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Home > Products > Discrete Semiconductor Products > Transistors > Bipolar (BJT) > Single Bipolar Transistors

onsemi 2SC5658M3T5G

Name: 2SC5658M3T5G
Brand: onsemi
SKU: 2SC5658M3T5G
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: 2SC5658M3T5G

Manufacturer:: onsemi

Category:: Single Bipolar Transistors

Package:: SOT-723

Datasheet:: 2SC5658M3T5G.pdf

Description:: TRANS NPN 50V 0.1A SOT-723

Quantity:: RFQ Add To RFQ list

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Product details

Overview

2SC5658M3T5G from onsemi is an NPN silicon general-purpose amplifier transistor in SOT-723 package, rated for 50 V_CEO, 150 mA continuous collector current, and 260 mW power dissipation. It delivers high DC current gain (h_FE = 120–560 at I_C = 1.0 mA), low saturation voltage (V_CE(sat) ≤ 0.4 V at I_C/I_B = 10), and 180 MHz transition frequency - optimized for compact audio preamplifier, sensor signal conditioning, and low-power switching stages.

For engineers reviewing the 2SC5658M3T5G datasheet, pinout, applications, or equivalent options, key selection criteria include its AEC-Q101 qualification, ESD robustness (HBM 2000 V), Pb-free SOT-723 footprint, and verified h_FE range across temperature (−55 °C to +150 °C).

Technical Context

This device operates as a discrete NPN bipolar junction transistor with fixed-emitter bias topology, supporting linear amplification and saturated switching modes. Its thermal design targets FR-4 PCB mounting with minimum footprint, and junction temperature is rated up to 150 °C under 260 mW dissipation.

Electrical behavior is characterized at 25 °C with defined test conditions: h_FE measured at V_CE = 6.0 V and I_C = 1.0 mA; f_T at V_CE = 12 V, I_C = 2.0 mA, f = 30 MHz; V_CE(sat) at I_C = 50 mA and I_B = 5.0 mA. Cutoff currents (I_CBO, I_EBO) are specified at V_CB = 30 V and V_EB = 4.0 V respectively.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CEO	50 V - Maximum safe collector-emitter voltage before breakdown; enables use in 24 V rail signal chains.
I_C (cont.)	150 mA - Continuous collector current rating; supports medium-gain small-signal amplification without derating at 25 °C.
h_FE	120–560 - Wide DC current gain range at I_C = 1.0 mA; allows consistent biasing across production lots in linear stages.
V_CE(sat)	≤ 0.4 V - Low saturation voltage at I_C/I_B = 10; minimizes conduction loss in switching applications.
f_T	180 MHz - Transition frequency at V_CE = 12 V, I_C = 2 mA; supports audio-band and low-MHz RF amplification.
P_D	260 mW - Power dissipation on FR-4 board; defines thermal limits for SOT-723 layout without heatsinking.
ESD HBM	2000 V - Human Body Model rating; ensures handling robustness during manual assembly and rework.

Pinout & Package

2SC5658M3T5G uses the SOT-723 surface-mount package (Case 631AA), measuring 1.20 × 0.80 × 0.50 mm with 0.40 mm lead pitch. This ultra-compact three-terminal outline supports high-density PCB layouts in space-constrained consumer and automotive modules.

Pin/Terminal	Circuit Role	Design Meaning
1	Base	Control electrode for forward-active bias; requires current-limited drive to achieve target h_FE-based gain.
2	Emitter	Common reference terminal in common-emitter configuration; tied to ground or low-impedance return path.
3	Collector	Output current sink node; connects to load or next-stage input with voltage headroom up to 50 V.

Key Features

Feature	Design Value
High h_FE range	120–560 at I_C = 1.0 mA - Enables stable DC biasing across process variation without feedback trimming.
Low V_CE(sat)	≤ 0.4 V at I_C = 50 mA - Reduces power loss and self-heating in saturated switch operation.
AEC-Q101 qualified	NSV-prefix variant certified - Meets automotive reliability requirements for under-hood and infotainment subsystems.
Pb-free SOT-723	RoHS-compliant packaging - Supports lead-free reflow profiles and eliminates hazardous substance compliance risk.
ESD robustness	HBM 2000 V / MM 200 V - Allows direct handling and board-level integration without additional protection circuitry.

