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Toshiba Semiconductor and Storage 2SC5714(TE12L,ZF)
- Part No.:
- 2SC5714(TE12L,ZF)
- Manufacturer:
- Toshiba Semiconductor and Storage
- Category:
- Single Bipolar Transistors
- Package:
- TO-243AA
- Datasheet:
-
2SC5714(TE12L,ZF).pdf
- Description:
- TRANS NPN 20V 4A PW-MINI
- Quantity:
- Payment:
- Shipping:
Inventory:4,811
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Product details
Overview
2SC5714(TE12L,ZF) from Toshiba is a silicon NPN epitaxial transistor designed for high-speed switching in DC-DC converters and strobe circuits, featuring hFE = 400–1000 at IC = 0.5 A, VCE(sat) ≤ 0.15 V at IC = 1.6 A/IB = 32 mA, and tf = 90 ns (typ.), enabling efficient low-loss power control in compact pulse-driven systems.
For engineers reviewing the 2SC5714(TE12L,ZF) datasheet, 2SC5714(TE12L,ZF) pinout, 2SC5714(TE12L,ZF) application, or 2SC5714(TE12L,ZF) equivalent, key selection criteria include guaranteed DC current gain range, low saturation voltage under pulsed high-current conditions, JEITA SC-62 package thermal performance on FR4, and validated switching speed with defined test circuit (VCC ≈ 12 V, RL = 7.5 Ω).
Technical Context
This NPN bipolar junction transistor operates in common-emitter configuration with specified gain linearity across IC = 0.001–10 A and temperature range −55°C to +100°C. Its safe operating area (SOA) is defined for single nonrepetitive pulses up to 10 s on FR4 (1.6 mm, 645 mm² Cu), with DC power dissipation limited to 1.0 W and pulsed IC up to 7 A.
Switching behavior is characterized using standardized test conditions: IB1 = IB2 = 53.3 mA, duty cycle < 1%, and transient thermal resistance rth(tw) curves provided for pulse widths from 10 μs to 10 s. V(BR)CEO = 20 V ensures robustness against inductive kickback in flyback and boost topologies.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| hFE (DC current gain) | 400–1000 at VCE = 2 V, IC = 0.5 A - enables stable base drive design for predictable collector current control |
| VCE(sat) (max) | 0.15 V at IC = 1.6 A, IB = 32 mA - minimizes conduction loss in high-duty-cycle switching applications |
| tf (fall time) | 90 ns (typ.) - supports >1 MHz switching in DC-DC converters without excessive switching loss |
| VCEO (collector-emitter breakdown) | 20 V - defines maximum sustainable voltage during off-state in low-voltage power stages |
| PC (DC power dissipation) | 1.0 W on FR4 board (1.6 mm, 645 mm² Cu) - sets thermal derating baseline for continuous operation |
| Cob (output capacitance) | 18 pF at VCB = 10 V, f = 1 MHz - influences high-frequency turn-off delay and EMI generation |
Pinout & Package
Package: JEITA SC-62 (Toshiba designation: 2-5K1A), surface-mount, 3-pin, plastic molded case with 0.05 g typical mass. Mounting requires FR4 board (1.6 mm thick, 645 mm² copper area) for rated thermal performance.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Emitter (E) | Current sink terminal | Low-impedance return path; connects to ground or low-side reference in switch configurations |
| Base (B) | Control input | Receives current-limited drive signal; requires IB ≥ 32 mA for full saturation at IC = 1.6 A |
| Collector (C) | Current source terminal | Connects to load or inductor; withstands up to 20 V VCEO and 7 A pulsed current |
Key Features
| Feature | Design Value |
|---|---|
| High DC current gain range | hFE = 400–1000 ensures consistent switching behavior across production lots without recalibration |
| Low VCE(sat) | ≤0.15 V at rated current reduces I²R losses and thermal stress in high-efficiency DC-DC stages |
| Fast fall time | 90 ns typ. enables clean edge transitions critical for timing-critical strobe and PWM circuits |
| Defined SOA for pulsed operation | Validated up to 7 A/100 μs and 4 A/1 ms pulses supports robust overcurrent handling in transient events |
Applications
