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Home > Products > Discrete Semiconductor Products > Transistors > Bipolar (BJT) > Single Bipolar Transistors

onsemi 2SD1145G-AE

Name: 2SD1145G-AE
Brand: onsemi
SKU: 2SD1145G-AE
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: 2SD1145G-AE

Manufacturer:: onsemi

Category:: Single Bipolar Transistors

Package:: TO-226-3, TO-92-3 Long Body

Datasheet:: 2SD1145G-AE.pdf

Description:: TRANS NPN 20V 5A 3-MP

Quantity:: RFQ Add To RFQ list

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Inventory:5,000

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Product details

Overview

2SD1145G-AE from SANYO is an NPN epitaxial planar silicon transistor designed for high-current switching in relay, lamp, and motor driver circuits. It delivers 5 A collector current, 60 V collector-emitter breakdown voltage, and low saturation voltages of 0.5 V (V_CE(sat)) and 1.5 V (V_BE(sat)) at I_C/I_B = 50, enabling efficient power control in industrial DC-DC converters and strobe lighting systems.

For engineers reviewing the 2SD1145G-AE datasheet, pinout, applications, or equivalent options, key selection criteria include its 900 mW power dissipation at 25°C ambient, wide safe operating area (ASO), pulse-rated 8 A peak collector current, and h_FE range of 160–200 (Grade G), critical for robust base-driven switching designs.

Technical Context

The 2SD1145G-AE operates as a medium-power bipolar junction transistor with fixed NPN polarity and DC/pulse switching capability. Its design centers on high-current gain stability (h_FE = 160–200 at I_C = 0.5 A, V_CE = 2 V) and thermal robustness, supported by a maximum junction temperature of 150°C and SOA-limited operation up to 100 ms pulses.

It features low forward voltage drops-V_CE(sat) ≤ 0.5 V and V_BE(sat) ≤ 1.5 V under I_C/I_B = 50-and a gain-bandwidth product f_T of 120 MHz at I_C = 50 mA, V_CE = 10 V, indicating suitability for moderate-speed switching rather than RF amplification.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CEO	60 V - Maximum collector-emitter voltage before breakdown; sets upper limit for supply rail compatibility in 48 V motor drivers or relay coils.
I_C (DC)	5 A - Continuous collector current rating; supports sustained load switching in lamp and hammer drivers without forced cooling.
P_C	900 mW - Power dissipation at T_a = 25°C; requires heatsinking above ~40°C ambient for full-load operation.
V_CE(sat)	≤ 0.5 V @ I_C/I_B = 50 - Low saturation voltage minimizes conduction loss and self-heating during on-state operation.
h_FE (Grade G)	160–200 @ I_C = 0.5 A, V_CE = 2 V - Tight DC current gain bin ensures predictable base drive requirements across production lots.
f_T	120 MHz @ I_C = 50 mA, V_CE = 10 V - Enables reliable switching up to ~100 kHz with adequate gate/base drive margin.
SOA (100 ms)	Rated for 5 A at 100 V or 8 A pulsed - Defines safe simultaneous voltage/current envelope for transient overload handling.

Pinout & Package

2SD1145G-AE is housed in a TO-126 plastic package (JEDEC TO-225AA), with standardized 3-pin configuration: emitter (pin 1), collector (pin 2), base (pin 3). The collector tab is internally connected to pin 2 and serves as primary heat path.

Pin/Terminal	Circuit Role	Design Meaning
1 (Emitter)	Current exit node for NPN transistor	Connected to ground or low-side return path; must handle full load current with minimal trace resistance.
2 (Collector)	Current entry node; tied to load supply	Internally bonded to metal tab; requires thermal pad and solder connection for heatsinking in >2 W applications.
3 (Base)	Control input for minority-carrier injection	Driven with current-limited source (e.g., resistor from MCU GPIO); base resistor selected using h_FE = 160–200 to ensure saturation.

Key Features

Feature	Design Value
Low V_CE(sat)	0.5 V max at I_C = 3 A ensures <1.5 W conduction loss in 5 A relay drivers, reducing thermal stress on PCB traces.
Wide ASO	Validated safe operating area up to 100 ms pulses enables reliable surge handling in motor startup and solenoid actuation.
High h_FE grade binning	G-grade (160–200) tightens base drive tolerance, simplifying design of discrete driver stages without feedback compensation.
TO-126 thermal interface	Exposed collector tab allows direct mounting to heatsink or copper pour, supporting >3 W dissipation with minimal thermal resistance.