Applications

Audio Preamp Stage	Sensor Signal Amplification
Use Scenario: Low-noise voltage amplification of electret microphone output in portable voice recorders. IC Role / Device Role / Timing Role: NPN small-signal amplifier in common-emitter configuration with emitter degeneration. Use Value: High h_FE and low V_CE(sat) enable >30 dB gain with <1% THD at 1 kHz using single 3.3 V supply.	Use Scenario: Amplifying millivolt-level thermistor or bridge sensor outputs in HVAC control modules. IC Role / Device Role / Timing Role: Discrete transconductance stage converting resistance change to amplified voltage swing. Use Value: Stable h_FE over −40 °C to +125 °C ensures consistent gain calibration across operating temperature range.
Low-Power Switching	Automotive LED Driver
Use Scenario: Driving indicator LEDs or relay coils in battery-powered IoT edge nodes. IC Role / Device Role / Timing Role: Saturated switch controlling load current with minimal base drive overhead. Use Value: V_CE(sat) ≤ 0.4 V at I_C = 50 mA reduces power loss by >40% vs. standard general-purpose transistors.	Use Scenario: Constant-current LED biasing in automotive interior lighting with PWM dimming. IC Role / Device Role / Timing Role: Current-regulating pass element in linear LED driver topology. Use Value: AEC-Q101 qualification and 150 °C T_J rating support operation in enclosed lamp housings near heat sources.

Audio Preamp Stage

Sensor Signal Amplification

Use Scenario: Low-noise voltage amplification of electret microphone output in portable voice recorders.

IC Role / Device Role / Timing Role: NPN small-signal amplifier in common-emitter configuration with emitter degeneration.

Use Value: High h_FE and low V_CE(sat) enable >30 dB gain with <1% THD at 1 kHz using single 3.3 V supply.

Use Scenario: Amplifying millivolt-level thermistor or bridge sensor outputs in HVAC control modules.

IC Role / Device Role / Timing Role: Discrete transconductance stage converting resistance change to amplified voltage swing.

Use Value: Stable h_FE over −40 °C to +125 °C ensures consistent gain calibration across operating temperature range.

Low-Power Switching

Automotive LED Driver

Use Scenario: Driving indicator LEDs or relay coils in battery-powered IoT edge nodes.

IC Role / Device Role / Timing Role: Saturated switch controlling load current with minimal base drive overhead.

Use Value: V_CE(sat) ≤ 0.4 V at I_C = 50 mA reduces power loss by >40% vs. standard general-purpose transistors.

Use Scenario: Constant-current LED biasing in automotive interior lighting with PWM dimming.

IC Role / Device Role / Timing Role: Current-regulating pass element in linear LED driver topology.

Use Value: AEC-Q101 qualification and 150 °C T_J rating support operation in enclosed lamp housings near heat sources.

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN general-purpose amplifier applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
MMBT2222ALT1G	Lower h_FE (100–300), higher V_CE(sat) (0.6 V), same SOT-23 package	Less suitable for low-voltage gain-critical stages; better for digital switching where gain tolerance is relaxed	Select when cost sensitivity outweighs gain stability needs and board layout already accommodates SOT-23
BC846BPDW1T1G	Dual NPN in SOT-363; individual h_FE 200–450; lower f_T (100 MHz)	Enables dual-stage amplification or differential pair in same footprint; not drop-in for single-transistor designs	Choose for space-constrained dual-amplifier topologies requiring matched devices, not for single-device replacement

Compared with MMBT2222ALT1G and BC846BPDW1T1G, the 2SC5658M3T5G offers superior h_FE consistency and lower saturation voltage in a smaller SOT-723 footprint - making it optimal for miniaturized, gain-stable analog signal paths where thermal margin and ESD robustness are critical.

Availability

2SC5658M3T5G is available at Aetrix Electronics and suitable for audio preamplifier circuits, sensor interface modules, and automotive LED drivers requiring stable component supply and AEC-Q101-compliant sourcing.

