Toshiba Semiconductor and Storage 2SC5886A,L1XHQ(O

Overview

2SC5886A,L1XHQ(O) from TOSHIBA is a silicon NPN epitaxial transistor designed for high-speed switching and DC/DC converter applications. It delivers hFE = 400–1000 at IC = 0.5 A, VCE(sat) ≤ 0.22 V at IC = 1.6 A/IB = 32 mA, and tf = 95 ns (typ.), enabling efficient power control in compact switch-mode power supplies.

For engineers reviewing the 2SC5886A,L1XHQ(O) datasheet, 2SC5886A,L1XHQ(O) pinout, 2SC5886A,L1XHQ(O) application, or 2SC5886A,L1XHQ(O) equivalent, key selection criteria include its 50 V VCEO rating, 5 A continuous collector current, low saturation voltage, high DC current gain, and suitability for pulse-driven switching circuits with tight timing constraints.

Technical Context

This NPN bipolar junction transistor operates in common-emitter configuration with fixed-base drive requirements. Its design emphasizes fast turn-off (tf = 95 ns typ.) and low conduction loss (VCE(sat) ≤ 0.22 V), achieved through epitaxial base construction and optimized doping profiles.

It supports pulsed operation up to ICP = 10 A with derated safe operating area (SOA) limits, and exhibits stable hFE across IC = 0.5–1.6 A at VCE = 2 V. Thermal resistance rth(j−c) is specified for transient pulse conditions, requiring heatsink-aware layout for sustained 20 W dissipation.

Key Specifications

Pinout & Package

Package: TO-220AB (TOSHIBA designation 2-7J1A), 3-pin through-hole, 0.36 g typical weight, JEDEC-compliant outline.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN switching transistor applications.

Compared with 2SC5886A,L1XHQ(O), the 2SC5886 lacks guaranteed RoHS traceability, while MJD127G trades lower saturation loss and tighter gain control for higher voltage capability and surface-mount compatibility-making the original optimal for RoHS-compliant, thermally constrained, medium-voltage switching designs.

Availability

2SC5886A,L1XHQ(O) is available at Aetrix Electronics and suitable for DC/DC converters, relay drivers, and LED current regulators requiring stable component supply, long-term lifecycle support, and RoHS-compliant manufacturing traceability.

Supply support for 2SC5886A,L1XHQ(O) includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Toshiba Electronic Devices & Storage Corporation is a Japanese semiconductor manufacturer specializing in power devices, logic ICs, and memory solutions with global distribution and automotive-grade qualification capabilities.

The 2SC5886A belongs to Toshiba's legacy high-reliability discrete transistor product line, engineered specifically for industrial power conversion and electromechanical interface applications demanding consistent gain, low saturation, and rugged SOA performance.

FAQ

What is the maximum continuous collector current rating for the 2SC5886A,L1XHQ(O)?

The 2SC5886A,L1XHQ(O) has a maximum continuous collector current (IC) rating of 5 A at Ta = 25°C. This value assumes adequate heatsinking and PCB copper area to maintain case temperature within limits. At elevated temperatures or without forced cooling, derating per the SOA curve is required-e.g., ~3.5 A at Tc = 100°C. The 2SC5886A,L1XHQ(O) also supports 10 A pulsed current for short durations under defined test conditions.

Does the 2SC5886A,L1XHQ(O) meet RoHS requirements?

Yes, the 2SC5886A,L1XHQ(O) is RoHS compliant, indicated by the underlined Lot No. on the device marking per Toshiba's labeling convention ([[G]]/RoHS COMPATIBLE). This version is explicitly designated for environmentally regulated markets and carries documented lead-free plating and halogen-free packaging. The 2SC5886A,L1XHQ(O) meets Directive 2011/65/EU requirements without exemptions.

What is the typical fall time (tf) of the 2SC5886A,L1XHQ(O), and under what test conditions is it measured?

The typical fall time (tf) of the 2SC5886A,L1XHQ(O) is 95 ns, measured using Toshiba's standard switching time test circuit: VCC = −24 V, RL = 15 Ω, IB1 = 32 mA, IB2 = −53 mA, with duty cycle < 1%. This value reflects turn-off performance under realistic pulsed drive conditions and serves as a key benchmark for high-frequency switching feasibility in DC/DC designs using the 2SC5886A,L1XHQ(O).

Can the 2SC5886A,L1XHQ(O) be used in linear regulator applications?

Yes, the 2SC5886A,L1XHQ(O) can operate in linear mode as a series pass transistor, leveraging its high hFE and low VCE(sat) to minimize dropout and improve regulation accuracy. However, power dissipation must remain within the 20 W Pc rating and SOA limits-e.g., at 2 A and 5 V drop, junction temperature rise must be managed via heatsink design. The 2SC5886A,L1XHQ(O) is not optimized for ultra-low noise or precision VBE tracking.

What package type does the 2SC5886A,L1XHQ(O) use, and is the metal tab electrically connected?

The 2SC5886A,L1XHQ(O) uses the TO-220AB package (TOSHIBA designation 2-7J1A), with the metal tab internally connected to the collector terminal. This configuration provides both thermal conduction to heatsinks and electrical connection to the collector node-requiring insulating hardware if mounting to grounded heatsinks. The 2SC5886A,L1XHQ(O) weighs 0.36 g and complies with JEDEC outline standards.