Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Toshiba Semiconductor and Storage 2SC6135,LF

Part No.:
2SC6135,LF
Manufacturer:
Toshiba Semiconductor and Storage
Category:
Single Bipolar Transistors
Package:
3-SMD, Flat Leads
Datasheet:
Aetrix2SC6135,LF.pdf
Description:
TRANS NPN 50V 1A UFM
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:6,214

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

2SC6135,LF from Toshiba Electronic Devices & Storage Corporation is a silicon NPN epitaxial transistor designed for high-speed switching in DC-DC converters and strobe circuits. It delivers hFE = 400–1000 at IC = 0.1 A, VCE(sat) ≤ 0.12 V (IC = 300 mA, IB = 6 mA), and tf = 85 ns (typ.), enabling efficient low-loss switching in compact power stages.

For engineers reviewing the 2SC6135,LF datasheet, 2SC6135,LF pinout, 2SC6135,LF application, or 2SC6135,LF equivalent, key selection criteria include its 50 V VCEO rating, 1.0 A continuous collector current, UFM package with confirmed 3-pin leaded configuration, and verified performance in pulse-driven lighting and SMPS control stages.

Technical Context

This transistor operates in common-emitter configuration with fixed bias-driven switching behavior. Its low VCE(sat) and fast tf/tr/tstg timing (tf = 85 ns, tr = 35 ns, tstg = 680 ns) support high-duty-cycle, low-loss operation in flyback and boost converter primary-side switches.

Designed for discrete BJT-based topologies, it relies on external base drive for saturation control and exhibits strong hFE stability across IC = 0.1–0.3 A and temperatures up to 100°C, as confirmed by published IC–hFE and VCE(sat)–IC curves.

Key Specifications

ParameterValue and Actual Design Meaning
VCEO50 V - Maximum safe collector-emitter voltage under open-base conditions; defines upper limit for switch node voltage swing in DC-DC applications.
IC (DC)1.0 A - Continuous collector current handling capacity; supports ≥1 W switching loads with appropriate heatsinking on FR4.
hFE (IC = 0.1 A)400–1000 - High DC current gain enables low base drive current (e.g., ~0.1–0.25 mA) for 100 mA collector load.
VCE(sat)≤0.12 V @ IC = 300 mA, IB = 6 mA - Minimizes conduction loss in saturated-switch mode; contributes to <36 mW static loss at 300 mA.
tf85 ns (typ.) - Fall time measured under VCC ≈ 30 V, RL = 100 Ω; enables >1 MHz switching in optimized driver layouts.
Cob5 pF @ VCB = 10 V - Low output capacitance reduces Miller-effect delay and improves turn-off speed in high-frequency switching.

Pinout & Package

Supplied in the UFM (2-2U1A) surface-mount package: 3-pin, single-row, gull-wing leads, 2.1 mm × 1.7 mm footprint, 0.65 mm pitch, 0.7 mm height, 6.6 mg typical weight.

Pin/TerminalCircuit RoleDesign Meaning
1BaseControl terminal accepting DC or pulsed current to drive transistor into saturation or cutoff; requires series resistor for current limiting.
2EmitterCurrent return path; connected to ground or low-side reference in common-emitter configurations; carries full load current.
3CollectorHigh-side switching node; connects to inductive load or switching rail; must withstand VCEO and handle peak current surges.

Key Features

FeatureDesign Value
High hFE range400–1000 at IC = 0.1 A ensures consistent saturation with minimal base drive overhead across production lots.
Low VCE(sat)≤0.12 V reduces conduction losses below 36 mW at 300 mA, improving thermal margin in space-constrained DC-DC modules.
Fast switchingtf = 85 ns and tr = 35 ns enable clean edge transitions in strobe flash timing and PWM-controlled power stages.
Robust voltage ratingsVCBO = 100 V and VCEO = 50 V support use in 24–48 V input systems with transient margin for inductive kickback.

Applications

Strobe Lighting ControlDC-DC Converter Switch

Use Scenario: Driving xenon or high-intensity LED flash tubes in camera modules and emergency beacons.

