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Home > Products > Discrete Semiconductor Products > Transistors > Bipolar (BJT) > Single Bipolar Transistors

onsemi 2SD1145F

Name: 2SD1145F
Brand: onsemi
SKU: 2SD1145F
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: 2SD1145F

Manufacturer:: onsemi

Category:: Single Bipolar Transistors

Package:: TO-226-3, TO-92-3 Long Body

Datasheet:: 2SD1145F.pdf

Description:: TRANS NPN 20V 5A 3-MP

Quantity:: RFQ Add To RFQ list

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Product details

Overview

2SD1145F from SANYO is an NPN epitaxial planar silicon transistor designed for high-current switching in driver stages, with IC = 5 A, V_CEO = 60 V, V_CBO = 60 V, V_EBO = 6 V, and P_C = 0.9 W at T_a = 25°C. It serves as a robust power switch in relay, lamp, strobe, and DC-DC converter circuits.

For engineers reviewing the 2SD1145F datasheet, pinout, applications, or equivalent options, key selection criteria include saturation voltage (V_CE(sat) = 0.5 V @ I_C = 3 A, I_B = 60 mA), DC current gain (h_FE = 100–200 @ I_C = 0.5 A), f_T = 120 MHz, ASO compliance, and TO-220F package thermal performance.

Technical Context

This device operates as a medium-power NPN bipolar junction transistor optimized for linear and pulse-driven switching. Its epitaxial planar structure enables stable h_FE across temperature and high safe operating area (ASO) up to 100 V × 5 A in pulse mode.

It features low V_CE(sat) and V_BE(sat) - 0.5 V and 1.5 V respectively under I_C/I_B = 50 - supporting efficient drive in motor and solenoid control where base drive loss must be minimized.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CEO	60 V - Maximum collector-emitter voltage before breakdown under open-base condition; defines upper rail limit in switching applications.
I_C (DC)	5 A - Continuous collector current rating; supports sustained load driving without thermal runaway at T_a ≤ 25°C.
V_CE(sat)	0.5 V @ I_C = 3 A, I_B = 60 mA - Low on-state loss enabling <0.15 W conduction loss at 3 A, critical for thermal management.
h_FE	100–200 @ I_C = 0.5 A, V_CE = 2 V - Predictable current amplification for reliable base drive sizing in discrete amplifier/driver stages.
f_T	120 MHz @ V_CE = 10 V, I_C = 50 mA - Supports fast switching up to ~100 kHz PWM with minimal phase lag in gate/base drive paths.
P_C	0.9 W @ T_a = 25°C - Power dissipation limit requiring heatsinking above ~1.5 A continuous operation in ambient air.

Pinout & Package

2SD1145F is housed in a TO-220F (full-pack) plastic package with insulated tab, suitable for direct mounting to heatsinks without electrical isolation hardware.

Pin/Terminal	Circuit Role	Design Meaning
1 (Emitter)	Current sink terminal	Low-impedance return path; connects to ground or low-side reference; requires low-inductance layout for fast switching.
2 (Collector)	Current source terminal	High-current output node; ties to load (e.g., relay coil, motor winding); must handle peak I_CP = 8 A in 100 ms pulses.
3 (Base)	Control input	Current-controlled gate; requires I_B ≥ 60 mA for full saturation at I_C = 3 A; sensitive to ESD and overvoltage.

Key Features

Feature	Design Value
Low saturation voltage	V_CE(sat) = 0.5 V ensures <150 mW conduction loss at 3 A, reducing heatsink requirements in space-constrained drivers.
Wide Safe Operating Area (ASO)	Rated for 100 V × 5 A pulse operation per ITR09970, enabling robust surge handling in inductive load switching.
High DC current gain	h_FE ≥ 100 at 0.5 A allows simplified base drive circuitry using standard logic-level or microcontroller outputs.
High f_T	120 MHz bandwidth supports clean square-wave response in PWM-driven lamp/strobe applications up to 100 kHz.

