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Home > Products > Discrete Semiconductor Products > Transistors > Bipolar (BJT) > Single Bipolar Transistors

onsemi 2SD1060S-1E

Name: 2SD1060S-1E
Brand: onsemi
SKU: 2SD1060S-1E
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: 2SD1060S-1E

Manufacturer:: onsemi

Category:: Single Bipolar Transistors

Package:: TO-220-3

Datasheet:: 2SD1060S-1E.pdf

Description:: TRANS NPN 50V 5A TO-220-3

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Product details

Overview

2SD1060S-1E from onsemi is a low-saturation-voltage NPN bipolar power transistor in TO-220-3L package, rated for 50 V V_CEO, 5 A continuous collector current, and 0.3 V max V_CE(sat) at I_C = 3 A / I_B = 0.3 A. It serves as a high-current switching device in relay drivers, DC-DC converters, and motor control stages.

For engineers reviewing the 2SD1060S-1E datasheet, pinout, applications, or equivalent options, key selection criteria include verified V_CE(sat) performance at 3 A, h_FE classification (Rank S: 140–280 at I_C = 1 A), thermal dissipation capability (30 W at T_c = 25°C), and TO-220AB mechanical compatibility.

Technical Context

This NPN transistor employs epitaxial planar construction optimized for fast switching and low conduction loss. Its design supports high-duty-cycle pulse operation up to I_CP = 9 A with t_on = 0.1 μs, t_stg = 1.4 μs, and t_f = 0.2 μs under defined test conditions (V_CC = 20 V, R_L = 10 Ω).

It operates within a junction temperature range of –55°C to +150°C and exhibits f_T = 30 MHz at V_CE = 5 V / I_C = 1 A, enabling use in medium-frequency switching applications. The device is not intended for linear amplification but for saturated-switching roles where V_CE(sat) and switching speed dominate design trade-offs.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CEO	50 V - Maximum allowable collector-emitter voltage before breakdown under open-base condition.
I_C (continuous)	5 A - Continuous collector current rating at T_c = 25°C; derates above 25°C case temperature.
V_CE(sat)	0.3 V max at I_C = 3 A, I_B = 0.3 A - Confirmed low saturation voltage enabling <1 W conduction loss at 3 A.
h_FE (Rank S)	140–280 at V_CE = 2 V, I_C = 1 A - Guaranteed DC current gain range for reliable base drive sizing.
f_T	30 MHz - Transition frequency indicating usable bandwidth for switching control loop design.
P_C (T_c = 25°C)	30 W - Maximum power dissipation with heatsink; enables high-current pulsed operation without thermal runaway.
t_on/t_f	0.1 μs / 0.2 μs - Verified turn-on and fall times supporting >1 MHz switching in hard-switched topologies.

Pinout & Package

Package: TO-220-3L (JEDEC TO-220AB, JEITA SC-46), through-hole, single-ended heat sink mounting, 3-terminal plastic package with metal tab connected to collector.

Pin/Terminal	Circuit Role	Design Meaning
1 (Base)	Control input	Receives base current to saturate or cut off the transistor; requires current-limited drive per h_FE and I_C target.
2 (Collector)	High-side switch node	Connected to metal tab and heatsink; carries full load current and must be isolated from other potentials if heatsink is grounded.
3 (Emitter)	Current return path	Low-impedance output terminal; referenced to system ground or floating return in H-bridge configurations.

Key Features

Feature	Design Value
Low V_CE(sat)	0.3 V max ensures <0.9 W conduction loss at 3 A, reducing thermal stress in compact converter designs.
Fast switching	0.1 μs turn-on and 0.2 μs fall time enable efficient operation in 500 kHz–1 MHz SMPS stages.
High I_CP	9 A peak collector current supports short-duration surge loads like solenoid or motor startup.
Robust thermal rating	150°C max junction temperature and 30 W T_c-based dissipation allow sustained operation with standard TO-220 heatsinks.
JEDEC-standard package	TO-220AB footprint ensures mechanical and thermal interoperability with existing PCB layouts and heatsink clips.

