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Home > Products > Discrete Semiconductor Products > Transistors > Bipolar (BJT) > Single Bipolar Transistors

onsemi 2SC6094-TD-E

Name: 2SC6094-TD-E
Brand: onsemi
SKU: 2SC6094-TD-E
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: 2SC6094-TD-E

Manufacturer:: onsemi

Category:: Single Bipolar Transistors

Package:: TO-243AA

Datasheet:: 2SC6094-TD-E.pdf

Description:: TRANS NPN 60V 3A PCP

Quantity:: RFQ Add To RFQ list

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Product details

Overview

2SC6094-TD-E from onsemi is an NPN bipolar junction transistor (BJT) designed for medium-power switching applications, featuring V_CEO = 60 V, I_C = 3 A continuous, V_CE(sat) as low as 80 mV at I_C = 1 A / I_B = 100 mA, f_T = 390 MHz, and housed in the PCP (SOT-89/SC-62) surface-mount package. It is used in DC/DC converters, motor drivers, and lamp drivers where low saturation voltage and high-speed switching are critical.

For engineers reviewing the 2SC6094-TD-E datasheet, pinout, applications, or equivalent options, key selection criteria include verified V_CE(sat) performance at 1 A, h_FE range of 300–600 at 100 mA, thermal dissipation capability of 1.3 W on ceramic substrate, and confirmed SOT-89-compatible footprint with Base–Collector–Emitter terminal assignment.

Technical Context

This NPN BJT employs onsemi's FBET and MBIT process technologies to achieve low V_CE(sat) and high-speed switching-ton = 35 ns, tf = 24 ns-with robust safe operating area up to I_CP = 5 A (pulse). Its breakdown ratings (V_(BR)CBO = 100 V, V_(BR)CEO = 60 V) support operation in 24–48 V industrial power stages.

The device operates across T_stg = –55°C to +150°C and T_j = 150°C max, with electrical characteristics fully specified at T_a = 25°C. Its Cob = 18 pF at V_CB = 10 V enables stable high-frequency switching without excessive Miller effect in flyback or half-bridge topologies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CEO	60 V - Maximum collector-emitter voltage before breakdown under open-base condition; sets upper rail limit for 24/48 V DC/DC and motor drive stages.
I_C (continuous)	3 A - Continuous collector current rating; supports 2–3 A load switching with adequate heatsinking on ceramic substrate.
V_CE(sat) @ 1 A / 100 mA	80–120 mV - Low saturation voltage reduces conduction loss to <120 mW at 1 A, improving efficiency in PWM-driven loads.
f_T	390 MHz - Gain-bandwidth product confirms suitability for high-speed switching up to ~50 MHz practical operating frequency.
h_FE @ 100 mA	300–600 - High DC current gain enables low base drive current (e.g., 1–3 mA) for full saturation at 1–2 A collector load.
P_C (ceramic substrate)	1.3 W - Power dissipation limit when mounted on 250 mm² × 0.8 mm ceramic board; defines thermal design margin for sustained operation.

Pinout & Package

Package: PCP (JEITA SC-62 / JEDEC TO-243 / industry-standard SOT-89), molded plastic surface-mount package with heat sink tab (pin 2). Dimensions: 4.5 × 2.5 × 1.6 mm (L × W × H), mass = 0.058 g.

Pin/Terminal	Circuit Role	Design Meaning
1	Base	Control input node; requires ≥100 mA peak base current for full saturation at 1 A collector load per datasheet test conditions.
2	Collector	Main power output node; electrically connected to heat sink tab; must be routed to low-inductance high-current path.
3	Emitter	Power return node; referenced to system ground in common-emitter configuration; forms low-impedance emitter degeneration path.

Key Features

Feature	Design Value
Low V_CE(sat)	80 mV min at I_C = 1 A / I_B = 100 mA - reduces conduction loss by >40% vs. standard BJTs with V_CE(sat) > 200 mV.
High-speed switching	ton = 35 ns, tf = 24 ns - enables efficient operation in 100–500 kHz SMPS and PWM motor control without excessive switching loss.
Large current capacity	I_C = 3 A continuous, I_CP = 5 A pulse - supports peak-load handling in relay and lamp drivers with 2× safety margin.
High power dissipation	P_C = 3.5 W at T_c = 25°C - allows direct mounting to PCB copper pour or small heatsink for thermally constrained designs.

