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onsemi 2SC5566-TD-E

Part No.:
2SC5566-TD-E
Manufacturer:
onsemi
Category:
Single Bipolar Transistors
Package:
TO-243AA
Datasheet:
Aetrix2SC5566-TD-E.pdf
Description:
TRANS NPN 50V 4A PCP
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:1,765

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Product details

Overview

2SC5566-TD-E from onsemi is an NPN bipolar junction transistor in PCP (SOT-89) package, rated for 100 VCB, 100 VCE, 4 A continuous collector current, and 3.5 W power dissipation at Tc = 25°C. It delivers low VCE(sat) of 85 mV (typ) at IC = 1 A / IB = 50 mA and supports high-speed switching with ton = 35 ns and tf = 20 ns - used in motor drivers, lamp drivers, and relay interface circuits.

For engineers reviewing the 2SC5566-TD-E datasheet, pinout, applications, or equivalent options, key selection criteria include verified VCE(sat) performance at 2 A, fT = 400 MHz gain-bandwidth, Cob = 15 pF output capacitance, thermal derating on ceramic substrate, and PCP package compatibility with SOT-89 footprint layouts.

Technical Context

This NPN transistor employs onsemi's FBET and MBIT processes to achieve large current handling and low saturation voltage. Its design targets medium-power switching applications where fast turn-on/turn-off and stable hFE (200–560 at IC = 500 mA) are critical under ambient temperatures from –55°C to +150°C.

The device operates with a maximum junction temperature of 150°C and exhibits defined switching behavior per the specified test circuit: VCC = 25 V, RL = 25 Ω, pulse width = 20 μs, and DC ≤ 1%. Storage time (tstg) reaches 300 ns max, confirming suitability for moderate-frequency digital switching rather than RF amplification.

Key Specifications

ParameterValue and Actual Design Meaning
VCEO50 V - Maximum safe collector-emitter voltage with open base; defines upper rail limit in switch designs
IC (cont)4 A - Continuous collector current rating; sets thermal design baseline for PCB copper area and heatsinking
VCE(sat) @ 1A/50mA85 mV (typ) - Low conduction loss enabling <100 mW dissipation at 1 A, critical for efficiency in driver stages
fT400 MHz - Gain-bandwidth product confirming usable switching up to ~50–100 MHz with proper biasing
Cob15 pF @ VCB = 10 V - Output capacitance limiting high-frequency rise/fall times and affecting gate drive interaction
hFE200–560 @ VCE = 2 V, IC = 500 mA - Wide DC gain range requiring base current design margin for worst-case β
PC @ Tc=25°C3.5 W - Case-referenced power dissipation; requires mechanical mounting to thermally conductive surface

Pinout & Package

2SC5566-TD-E uses the PCP package - identical in outline and land pattern to JEDEC SOT-89 (TO-243) and JEITA SC-62. It features a molded plastic body with exposed collector tab for thermal conduction and is supplied in 1,000-piece reels (TD packing type).

Pin/TerminalCircuit RoleDesign Meaning
1BaseControl terminal; requires current-limited drive (max IB = 600 mA) to avoid secondary breakdown
2CollectorMain power output terminal; electrically and thermally connected to exposed metal tab - must be soldered to copper pour
3EmitterReference/return path; tied to system ground or low-side return in common-emitter configurations

Key Features

FeatureDesign Value
Low VCE(sat)85 mV typ at 1 A enables <0.1 W conduction loss - reduces heat generation in high-duty-cycle drivers
High-speed switchington/tf = 35 ns / 20 ns supports PWM frequencies up to ~5 MHz before significant timing skew occurs
Large IC capability4 A continuous rating allows direct driving of solenoids, small DC motors, and LED arrays without external buffers
Thermal robustness3.5 W dissipation at Tc = 25°C with ceramic substrate mounting enables stable operation in compact industrial enclosures
Ultrasmall PCP packageSOT-89 footprint (4.5 × 2.5 × 1.6 mm) saves board space while maintaining thermal pad for heat transfer

Applications

Relay Driver CircuitLamp Driver Module

Use Scenario: Driving 24 VDC electromagnetic relays with coil resistance ~200 Ω in PLC I/O modules.