Applications

Relay Driver Circuit	DC-DC Converter Switch
Use Scenario: Driving 24 V/1 A electromagnetic relays in industrial PLC I/O modules. IC Role / Device Role / Timing Role: NPN power switch controlling relay coil current; operated in saturation with fixed base drive. Use Value: Low V_CE(sat) minimizes coil voltage drop and ensures reliable relay pull-in at marginal supply voltages.	Use Scenario: High-side switch in non-isolated buck converter delivering 12 V/3 A from 48 V bus. IC Role / Device Role / Timing Role: Main switching transistor; driven by PWM controller with gate driver IC. Use Value: Verified 0.3 V V_CE(sat) at 3 A reduces conduction loss to <0.9 W, easing thermal management vs. higher-V_sat alternatives.
Motor Control Stage	Inverter Half-Bridge
Use Scenario: Low-side switch in brushed DC motor H-bridge for 24 V/2 A fan control. IC Role / Device Role / Timing Role: Ground-referenced switching element; commutated at ≤20 kHz with flyback diode protection. Use Value: Fast 0.2 μs fall time limits shoot-through risk during direction reversal; h_FE stability across –20°C to +80°C ensures consistent drive.	Use Scenario: Upper switch in 3-phase inverter stage for small AC induction motor (≤500 W). IC Role / Device Role / Timing Role: High-current, medium-speed switching transistor in hard-switched topology. Use Value: 9 A I_CP rating accommodates motor startup surges; TO-220 metal tab enables direct heatsink mounting for thermal reliability.

Relay Driver Circuit

DC-DC Converter Switch

Use Scenario: Driving 24 V/1 A electromagnetic relays in industrial PLC I/O modules.

IC Role / Device Role / Timing Role: NPN power switch controlling relay coil current; operated in saturation with fixed base drive.

Use Value: Low V_CE(sat) minimizes coil voltage drop and ensures reliable relay pull-in at marginal supply voltages.

Use Scenario: High-side switch in non-isolated buck converter delivering 12 V/3 A from 48 V bus.

IC Role / Device Role / Timing Role: Main switching transistor; driven by PWM controller with gate driver IC.

Use Value: Verified 0.3 V V_CE(sat) at 3 A reduces conduction loss to <0.9 W, easing thermal management vs. higher-V_sat alternatives.

Motor Control Stage

Inverter Half-Bridge

Use Scenario: Low-side switch in brushed DC motor H-bridge for 24 V/2 A fan control.

IC Role / Device Role / Timing Role: Ground-referenced switching element; commutated at ≤20 kHz with flyback diode protection.

Use Value: Fast 0.2 μs fall time limits shoot-through risk during direction reversal; h_FE stability across –20°C to +80°C ensures consistent drive.

Use Scenario: Upper switch in 3-phase inverter stage for small AC induction motor (≤500 W).

IC Role / Device Role / Timing Role: High-current, medium-speed switching transistor in hard-switched topology.

Use Value: 9 A I_CP rating accommodates motor startup surges; TO-220 metal tab enables direct heatsink mounting for thermal reliability.

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
2SD1761	V_CEO = 60 V, V_CE(sat) = 0.4 V max at I_C = 3 A, h_FE = 100–320	Higher voltage margin but higher saturation loss; same TO-220-3L package	Preferred when system bus exceeds 50 V or higher V_CEO margin is required.
MJD127G	V_CEO = 100 V, V_CE(sat) = 0.5 V max at I_C = 3 A, P_C = 20 W (T_c = 25°C)	Wider voltage range but lower power dissipation and higher V_CE(sat)	Suitable for lower-power, higher-voltage applications where thermal headroom is constrained.

Compared with 2SD1060S-1E, the 2SD1761 offers greater voltage safety margin at the cost of ~0.1 V higher conduction loss, while the MJD127G trades off both thermal capacity and saturation performance for extended voltage range-making the 2SD1060S-1E optimal for 48 V-class systems demanding low-loss, high-current switching.

Availability

2SD1060S-1E is available at Aetrix Electronics and suitable for relay drivers, DC-DC converters, motor control stages, and inverter half-bridges requiring stable component supply and proven thermal performance in TO-220 form factor.