Supply support for 2SC5658M3T5G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

onsemi is a global semiconductor supplier delivering energy-efficient, intelligent power and sensing solutions for automotive, industrial, cloud, medical, and IoT applications.

The 2SC5658M3T5G belongs to onsemi's general-purpose bipolar transistor product line, engineered for reliable, high-gain amplification and switching in space-constrained, thermally demanding environments.

FAQ

Is 2SC5658M3T5G still in active production?

No - per onsemi's January 2026 revision 7 datasheet, 2SC5658M3T5G is marked as discontinued. However, Aetrix Electronics maintains legacy inventory with full traceability and supports last-time-buy planning, extended lifecycle coordination, and cross-reference guidance for functional alternatives to the 2SC5658M3T5G.

What is the exact pin configuration of 2SC5658M3T5G?

The 2SC5658M3T5G uses SOT-723 package with pin 1 = Base, pin 2 = Emitter, pin 3 = Collector - confirmed by onsemi's marking diagram and mechanical outline CASE 631AA. This differs from SOT-23 and SOT-323 pinouts, so PCB layout must follow the 2SC5658M3T5G-specific footprint.

Does 2SC5658M3T5G meet automotive qualification standards?

Yes - the NSV2SC5658M3T5G variant is explicitly AEC-Q101 qualified and PPAP capable. While the base 2SC5658M3T5G shares identical die and package, the NSV prefix denotes automotive-grade screening and control; both variants use the same silicon and SOT-723 construction.

What is the maximum operating temperature for 2SC5658M3T5G?

The 2SC5658M3T5G has a maximum junction temperature (T_J) of 150 °C and storage temperature range of −55 °C to +150 °C. Derating is required above 25 °C ambient per the thermal characteristics table; at 100 °C case temperature, maximum allowable power dissipation drops to ~130 mW.

Can 2SC5658M3T5G replace BC847 in existing designs?

No - although both are NPN transistors, the 2SC5658M3T5G uses SOT-723 (1.20 × 0.80 mm), while BC847 typically uses SOT-23 (3.0 × 1.4 mm). Pinout differs (SOT-723: B-E-C vs. SOT-23: E-B-C), and h_FE ranges are not aligned. Direct substitution would require PCB redesign and validation of bias stability for the 2SC5658M3T5G.

2SC5658M3T5G Specifications

Product attributes: Attribute value

Manufacturer:: onsemi

Series:: -

Package/Case:: SOT-723

Packaging:: Tape & Reel (TR)

Product Status:: Active

Transistor Type:: NPN

Current - Collector (Ic) (Max):: 100 mA

Voltage - Collector Emitter Breakdown (Max):: 50 V

Vce Saturation (Max) @ Ib, Ic:: 400mV @ 5mA, 60mA

Current - Collector Cutoff (Max):: 500nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce:: 120 @ 1mA, 6V

Power - Max:: 260 mW

Frequency - Transition:: 180MHz

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: SOT-723

2SC5658M3T5G FAQ

1.How can I place an order for 2SC5658M3T5G through Aetrix?

Please submit a Request for Quotation (RFQ) for 2SC5658M3T5G on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 2SC5658M3T5G reliable?

The price and inventory of 2SC5658M3T5G are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 2SC5658M3T5G is usually 5 days.

3.What payment methods are accepted for 2SC5658M3T5G?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 2SC5658M3T5G transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for 2SC5658M3T5G?

2SC5658M3T5G orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 2SC5658M3T5G order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 2SC5658M3T5G?

For technical support, including 2SC5658M3T5G datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 2SC5658M3T5G requirements.

6.How does Aetrix verify that 2SC5658M3T5G is sourced from the original manufacturer or authorized distributors?

All 2SC5658M3T5G products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 2SC5658M3T5G meets industry standards.

7.What is the process for return or replacement of 2SC5658M3T5G?

All 2SC5658M3T5G units undergo pre-shipment inspection (PSI). If there is an issue with 2SC5658M3T5G, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 2SC5658M3T5G part is unused and in its original packaging.

Return procedure for 2SC5658M3T5G:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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