Toshiba Semiconductor and Storage 2SC5886A(T6L1,NQ)

Overview

2SC5886A(T6L1,NQ) from Toshiba is a silicon NPN epitaxial transistor designed for high-speed switching and DC/DC converter applications. It delivers DC current gain (hFE) of 400–1000 at IC = 0.5 A, VCE(sat) ≤ 0.22 V at IC = 1.6 A/IB = 32 mA, and typ. fall time tf = 95 ns - enabling efficient power control in compact switch-mode power supplies.

For engineers reviewing the 2SC5886A(T6L1,NQ) datasheet, 2SC5886A(T6L1,NQ) pinout, 2SC5886A(T6L1,NQ) application, or 2SC5886A(T6L1,NQ) equivalent, key selection criteria include saturation voltage performance under pulsed 1.6 A loads, safe operating area at Tc = 100°C, thermal resistance rth(j−c), and RoHS-compliant marking interpretation per Toshiba's lot-code convention.

Technical Context

This transistor operates in common-emitter configuration with specified pulse-test conditions across all dynamic and DC parameters. Its design supports fast turn-off via active base drive reversal (IB1 = 32 mA / IB2 = −53 mA), verified by the standardized switching-time test circuit in Figure 1.

The device features a maximum VCEO of 50 V and VCBO of 120 V, enabling use in intermediate-voltage DC/DC stages. Thermal derating is required above 25°C case temperature, with junction temperature limited to 150°C and storage range spanning −55 to 150°C.

Key Specifications

Pinout & Package

Package: TO-220AB (TOSHIBA designation 2-7J1A), 3-pin through-hole, 0.36 g typical weight, JEDEC-compatible outline.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN power switching applications.

Compared with 2SC5886A(T6L1,NQ), the 2SC5884A offers cost-reduced gain performance in identical footprint, while MJD127G trades gain for higher voltage rating and built-in collector isolation - making each viable only where their specific parameter trade-offs align with system-level thermal, drive, and safety constraints.

Availability

2SC5886A(T6L1,NQ) is available at Aetrix Electronics and suitable for industrial power supplies, DC/DC converter modules, and motor drive gate drivers requiring stable component supply and long-term obsolescence management.

Supply support for 2SC5886A(T6L1,NQ) includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Toshiba Electronic Devices & Storage Corporation designs and manufactures discrete semiconductors, power devices, and logic ICs with emphasis on reliability, thermal performance, and industrial-grade qualification.

The 2SC5886A(T6L1,NQ) belongs to Toshiba's high-speed bipolar power transistor family, engineered specifically for efficiency-critical switching applications in power conversion systems operating up to 100 kHz.

FAQ

What is the maximum continuous collector current rating for 2SC5886A(T6L1,NQ) at 25°C case temperature?

The 2SC5886A(T6L1,NQ) has a DC collector current rating (IC) of 5 A at Tc = 25°C, as specified in the Absolute Maximum Ratings table. This value assumes adequate heatsinking and derating applies above 25°C - for example, at Tc = 100°C, the usable continuous IC drops to approximately 2.5 A per the SOA curve in Figure 4. Always verify thermal design margins using the published rth(j−c) data for your mechanical layout.

Does 2SC5886A(T6L1,NQ) support RoHS compliance, and how is it indicated on the device marking?

Yes, 2SC5886A(T6L1,NQ) is RoHS compliant when marked with an underlined lot number and "[[G]]" prefix per Toshiba's labeling convention. Non-underlined lot numbers indicate lead-containing versions. The part meets Directive 2011/65/EU requirements, and full environmental documentation is available from Toshiba sales representatives - no reflow or assembly process changes are needed for RoHS-compliant variants of 2SC5886A(T6L1,NQ).

Can 2SC5886A(T6L1,NQ) be used in linear amplifier applications, or is it optimized solely for switching?

The 2SC5886A(T6L1,NQ) is characterized and qualified for high-speed switching, with SOA curves and switching-time data provided explicitly for pulsed operation. While its hFE and VBE(sat) support limited linear biasing, Toshiba does not specify linearity, distortion, or small-signal parameters - so 2SC5886A(T6L1,NQ) should not be used in audio or precision analog amplifiers. Its design intent remains discrete power switching.

What is the recommended base drive configuration to achieve guaranteed VCE(sat) ≤ 0.22 V in 2SC5886A(T6L1,NQ)?

To guarantee VCE(sat) ≤ 0.22 V, the 2SC5886A(T6L1,NQ) must be driven with IB = 32 mA while sinking IC = 1.6 A, as tested per the Electrical Characteristics table. A current-source base driver or resistor-limited TTL/CMOS stage delivering ≥32 mA peak into ~35 Ω effective base impedance (VBE(sat) ≈ 1.1 V) meets this requirement. Avoid voltage-driven bases without current limiting, as excessive IB can cause localized heating and premature failure.

How does the safe operating area (SOA) of 2SC5886A(T6L1,NQ) scale with case temperature in continuous operation?

The SOA curve in Figure 4 applies only to single nonrepetitive pulses at Tc = 25°C. For continuous DC operation, derating is linear: maximum IC decreases from 5 A at 25°C to zero at 150°C junction temperature. Since rth(j−c) is not numerically specified but graphed, designers must use the transient thermal resistance plot (Fig. 4, lower right) to estimate junction temperature rise during pulse trains - continuous use beyond 1 A at Tc > 85°C risks exceeding Tj = 150°C in 2SC5886A(T6L1,NQ).