Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

onsemi 2SC6097-E

Part No.:
2SC6097-E
Manufacturer:
onsemi
Category:
Single Bipolar Transistors
Package:
TO-251-3 Short Leads, IPAK, TO-251AA
Datasheet:
Aetrix2SC6097-E.pdf
Description:
TRANS NPN 60V 3A TP
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:5,396

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

2SC6097-E from onsemi is an NPN bipolar junction transistor optimized for high-current switching in power electronics, featuring VCEO = 60 V, IC = 3 A continuous, VCE(sat) ≤ 150 mV at IC = 1 A / IB = 50 mA, fT = 390 MHz, and housed in SC-64 (TO-251) package. It serves as a main switch in DC/DC converters and motor drivers where low saturation loss and thermal robustness are critical.

For engineers reviewing the 2SC6097-E datasheet, pinout, applications, or equivalent options, key selection criteria include verified VCE(sat) performance at 1 A, hFE range of 300–600 at 100 mA, TO-251 thermal dissipation capability (15 W at TC = 25°C), and confirmed suitability for relay and lamp driver topologies per onsemi's published test circuits.

Technical Context

This NPN transistor employs onsemi's FBET and MBIT process to achieve low VCE(sat) and high-speed switching (ton = 35 ns, tf = 24 ns). Its breakdown ratings-V(BR)CBO = 100 V, V(BR)CEO = 60 V, and V(BR)EBO = 6.5 V-define safe operating limits under open-base and open-emitter conditions.

The device supports pulsed collector current up to 5 A (ICP) and operates across −55°C to +150°C junction temperature range. Its Cob = 18 pF at VCB = 10 V enables stable high-frequency gain behavior, validated in fT vs. IC curves up to 500 mA.

Key Specifications

ParameterValue and Actual Design Meaning
VCEO60 V - Maximum collector-emitter voltage with base open; sets upper limit for DC/DC flyback and motor drive bus voltage compatibility.
IC (continuous)3 A - Continuous collector current rating; defines steady-state load-handling capacity in relay and lamp drivers.
VCE(sat) @ 1 A / 50 mA≤150 mV - Low saturation voltage minimizes conduction loss and self-heating in high-duty-cycle switching applications.
hFE @ 2 V, 100 mA300–600 - DC current gain range determines required base drive strength and impacts gate driver sizing in discrete BJT stages.
fT390 MHz - Gain-bandwidth product confirms suitability for >100 kHz switching frequencies in SMPS designs.
PC @ TC = 25°C15 W - Case-referenced power dissipation enables high-power pulse operation without heatsink in short-duration loads.
Cob18 pF @ 10 V - Output capacitance affects turn-off energy and EMI in hard-switched topologies.

Pinout & Package

2SC6097-E is packaged in SC-64 (TO-251), a surface-mount variant of TO-251 with gull-wing leads and exposed drain pad thermally connected to collector. The package provides enhanced thermal transfer versus TO-92 and supports automated assembly.

Pin/TerminalCircuit RoleDesign Meaning
1 (Emitter)Current sink terminalConnected to ground or low-side return path; must handle full load current and support fast discharge during turn-off.
2 (Base)Control inputReceives current-limited drive signal; requires ≥50 mA for full saturation at 1 A collector load per datasheet test condition.
3 (Collector)High-side current sourceConnected to positive rail or inductive load; electrically and thermally tied to exposed pad for heat dissipation.

Key Features

FeatureDesign Value
Low VCE(sat)100–150 mV at IC = 1 A ensures <150 mW conduction loss, reducing thermal stress in compact motor driver PCBs.
High-speed switchington/tf = 35 ns/24 ns enables clean square-wave operation up to 2 MHz in resonant or Class-E topologies.
Large current capacity3 A continuous / 5 A pulsed rating supports direct driving of 24 V solenoids and small BLDC phase legs without external buffers.
High allowable power dissipation15 W at TC = 25°C allows sustained operation at >2 A with minimal heatsinking in ambient temperatures ≤50°C.

Applications

DC/DC Converter SwitchRelay Driver

Use Scenario: Primary-side switch in non-isolated buck or boost converters operating at 100–500 kHz.

