Role / Device Role / Timing Role: Current-source switch controlling MOSFET gate charge/discharge timing. Use Value: 200 MHz f_T and 400 mA pulse rating support clean 500 kHz switching edges with <50 ns rise/fall times.
LED Constant-Current Sink	Industrial Sensor Signal Conditioning
Use Scenario: Precision current regulation for indicator or status LEDs in PLC I/O modules. IC Role / Device Role / Timing Role: Linear current sink with base-biased emitter resistor feedback. Use Value: Tight h_FE binning and low V_CE(sat) enable ±3% LED current accuracy across 0–70°C ambient.	Use Scenario: Amplifying millivolt-level thermocouple or strain gauge outputs in data acquisition front-ends. IC Role / Device Role / Timing Role: Low-drift DC-coupled amplifier with matched h_FE for differential pair biasing. Use Value: Stable h_FE vs. I_C (IT00501 curve) and 150°C T_j rating support uncooled operation in harsh industrial enclosures.

Audio Pre-amplifier Stage

DC-DC Converter Switch Driver

Use Scenario: Low-noise voltage amplification of microphone or line-level signals before ADC sampling.

IC Role / Device Role / Timing Role: NPN small-signal amplifier in common-emitter topology with emitter degeneration.

Use Value: High h_FE (≥160) and low V_CE(sat) ensure >40 dB gain stability and minimal DC offset drift over temperature.

Use Scenario: Driving gate of external MOSFET in non-isolated buck converter feedback loop.

IC Role / Device Role / Timing Role: Current-source switch controlling MOSFET gate charge/discharge timing.

Use Value: 200 MHz f_T and 400 mA pulse rating support clean 500 kHz switching edges with <50 ns rise/fall times.

LED Constant-Current Sink

Industrial Sensor Signal Conditioning

Use Scenario: Precision current regulation for indicator or status LEDs in PLC I/O modules.

IC Role / Device Role / Timing Role: Linear current sink with base-biased emitter resistor feedback.

Use Value: Tight h_FE binning and low V_CE(sat) enable ±3% LED current accuracy across 0–70°C ambient.

Use Scenario: Amplifying millivolt-level thermocouple or strain gauge outputs in data acquisition front-ends.

IC Role / Device Role / Timing Role: Low-drift DC-coupled amplifier with matched h_FE for differential pair biasing.

Use Value: Stable h_FE vs. I_C (IT00501 curve) and 150°C T_j rating support uncooled operation in harsh industrial enclosures.

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN general-purpose transistor applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
2SC536NG-NPA-AT	Same die, G-rank h_FE (280–560) vs. KF-NP's unspecified rank; identical SC-43A package and electrical specs.	Preferred where higher minimum h_FE improves bias margin in high-gain amplifier stages.	Select 2SC536NG-NPA-AT when guaranteed h_FE ≥280 is required for production yield assurance.
MPSA18	Higher V_CEO (50 V same), but lower f_T (150 MHz), higher V_CE(sat) (0.5 V), and no h_FE binning.	Suitable for low-frequency switching only; not recommended for >10 MHz signal paths or precision current sinks.	Choose MPSA18 only if cost sensitivity outweighs bandwidth and saturation performance requirements.

Compared with 2SC536KF-NP, 2SC536NG-NPA-AT offers tighter h_FE assurance for critical bias networks, while MPSA18 trades bandwidth and saturation performance for broader distributor availability - making 2SC536KF-NP optimal for balanced speed, gain, and thermal robustness in mid-frequency analog systems.

Availability

2SC536KF-NP is available at Aetrix Electronics and suitable for audio pre-amplifiers, DC-DC converter drivers, and industrial sensor signal conditioners requiring stable component supply, consistent h_FE binning, and TO-92 footprint compatibility.

Supply support for 2SC536KF-NP includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

onsemi (formerly ON Semiconductor) is a global semiconductor supplier specializing in energy-efficient power, analog, sensor, and connectivity solutions for automotive, industrial, cloud, and IoT applications.

The 2SC536KF-NP belongs to onsemi's general-purpose bipolar transistor family, designed for cost-sensitive, high-reliability analog and switching functions in consumer, industrial, and power management systems.

FAQ

What is the package type and pin configuration of the 2SC536KF-NP?

The 2SC536KF-NP uses the SC-43A package - a Pb-free, through-hole plastic case identical in footprint to TO-92 and SOT-54. Pin 1 is Emitter, Pin 2 is Collector, and Pin 3 is Base, viewed with flat side facing outward and leads down. This configuration is confirmed in onsemi's EN6324B package drawing and ordering documentation.