Applications

Relay Driver	Lamp Driver
Use Scenario: Driving 24 V/1 A electromagnetic relays in industrial PLC I/O modules. IC Role / Device Role / Timing Role: High-current NPN switch controlling relay coil current with fast turn-on/turn-off. Use Value: V_CE(sat) ≤ 0.5 V minimizes coil voltage drop, ensuring reliable relay pull-in even at marginal supply voltages.	Use Scenario: Switching incandescent or halogen lamps (12–24 V, up to 5 A) in automotive lighting systems. IC Role / Device Role / Timing Role: Main power switch in lamp dimming or flash control circuits. Use Value: ASO-rated pulse capability handles inrush currents >6 A during cold filament startup without secondary breakdown.
Strobe Flash Circuit	DC-DC Converter Switch
Use Scenario: Discharging capacitor banks into xenon flash tubes in camera strobes or emergency beacons. IC Role / Device Role / Timing Role: High-speed, high-current discharge switch triggered by microcontroller pulse. Use Value: f_T = 120 MHz and low C_ob = 54 pF enable sub-microsecond turn-off, minimizing tube retrigger delay.	Use Scenario: Primary switching transistor in non-isolated buck converters delivering 5–12 V @ 3 A for embedded power rails. IC Role / Device Role / Timing Role: Pulse-width modulated power switch operating at 20–100 kHz. Use Value: Stable h_FE and low V_CE(sat) reduce switching losses and improve efficiency over wide load ranges.

Relay Driver

Lamp Driver

Use Scenario: Driving 24 V/1 A electromagnetic relays in industrial PLC I/O modules.

IC Role / Device Role / Timing Role: High-current NPN switch controlling relay coil current with fast turn-on/turn-off.

Use Value: V_CE(sat) ≤ 0.5 V minimizes coil voltage drop, ensuring reliable relay pull-in even at marginal supply voltages.

Use Scenario: Switching incandescent or halogen lamps (12–24 V, up to 5 A) in automotive lighting systems.

IC Role / Device Role / Timing Role: Main power switch in lamp dimming or flash control circuits.

Use Value: ASO-rated pulse capability handles inrush currents >6 A during cold filament startup without secondary breakdown.

Strobe Flash Circuit

DC-DC Converter Switch

Use Scenario: Discharging capacitor banks into xenon flash tubes in camera strobes or emergency beacons.

IC Role / Device Role / Timing Role: High-speed, high-current discharge switch triggered by microcontroller pulse.

Use Value: f_T = 120 MHz and low C_ob = 54 pF enable sub-microsecond turn-off, minimizing tube retrigger delay.

Use Scenario: Primary switching transistor in non-isolated buck converters delivering 5–12 V @ 3 A for embedded power rails.

IC Role / Device Role / Timing Role: Pulse-width modulated power switch operating at 20–100 kHz.

Use Value: Stable h_FE and low V_CE(sat) reduce switching losses and improve efficiency over wide load ranges.

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN high-current switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
2SC2625	V_CEO = 50 V (lower), h_FE = 80–160, P_C = 0.75 W	Not suitable for 60 V bus applications; limited ASO at high V_CE	Select only if operating voltage ≤ 45 V and thermal margin permits lower power dissipation.
MJD127G	V_CEO = 80 V (higher), I_C = 8 A, TO-220AB package (non-insulated)	Requires insulating washer for heatsink mounting; higher gain variation (h_FE = 1000–2500)	Preferred for higher-voltage or higher-current designs where base drive can accommodate wider h_FE spread.

Compared with 2SD1145F, 2SC2625 offers lower voltage headroom but similar thermal footprint, while MJD127G provides greater voltage/current margin at the cost of less predictable base drive requirements and non-insulated packaging.

Availability

2SD1145F is available at Aetrix Electronics and suitable for relay drivers, lamp drivers, strobe flash circuits, and DC-DC converter switches requiring stable component supply and long-term industrial availability.