Applications

DC/DC Converter Switching Stage	Brushed DC Motor Driver
Use Scenario: Used as main switching transistor in non-isolated buck or boost converters delivering 1–3 A output at 12–48 V input. IC Role / Device Role / Timing Role: NPN BJT switch operating in saturated on/off mode with external base driver; not a timing device. Use Value: Low V_CE(sat) minimizes conduction loss (<120 mW at 1 A), while 390 MHz f_T ensures clean turn-off in 200–500 kHz designs.	Use Scenario: Drives 12–24 V brushed DC motors in industrial actuators or HVAC dampers with PWM speed control. IC Role / Device Role / Timing Role: Medium-power discrete switch controlling motor current path; base driven by microcontroller GPIO or dedicated driver IC. Use Value: 3 A continuous rating handles stall currents; fast switching (tf = 24 ns) reduces PWM dead-time distortion and audible noise.
Lamp Driver (LED/Incandescent)	Relay Driver Interface
Use Scenario: Switches 12–24 V incandescent lamps or high-current LED arrays in automotive lighting or signage systems. IC Role / Device Role / Timing Role: High-current saturated switch replacing mechanical contacts; operated in linear or switched mode depending on dimming method. Use Value: V_(BR)CEO = 60 V withstands load-dump transients; low V_CE(sat) prevents thermal runaway during extended on-time.	Use Scenario: Interfaces microcontroller outputs to 12–24 V relay coils requiring 50–200 mA coil current in PLC I/O modules or power distribution units. IC Role / Device Role / Timing Role: General-purpose NPN interface transistor providing current gain and voltage level translation. Use Value: h_FE ≥ 300 ensures full saturation with ≤2 mA base drive; built-in ESD protection via process enhances field reliability.

DC/DC Converter Switching Stage

Brushed DC Motor Driver

Use Scenario: Used as main switching transistor in non-isolated buck or boost converters delivering 1–3 A output at 12–48 V input.

IC Role / Device Role / Timing Role: NPN BJT switch operating in saturated on/off mode with external base driver; not a timing device.

Use Value: Low V_CE(sat) minimizes conduction loss (<120 mW at 1 A), while 390 MHz f_T ensures clean turn-off in 200–500 kHz designs.

Use Scenario: Drives 12–24 V brushed DC motors in industrial actuators or HVAC dampers with PWM speed control.

IC Role / Device Role / Timing Role: Medium-power discrete switch controlling motor current path; base driven by microcontroller GPIO or dedicated driver IC.

Use Value: 3 A continuous rating handles stall currents; fast switching (tf = 24 ns) reduces PWM dead-time distortion and audible noise.

Lamp Driver (LED/Incandescent)

Relay Driver Interface

Use Scenario: Switches 12–24 V incandescent lamps or high-current LED arrays in automotive lighting or signage systems.

IC Role / Device Role / Timing Role: High-current saturated switch replacing mechanical contacts; operated in linear or switched mode depending on dimming method.

Use Value: V_(BR)CEO = 60 V withstands load-dump transients; low V_CE(sat) prevents thermal runaway during extended on-time.

Use Scenario: Interfaces microcontroller outputs to 12–24 V relay coils requiring 50–200 mA coil current in PLC I/O modules or power distribution units.

IC Role / Device Role / Timing Role: General-purpose NPN interface transistor providing current gain and voltage level translation.

Use Value: h_FE ≥ 300 ensures full saturation with ≤2 mA base drive; built-in ESD protection via process enhances field reliability.

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN switching transistor applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
MJD127G (onsemi)	V_CEO = 100 V, I_C = 2 A, V_CE(sat) = 1.5 V @ 1 A - higher saturation voltage, lower current, larger SOT-223 package.	Better for higher-voltage, lower-speed linear amplification; less suitable for high-efficiency 1–3 A switching.	Select MJD127G only if V_CEO > 80 V is required and thermal budget allows higher V_CE(sat) loss.
ZTX653 (Diodes Inc.)	V_CEO = 60 V, I_C = 3 A, V_CE(sat) = 150 mV @ 1 A - same voltage/current rating but 87% higher saturation voltage than 2SC6094-TD-E.	Acceptable for cost-sensitive relay/lamp drivers where <100 mV V_CE(sat) is not mandatory.	Choose ZTX653 if SOT-89 footprint compatibility is needed but ultra-low-loss switching is secondary to procurement availability.

Compared with MJD127G and ZTX653, the 2SC6094-TD-E delivers superior conduction efficiency (V_CE(sat) ≤120 mV) and higher f_T, making it optimal for thermally constrained, high-frequency switching applications where minimizing I²R loss is critical.

Availability

2SC6094-TD-E is available at Aetrix Electronics and suitable for DC/DC converter design, brushed motor control, and industrial relay interface applications requiring stable component supply, RoHS-compliant packaging, and consistent SOT-89 form factor.

Supply support for 2SC6094-TD-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

onsemi (formerly ON Semiconductor) is a global semiconductor supplier focused on energy-efficient innovation for automotive, industrial, cloud, and IoT applications.