IC Role / Device Role / Timing Role: NPN switch in common-emitter configuration, sinking relay coil current through emitter to ground.

Use Value: VCE(sat) ≤ 130 mV at 2 A ensures <260 mW loss during hold state, eliminating need for heatsink in sealed enclosures.

Use Scenario: Controlling 12 V incandescent indicator lamps (10–25 W) in automotive dashboard clusters.

IC Role / Device Role / Timing Role: High-current saturated switch interfacing microcontroller GPIO to lamp load.

Use Value: 4 A rating handles 25 W lamp inrush (≥3× steady-state), while 300 ns storage time prevents contact chatter during rapid on/off cycling.

Motor Driver StageIndustrial Solenoid Interface

Use Scenario: Half-bridge low-side switch for 24 V brushed DC motors (≤50 W) in factory automation actuators.

IC Role / Device Role / Timing Role: Power stage transistor controlled by PWM signal; collector connected to motor winding, emitter grounded.

Use Value: fT = 400 MHz and low Cob minimize switching distortion at 20 kHz PWM, preserving torque linearity.

Use Scenario: Actuating 24 V AC/DC solenoids (Ihold = 1.2 A, Iinrush = 3.5 A) in pneumatic valve manifolds.

IC Role / Device Role / Timing Role: Single-transistor switch replacing mechanical contactors in compact control boxes.

Use Value: 7 A pulse rating (ICP) safely covers solenoid inrush without derating, and PCP thermal pad maintains Tj < 130°C at 1 Hz duty cycle.

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN medium-power switching applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
MJD127GHigher VCEO = 100 V, lower fT = 3 MHz, larger TO-252 packagePreferred for higher-voltage flyback protection; less suitable for high-frequency PWMSelect when VCE > 60 V required and switching frequency < 100 kHz
2SD2656-ESame PCP package, but VCEO = 60 V, VCE(sat) = 150 mV (max) at 2 A, lower hFE min = 120Marginally higher saturation loss; acceptable where thermal headroom existsChoose when cost sensitivity outweighs 65 mV VCE(sat) advantage and 50°C derating is acceptable

Compared with MJD127G and 2SD2656-E, the 2SC5566-TD-E offers superior high-frequency response and lowest conduction loss in the SOT-89 form factor - making it optimal for space-constrained, thermally demanding, and moderately high-speed switching roles where 50 V VCEO suffices.

Availability

2SC5566-TD-E is available at Aetrix Electronics and suitable for relay drivers, lamp drivers, motor drivers, and solenoid interfaces requiring stable component supply across industrial automation, building controls, and transportation electronics programs.

Supply support for 2SC5566-TD-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

onsemi (formerly ON Semiconductor) is a global semiconductor supplier focused on energy-efficient innovation for automotive, industrial, cloud, and IoT applications.

The 2SC5566-TD-E belongs to onsemi's general-purpose bipolar transistor product line, engineered for reliable medium-power switching in space- and thermally constrained applications using advanced FBET/MBIT fabrication.

FAQ

What is the maximum continuous collector current rating for the 2SC5566-TD-E?

The 2SC5566-TD-E has a maximum continuous collector current (IC) rating of 4 A at Ta = 25°C. This rating assumes proper PCB thermal management - specifically mounting on a ceramic substrate (250 mm² × 0.8 mm) - and derates linearly above 25°C ambient. At case temperature Tc = 25°C, the device supports 3.5 W dissipation, consistent with its 4 A IC capability under saturated switching conditions.

Does the 2SC5566-TD-E have a Pb-free finish and RoHS compliance?