IC Role / Device Role / Timing Role: Main power switch controlling energy transfer via duty-cycle modulation; replaces MOSFETs where gate drive complexity must be minimized.

Use Value: VCE(sat) ≤150 mV reduces conduction loss by ~40% versus standard general-purpose BJTs, improving efficiency at 1–2 A output loads.

Use Scenario: Solid-state replacement for mechanical relays in industrial PLC output modules.

IC Role / Device Role / Timing Role: High-current interface between microcontroller GPIO and 12–24 V coil loads; driven directly from 3.3 V/5 V logic with base resistor.

Use Value: hFE ≥300 at 100 mA enables reliable saturation with ≤1 mA MCU output current, eliminating need for Darlington or MOSFET buffer stages.

Lamp DriverMotor Driver

Use Scenario: Incandescent and halogen lamp dimming and on/off control in automotive interior lighting.

IC Role / Device Role / Timing Role: Low-side switch handling inrush currents up to 5× steady-state; subjected to repetitive thermal cycling.

Use Value: Tj rating of 150°C and robust SOA (Figure 9–10) prevent thermal runaway during 100 ms lamp turn-on surges.

Use Scenario: H-bridge low-side leg in 12 V brushed DC motor controllers for robotics and power tools.

IC Role / Device Role / Timing Role: Fast-switching current sink enabling PWM speeds >20 kHz to eliminate audible noise.

Use Value: fT = 390 MHz and tf = 24 ns ensure minimal shoot-through risk and precise duty-cycle fidelity at 25 kHz PWM.

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN switching transistor applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
MJD127GVCEO = 100 V, IC = 2 A, VCE(sat) = 1.5 V @ 1 A - higher saturation voltage, lower current ratingLess suitable for 1 A+ continuous loads due to higher conduction loss and thermal riseSelect when higher VCEO margin is prioritized over efficiency at 1–2 A loads
2SD2656hFE = 120–240 @ 1 A, fT = 100 MHz - lower gain, slower switchingRequires larger base drive and exhibits longer storage time (tstg = 1.2 μs vs. 680 ns), limiting max PWM frequencyPrefer for cost-sensitive, low-frequency (<50 kHz) linear or quasi-resonant applications

Compared with MJD127G and 2SD2656, the 2SC6097-E delivers superior efficiency at 1–3 A loads due to its sub-150 mV VCE(sat), higher fT, and tighter hFE distribution-making it optimal for space-constrained, thermally demanding DC/DC and motor control designs.

Availability

2SC6097-E is available at Aetrix Electronics and suitable for DC/DC converter design, relay interface modules, and motor control circuits requiring stable component supply and consistent parametric performance across production batches.

Supply support for 2SC6097-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

onsemi (formerly ON Semiconductor) is a global semiconductor supplier specializing in energy-efficient power, analog, sensor, and connectivity solutions for automotive, industrial, cloud, and IoT applications.

The 2SC6097-E belongs to onsemi's high-performance bipolar transistor family engineered for low-loss, high-speed switching in power conversion and electromechanical actuation systems.

FAQ

What is the maximum continuous collector current rating for the 2SC6097-E?

The 2SC6097-E has a maximum continuous collector current (IC) rating of 3 A at TA = 25°C. This rating assumes proper PCB copper area and thermal management; derating applies above 25°C ambient, with full 3 A operation supported up to TC ≈ 70°C per the PC vs. TC curve in the datasheet. At 50°C ambient with 1-in² 2-oz copper, typical usable IC remains ≥2.5 A.

Does the 2SC6097-E support pulsed operation beyond its DC current rating?

Yes, the 2SC6097-E supports pulsed collector current (ICP) up to 5 A, specified under conditions of <10 μs pulse width and 1% duty cycle. This capability is validated in the Safe Operating Area (SOA) plots (Figures 9–10), confirming reliability for inrush current handling in lamp and relay drivers without secondary protection circuitry.

What package type is used for the 2SC6097-E, and how does it impact thermal performance?