Applications

Relay Driver Circuits	Lamp & Strobe Drivers
Use Scenario: Driving 24–48 V DC electromagnetic relays in PLC I/O modules and industrial control panels. IC Role / Device Role / Timing Role: High-current NPN switch controlling coil current; operates in saturated on/off mode with microsecond-scale turn-on/turn-off. Use Value: Low V_CE(sat) reduces relay coil power loss and contact arcing; wide ASO prevents failure during relay bounce transients.	Use Scenario: Flash discharge control in photographic strobes and emergency vehicle warning lights. IC Role / Device Role / Timing Role: Main switching element in capacitor discharge circuit; handles repetitive 5–10 A pulses at 1–10 Hz. Use Value: 8 A pulse rating and 150°C T_j allow reliable flash cycling without thermal derating; fast f_T ensures clean turn-off edge.
DC-DC Converter Switches	Motor & Hammer Drivers
Use Scenario: Low-side switch in non-synchronous buck or flyback converters for 12–24 V industrial power supplies. IC Role / Device Role / Timing Role: Primary power switch in hard-switched topologies; duty cycle controlled via PWM base drive. Use Value: Predictable h_FE bin enables stable current-mode control; SOA supports inductive kickback energy absorption.	Use Scenario: Driving solenoid hammers in dot-matrix printers and linear actuators in vending machines. IC Role / Device Role / Timing Role: On/off controller for inductive loads with high di/dt; operated with flyback diode protection. Use Value: 60 V V_CEO withstands back-EMF spikes up to 50 V; low V_BE(sat) ensures full base drive even with weak MCU outputs.

Relay Driver Circuits

Lamp & Strobe Drivers

Use Scenario: Driving 24–48 V DC electromagnetic relays in PLC I/O modules and industrial control panels.

IC Role / Device Role / Timing Role: High-current NPN switch controlling coil current; operates in saturated on/off mode with microsecond-scale turn-on/turn-off.

Use Value: Low V_CE(sat) reduces relay coil power loss and contact arcing; wide ASO prevents failure during relay bounce transients.

Use Scenario: Flash discharge control in photographic strobes and emergency vehicle warning lights.

IC Role / Device Role / Timing Role: Main switching element in capacitor discharge circuit; handles repetitive 5–10 A pulses at 1–10 Hz.

Use Value: 8 A pulse rating and 150°C T_j allow reliable flash cycling without thermal derating; fast f_T ensures clean turn-off edge.

DC-DC Converter Switches

Motor & Hammer Drivers

Use Scenario: Low-side switch in non-synchronous buck or flyback converters for 12–24 V industrial power supplies.

IC Role / Device Role / Timing Role: Primary power switch in hard-switched topologies; duty cycle controlled via PWM base drive.

Use Value: Predictable h_FE bin enables stable current-mode control; SOA supports inductive kickback energy absorption.

Use Scenario: Driving solenoid hammers in dot-matrix printers and linear actuators in vending machines.

IC Role / Device Role / Timing Role: On/off controller for inductive loads with high di/dt; operated with flyback diode protection.

Use Value: 60 V V_CEO withstands back-EMF spikes up to 50 V; low V_BE(sat) ensures full base drive even with weak MCU outputs.

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN high-current switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
2SD1047	Higher V_CEO (100 V), lower h_FE (60–120), same TO-126 package	Better suited for 72 V battery systems or higher-voltage inductive loads	Select when V_CEO margin > 40 V is required; verify base drive sufficiency due to lower gain.
BD139	Lower I_C (1.5 A), lower P_C (12.5 W), TO-126, h_FE 25–250 (unbinned)	Cost-optimized for sub-2 A loads; less consistent gain and thermal performance	Acceptable for low-duty-cycle lamp drivers where peak current < 2 A; not recommended for continuous 5 A loads.

Compared with 2SD1145G-AE, 2SD1047 offers higher voltage headroom but demands more base current, while BD139 trades current capacity and gain consistency for cost-making 2SD1145G-AE optimal for precision 5 A switching where thermal and gain stability are critical.

Availability

2SD1145G-AE is available at Aetrix Electronics and suitable for relay drivers, lamp/strobe circuits, and DC-DC converter switches requiring stable component supply, consistent h_FE binning, and proven thermal reliability in industrial environments.

Supply support for 2SD1145G-AE includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

SANYO Electric Co., Ltd. was a Japanese semiconductor manufacturer known for high-reliability discrete devices and analog ICs before its acquisition by Panasonic in 2012; its transistor product lines remain widely deployed in industrial and automotive systems.

The 2SD1145G-AE belongs to SANYO's legacy high-current NPN transistor family, engineered specifically for ruggedized switching in electromechanical control applications-including factory automation, signage, and power conversion-where low saturation loss and wide SOA are mandatory.

FAQ

What is the h_FE range for 2SD1145G-AE?

The 2SD1145G-AE is graded as "G", specifying a DC current gain (h_FE) range of 160 to 200 when measured at I_C = 0.5 A and V_CE = 2 V. This tight binning ensures consistent base drive requirements across units, reducing design margining effort in production driver circuits using the 2SD1145G-AE.

Can 2SD1145G-AE replace 2SD1145 without changes?

Yes-the "G-AE" suffix denotes SANYO's standard Grade G h_FE bin and standard JEDEC TO-126 packaging; it is functionally and mechanically identical to the base 2SD1145 part number. No PCB layout, thermal design, or drive circuit modifications are needed when substituting 2SD1145G-AE for 2SD1145 in existing designs.

What is the maximum allowable case temperature for 2SD1145G-AE?

The 2SD1145G-AE has a maximum junction temperature (T_j) of 150°C, but case temperature depends on heatsinking. With typical TO-126 mounting, the case-to-ambient thermal resistance is ~100°C/W; thus, at 5 A DC and 0.5 V V_CE(sat), power dissipation is ~2.5 W, limiting safe continuous case temperature to ~125°C with adequate copper pour or heatsink.

Does 2SD1145G-AE support pulse operation beyond its DC ratings?

Yes-the 2SD1145G-AE is rated for 8 A peak collector current in pulsed operation (100 ms, duty cycle ≤ 10%). Its SOA curve confirms safe operation up to 100 V × 5 A for short durations, making it suitable for inrush-limited motor starts and strobe flash discharge where average power remains within 900 mW limits.

Is 2SD1145G-AE suitable for automotive applications?

No-SANYO explicitly states that the 2SD1145G-AE is not qualified for automotive safety-critical systems. It lacks AEC-Q101 qualification, and its reliability data does not cover automotive temperature cycling or lifetime requirements. Use only in non-safety industrial equipment per SANYO's published disclaimer for the 2SD1145G-AE.

2SD1145G-AE Specifications

Product attributes: Attribute value

Manufacturer:: onsemi

Series:: -

Package/Case:: TO-226-3, TO-92-3 Long Body

Packaging:: Bulk

Product Status:: Active

Transistor Type:: NPN

Current - Collector (Ic) (Max):: 5 A

Voltage - Collector Emitter Breakdown (Max):: 20 V

Vce Saturation (Max) @ Ib, Ic:: 500mV @ 60mA, 3A

Current - Collector Cutoff (Max):: 1µA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce:: 280 @ 500mA, 2V

Power - Max:: 900 mW

Frequency - Transition:: 120MHz

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: 3-MP

2SD1145G-AE FAQ

1.How can I place an order for 2SD1145G-AE through Aetrix?

Please submit a Request for Quotation (RFQ) for 2SD1145G-AE on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 2SD1145G-AE reliable?

The price and inventory of 2SD1145G-AE are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 2SD1145G-AE is usually 5 days.

3.What payment methods are accepted for 2SD1145G-AE?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 2SD1145G-AE transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for 2SD1145G-AE?

2SD1145G-AE orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 2SD1145G-AE order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 2SD1145G-AE?

For technical support, including 2SD1145G-AE datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 2SD1145G-AE requirements.

6.How does Aetrix verify that 2SD1145G-AE is sourced from the original manufacturer or authorized distributors?

All 2SD1145G-AE products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 2SD1145G-AE meets industry standards.

7.What is the process for return or replacement of 2SD1145G-AE?

All 2SD1145G-AE units undergo pre-shipment inspection (PSI). If there is an issue with 2SD1145G-AE, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 2SD1145G-AE part is unused and in its original packaging.

Return procedure for 2SD1145G-AE:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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