onsemi 2SD1062R

Overview

2SD1062R from onsemi is an NPN epitaxial planar silicon power transistor designed for high-current switching applications, with V_CEO = 50 V, I_C = 12 A continuous, P_C = 40 W at T_c = 25°C, and V_CE(sat) ≤ 0.4 V at I_C = 6 A / I_B = 0.3 A - used in relay drivers, DC-DC converters, and high-speed inverters.

For engineers reviewing the 2SD1062R datasheet, pinout, applications, or equivalent options, key selection criteria include saturation voltage under high-current drive, SOA robustness at elevated case temperature, h_FE consistency across 1–5 A range, and TO-220 mechanical compatibility with heatsink mounting requirements.

Technical Context

The 2SD1062R operates as a medium-power NPN bipolar junction transistor optimized for linear and saturated switching modes. Its design emphasizes low V_CE(sat) (≤0.4 V) at I_C/I_B = 20, wide Safe Operating Area (SOA), and f_T = 10 MHz for reliable performance in hard-switched topologies up to ~100 kHz.

It shares die and package architecture with the complementary PNP 2SB826, enabling matched pair use in push-pull and H-bridge configurations. Thermal resistance R_θJC is implied by P_C = 40 W at T_c = 25°C and T_j(max) = 150°C, supporting operation with moderate heatsinking in industrial power stages.

Key Specifications

Pinout & Package

2SD1062R is housed in a through-hole TO-220AB package (SANYO standard outline, 18.0 mm × 10.2 mm × 4.5 mm), with collector tab electrically connected to pin 2 and thermally coupled to heatsink via mounting hole.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current NPN switching applications.

Compared with 2SD1761 and MJD127, the 2SD1062R offers the best balance of low saturation voltage, TO-220 thermal interface, and 48 V system compatibility - making it optimal for cost-sensitive, thermally constrained relay and converter applications where 50 V rating is sufficient.

Availability

2SD1062R is available at Aetrix Electronics and suitable for relay drivers, DC-DC converters, and high-speed inverters requiring stable component supply and long-term industrial availability.

Supply support for 2SD1062R includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

onsemi (formerly ON Semiconductor) is a global semiconductor manufacturer specializing in energy-efficient power, analog, sensor, and connectivity solutions for automotive, industrial, and cloud infrastructure markets.

The 2SD1062R belongs to onsemi's legacy bipolar power transistor product line, engineered specifically for robust, high-current switching in industrial controls, power supplies, and motor drive circuits where reliability and thermal resilience are critical.

FAQ

What is the maximum continuous collector current rating for the 2SD1062R?

The 2SD1062R has a maximum continuous collector current (I_C) rating of 12 A at case temperature T_c = 25°C. This rating assumes proper heatsinking; derating is required above 25°C per the PC–Tc curve in the datasheet. At T_c = 100°C, the usable I_C drops to approximately 6.5 A to maintain safe junction temperature.

Is the 2SD1062R pin-compatible with the 2SB826 PNP transistor?

No - the 2SD1062R (NPN) and 2SB826 (PNP) share the same TO-220AB package outline and pin numbering (Base–Collector–Emitter), but their internal polarity and biasing requirements differ. While they are complementary and often used together in push-pull stages, direct substitution without circuit redesign is not possible due to reversed voltage/current polarities.

Does the 2SD1062R require a minimum base current to achieve full saturation?

Yes - the 2SD1062R achieves guaranteed V_CE(sat) ≤ 0.4 V only when driven with I_B ≥ 0.3 A at I_C = 6 A (i.e., I_C/I_B ≤ 20). For reliable saturation across process variation, design practice recommends I_C/I_B = 10–15, meaning ≥0.6 A base drive for 6 A collector load.

Can the 2SD1062R be used in linear amplifier applications?

The 2SD1062R is characterized and rated for switching operation, not linear amplification. While its f_T = 10 MHz and h_FE support limited small-signal gain, its SOA and thermal design prioritize pulsed/saturated duty cycles. Linear use risks secondary breakdown and is not supported by onsemi's published safe operating area curves.

What is the junction-to-case thermal resistance (R_θJC) of the 2SD1062R?

onsemi does not publish R_θJC explicitly for the 2SD1062R, but it can be inferred from P_C = 40 W at T_c = 25°C and T_j(max) = 150°C: R_θJC ≈ (150 − 25)°C / 40 W = 3.13°C/W. This value aligns with typical TO-220AB devices and confirms suitability for bolt-down heatsinks with thermal interface material.