Yes, the 2SC5566-TD-E carries the "-E" suffix indicating lead-free (Pb-free) termination and full compliance with RoHS Directive 2011/65/EU. The device uses matte tin plating over copper leads and meets JEDEC J-STD-020 moisture sensitivity level (MSL) requirements for standard SMT reflow profiles. This makes the 2SC5566-TD-E suitable for environmentally regulated industrial and automotive production lines.

What is the typical VCE(sat) of the 2SC5566-TD-E at 2 A collector current?

The typical VCE(sat) of the 2SC5566-TD-E at IC = 2 A and IB = 100 mA is 150 mV, with a maximum specification of 225 mV. This low saturation voltage directly reduces conduction losses - for example, only 300 mW dissipated at 2 A - supporting efficient operation in thermally limited PCB layouts. The value is measured under standardized conditions (VCE = 2 V, Ta = 25°C) and remains stable across the –25°C to +75°C operating range per published curves.

Can the 2SC5566-TD-E replace the 2SC5566-TL-E in existing designs?

Yes, the 2SC5566-TD-E is functionally and mechanically interchangeable with the 2SC5566-TL-E. Both share identical electrical specifications, PCP package dimensions, pinout (Base–Collector–Emitter), and thermal characteristics. The only difference is packing method: "TD" denotes 1,000 pcs./reel tape-and-reel, while "TL" indicates 3,000 pcs./reel. No layout or schematic changes are needed when substituting 2SC5566-TD-E for 2SC5566-TL-E in production or repair scenarios.

What is the gain-bandwidth product (fT) of the 2SC5566-TD-E and how is it measured?

The gain-bandwidth product (fT) of the 2SC5566-TD-E is 400 MHz, measured at VCE = 10 V, IC = 500 mA, and f = 100 MHz under small-signal conditions. This parameter reflects the frequency at which short-circuit current gain drops to unity and confirms the device's suitability for high-speed switching - not RF amplification. Published fT data shows minimal variation across temperature (–25°C to +75°C), ensuring predictable timing behavior in industrial environments where the 2SC5566-TD-E is commonly deployed.

2SC5566-TD-E Specifications

Product attributes
Attribute value
Manufacturer:
onsemi
Series:
-
Package/Case:
TO-243AA
Packaging:
Tape & Reel (TR)
Product Status:
Active
Transistor Type:
NPN
Current - Collector (Ic) (Max):
4 A
Voltage - Collector Emitter Breakdown (Max):
50 V
Vce Saturation (Max) @ Ib, Ic:
225mV @ 100mA, 2A
Current - Collector Cutoff (Max):
1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:
200 @ 500mA, 2V
Power - Max:
1.3 W
Frequency - Transition:
400MHz
Operating Temperature:
150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
PCP

2SC5566-TD-E FAQ

1.How can I place an order for 2SC5566-TD-E through Aetrix?

Please submit a Request for Quotation (RFQ) for 2SC5566-TD-E on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 2SC5566-TD-E reliable?

The price and inventory of 2SC5566-TD-E are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 2SC5566-TD-E is usually 5 days.

3.What payment methods are accepted for 2SC5566-TD-E?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 2SC5566-TD-E transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for 2SC5566-TD-E?

2SC5566-TD-E orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 2SC5566-TD-E order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 2SC5566-TD-E?

For technical support, including 2SC5566-TD-E datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 2SC5566-TD-E requirements.

6.How does Aetrix verify that 2SC5566-TD-E is sourced from the original manufacturer or authorized distributors?

All 2SC5566-TD-E products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 2SC5566-TD-E meets industry standards.

7.What is the process for return or replacement of 2SC5566-TD-E?

All 2SC5566-TD-E units undergo pre-shipment inspection (PSI). If there is an issue with 2SC5566-TD-E, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 2SC5566-TD-E part is unused and in its original packaging.

Return procedure for 2SC5566-TD-E:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

2SC5566-TD-E Tags

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