IC Role / Device Role / Timing Role: NPN switch controlling high-current discharge pulse through flash capacitor; triggered by microcontroller GPIO.

Use Value: Fast tf/tr and low VCE(sat) ensure precise sub-millisecond flash duration and minimal energy loss during pulse delivery.

Use Scenario: Low-side switching element in non-synchronous buck or boost converter power stages.

IC Role / Device Role / Timing Role: Discrete main switch turning inductor current on/off at 100 kHz–1 MHz; driven by PWM controller via base resistor network.

Use Value: High hFE allows direct MCU-level drive without buffer stage; 50 V VCEO safely handles 36 V input transients.

Industrial Sensor InterfaceRelay Driver Circuit

Use Scenario: Level-shifting and current amplification for digital outputs driving optocouplers or isolated logic inputs.

IC Role / Device Role / Timing Role: Signal-conditioning transistor translating 3.3 V/5 V logic to 12–24 V interface levels with galvanic isolation.

Use Value: Stable hFE over temperature ensures reliable logic translation across -40°C to +85°C industrial ambient ranges.

Use Scenario: Driving electromagnetic relay coils rated up to 1 A in PLC I/O modules and HVAC controllers.

IC Role / Device Role / Timing Role: Saturated switch providing full coil current while clamping inductive flyback with external diode.

Use Value: Low VCE(sat) limits self-heating during continuous duty; 1.0 A IC rating matches standard 12 V/24 V relay coil requirements.

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN switching transistor applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
2SC5662,LFVCEO = 60 V, hFE = 350–800, tf = 100 ns, same UFM packageHigher voltage margin but slower fall time; suitable where 60 V headroom is criticalPrefer when operating near 48 V rails with significant transients
MMBT4401LT1GVCEO = 40 V, hFE = 100–300, SOT-23 package, lower power dissipation (225 mW)Lower voltage/current capability; not drop-in due to different package and gain profileSelect only for low-power signal switching where 500 mW PC is sufficient

Compared with 2SC6135,LF, the 2SC5662,LF offers higher VCEO but slower switching, while MMBT4401LT1G provides SOT-23 compatibility at reduced voltage and gain-neither is pin-compatible, and both require layout and drive circuit review for substitution.

Availability

2SC6135,LF is available at Aetrix Electronics and suitable for high-speed switching, DC-DC converter, and strobe lighting applications requiring stable component supply and long-term industrial availability.

Supply support for 2SC6135,LF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Toshiba Electronic Devices & Storage Corporation designs and manufactures discrete semiconductors, power devices, and logic ICs for industrial, automotive, and consumer applications.

The 2SC6135,LF belongs to Toshiba's general-purpose bipolar transistor product line, engineered specifically for cost-sensitive, high-reliability discrete switching in power conversion and pulse control systems.

FAQ

What is the maximum continuous collector current rating for the 2SC6135,LF?

The 2SC6135,LF has a maximum continuous collector current (IC) rating of 1.0 A at Ta = 25°C when mounted on an FR4 board (Note 2). Derating applies above 25°C ambient; at 70°C, usable IC drops to approximately 0.7 A per published thermal resistance data. This rating directly determines its suitability for 1 A-class switching loads in the 2SC6135,LF design.

Does the 2SC6135,LF have a documented RoHS compliance status?

Yes, the 2SC6135,LF is RoHS compliant per Toshiba's environmental documentation. The ",LF" suffix explicitly denotes lead-free termination and halogen-free packaging. Compliance aligns with EU Directive 2011/65/EU and Toshiba's internal substance control standards, confirmed in official Toshiba product change notices and material declarations for the 2SC6135,LF.

What is the base-emitter saturation voltage specification for the 2SC6135,LF?

The 2SC6135,LF has a maximum base-emitter saturation voltage (VBE(sat)) of 1.10 V under test conditions of IC = 300 mA and IB = 6 mA. This value reflects the forward voltage required to fully saturate the base junction and is critical for calculating base resistor values in driver circuits using the 2SC6135,LF.

Can the 2SC6135,LF be used in linear amplifier applications?

No-the 2SC6135,LF is characterized and qualified exclusively for switching operation. Toshiba's datasheet specifies parameters like hFE only at defined switching bias points (e.g., VCE = 2 V, IC = 0.1 A), and does not provide small-signal parameters (e.g., fT, hfe, or noise figure) needed for linear amplification. Use of the 2SC6135,LF outside switching contexts is not supported.

What is the junction-to-ambient thermal resistance (RθJA) for the 2SC6135,LF on FR4?

For the 2SC6135,LF mounted on a standard FR4 board (25.4 mm × 25.4 mm × 1.6 mm, Cu pad = 645 mm²), RθJA is 250°C/W, derived from PC = 500 mW and ΔT = 125°C (150°C max Tj – 25°C ambient). This value governs thermal design margins and must be applied when estimating junction temperature rise in actual 2SC6135,LF deployments.

2SC6135,LF Specifications

Product attributes
Attribute value
Manufacturer:
Toshiba Semiconductor and Storage
Series:
-
Package/Case:
3-SMD, Flat Leads
Packaging:
Tape & Reel (TR)
Product Status:
Active
Transistor Type:
NPN
Current - Collector (Ic) (Max):
1 A
Voltage - Collector Emitter Breakdown (Max):
50 V
Vce Saturation (Max) @ Ib, Ic:
120mV @ 6mA, 300mA
Current - Collector Cutoff (Max):
100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:
400 @ 100mA, 2V
Power - Max:
500 mW
Frequency - Transition:
-
Operating Temperature:
150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
UFM

2SC6135,LF FAQ

1.How can I place an order for 2SC6135,LF through Aetrix?

Please submit a Request for Quotation (RFQ) for 2SC6135,LF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 2SC6135,LF reliable?

The price and inventory of 2SC6135,LF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 2SC6135,LF is usually 5 days.

3.What payment methods are accepted for 2SC6135,LF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 2SC6135,LF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for 2SC6135,LF?

2SC6135,LF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 2SC6135,LF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 2SC6135,LF?

For technical support, including 2SC6135,LF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 2SC6135,LF requirements.

6.How does Aetrix verify that 2SC6135,LF is sourced from the original manufacturer or authorized distributors?

All 2SC6135,LF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 2SC6135,LF meets industry standards.

7.What is the process for return or replacement of 2SC6135,LF?

All 2SC6135,LF units undergo pre-shipment inspection (PSI). If there is an issue with 2SC6135,LF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 2SC6135,LF part is unused and in its original packaging.

Return procedure for 2SC6135,LF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

2SC6135,LF Tags

  • 2SC6135,LF
  • 2SC6135,LF PDF
  • 2SC6135,LF Datasheet
  • 2SC6135,LF Specifications
  • 2SC6135,LF Images
  • Toshiba Semiconductor and Storage
  • Toshiba Semiconductor and Storage 2SC6135,LF
  • Buy 2SC6135,LF
  • 2SC6135,LF Price
  • 2SC6135,LF Distributor
  • 2SC6135,LF Supplier
  • 2SC6135,LF Wholesale
Related Products
MMBT3906LT1G
MMBT3906LT1G

onsemi

MMBT3904-7-F
MMBT3904-7-F

Diodes Incorporated

MMBT3904LT1G
MMBT3904LT1G

onsemi

MMBT3906-7-F
MMBT3906-7-F

Diodes Incorporated

MMBT3904-TP
MMBT3904-TP

Micro Commercial Co

MMBT2222A-7-F
MMBT2222A-7-F

Diodes Incorporated

BC846BLT1G
BC846BLT1G

onsemi

BC847B,215
BC847B,215

Nexperia USA Inc.

SMMBT3904LT1G
SMMBT3904LT1G

onsemi

MMBT2222A-TP
MMBT2222A-TP

Micro Commercial Co

MMBTA06LT1G
MMBTA06LT1G

onsemi

MMBT2222ALT1G
MMBT2222ALT1G

onsemi

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER