onsemi 2SD1060R-1E
- Part No.:
- 2SD1060R-1E
- Manufacturer:
- onsemi
- Category:
- Single Bipolar Transistors
- Package:
- TO-220-3
- Datasheet:
-
2SD1060R-1E.pdf
- Description:
- TRANS NPN 50V 5A TO-220-3
- Quantity:
- Payment:

- Shipping:

Inventory:7,345
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Product details
Overview
2SD1060R-1E from onsemi is a low-saturation-voltage NPN bipolar power transistor in TO-220-3L package, rated for 50 V VCEO, 5 A continuous collector current, and 0.3 V max VCE(sat) at IC = 3 A / IB = 0.3 A; used in high-current switching applications including relay drivers and DC-DC converters.
For engineers reviewing the 2SD1060R-1E datasheet, pinout, applications, or equivalent options, key selection criteria include verified VCE(sat) performance at 3 A, hFE range (100–280), switching times (ton = 0.1 μs, tf = 0.2 μs), thermal derating above 25°C, and TO-220AB mechanical compatibility.
Technical Context
This NPN transistor operates as a medium-power switching device with fixed emitter-base and collector-base junction structures optimized for low-loss saturation in linear and pulse-driven configurations. Its gain-bandwidth product of 30 MHz supports fast turn-on/turn-off transitions while maintaining stable DC current gain across 1–2 A operating range.
The device uses epitaxial planar construction with integrated thermal path to case, enabling 30 W dissipation at Tc = 25°C. Saturation voltage remains ≤0.3 V under specified drive conditions, and breakdown ratings (V(BR)CBO = 60 V, V(BR)CEO = 50 V) define safe operating area boundaries for inductive load commutation.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCEO | 50 V - Maximum allowable collector-emitter voltage before avalanche breakdown under open-base condition |
| IC (cont) | 5 A - Continuous collector current rating at Tc = 25°C; derates linearly above ambient temperature |
| VCE(sat) | 0.3 V max @ IC=3 A, IB=0.3 A - Confirmed low conduction loss enabling efficient high-current switching |
| hFE | 100–280 @ VCE=2 V, IC=1–2 A - Verified DC current gain range supporting reliable base drive design |
| fT | 30 MHz - Gain-bandwidth product confirming suitability for sub-microsecond switching waveforms |
| ton/tf | 0.1 μs / 0.2 μs - Measured turn-on and fall times under standardized 10 Ω load test circuit |
| PC (Tc) | 30 W @ Tc=25°C - Case-referenced power dissipation limit requiring heatsink for sustained operation |
Pinout & Package
Package: TO-220-3L (JEDEC TO-220AB, JEITA SC-46), thermally enhanced through-hole package with metal tab electrically connected to collector; requires insulated mounting hardware when collector is not at chassis ground.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (Base) | Control input terminal | Receives forward-biased base current to enable conduction between collector and emitter |
| 2 (Collector) | High-side power terminal | Connected to metal tab; carries full load current and must be electrically isolated if not referenced to system ground |
| 3 (Emitter) | Low-side return terminal | Serves as common reference node for base drive and load return path; typically tied to ground or negative rail |
Key Features
| Feature | Design Value |
|---|---|
| Low VCE(sat) | 0.3 V max at 3 A ensures <1 W conduction loss per device in 5 A switching paths |
| Fast switching | 0.1 μs turn-on and 0.2 μs fall time support PWM frequencies up to ~1 MHz in hard-switched topologies |
| Robust SOA | Rated for 9 A pulsed current (ICP) and 50 V VCEO, enabling reliable operation with inductive kickback |
| Thermal capability | 30 W case dissipation enables use without forced air cooling in moderate-duty industrial controls |
| Standardized marking | "D1060" + lot code + rank (R/S) printed on package confirms hFE binning per ON Semiconductor specification EN686K |
Applications
| Relay Driver Circuit | DC-DC Converter Switch |
|---|---|
Use Scenario: Driving 24 V, 100 mA coil relays in programmable logic controllers with microcontroller GPIO output. IC Role / Device Role / Timing Role: NPN switch amplifying low-current MCU signal to fully saturate relay coil with minimal voltage drop. Use Value: 0.3 V VCE(sat) ensures >98% coil voltage delivery, improving contact reliability and reducing self-heating. | Use Scenario: High-efficiency 12 V to 5 V buck converter operating at 200 kHz in industrial sensor modules. IC Role / Device Role / Timing Role: Main power switch controlling energy transfer from input to output inductor-capacitor network. Use Value: 30 MHz fT and sub-μs switching times minimize dead-time losses and support stable loop response. |
| Inverter Half-Bridge Stage | Motor Control Interface |
Use Scenario: Low-side switch in 24 V BLDC motor gate driver stage handling peak currents up to 4 A. IC Role / Device Role / Timing Role: Synchronized switching element turning on/off motor phase winding current during commutation. Use Value: 5 A continuous rating and 9 A pulse capability accommodate motor startup surges without thermal runaway. | Use Scenario: Isolated interface between microcontroller and 12 V solenoid actuator in HVAC damper control. IC Role / Device Role / Timing Role: Level-shifting buffer providing galvanically isolated current gain for digital control signals. Use Value: hFE ≥100 at 1 A guarantees sufficient drive margin even with aging or temperature drift. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar NPN power switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| MJD127G | VCEO = 60 V, IC = 2 A, TO-263 package; lower current rating but higher voltage margin | Better suited for 48 V bus systems where overvoltage protection is prioritized over current capacity | Select MJD127G when VCEO > 50 V is required and PCB space allows surface-mount layout |
| 2SC5200 | VCEO = 230 V, IC = 15 A, TO-3P package; significantly higher voltage/current but larger footprint and slower fT (3 MHz) | Targeted at audio amplifier output stages and high-voltage inverters, not optimized for fast digital switching | Choose 2SC5200 only when >100 V breakdown or >10 A current is mandatory; avoid for 50 V/5 A switching due to excess cost and size |
Compared with MJD127G and 2SC5200, the 2SD1060R-1E delivers optimal balance of 50 V rating, 5 A capability, 0.3 V saturation, and TO-220 thermal performance-making it the preferred choice for cost-sensitive, medium-power industrial switching where footprint and thermal management are constrained.