| DC-DC Converter Power Switch | Camera Strobe Driver |
|---|---|
Use Scenario: Used as main switching transistor in non-isolated buck or boost converters delivering 1–5 A output at 5–24 V input. IC Role / Device Role / Timing Role: NPN power switch controlled by PWM signal; turns on/off inductor current path at 100 kHz–2 MHz. Use Value: Low VCE(sat) and fast tf minimize total switching + conduction loss, improving efficiency above 85% at 2 A load. | Use Scenario: Drives xenon flash tube or high-intensity LED array requiring short, high-current pulses (1–10 A, 10–100 μs). IC Role / Device Role / Timing Role: High-current saturated switch triggered by microcontroller GPIO; handles repetitive 100 Hz strobes. Use Value: Guaranteed hFE ≥ 400 ensures reliable turn-on with modest base drive; SOA supports 7 A pulses without secondary breakdown. |
| High-Speed Logic Interface | Industrial Sensor Signal Amplifier |
Use Scenario: Level-shifting and current amplification between 3.3 V logic and 12 V actuator control lines. IC Role / Device Role / Timing Role: Common-emitter amplifier with fixed bias; provides inverted, amplified digital output. Use Value: 90 ns tf and 100 ns tr support clean 5 MHz digital signal transmission without edge degradation. | Use Scenario: Amplifying low-level analog signals (e.g., thermistor or bridge sensor outputs) before ADC sampling. IC Role / Device Role / Timing Role: Linear-mode small-signal amplifier biased in active region; configured for fixed-gain CE topology. Use Value: hFE stability across −55°C to +100°C maintains gain accuracy in unregulated industrial enclosures. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar NPN switching transistor applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| 2SC5707(TE12L,F) | Lower hFE (200–600), same SC-62 package, VCEO = 20 V, VCE(sat) = 0.18 V (max) | Suitable for lower-gain-tolerance designs; slightly higher conduction loss | Select when cost sensitivity outweighs need for tight hFE distribution |
| MJD127G | TO-252 package, VCEO = 100 V, hFE = 30–240, VCE(sat) = 1.5 V (max) at IC = 2 A | Better voltage margin but slower (tf = 1.5 μs) and higher saturation loss | Choose only if system requires >30 V blocking capability and can accept reduced efficiency |
Compared with 2SC5714(TE12L,ZF), the 2SC5707 offers cost-effective substitution with relaxed gain spec, while MJD127G trades speed and efficiency for higher voltage rating-neither is pin-compatible, and layout adaptation is required for either alternative.
Availability
2SC5714(TE12L,ZF) is available at Aetrix Electronics and suitable for DC-DC converter power switches, camera strobe drivers, high-speed logic interfaces, and industrial sensor signal amplifiers requiring stable component supply and traceable RoHS-compliant sourcing.
Supply support for 2SC5714(TE12L,ZF) includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Toshiba Electronic Devices & Storage Corporation is a Japanese semiconductor manufacturer specializing in discrete devices, power ICs, and memory solutions, with global manufacturing and quality certification to ISO 9001 and IATF 16949.
The 2SC5714 belongs to Toshiba's general-purpose bipolar transistor product line, engineered for high-reliability switching in consumer, industrial, and lighting applications where predictable gain, low saturation voltage, and repeatable pulse performance are essential.
FAQ
What is the maximum continuous collector current for 2SC5714(TE12L,ZF) under standard mounting conditions?
The 2SC5714(TE12L,ZF) supports a maximum continuous collector current of 4 A when mounted on an FR4 board (1.6 mm thick, 645 mm² copper area) at Ta = 25°C. This rating assumes proper thermal management and adherence to the derating curve shown in the Safe Operating Area chart; exceeding 4 A continuously risks thermal runaway due to its 1.0 W DC power dissipation limit.
Does 2SC5714(TE12L,ZF) meet RoHS requirements?