The 2SC6097-E uses the SC-64 (TO-251) package, which features an exposed collector pad for direct thermal coupling to the PCB. This construction achieves 15 W power dissipation at TC = 25°C-over 18× higher than TO-92 alternatives-and enables efficient heat spreading across internal copper layers, critical for motor driver and converter applications with limited heatsink space.

How does the 2SC6097-E's VCE(sat) compare to standard NPN transistors in similar packages?

The 2SC6097-E achieves VCE(sat) ≤150 mV at IC = 1 A / IB = 50 mA-approximately 3–5× lower than conventional NPN transistors like the MMBT4401 (VCE(sat) ≈ 750 mV). This reduction directly lowers conduction losses and junction temperature rise, extending reliability in thermally constrained 24 V industrial control modules.

Is the 2SC6097-E suitable for high-frequency switching applications such as Class-D audio or RF amplifiers?

The 2SC6097-E is rated for fT = 390 MHz and exhibits tf = 24 ns, making it suitable for switching applications up to ~2 MHz, including high-frequency DC/DC converters and PWM motor control. However, it is not characterized or recommended for RF amplifier use above 30 MHz due to lack of S-parameter data, gain flatness validation, or harmonic distortion specifications in the datasheet.

2SC6097-E Specifications

Product attributes
Attribute value
Manufacturer:
onsemi
Series:
-
Package/Case:
TO-251-3 Short Leads, IPAK, TO-251AA
Packaging:
Bag
Product Status:
Obsolete
Transistor Type:
NPN
Current - Collector (Ic) (Max):
3 A
Voltage - Collector Emitter Breakdown (Max):
60 V
Vce Saturation (Max) @ Ib, Ic:
135mV @ 100mA, 1A
Current - Collector Cutoff (Max):
1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:
300 @ 100mA, 2V
Power - Max:
800 mW
Frequency - Transition:
390MHz
Operating Temperature:
150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
TP

2SC6097-E FAQ

1.How can I place an order for 2SC6097-E through Aetrix?

Please submit a Request for Quotation (RFQ) for 2SC6097-E on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 2SC6097-E reliable?

The price and inventory of 2SC6097-E are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 2SC6097-E is usually 5 days.

3.What payment methods are accepted for 2SC6097-E?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 2SC6097-E transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for 2SC6097-E?

2SC6097-E orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 2SC6097-E order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 2SC6097-E?

For technical support, including 2SC6097-E datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 2SC6097-E requirements.

6.How does Aetrix verify that 2SC6097-E is sourced from the original manufacturer or authorized distributors?

All 2SC6097-E products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 2SC6097-E meets industry standards.

7.What is the process for return or replacement of 2SC6097-E?

All 2SC6097-E units undergo pre-shipment inspection (PSI). If there is an issue with 2SC6097-E, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 2SC6097-E part is unused and in its original packaging.

Return procedure for 2SC6097-E:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

2SC6097-E Tags

  • 2SC6097-E
  • 2SC6097-E PDF
  • 2SC6097-E Datasheet
  • 2SC6097-E Specifications
  • 2SC6097-E Images
  • onsemi
  • onsemi 2SC6097-E
  • Buy 2SC6097-E
  • 2SC6097-E Price
  • 2SC6097-E Distributor
  • 2SC6097-E Supplier
  • 2SC6097-E Wholesale
Related Products
MMBT3906LT1G
MMBT3906LT1G

onsemi

MMBT3904-7-F
MMBT3904-7-F

Diodes Incorporated

MMBT3904LT1G
MMBT3904LT1G

onsemi

MMBT3906-7-F
MMBT3906-7-F

Diodes Incorporated

MMBT3904-TP
MMBT3904-TP

Micro Commercial Co

MMBT2222A-7-F
MMBT2222A-7-F

Diodes Incorporated

BC846BLT1G
BC846BLT1G

onsemi

BC847B,215
BC847B,215

Nexperia USA Inc.

SMMBT3904LT1G
SMMBT3904LT1G

onsemi

MMBT2222A-TP
MMBT2222A-TP

Micro Commercial Co

MMBTA06LT1G
MMBTA06LT1G

onsemi

MMBT2222ALT1G
MMBT2222ALT1G

onsemi

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER