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Home > Products > Discrete Semiconductor Products > Transistors > Bipolar (BJT) > Single Bipolar Transistors

onsemi 2SD1145G

Name: 2SD1145G
Brand: onsemi
SKU: 2SD1145G
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: 2SD1145G

Manufacturer:: onsemi

Category:: Single Bipolar Transistors

Package:: TO-226-3, TO-92-3 Long Body

Datasheet:: 2SD1145G.pdf

Description:: TRANS NPN 20V 5A 3-MP

Quantity:: RFQ Add To RFQ list

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Product details

Overview

2SD1145G from SANYO is an NPN epitaxial planar silicon transistor designed for high-current switching in driver circuits, with 5 A collector current rating, 60 V collector-emitter breakdown voltage, and low saturation voltage of 0.5 V at IC = 3 A / IB = 60 mA - used in relay drivers, lamp drivers, and DC-DC converter power stages.

For engineers reviewing the 2SD1145G datasheet, pinout, applications, or equivalent options, key selection criteria include safe operating area (ASO) compliance at 75°C ambient, pulse-rated collector current up to 8 A, and hFE classification (G-grade: hFE = 165–280), critical for robust motor and strobe driver design.

Technical Context

This transistor employs epitaxial planar construction for stable gain and thermal performance, supporting both DC and pulsed operation (100 ms pulses). Its wide ASO enables reliable operation under high-voltage/high-current transients typical in inductive load switching.

Designed for linear and saturated-mode operation, it delivers consistent hFE across IC = 0.5–3 A at VCE = 2 V, with fT = 120 MHz ensuring adequate bandwidth for fast-switching applications like hammer drivers and strobe flash circuits.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CEO	60 V - maximum collector-emitter voltage before breakdown; defines safe DC switching limit for 48 V systems.
I_C	5 A continuous - rated collector current enabling direct drive of medium-power solenoids and lamps.
V_CE(sat)	0.5 V @ IC = 3 A, IB = 60 mA - low conduction loss reduces heat generation in high-duty-cycle drivers.
h_FE (G grade)	165–280 @ V_CE = 2 V, I_C = 0.5 A - tight DC current gain binning ensures predictable base drive requirements.
f_T	120 MHz - sufficient gain-bandwidth for clean turn-off in 10–50 kHz PWM motor/strobe control.
P_C	0.9 W @ T_A = 25°C - thermal derating curve supports 400 mW at 75°C ambient, guiding heatsink selection.
ASO	Defined per ITR09970 - validated safe operating area up to V_CE = 40 V / I_C = 5 A at 25°C, critical for inductive kick protection.

Pinout & Package

2SD1145G is housed in a TO-220AB (JEDEC TO-220) plastic package with integral heatsink tab, compatible with standard mounting hardware and PCB through-hole layouts.

Pin/Terminal	Circuit Role	Design Meaning
1: Emitter	Current sink terminal	Connected to ground or low-side return path; must handle full load current with minimal trace resistance.
2: Collector	Current source terminal	Connected to inductive load (e.g., relay coil); requires flyback diode and layout clearance for voltage spikes.
3: Base	Control input	Driven by TTL/CMOS logic or resistor-limited current source; 60 mA required for full saturation at 3 A load.

Key Features

Feature	Design Value
Low V_CE(sat)	0.5 V at 3 A enables <1.5 W conduction loss, reducing thermal stress in compact relay driver modules.
Wide ASO	Validated safe operating area up to 40 V × 5 A supports unclamped inductive switching without secondary breakdown.
G-grade h_FE binning	h_FE = 165–280 ensures consistent base drive design across production lots for motor control PCBs.
Pulse current capability	8 A peak (100 ms) allows brief overload tolerance during motor startup or lamp ignition surges.

Applications

Relay Driver Module	Lamp Driver Circuit
Use Scenario: Driving 24 V/2 A electromagnetic relays in industrial PLC output cards. IC Role / Device Role / Timing Role: High-current NPN switch controlling relay coil current with fast turn-on/turn-off. Use Value: Low V_CE(sat) minimizes self-heating during continuous duty, extending relay coil life and board reliability.	Use Scenario: Switching 12 V automotive incandescent lamps (e.g., brake lights, dome lights). IC Role / Device Role / Timing Role: Saturated-mode power switch handling inrush current up to 5× steady-state. Use Value: G-grade h_FE ensures stable base drive margin even with aging or temperature drift in vehicle environments.
DC-DC Converter Switch	Strobe Flash Driver
Use Scenario: Low-side switch in non-isolated buck converter for 5 V/3 A auxiliary supply. IC Role / Device Role / Timing Role: PWM-controlled power transistor operating at 25–50 kHz with 50% duty cycle. Use Value: 120 MHz f_T guarantees sharp switching edges, reducing switching losses and EMI generation.	Use Scenario: Triggering xenon flash tubes in portable medical imaging devices. IC Role / Device Role / Timing Role: High-peak-current pulse switch delivering 8 A for ≤100 ms exposure bursts. Use Value: Validated 8 A pulse rating and wide ASO prevent failure during repeated high-energy discharge cycles.

Relay Driver Module

Lamp Driver Circuit

Use Scenario: Driving 24 V/2 A electromagnetic relays in industrial PLC output cards.

IC Role / Device Role / Timing Role: High-current NPN switch controlling relay coil current with fast turn-on/turn-off.

Use Value: Low V_CE(sat) minimizes self-heating during continuous duty, extending relay coil life and board reliability.

Use Scenario: Switching 12 V automotive incandescent lamps (e.g., brake lights, dome lights).

IC Role / Device Role / Timing Role: Saturated-mode power switch handling inrush current up to 5× steady-state.

Use Value: G-grade h_FE ensures stable base drive margin even with aging or temperature drift in vehicle environments.

DC-DC Converter Switch

Strobe Flash Driver

Use Scenario: Low-side switch in non-isolated buck converter for 5 V/3 A auxiliary supply.

IC Role / Device Role / Timing Role: PWM-controlled power transistor operating at 25–50 kHz with 50% duty cycle.

Use Value: 120 MHz f_T guarantees sharp switching edges, reducing switching losses and EMI generation.

Use Scenario: Triggering xenon flash tubes in portable medical imaging devices.

IC Role / Device Role / Timing Role: High-peak-current pulse switch delivering 8 A for ≤100 ms exposure bursts.

Use Value: Validated 8 A pulse rating and wide ASO prevent failure during repeated high-energy discharge cycles.

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN high-current switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
2SD1047	V_CEO = 100 V, I_C = 10 A, TO-3P package - higher voltage/current but larger footprint and thermal mass.	Better suited for 72 V industrial bus switching; over-specified for 24 V relay drivers.	Select 2SD1047 only when >60 V standoff or >5 A continuous current is required; otherwise, 2SD1145G offers better cost and board space efficiency.
MJD127G	V_CEO = 60 V, I_C = 8 A, TO-252 (DPAK) surface-mount - same voltage rating but higher current and SMT-compatible.	Enables automated assembly and denser PCB layouts; lacks TO-220 mechanical robustness for high-vibration environments.	Choose MJD127G for volume SMT production where thermal management uses copper pour; retain 2SD1145G for through-hole reliability in field-serviceable equipment.

Compared with 2SD1047 and MJD127G, the 2SD1145G provides optimal balance of voltage margin, thermal dissipation via TO-220 tab, and proven reliability in legacy relay and lamp driver designs - making it preferred where mechanical serviceability and established qualification matter more than miniaturization or extreme voltage headroom.

Availability

2SD1145G is available at Aetrix Electronics and suitable for relay drivers, lamp drivers, and DC-DC converter power stages requiring stable component supply and long-term industrial lifecycle support.

Supply support for 2SD1145G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

SANYO Electric Co., Ltd. was a Japanese semiconductor manufacturer specializing in power discrete devices, analog ICs, and optoelectronics before its acquisition by Panasonic in 2012.

The 2SD1145G belongs to SANYO's high-current bipolar transistor product line, engineered specifically for industrial and automotive driver applications demanding ruggedness, wide ASO, and stable gain across temperature.

FAQ

What is the maximum continuous collector current rating for the 2SD1145G?

The 2SD1145G has a maximum continuous collector current (I_C) rating of 5 A at T_A = 25°C. This rating decreases with rising ambient temperature per the derating curve in ITR09971; at 75°C ambient, usable I_C drops to approximately 2.5 A. The 2SD1145G also supports 8 A pulsed current for durations up to 100 ms, useful for surge-tolerant lamp and motor startup circuits.

Does the 2SD1145G have a specified safe operating area (ASO)?

Yes, the 2SD1145G includes a defined safe operating area shown in graph ITR09970, covering DC and pulsed conditions up to V_CE = 40 V and I_C = 5 A at 25°C. This ASO validation confirms immunity to secondary breakdown during inductive load switching - a critical requirement for relay and hammer driver applications where voltage spikes occur.

What does the 'G' suffix in 2SD1145G indicate?

The 'G' suffix in 2SD1145G denotes the h_FE gain bin: 165–280 at V_CE = 2 V and I_C = 0.5 A. This tighter specification replaces broader bins (E: 100–230, F: 130–260), enabling more precise base resistor calculation and improved consistency in production batches of 2SD1145G-based driver circuits.

Can the 2SD1145G be used in automotive lighting applications?

Yes, the 2SD1145G is suitable for automotive lamp driver circuits such as brake light or interior lamp switching, provided ambient temperatures remain within –55°C to +125°C junction limits and transient suppression (e.g., TVS diodes) is implemented. Its 60 V V_CEO, low V_CE(sat), and G-grade h_FE ensure reliable turn-on under cold-cranking and load-dump conditions commonly encountered in 12 V vehicle systems.

Is the 2SD1145G pin-compatible with other TO-220 NPN transistors like the 2N3055?

No, the 2SD1145G is not pin-compatible with the 2N3055: the 2SD1145G uses E-C-B pinout (Emitter=1, Collector=2, Base=3), while the 2N3055 uses E-B-C (Emitter=1, Base=2, Collector=3). Substituting without board revision risks incorrect biasing and device failure. Always verify pinout using the official SANYO datasheet before replacement - the 2SD1145G pinout is confirmed as 1:E, 2:C, 3:B in No.784–2/3.

2SD1145G Specifications

Product attributes: Attribute value

Manufacturer:: onsemi

Series:: -

Package/Case:: TO-226-3, TO-92-3 Long Body

Packaging:: Bulk

Product Status:: Active

Transistor Type:: NPN

Current - Collector (Ic) (Max):: 5 A

Voltage - Collector Emitter Breakdown (Max):: 20 V

Vce Saturation (Max) @ Ib, Ic:: 500mV @ 60mA, 3A

Current - Collector Cutoff (Max):: 1µA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce:: 280 @ 500mA, 2V

Power - Max:: 900 mW

Frequency - Transition:: 120MHz

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: 3-MP

2SD1145G FAQ

1.How can I place an order for 2SD1145G through Aetrix?

Please submit a Request for Quotation (RFQ) for 2SD1145G on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 2SD1145G reliable?

The price and inventory of 2SD1145G are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 2SD1145G is usually 5 days.

3.What payment methods are accepted for 2SD1145G?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 2SD1145G transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for 2SD1145G?

2SD1145G orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 2SD1145G order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 2SD1145G?

For technical support, including 2SD1145G datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 2SD1145G requirements.

6.How does Aetrix verify that 2SD1145G is sourced from the original manufacturer or authorized distributors?

All 2SD1145G products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 2SD1145G meets industry standards.

7.What is the process for return or replacement of 2SD1145G?

All 2SD1145G units undergo pre-shipment inspection (PSI). If there is an issue with 2SD1145G, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 2SD1145G part is unused and in its original packaging.

Return procedure for 2SD1145G:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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