Yes, the 2SC5714(TE12L,ZF) is RoHS compliant. The marking "[[G]]/RoHS COMPATIBLE" or "[[G]]/RoHS [[Pb]]" appears beside the lot number on the device body, confirming compliance with Directive 2011/65/EU. Full environmental documentation, including substance declarations, is available through Toshiba's official support channels for the 2SC5714(TE12L,ZF).
What is the recommended base drive current to fully saturate 2SC5714(TE12L,ZF) at IC = 1.6 A?
To ensure full saturation of the 2SC5714(TE12L,ZF) at IC = 1.6 A, Toshiba specifies IB = 32 mA. This corresponds to an overdrive ratio (IC/IB) of 50, which guarantees VCE(sat) ≤ 0.15 V. Driving with less than 32 mA may result in elevated VCE(sat) and increased power dissipation, especially under temperature extremes.
Can 2SC5714(TE12L,ZF) be used in linear amplifier applications?
Yes, the 2SC5714(TE12L,ZF) can operate in linear mode, as confirmed by hFE vs. IC curves across IC = 0.001–10 A and temperature ranges. However, its SOA is optimized for switching, not sustained linear operation; continuous use above 1 W dissipation or outside the defined SOA boundaries risks thermal instability. For dedicated amplification, Toshiba's 2SC4738 or similar linear-grade transistors are preferred.
What is the thermal resistance (junction-to-ambient) for 2SC5714(TE12L,ZF) on FR4?
The 2SC5714(TE12L,ZF) has a transient thermal resistance rth(tw) of approximately 125°C/W at tw = 10 ms when mounted on an FR4 board (1.6 mm, 645 mm² Cu). At DC, the effective junction-to-ambient thermal resistance is ~150°C/W, derived from PC = 1.0 W and ΔTj-a = 150°C (Tj max − Ta). These values assume no added heatsinking and must be derated above 25°C ambient.
2SC5714(TE12L,ZF) Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Toshiba Semiconductor and Storage
- Series:
- -
- Package/Case:
- TO-243AA
- Packaging:
- Box
- Product Status:
- Active
- Transistor Type:
- NPN
- Current - Collector (Ic) (Max):
- 4 A
- Voltage - Collector Emitter Breakdown (Max):
- 20 V
- Vce Saturation (Max) @ Ib, Ic:
- 150mV @ 32mA, 1.6A
- Current - Collector Cutoff (Max):
- 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce:
- 400 @ 500mA, 2V
- Power - Max:
- 1 W
- Frequency - Transition:
- -
- Operating Temperature:
- 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PW-MINI
2SC5714(TE12L,ZF) FAQ
1.How can I place an order for 2SC5714(TE12L,ZF) through Aetrix?
Please submit a Request for Quotation (RFQ) for 2SC5714(TE12L,ZF) on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 2SC5714(TE12L,ZF) reliable?
The price and inventory of 2SC5714(TE12L,ZF) are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 2SC5714(TE12L,ZF) is usually 5 days.
3.What payment methods are accepted for 2SC5714(TE12L,ZF)?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 2SC5714(TE12L,ZF) transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 2SC5714(TE12L,ZF)?
2SC5714(TE12L,ZF) orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 2SC5714(TE12L,ZF) order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 2SC5714(TE12L,ZF)?
For technical support, including 2SC5714(TE12L,ZF) datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 2SC5714(TE12L,ZF) requirements.
6.How does Aetrix verify that 2SC5714(TE12L,ZF) is sourced from the original manufacturer or authorized distributors?
All 2SC5714(TE12L,ZF) products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 2SC5714(TE12L,ZF) meets industry standards.
7.What is the process for return or replacement of 2SC5714(TE12L,ZF)?
All 2SC5714(TE12L,ZF) units undergo pre-shipment inspection (PSI). If there is an issue with 2SC5714(TE12L,ZF), returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 2SC5714(TE12L,ZF) part is unused and in its original packaging.
Return procedure for 2SC5714(TE12L,ZF):
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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