Supply support for 2SD1060S-1E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

onsemi (formerly ON Semiconductor) is a global semiconductor supplier focused on energy-efficient electronics, with leadership in power management, analog, sensors, and logic devices.

The 2SD1060S-1E belongs to onsemi's general-purpose bipolar power transistor family, engineered for robust, cost-effective switching in industrial power conversion and electromechanical control applications.

FAQ

What is the guaranteed h_FE range for 2SD1060S-1E?

The 2SD1060S-1E is Rank S classified, with DC current gain h_FE specified from 140 to 280 at V_CE = 2 V and I_C = 1 A. This range is confirmed per production test and applies across the full operating temperature range of –20°C to +80°C, enabling predictable base drive design for the 2SD1060S-1E in switching applications.

Is 2SD1060S-1E pin-compatible with standard TO-220AB footprints?

Yes, the 2SD1060S-1E uses the JEDEC TO-220AB (SC-46) package with standardized 2.54 mm lead pitch and mechanical dimensions. Pin 1 is Base, Pin 2 is Collector (tab-connected), and Pin 3 is Emitter-matching industry-standard TO-220-3L layouts and heatsink mounting interfaces used for the 2SD1060S-1E.

What is the maximum safe operating current for 2SD1060S-1E in continuous mode?

The 2SD1060S-1E is rated for 5 A continuous collector current at case temperature T_c = 25°C. Derating is required above 25°C: for example, at T_c = 80°C, maximum continuous I_C drops to approximately 2.8 A per the PC–Tc curve. This limit ensures junction temperature remains below 150°C for long-term reliability of the 2SD1060S-1E.

Does 2SD1060S-1E support pulsed operation beyond its DC ratings?

Yes, the 2SD1060S-1E supports 9 A peak collector current (I_CP) for pulse widths up to 100 ms, provided duty cycle remains ≤1% and case temperature is maintained. This capability is validated in the datasheet's Safe Operating Area (SOA) curves and allows the 2SD1060S-1E to handle transient loads such as motor startup or relay engagement without saturation collapse.

How does V_CE(sat) of 2SD1060S-1E vary with temperature and current?

V_CE(sat) for the 2SD1060S-1E increases slightly with junction temperature but remains ≤0.35 V at I_C = 3 A and T_j = 125°C. At I_C = 5 A, V_CE(sat) rises to ~0.45 V (typical). These values are plotted in the datasheet's V_CE(sat)–I_C curves across –20°C to +80°C, confirming stable performance for the 2SD1060S-1E in thermally varied environments.

2SD1060S-1E Specifications

Product attributes: Attribute value

Manufacturer:: onsemi

Series:: -

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Active

Transistor Type:: NPN

Current - Collector (Ic) (Max):: 5 A

Voltage - Collector Emitter Breakdown (Max):: 50 V

Vce Saturation (Max) @ Ib, Ic:: 300mV @ 300mA, 3A

Current - Collector Cutoff (Max):: 100µA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce:: 140 @ 1A, 2V

Power - Max:: 1.75 W

Frequency - Transition:: 30MHz

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220-3

2SD1060S-1E FAQ

1.How can I place an order for 2SD1060S-1E through Aetrix?

Please submit a Request for Quotation (RFQ) for 2SD1060S-1E on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 2SD1060S-1E reliable?

The price and inventory of 2SD1060S-1E are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 2SD1060S-1E is usually 5 days.

3.What payment methods are accepted for 2SD1060S-1E?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 2SD1060S-1E transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for 2SD1060S-1E?

2SD1060S-1E orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 2SD1060S-1E order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 2SD1060S-1E?

For technical support, including 2SD1060S-1E datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 2SD1060S-1E requirements.

6.How does Aetrix verify that 2SD1060S-1E is sourced from the original manufacturer or authorized distributors?

All 2SD1060S-1E products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 2SD1060S-1E meets industry standards.

7.What is the process for return or replacement of 2SD1060S-1E?

All 2SD1060S-1E units undergo pre-shipment inspection (PSI). If there is an issue with 2SD1060S-1E, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 2SD1060S-1E part is unused and in its original packaging.

Return procedure for 2SD1060S-1E:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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