onsemi 2SC5888

Overview

2SC5888 from SANYO Semiconductor is an NPN epitaxial planar silicon transistor designed for high-current switching applications, featuring V_CEO = 50 V, I_C = 10 A continuous, V_CE(sat) = 180–360 mV at I_C = 5 A / I_B = 250 mA, f_T = 130–200 MHz, and TO-220ML package. It serves as a robust power switch in relay, lamp, and motor driver circuits.

For engineers reviewing the 2SC5888 datasheet, pinout, applications, or equivalent options, key selection considerations include its low saturation voltage, high-speed switching (t_on = 40 ns typ, t_f = 60–80 ns), MBIT process-enhanced current handling, and thermal performance up to T_j = 150°C.

Technical Context

The 2SC5888 employs SANYO's MBIT (Mesa Bipolar Integrated Technology) process to achieve high current gain (h_FE = 200–700 at I_C = 1 A) and low V_CE(sat) under heavy conduction. Its f_T bandwidth supports fast switching in DC-DC converters and PWM-driven loads.

Thermal design is enabled by its TO-220ML package with 25 W collector dissipation at T_c = 25°C and derating to 2 W at T_a = 25°C without heatsink. The device operates across –25°C to +75°C ambient with stable h_FE and V_CE(sat) characteristics.

Key Specifications

Pinout & Package

2SC5888 is housed in a TO-220ML (SANYO designation) package - a modified TO-220 with extended metal tab for improved thermal conduction and mechanical stability. The package features three leads mounted on a single plane with insulated backside mounting surface.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current NPN switching applications.

Compared with 2SC5200 and MJD122, the 2SC5888 delivers optimal balance of low V_CE(sat), high f_T, and TO-220ML thermal robustness - making it the preferred choice for industrial relay/motor drivers operating at 24–48 V with PWM frequencies above 10 kHz.

Availability

2SC5888 is available at Aetrix Electronics and suitable for relay drivers, lamp drivers, and motor drivers requiring stable component supply, long-term industrial lifecycle support, and traceable sourcing from original SANYO production lots.

Supply support for 2SC5888 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

SANYO Semiconductor Co., Ltd. was a Japanese semiconductor manufacturer specializing in analog, power, and discrete devices before its acquisition by ON Semiconductor in 2011. Known for high-reliability bipolar transistors and power ICs.

The 2SC5888 belongs to SANYO's high-current switching transistor family developed for industrial control systems, emphasizing low-loss conduction, fast switching, and rugged thermal packaging for demanding relay and motor drive applications.

FAQ

What is the maximum continuous collector current rating for the 2SC5888?

The 2SC5888 has a maximum continuous collector current (I_C) rating of 10 A at T_c = 25°C. This rating assumes proper heatsinking; derating applies above case temperatures of 25°C per the PC–Tc curve in the datasheet. At ambient conditions without heatsink, the usable I_C drops significantly due to its 2 W P_C limit at T_a = 25°C. Always verify thermal design using the 2SC5888's published derating curves.

Does the 2SC5888 have a built-in base-emitter resistor or diode?

No, the 2SC5888 is a standard three-terminal NPN bipolar junction transistor with no integrated base-emitter resistors or clamp diodes. It requires external base drive circuitry - including current-limiting resistors and optional Baker clamp or flyback diodes - to ensure safe switching and prevent saturation-related delays. This discrete architecture provides full design flexibility for optimizing drive strength and switching behavior in the 2SC5888 application.

What is the typical gain-bandwidth product (f_T) of the 2SC5888 and how does it affect switching performance?

The 2SC5888 has a typical f_T of 200 MHz (range 130–200 MHz) at V_CE = 5 V and I_C = 1 A. This high f_T directly enables fast switching transitions - evidenced by t_on = 40 ns and t_f = 60–80 ns - making the 2SC5888 suitable for PWM frequencies up to several hundred kHz. In practice, this allows cleaner edges and reduced switching losses compared to lower-f_T transistors like the MJD122 in the 2SC5888 application space.

Can the 2SC5888 replace the 2SC5886 in existing designs?

The 2SC5888 and 2SC5886 share the same TO-220ML package and pinout, but differ in key parameters: the 2SC5888 has V_CEO = 50 V and I_C = 10 A, while the 2SC5886 specifies V_CEO = 40 V and I_C = 8 A. Substitution is possible only if the 2SC5888's higher voltage/current ratings meet or exceed the original design's stress margins. Thermal and drive requirements remain compatible, but layout verification is recommended before drop-in replacement of the 2SC5888.

What is the safe operating area (SOA) limitation for the 2SC5888 at DC operation?

The 2SC5888's DC SOA is defined by its maximum collector dissipation (P_C = 25 W at T_c = 25°C) and secondary breakdown limits. At V_CE = 20 V, the maximum sustainable I_C is approximately 1.25 A under DC conditions without forced cooling - derived from P_C = V_CE × I_C. For higher currents, pulsed operation (e.g., I_CP = 13 A at ≤10 μs) or active heatsinking is required. Always consult the 2SC5888's SOA graph in the datasheet for voltage–current boundary validation.