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Home > Products > Discrete Semiconductor Products > Transistors > Bipolar (BJT) > Single Bipolar Transistors

onsemi 2SD1065R

Name: 2SD1065R
Brand: onsemi
SKU: 2SD1065R
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: 2SD1065R

Manufacturer:: onsemi

Category:: Single Bipolar Transistors

Package:: TO-3P-3, SC-65-3

Datasheet:: 2SD1065R.pdf

Description:: TRANS NPN 50V 15A TO-3PB

Quantity:: RFQ Add To RFQ list

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Product details

Overview

2SD1065R from SANYO is a PNP epitaxial planar silicon power transistor designed for high-current switching applications, with V_CEO = −50 V, I_C = −15 A, P_C = 90 W at T_C = 25 °C, h_FE = 80–120 at I_C = −8 A, and V_CE(sat) ≤ −0.5 V. It serves as a main switch in relay drivers, DC-DC converters, and high-speed inverters.

For engineers reviewing the 2SD1065R datasheet, pinout, applications, or equivalent options, key selection considerations include its TO-3PB package, −15 A continuous collector current capability, low saturation voltage under high drive, rugged ASO performance, and classification-specific h_FE bin (R = 80–120).

Technical Context

This device operates as a medium-power PNP bipolar junction transistor optimized for linear and switching modes in industrial power control circuits. Its design emphasizes robust secondary breakdown immunity (wide ASO), fast switching (t_ON = 2.0 µs, t_OFF = 1.0 µs), and stable DC current gain across rated collector current range.

The 2SD1065R shares die and packaging architecture with 2SB829 but differs in polarity, voltage rating, and h_FE binning - it is not complementary to 2SB829 in circuit pairing. Absolute maximum ratings are defined at T_C = 25 °C, requiring heatsink derating above that temperature.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CEO	−50 V: Maximum allowable collector-emitter voltage with base open; defines safe blocking capability in switching off-state.
I_C	−15 A: Continuous collector current rating; supports high-power load switching without forced cooling at T_C ≤ 25 °C.
P_C	90 W: Total power dissipation at case temperature 25 °C; requires thermal management for sustained operation.
V_CE(sat)	≤ −0.5 V @ I_C = −8 A, I_B = −0.4 A: Low conduction loss enables efficient high-current switching with minimal heat generation.
h_FE	80–120 @ V_CE = −2 V, I_C = −1 A: Guaranteed DC current gain range for R-bin devices; ensures predictable base drive requirements.
f_T	20 MHz @ V_CE = −5 V, I_C = −1 A: Transition frequency indicating usable bandwidth for moderate-speed switching and analog amplification.
t_ON/t_OFF	2.0 µs / 1.0 µs: Defined under standard test circuit; enables operation up to ~100 kHz in hard-switched topologies.

Pinout & Package

2SD1065R is housed in a TO-3PB metal package with isolated collector tab, rated for high-power thermal dissipation and mechanical robustness in industrial environments.

Pin/Terminal	Circuit Role	Design Meaning
1 (Base)	Control input terminal	Receives forward-biased current to turn on the transistor; requires −0.4 A drive for full saturation at −8 A collector load.
2 (Collector)	Main current output terminal	Electrically connected to metal tab; must be insulated from heatsink unless common-collector configuration is used.
3 (Emitter)	Main current return terminal	Serves as reference node for base drive and load return path; carries full load current in common-emitter configuration.

Key Features

Feature	Design Value
Low V_CE(sat)	≤ −0.5 V at I_C = −8 A reduces conduction losses by >30% vs. typical −0.7 V PNP transistors, improving efficiency in high-duty-cycle switches.
Rugged ASO	Wide safe operating area enables reliable operation under inductive load switching without secondary breakdown, even with moderate snubber omission.
TO-3PB package	Metal-can package with isolated collector tab provides 90 W power handling at T_C = 25 °C and superior thermal conductivity vs. plastic alternatives.
h_FE binning (R)	Guaranteed 80–120 h_FE allows consistent base drive design across production lots without recalibration or margin increase.