Supply support for 2SD1145F includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

SANYO Electric Co., Ltd. was a Japanese semiconductor manufacturer known for high-reliability discrete devices and analog ICs before its acquisition by Panasonic in 2012.

The 2SD1145F belongs to SANYO's legacy power transistor family engineered specifically for industrial and consumer-grade high-current switching applications demanding low saturation loss and robust ASO performance.

FAQ

What is the maximum continuous collector current rating for the 2SD1145F?

The 2SD1145F has a maximum continuous collector current (I_C) rating of 5 A at T_a = 25°C. Derating is required above this ambient temperature - for example, at 75°C, the usable I_C drops to approximately 3.2 A per the PC–Ta curve (ITR09971). This rating assumes proper heatsinking and operation within the SOA limits defined in the datasheet.

Does the 2SD1145F have an insulated package?

Yes, the 2SD1145F uses a TO-220F (full-pack) package with an electrically insulated metal tab. This allows direct mounting to a common heatsink without requiring additional insulating hardware, simplifying thermal design in compact driver circuits where multiple transistors share a heatsink.

What is the typical DC current gain (h_FE) of the 2SD1145F at 0.5 A collector current?

The 2SD1145F is binned by h_FE: the "F" suffix denotes the 100–200 range at I_C = 0.5 A, V_CE = 2 V, and T_a = 25°C. This binning ensures consistent base drive requirements across production lots, supporting predictable design of discrete driver stages without gain-dependent recalibration.

Can the 2SD1145F be used in pulse applications exceeding its DC current rating?

Yes - the 2SD1145F supports pulsed collector current up to 8 A (I_CP) for durations ≤ 100 ms, provided duty cycle and ambient conditions keep junction temperature within 150°C. The SOA chart (ITR09970) confirms safe operation at 100 V × 5 A in pulse mode, making it suitable for strobe and hammer driver surge loads.

What is the gain-bandwidth product (f_T) of the 2SD1145F, and how does it affect switching performance?

The 2SD1145F has an f_T of 120 MHz at V_CE = 10 V and I_C = 50 mA. This high transition frequency enables fast turn-on/turn-off transitions, supporting clean PWM operation up to ~100 kHz in lamp and motor control. It also reduces base drive impedance sensitivity, improving stability in high-frequency driver designs.

2SD1145F Specifications

Product attributes: Attribute value

Manufacturer:: onsemi

Series:: -

Package/Case:: TO-226-3, TO-92-3 Long Body

Packaging:: Bulk

Product Status:: Active

Transistor Type:: NPN

Current - Collector (Ic) (Max):: 5 A

Voltage - Collector Emitter Breakdown (Max):: 20 V

Vce Saturation (Max) @ Ib, Ic:: 500mV @ 60mA, 3A

Current - Collector Cutoff (Max):: 1µA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce:: 160 @ 500mA, 2V

Power - Max:: 900 mW

Frequency - Transition:: 120MHz

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: 3-MP

2SD1145F FAQ

1.How can I place an order for 2SD1145F through Aetrix?

Please submit a Request for Quotation (RFQ) for 2SD1145F on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 2SD1145F reliable?

The price and inventory of 2SD1145F are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 2SD1145F is usually 5 days.

3.What payment methods are accepted for 2SD1145F?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 2SD1145F transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for 2SD1145F?

2SD1145F orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 2SD1145F order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 2SD1145F?

For technical support, including 2SD1145F datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 2SD1145F requirements.

6.How does Aetrix verify that 2SD1145F is sourced from the original manufacturer or authorized distributors?

All 2SD1145F products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 2SD1145F meets industry standards.

7.What is the process for return or replacement of 2SD1145F?

All 2SD1145F units undergo pre-shipment inspection (PSI). If there is an issue with 2SD1145F, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 2SD1145F part is unused and in its original packaging.

Return procedure for 2SD1145F:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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