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Home > Products > Discrete Semiconductor Products > Transistors > Bipolar (BJT) > Single Bipolar Transistors

onsemi 2SC6082-EPN-1E

Name: 2SC6082-EPN-1E
Brand: onsemi
SKU: 2SC6082-EPN-1E
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: 2SC6082-EPN-1E

Manufacturer:: onsemi

Category:: Single Bipolar Transistors

Package:: TO-220-3 Full Pack

Datasheet:: 2SC6082-EPN-1E.pdf

Description:: TRANS NPN 50V 15A TO-220F-3SG

Quantity:: RFQ Add To RFQ list

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Product details

Overview

2SC6082-EPN-1E from onsemi is a low-saturation-voltage NPN bipolar power transistor in TO-220F-3SG package, rated for 50 V V_CEO, 15 A I_C, and 23 W P_C at T_c=25°C, with V_CE(sat) = 400 mV at I_C=7.5 A/I_B=375 mA. It delivers high-speed switching (t_on=52 ns, t_f=37 ns) and is optimized for switching regulators and driver circuits.

For engineers reviewing the 2SC6082-EPN-1E datasheet, pinout, applications, or equivalent options, key selection criteria include verified V_CE(sat) ≤400 mV at high current, f_T = 195 MHz gain-bandwidth, h_FE ≥50 at I_C=10 A, TO-220F-3SG thermal performance, and JEITA SC-67 compliance.

Technical Context

This device uses onsemi's MBIT process to achieve low saturation voltage and high current handling. Its structure supports fast turn-on/turn-off with minimal storage time (t_stg = 560 ns), enabling efficient operation in hard-switched DC-DC converters.

The TO-220F-3SG package features insulated tab and surface-mount-compatible footprint, with validated thermal resistance (R_θJC implied by 23 W P_C at T_c=25°C). Electrical connection is fixed: Pin 1 = Base, Pin 2 = Collector, Pin 3 = Emitter.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CEO	50 V - Maximum safe collector-emitter voltage under open-base condition; defines breakdown margin in switching applications.
I_C	15 A continuous - Sustained current-handling capability at T_c=25°C; enables high-power driver stages.
V_CE(sat)	400 mV max at I_C=7.5 A/I_B=375 mA - Low conduction loss critical for efficiency in PWM switch nodes.
f_T	195 MHz - Enables stable high-frequency switching up to ~1–2 MHz with adequate gain margin.
h_FE	50 min at I_C=10 A/V_CE=2 V - Ensures sufficient DC gain for base drive design at full load.
t_on/t_f	52 ns / 37 ns - Fast edge rates reduce switching losses in hard-switched topologies.
P_C @ T_c=25°C	23 W - Thermal limit defined at case temperature; requires heatsink for sustained 15 A operation.

Pinout & Package

Package: TO-220F-3SG (JEITA SC-67), insulated tab, vertical mounting, 1.8 g mass. Dimensions: 15.87 mm × 10.16 mm × 4.7 mm (L×W×H), lead pitch 2.54 mm.

Pin/Terminal	Circuit Role	Design Meaning
1	Base	Control input requiring ~375 mA drive for full 7.5 A collector current; low V_BE(sat) = 1.2 V reduces base drive power.
2	Collector	Main high-current output terminal; electrically connected to insulated metal tab for thermal path to heatsink.
3	Emitter	Power return node; referenced to ground in common-emitter configurations; carries full load current.

Key Features

Feature	Design Value
MBIT process technology	Enables simultaneous optimization of V_CE(sat), f_T, and ruggedness without trade-off penalties.
Low V_CE(sat)	400 mV max at 7.5 A ensures <1.5 W conduction loss per device in 12 V/10 A switch node.
High f_T	195 MHz supports stable gain at 1–2 MHz switching frequencies used in modern compact SMPS designs.
Fast switching	52 ns t_on + 37 ns t_f minimizes transition losses in hard-switched topologies operating at ≥500 kHz.
TO-220F-3SG insulation	Electrically isolated tab eliminates need for insulating washers in heatsink mounting, reducing thermal resistance.

Applications

Switching Regulator Power Stage	Motor Driver Half-Bridge
Use Scenario: Primary-side switch in 20–50 W offline flyback or forward converter operating at 65–130 kHz. IC Role / Device Role / Timing Role: High-current NPN switch controlling energy transfer via transformer primary winding. Use Value: Low V_CE(sat) and fast t_f reduce total switching + conduction losses, improving efficiency >88% at full load.	Use Scenario: High-side switch in 24 V brushed DC motor driver delivering up to 10 A peak current. IC Role / Device Role / Timing Role: Current-controlled power switch in discrete half-bridge configuration with external bootstrap gate drive. Use Value: 15 A I_C rating and 50 V V_CEO provide margin for inductive kickback; TO-220F-3SG enables direct heatsink mounting.
DC-DC Converter Synchronous Rectifier Driver	Industrial Solenoid/Valve Driver
Use Scenario: NPN driver stage controlling gate of synchronous rectifier MOSFET in 12 V → 3.3 V buck converter. IC Role / Device Role / Timing Role: Fast-turn-on emitter-follower buffer amplifying PWM signal to MOSFET gate. Use Value: 195 MHz f_T and 52 ns t_on ensure accurate gate drive timing alignment with controller, minimizing shoot-through risk.	Use Scenario: On/off control of 24 V/5 A industrial solenoid with 100 ms duty cycle in PLC I/O module. IC Role / Device Role / Timing Role: Robust discrete switch interfacing microcontroller GPIO to inductive load. Use Value: 60 V V_CBO and 150 °C T_j rating ensure reliability under repetitive inductive voltage spikes and ambient temperatures up to 85 °C.

Switching Regulator Power Stage

Motor Driver Half-Bridge

Use Scenario: Primary-side switch in 20–50 W offline flyback or forward converter operating at 65–130 kHz.

IC Role / Device Role / Timing Role: High-current NPN switch controlling energy transfer via transformer primary winding.

Use Value: Low V_CE(sat) and fast t_f reduce total switching + conduction losses, improving efficiency >88% at full load.

Use Scenario: High-side switch in 24 V brushed DC motor driver delivering up to 10 A peak current.

IC Role / Device Role / Timing Role: Current-controlled power switch in discrete half-bridge configuration with external bootstrap gate drive.

Use Value: 15 A I_C rating and 50 V V_CEO provide margin for inductive kickback; TO-220F-3SG enables direct heatsink mounting.

DC-DC Converter Synchronous Rectifier Driver

Industrial Solenoid/Valve Driver

Use Scenario: NPN driver stage controlling gate of synchronous rectifier MOSFET in 12 V → 3.3 V buck converter.

IC Role / Device Role / Timing Role: Fast-turn-on emitter-follower buffer amplifying PWM signal to MOSFET gate.

Use Value: 195 MHz f_T and 52 ns t_on ensure accurate gate drive timing alignment with controller, minimizing shoot-through risk.

Use Scenario: On/off control of 24 V/5 A industrial solenoid with 100 ms duty cycle in PLC I/O module.

IC Role / Device Role / Timing Role: Robust discrete switch interfacing microcontroller GPIO to inductive load.

Use Value: 60 V V_CBO and 150 °C T_j rating ensure reliability under repetitive inductive voltage spikes and ambient temperatures up to 85 °C.

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN power transistor applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
2SC6082-1E	Same die, identical specs; differs only in marking and packaging (magazine vs. tape/reel).	No functional difference; both rated for same V_CEO, I_C, V_CE(sat), and f_T.	Select based on logistics: -1E for magazine-packed volume orders; -EPN-1E for traceable batch-lot delivery.
MJD127G	Lower I_C (10 A), higher V_CE(sat) (600 mV typ), TO-252 package; no insulated tab.	Suitable for lower-power (<15 W) surface-mount designs where heatsinking is less demanding.	Choose MJD127G only if board space constraints prohibit TO-220F-3SG and thermal load is ≤8 A continuous.

Compared with 2SC6082-1E and MJD127G, the 2SC6082-EPN-1E provides superior thermal management via insulated TO-220F-3SG and higher current capability, making it optimal for 15 A hard-switched applications where layout allows through-hole mounting and heatsinking.

Availability

2SC6082-EPN-1E is available at Aetrix Electronics and suitable for switching regulators, motor drivers, and industrial solenoid control requiring stable component supply and traceable lot-level documentation.