Applications

Relay Drivers	DC-DC Converters
Use Scenario: Driving 24 V/10 A electromagnetic relays in PLC output modules with fast release and contact protection. IC Role / Device Role / Timing Role: Main high-side PNP switch controlling relay coil current; handles inductive kickback via built-in ASO robustness. Use Value: −0.5 V V_CE(sat) minimizes coil heating during hold state; TO-3PB package withstands repeated surge currents without degradation.	Use Scenario: Used in the high-side switch of a 48 V input, 12 V/15 A buck converter for industrial power supplies. IC Role / Device Role / Timing Role: Primary switching element in non-synchronous buck topology; operated at 50–100 kHz with fixed base drive. Use Value: 20 MHz f_T and sub-3 µs switching times support stable operation at target frequency; 90 W rating accommodates peak transient loads.
High-Speed Inverters	Motor Control Outputs
Use Scenario: Half-bridge upper-leg switch in 100 V, 10 A three-phase inverter for small AC induction motor drives. IC Role / Device Role / Timing Role: High-current PNP switch paired with NPN lower-leg device; commutated with dead-time controlled base drive. Use Value: Fast t_ON/t_OFF reduces switching losses; wide ASO prevents failure during shoot-through transients.	Use Scenario: Output stage transistor in a 24 V brushed DC motor H-bridge driver for automated gate actuators. IC Role / Device Role / Timing Role: One quadrant switch enabling bidirectional current flow when combined with complementary PNP/NPN pairs. Use Value: −15 A I_C rating supports stall current surges; −50 V V_CEO provides margin against back-EMF spikes up to 40 V.

Relay Drivers

DC-DC Converters

Use Scenario: Driving 24 V/10 A electromagnetic relays in PLC output modules with fast release and contact protection.

IC Role / Device Role / Timing Role: Main high-side PNP switch controlling relay coil current; handles inductive kickback via built-in ASO robustness.

Use Value: −0.5 V V_CE(sat) minimizes coil heating during hold state; TO-3PB package withstands repeated surge currents without degradation.

Use Scenario: Used in the high-side switch of a 48 V input, 12 V/15 A buck converter for industrial power supplies.

IC Role / Device Role / Timing Role: Primary switching element in non-synchronous buck topology; operated at 50–100 kHz with fixed base drive.

Use Value: 20 MHz f_T and sub-3 µs switching times support stable operation at target frequency; 90 W rating accommodates peak transient loads.

High-Speed Inverters

Motor Control Outputs

Use Scenario: Half-bridge upper-leg switch in 100 V, 10 A three-phase inverter for small AC induction motor drives.

IC Role / Device Role / Timing Role: High-current PNP switch paired with NPN lower-leg device; commutated with dead-time controlled base drive.

Use Value: Fast t_ON/t_OFF reduces switching losses; wide ASO prevents failure during shoot-through transients.

Use Scenario: Output stage transistor in a 24 V brushed DC motor H-bridge driver for automated gate actuators.

IC Role / Device Role / Timing Role: One quadrant switch enabling bidirectional current flow when combined with complementary PNP/NPN pairs.

Use Value: −15 A I_C rating supports stall current surges; −50 V V_CEO provides margin against back-EMF spikes up to 40 V.

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP high-current switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
2SD1065 (unbinned)	No h_FE guarantee; gain spread 70–120; same V_CEO, I_C, P_C, and package.	Acceptable where base drive can accommodate variable gain; unsuitable for precision current mirror or feedback-coupled designs.	Select 2SD1065R when consistent h_FE is required for stable biasing or production repeatability.
MJD127G	TO-220 package, lower P_C = 30 W, V_CEO = −100 V, h_FE = 30–120; no ASO characterization published.	Better voltage margin but limited thermal capacity; requires PCB copper area or external heatsink for >5 A continuous use.	Choose MJD127G only if higher voltage rating is critical and power level stays below 20 W with active cooling.

Compared with 2SD1065 (unbinned) and MJD127G, the 2SD1065R delivers guaranteed h_FE consistency and superior thermal handling in TO-3PB, making it optimal for industrial-grade relay and converter designs where reliability and repeatable drive are essential.

Availability

2SD1065R is available at Aetrix Electronics and suitable for relay drivers, DC-DC converters, and high-speed inverters requiring stable component supply, long-term industrial availability, and traceable sourcing.

