onsemi 2SC6099-E

Overview

2SC6099-E from onsemi is an NPN general-purpose bipolar junction transistor (BJT) in a small-outline SOT-323 (SC-70) package, rated for 50 V V_CEO, 150 mA I_C, and 200 mW P_D, commonly used in low-power switching and amplification circuits in portable electronics and signal conditioning stages.

For engineers reviewing the 2SC6099-E datasheet, pinout, applications, or equivalent options, key selection criteria include DC current gain (h_FE = 120–270 at I_C = 2 mA), transition frequency (f_T = 80 MHz), saturation voltage (V_CE(sat) ≤ 0.3 V at I_C/I_B = 50 mA/5 mA), and thermal resistance (R_θJA = 417 °C/W).

Technical Context

This NPN BJT operates in active, saturation, and cutoff regions with defined DC biasing characteristics. Its f_T of 80 MHz supports RF amplification up to VHF band edges, while its low V_CE(sat) enables efficient switching in battery-powered logic interfaces and LED drivers.

The device features epitaxial planar construction with built-in emitter-base shunt resistor not present - it is a standard discrete BJT without integrated biasing resistors. Its SOT-323 package provides surface-mount compatibility with JEDEC-standard footprint and thermal performance validated per JESD51-2.

Key Specifications

Pinout & Package

2SC6099-E uses the SOT-323 (SC-70) 3-pin surface-mount plastic package with standard lead configuration: Emitter, Base, Collector - left-to-right when viewed top-side with marking dot at top-left corner.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN BJT switching and amplification applications.

Compared with BC847B,115 and MMBT3904LT1G, the 2SC6099-E offers a balanced trade-off of voltage rating, gain stability at low I_C, and proven thermal behavior in compact consumer PCBs - making it optimal for cost-sensitive, space-constrained 3.3 V–12 V signal chain designs.

Availability

2SC6099-E is available at Aetrix Electronics and suitable for LED driver circuits, logic-level translation, audio pre-amplification, and microcontroller peripheral interface applications requiring stable component supply and long-term manufacturability.

Supply support for 2SC6099-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

onsemi is a global semiconductor supplier delivering energy-efficient, intelligent power and sensing solutions for automotive, industrial, cloud, medical, and IoT applications.

The 2SC6099-E belongs to onsemi's general-purpose bipolar transistor product line, designed specifically for reliable, low-cost switching and amplification in portable and battery-operated electronics.

FAQ

What is the maximum collector-emitter voltage rating for the 2SC6099-E?

The 2SC6099-E has a maximum collector-emitter voltage (V_CEO) rating of 50 V. This specification defines the upper limit of voltage that can be safely applied between collector and emitter with the base open. Exceeding this value risks avalanche breakdown and permanent device failure. Designers should maintain at least 20% margin below 50 V in 24 V system applications to accommodate transients and tolerances. The 2SC6099-E datasheet confirms this rating under standard test conditions at T_A = 25 °C.

Does the 2SC6099-E include built-in bias resistors?

No, the 2SC6099-E is a standard discrete NPN bipolar junction transistor without any integrated base-emitter or base-collector resistors. It requires external biasing components - such as series base resistors and optional emitter degeneration - to establish proper DC operating points in amplifier or switch configurations. This distinguishes it from digital transistors (BRTs) like the NSVMUN2233T1G. The 2SC6099-E pinout and internal structure documentation confirm no internal resistive elements.

What is the typical transition frequency (f_T) of the 2SC6099-E and how is it measured?

The 2SC6099-E has a typical transition frequency (f_T) of 80 MHz, measured at I_C = 10 mA, V_CE = 10 V, and f = 100 MHz per onsemi's characterization methodology. This parameter indicates the frequency at which the transistor's short-circuit current gain drops to unity, defining its useful bandwidth for small-signal amplification. The 2SC6099-E achieves this performance through optimized epitaxial layer thickness and junction geometry, enabling stable gain in VHF front-end stages and fast-switching PWM drivers.

Can the 2SC6099-E be used in linear amplifier applications?

Yes, the 2SC6099-E is suitable for linear amplifier applications such as audio pre-amplifiers and sensor signal conditioning, provided it is biased within its safe operating area (SOA). Its h_FE stability (120–270 at I_C = 2 mA), low noise figure (< 10 dB at 1 kHz), and adequate f_T support mid-band voltage gain with acceptable distortion. However, designers must avoid operation near thermal limits - the 200 mW P_D rating and 417 °C/W R_θJA require careful thermal design in sustained linear mode. The 2SC6099-E datasheet includes small-signal AC parameters confirming this capability.

Is the 2SC6099-E RoHS-compliant and halogen-free?

Yes, the 2SC6099-E is RoHS-compliant and halogen-free per onsemi's material declarations. It meets EU Directive 2011/65/EU (RoHS 2) and satisfies IEC 61249-2-21:2011 for bromine and chlorine content (< 900 ppm each) and total halogens (< 1500 ppm). The device carries the "Pb-Free" and "Halogen-Free" markings on its SOT-323 package body, and full compliance documentation is available in onsemi's Material Declaration Report for 2SC6099-E.