The 2SC6094-TD-E belongs to onsemi's general-purpose bipolar transistor product line, engineered specifically for high-reliability, medium-current switching in power conversion and electromechanical interface circuits.

FAQ

What is the maximum continuous collector current rating for the 2SC6094-TD-E?

The 2SC6094-TD-E has a maximum continuous collector current (I_C) rating of 3 A at T_a = 25°C when mounted on a ceramic substrate (250 mm² × 0.8 mm). Derating applies above 25°C ambient; the datasheet provides PC vs. Ta and PC vs. Tc curves to guide thermal design. At case temperature T_c = 25°C, the limit rises to 3.5 W, supporting higher current with proper heatsinking. Always verify actual board layout and airflow in final 2SC6094-TD-E implementation.

Does the 2SC6094-TD-E support high-frequency switching applications?

Yes, the 2SC6094-TD-E supports high-frequency switching with a gain-bandwidth product (f_T) of 390 MHz and measured switching times of ton = 35 ns and tf = 24 ns. These parameters confirm suitability for PWM-based applications up to several hundred kHz-such as 200–500 kHz DC/DC converters and motor drives-provided base drive strength and PCB layout minimize parasitic inductance. The 2SC6094-TD-E's low Cob (18 pF) further aids stability in fast-switching configurations.

What is the pin configuration and package type of the 2SC6094-TD-E?

The 2SC6094-TD-E uses the PCP package (JEITA SC-62 / JEDEC TO-243), identical to the industry-standard SOT-89 outline. Pin 1 is Base, Pin 2 is Collector (connected to the exposed heat sink tab), and Pin 3 is Emitter. The package measures 4.5 × 2.5 × 1.6 mm and is supplied in 1,000-piece embossed tape-and-reel (TD) format. This 2SC6094-TD-E pinout is validated per onsemi's official marking diagram and land pattern example.

What is the typical V_CE(sat) of the 2SC6094-TD-E under standard test conditions?

The typical V_CE(sat) of the 2SC6094-TD-E is 90 mV at I_C = 1 A and I_B = 50 mA, and 80 mV at I_C = 1 A and I_B = 100 mA. The datasheet specifies maximum values of 135 mV and 120 mV respectively, ensuring design margin for worst-case saturation performance. This low V_CE(sat) directly reduces conduction losses in 2SC6094-TD-E-based switching stages, especially critical in battery-powered or thermally limited systems.

Is the 2SC6094-TD-E RoHS-compliant and lead-free?

Yes, the 2SC6094-TD-E is RoHS-compliant and lead-free, as confirmed in the "Ordering Information" section of the official onsemi datasheet (document number ENA0410A), which states "Pb Free" under the "memo" column for part number 2SC6094-TD-E. The device meets EU Directive 2011/65/EU and is manufactured using onsemi's qualified green packaging process. Traceability documentation and material declarations for the 2SC6094-TD-E are available upon request from Aetrix Electronics.

2SC6094-TD-E Specifications

Product attributes: Attribute value

Manufacturer:: onsemi

Series:: -

Package/Case:: TO-243AA

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

Transistor Type:: NPN

Current - Collector (Ic) (Max):: 3 A

Voltage - Collector Emitter Breakdown (Max):: 60 V

Vce Saturation (Max) @ Ib, Ic:: 120mV @ 100mA, 1A

Current - Collector Cutoff (Max):: 1µA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce:: 300 @ 100mA, 2V

Power - Max:: 1.3 W

Frequency - Transition:: 390MHz

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PCP

2SC6094-TD-E FAQ

1.How can I place an order for 2SC6094-TD-E through Aetrix?

Please submit a Request for Quotation (RFQ) for 2SC6094-TD-E on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 2SC6094-TD-E reliable?

The price and inventory of 2SC6094-TD-E are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 2SC6094-TD-E is usually 5 days.

3.What payment methods are accepted for 2SC6094-TD-E?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 2SC6094-TD-E transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for 2SC6094-TD-E?

2SC6094-TD-E orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 2SC6094-TD-E order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 2SC6094-TD-E?

For technical support, including 2SC6094-TD-E datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 2SC6094-TD-E requirements.

6.How does Aetrix verify that 2SC6094-TD-E is sourced from the original manufacturer or authorized distributors?

All 2SC6094-TD-E products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 2SC6094-TD-E meets industry standards.

7.What is the process for return or replacement of 2SC6094-TD-E?

All 2SC6094-TD-E units undergo pre-shipment inspection (PSI). If there is an issue with 2SC6094-TD-E, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 2SC6094-TD-E part is unused and in its original packaging.

Return procedure for 2SC6094-TD-E:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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