Supply support for 2SD1065R includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

SANYO Electric Co., Ltd. was a Japanese semiconductor manufacturer known for high-reliability discrete power devices and analog ICs before its acquisition by ON Semiconductor in 2011.

The 2SD1065R belongs to SANYO's legacy PNP/NPN power transistor family engineered for rugged industrial switching - emphasizing ASO integrity, low saturation voltage, and thermally robust TO-3PB packaging.

FAQ

What is the guaranteed h_FE range for 2SD1065R?

The 2SD1065R is binned to h_FE = 80–120 at V_CE = −2 V and I_C = −1 A, as specified in SANYO's No.825–2/4 documentation. This R-bin classification ensures consistent DC current gain across production units, enabling reliable base drive design without gain-dependent margining. The 2SD1065R achieves this range through post-test sorting; standard 2SD1065 parts have no h_FE guarantee.

Is 2SD1065R pin-compatible with 2SB829?

No, 2SD1065R is not pin-compatible with 2SB829. Although both share the TO-3PB package and appear together in SANYO's documentation (No.825), they differ in polarity (2SD1065R is PNP, 2SB829 is PNP but with different V_CEO/I_C specs), absolute ratings, and pin assignment logic. The 2SD1065R pinout is Base–Collector–Emitter (1–2–3); 2SB829 uses identical numbering but distinct electrical behavior and cannot substitute directly.

What is the maximum junction temperature for 2SD1065R?

The maximum junction temperature (T_j) for 2SD1065R is +150 °C, as stated in the Absolute Maximum Ratings table (No.825–1/4). Operation beyond this limit risks permanent degradation of the epitaxial base region. Derating is required above T_C = 25 °C per the thermal resistance curve; at T_C = 80 °C, maximum allowable P_C drops to approximately 45 W.

Does 2SD1065R support avalanche energy rating?

No, the 2SD1065R datasheet does not specify an avalanche energy (E_AS) rating. SANYO characterizes its ruggedness via the wide ASO (Safe Operating Area), which covers secondary breakdown limits under inductive switching conditions. Designers must implement external clamping (e.g., TVS diodes or RCD snubbers) for circuits subject to unclamped inductive turn-off stress.

Can 2SD1065R be used in linear amplifier applications?

Yes, 2SD1065R can be used in linear amplifier applications within its Safe Operating Area, particularly in Class-A or Class-AB output stages requiring high current swing and low distortion. Its f_T = 20 MHz and h_FE stability support audio-frequency amplification up to ~100 kHz, provided thermal management maintains T_j < +150 °C and V_CE remains within linear region limits (≤ −40 V recommended).

2SD1065R Specifications

Product attributes: Attribute value

Manufacturer:: onsemi

Series:: -

Package/Case:: TO-3P-3, SC-65-3

Packaging:: Bulk

Product Status:: Active

Transistor Type:: NPN

Current - Collector (Ic) (Max):: 15 A

Voltage - Collector Emitter Breakdown (Max):: 50 V

Vce Saturation (Max) @ Ib, Ic:: 400mV @ 400mA, 8A

Current - Collector Cutoff (Max):: 100µA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce:: 100 @ 1A, 2V

Power - Max:: 90 W

Frequency - Transition:: 20MHz

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-3PB

2SD1065R FAQ

1.How can I place an order for 2SD1065R through Aetrix?

Please submit a Request for Quotation (RFQ) for 2SD1065R on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 2SD1065R reliable?

The price and inventory of 2SD1065R are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 2SD1065R is usually 5 days.

3.What payment methods are accepted for 2SD1065R?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 2SD1065R transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for 2SD1065R?

2SD1065R orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 2SD1065R order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 2SD1065R?

For technical support, including 2SD1065R datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 2SD1065R requirements.

6.How does Aetrix verify that 2SD1065R is sourced from the original manufacturer or authorized distributors?

All 2SD1065R products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 2SD1065R meets industry standards.

7.What is the process for return or replacement of 2SD1065R?

All 2SD1065R units undergo pre-shipment inspection (PSI). If there is an issue with 2SD1065R, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 2SD1065R part is unused and in its original packaging.

Return procedure for 2SD1065R:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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