Availability
2SD1060R-1E is available at Aetrix Electronics and suitable for relay drivers, DC-DC converters, motor control interfaces, and inverter half-bridge stages requiring stable component supply and consistent parametric binning.
Supply support for 2SD1060R-1E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
onsemi (formerly ON Semiconductor) is a global semiconductor supplier focused on energy-efficient innovation for automotive, industrial, cloud, and IoT applications.
The 2SD1060R-1E belongs to onsemi's legacy power bipolar transistor family designed specifically for robust, high-current switching in industrial controls, power supplies, and motor drives where low VCE(sat) and proven reliability are critical.
FAQ
What is the maximum continuous collector current rating for the 2SD1060R-1E?
The 2SD1060R-1E is rated for 5 A continuous collector current (IC) at case temperature Tc = 25°C. This rating decreases linearly with rising case temperature, reaching zero at Tc ≈ 125°C. Derating curves in the official datasheet (ON Semiconductor document EN686K) confirm usable current down to ~2.5 A at Tc = 80°C. The 2SD1060R-1E must be mounted on an appropriate heatsink to sustain full 5 A operation in real-world conditions.
Does the 2SD1060R-1E have a guaranteed minimum hFE at 2 A collector current?
Yes - the 2SD1060R-1E guarantees hFE ≥ 80 at VCE = 2 V and IC = 2 A (designated hFE2 in the datasheet). This is confirmed across both R and S gain bins. The 2SD1060R-1E also provides hFE ≥ 100 at IC = 1 A, supporting conservative base drive design for reliable saturation under varying temperature and aging conditions.
Is the collector terminal of the 2SD1060R-1E electrically connected to the metal tab?
Yes - in the TO-220-3L package used by the 2SD1060R-1E, pin 2 (collector) is internally bonded to the metal mounting tab. This requires electrical isolation (e.g., mica washer + shoulder washer) when mounting to a grounded heatsink. Failure to insulate may short the collector to chassis ground, causing immediate device failure. The 2SD1060R-1E datasheet explicitly states this configuration in the "Electrical Connection" diagram.
What is the typical storage time (tstg) of the 2SD1060R-1E under standard test conditions?
The 2SD1060R-1E has a typical storage time (tstg) of 1.4 μs, measured using the standardized switching test circuit defined in the datasheet (VCC = 20 V, RL = 10 Ω, IC = 2 A, IB1/IB2 ratio = 10). This value reflects minority-carrier removal delay during turn-off and directly impacts maximum usable switching frequency in hard-switched applications. The 2SD1060R-1E's 1.4 μs tstg supports clean commutation up to ~500 kHz with appropriate base drive optimization.
Can the 2SD1060R-1E be used in avalanche mode for inductive load suppression?
No - the 2SD1060R-1E is not rated or characterized for repetitive avalanche operation. Its absolute maximum V(BR)CEO = 50 V is a DC breakdown limit under specified test conditions, not an energy-rated avalanche capability. Using the 2SD1060R-1E without external clamping (e.g., flyback diode or RC snubber) across inductive loads risks single-pulse failure. Designers must implement external protection to keep VCE below 50 V during turn-off transients.
2SD1060R-1E Specifications
- Product attributes
- Attribute value
- Manufacturer:
- onsemi
- Series:
- -
- Package/Case:
- TO-220-3
- Packaging:
- Tube
- Product Status:
- Obsolete
- Transistor Type:
- NPN
- Current - Collector (Ic) (Max):
- 5 A
- Voltage - Collector Emitter Breakdown (Max):
- 50 V
- Vce Saturation (Max) @ Ib, Ic:
- 300mV @ 300mA, 3A
- Current - Collector Cutoff (Max):
- 100µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce:
- 100 @ 1A, 2V
- Power - Max:
- 1.75 W
- Frequency - Transition:
- 30MHz
- Operating Temperature:
- 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-220-3
2SD1060R-1E FAQ
1.How can I place an order for 2SD1060R-1E through Aetrix?
Please submit a Request for Quotation (RFQ) for 2SD1060R-1E on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 2SD1060R-1E reliable?
The price and inventory of 2SD1060R-1E are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 2SD1060R-1E is usually 5 days.
3.What payment methods are accepted for 2SD1060R-1E?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 2SD1060R-1E transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 2SD1060R-1E?
2SD1060R-1E orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 2SD1060R-1E order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 2SD1060R-1E?
For technical support, including 2SD1060R-1E datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 2SD1060R-1E requirements.
6.How does Aetrix verify that 2SD1060R-1E is sourced from the original manufacturer or authorized distributors?
All 2SD1060R-1E products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 2SD1060R-1E meets industry standards.
7.What is the process for return or replacement of 2SD1060R-1E?
All 2SD1060R-1E units undergo pre-shipment inspection (PSI). If there is an issue with 2SD1060R-1E, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 2SD1060R-1E part is unused and in its original packaging.
Return procedure for 2SD1060R-1E:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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