Does the 2SC536KF-NP have a specified h_FE rank, and how does it compare to 2SC536NF/NG variants?

The 2SC536KF-NP does not specify F or G rank in its marking or ordering number; however, its electrical specifications align fully with the 2SC536N family's documented h_FE ranges (160–560). Unlike 2SC536NF-NPA-AT (F-rank, 160–320) and 2SC536NG-NPA-AT (G-rank, 280–560), the KF-NP variant is unranked but tested to meet the full family specification limits per No.6324 datasheet.

What is the maximum operating frequency supported by the 2SC536KF-NP in amplifier applications?

The 2SC536KF-NP has a gain-bandwidth product (f_T) of 200 MHz, verified at V_CE = 6 V and I_C = 10 mA. In practical small-signal amplifier designs, usable bandwidth extends to ~50–80 MHz depending on gain setting and layout parasitics - sufficient for IF stages, tone generation, and clock buffering, as shown in IT00503 characteristic curves.

Can the 2SC536KF-NP replace the 2SC536N in existing designs without layout changes?

Yes - the 2SC536KF-NP shares identical SC-43A packaging, pinout, absolute maximum ratings, and electrical characteristics with the base 2SC536N series. No PCB modifications are needed; it is a direct form-fit-function replacement, as confirmed by onsemi's ordering information and package dimension drawings (7542-001).

What thermal derating applies to the 2SC536KF-NP at elevated ambient temperatures?

The 2SC536KF-NP's collector dissipation (P_C) derates linearly above 25°C ambient: from 500 mW at T_a = 25°C to 0 mW at T_a = 150°C, per the PC–Ta curve (IT00510). At 75°C ambient, maximum allowable P_C is ~300 mW - requiring appropriate copper area or airflow if operating near I_C = 150 mA continuously.

2SC536KF-NP Specifications

Product attributes: Attribute value

Manufacturer:: onsemi

Series:: -

Package/Case:: -

Packaging:: Bulk

Product Status:: Active

Transistor Type:: -

Current - Collector (Ic) (Max):: -

Voltage - Collector Emitter Breakdown (Max):: -

Vce Saturation (Max) @ Ib, Ic:: -

Current - Collector Cutoff (Max):: -

DC Current Gain (hFE) (Min) @ Ic, Vce:: -

Power - Max:: -

Frequency - Transition:: -

Operating Temperature:: -

Grade:: -

Qualification:: -

Mounting Type:: -

Supplier Device Package:: -

2SC536KF-NP FAQ

1.How can I place an order for 2SC536KF-NP through Aetrix?

Please submit a Request for Quotation (RFQ) for 2SC536KF-NP on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 2SC536KF-NP reliable?

The price and inventory of 2SC536KF-NP are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 2SC536KF-NP is usually 5 days.

3.What payment methods are accepted for 2SC536KF-NP?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 2SC536KF-NP transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for 2SC536KF-NP?

2SC536KF-NP orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 2SC536KF-NP order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 2SC536KF-NP?

For technical support, including 2SC536KF-NP datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 2SC536KF-NP requirements.

6.How does Aetrix verify that 2SC536KF-NP is sourced from the original manufacturer or authorized distributors?

All 2SC536KF-NP products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 2SC536KF-NP meets industry standards.

7.What is the process for return or replacement of 2SC536KF-NP?

All 2SC536KF-NP units undergo pre-shipment inspection (PSI). If there is an issue with 2SC536KF-NP, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 2SC536KF-NP part is unused and in its original packaging.

Return procedure for 2SC536KF-NP:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-09-09 Counterfeit Electronic Components: How to Detect, Authenticate, and Test Suspect Parts

Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …

2026-09-08 Obsolete Electronic Components: How to Source and Evaluate Replacements

A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.

2026-09-07 TTL vs CMOS Logic Levels: 74HC and 74HCT Compatibility Explained

TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.

2026-09-04 Logic Level Shifter: How to Connect 3.3V and 5V Logic Safely

A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.

2026-09-03 74HC595 vs TPIC6B595: Output Drive, Pinout, Current, and Load Selection

The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…

2026-09-02 74HC595 Pinout, Timing, Output Current, and Applications

The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…

2026-09-01 Latch vs Flip-Flop: Timing, Differences and Design Choices

A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…

2026-08-30 D Latch Circuit: Truth Table, Timing, ICs and Applications

A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …

2026-08-28 SR Latch Explained: NOR and NAND Circuits, Truth Tables, and Applications

An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…

2026-08-27 Latch Circuit: SR and D Latches, Truth Tables, Timing, and Applications

Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…