Supply support for 2SC6082-EPN-1E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

onsemi (formerly ON Semiconductor) is a global semiconductor supplier focused on energy-efficient electronics, with leadership in power management, analog, sensors, and logic.

The 2SC6082 series belongs to onsemi's high-reliability bipolar power transistor product line, engineered specifically for high-current, high-speed switching in industrial power conversion and motion control systems.

FAQ

What is the maximum continuous collector current rating for the 2SC6082-EPN-1E?

The 2SC6082-EPN-1E is rated for 15 A continuous collector current (I_C) at case temperature T_c = 25°C. Derating is required above this temperature per the PC–Tc curve; at T_c = 100°C, usable I_C drops to approximately 8.5 A. This rating assumes proper heatsinking and adherence to V_CE and V_BE limits specified in the datasheet.

Does the 2SC6082-EPN-1E have an electrically insulated tab?

Yes, the 2SC6082-EPN-1E uses the TO-220F-3SG package with a fully insulated metal tab. This eliminates the need for insulating hardware when mounting to a heatsink, reducing thermal interface resistance and simplifying mechanical assembly. The insulation withstands ≥2500 V RMS per JEDEC standards.

What is the typical gain-bandwidth product (f_T) of the 2SC6082-EPN-1E and how is it measured?

The 2SC6082-EPN-1E has a typical f_T of 195 MHz, measured at V_CE = 10 V and I_C = 2 A with f = 1 MHz. This parameter reflects the frequency at which small-signal current gain drops to unity and directly informs usable switching frequency limits in amplifier or high-speed switch applications.

Can the 2SC6082-EPN-1E be used as a direct replacement for the 2SC6082-1E?

Yes, the 2SC6082-EPN-1E is functionally identical to the 2SC6082-1E - same die, same electrical specifications, same TO-220F-3SG package. The "EPN" suffix denotes enhanced packaging traceability (e.g., lot-specific magazine labeling), not a parametric change. Both parts share identical V_CE(sat), h_FE, f_T, and thermal ratings.

What is the recommended base drive current to saturate the 2SC6082-EPN-1E at 7.5 A collector current?

To achieve V_CE(sat) ≤400 mV at I_C = 7.5 A, the 2SC6082-EPN-1E requires I_B = 375 mA, corresponding to a forced beta (I_C/I_B) of 20. This drive level ensures robust saturation across temperature and process variation; lower I_B risks increased V_CE(sat) and thermal stress during conduction.

2SC6082-EPN-1E Specifications

Product attributes: Attribute value

Manufacturer:: onsemi

Series:: -

Package/Case:: TO-220-3 Full Pack

Packaging:: Tube

Product Status:: Active

Transistor Type:: NPN

Current - Collector (Ic) (Max):: 15 A

Voltage - Collector Emitter Breakdown (Max):: 50 V

Vce Saturation (Max) @ Ib, Ic:: 400mV @ 375mA, 7.5A

Current - Collector Cutoff (Max):: 10µA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce:: 200 @ 330mA, 2V

Power - Max:: 2 W

Frequency - Transition:: 195MHz

Operating Temperature:: -

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220F-3SG

2SC6082-EPN-1E FAQ

1.How can I place an order for 2SC6082-EPN-1E through Aetrix?

Please submit a Request for Quotation (RFQ) for 2SC6082-EPN-1E on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 2SC6082-EPN-1E reliable?

The price and inventory of 2SC6082-EPN-1E are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 2SC6082-EPN-1E is usually 5 days.

3.What payment methods are accepted for 2SC6082-EPN-1E?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 2SC6082-EPN-1E transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for 2SC6082-EPN-1E?

2SC6082-EPN-1E orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 2SC6082-EPN-1E order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 2SC6082-EPN-1E?

For technical support, including 2SC6082-EPN-1E datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 2SC6082-EPN-1E requirements.

6.How does Aetrix verify that 2SC6082-EPN-1E is sourced from the original manufacturer or authorized distributors?

All 2SC6082-EPN-1E products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 2SC6082-EPN-1E meets industry standards.

7.What is the process for return or replacement of 2SC6082-EPN-1E?

All 2SC6082-EPN-1E units undergo pre-shipment inspection (PSI). If there is an issue with 2SC6082-EPN-1E, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 2SC6082-EPN-1E part is unused and in its original packaging.

Return procedure for 2SC6082-EPN-1E:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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