onsemi 2SD1190

Overview

2SD1190 from SANYO is an NPN epitaxial planar silicon Darlington transistor in TO-220AB package, rated for V_CEO = −60 V, I_C = −4 A, P_C = 1.75 W at T_c = 25 °C, with h_FE ≥ 2000 at I_C = −2 A and V_CE = −2 V. It serves as a high-gain, high-current switching device in relay drivers and printer hammer circuits.

For engineers reviewing the 2SD1190 datasheet, pinout, applications, or equivalent options, key selection criteria include guaranteed DC current gain (h_FE ≥ 2000), low V_CE(sat) ≤ −1.5 V at I_C = −2 A / I_B = −4 mA, wide active safe operating area (ASO), and TO-220AB thermal performance up to 150 °C junction temperature.

Technical Context

The 2SD1190 operates as a two-stage NPN Darlington pair with integrated base-emitter shunt resistor network enabling fast turn-off. Its structure delivers high current amplification while maintaining stable saturation characteristics across −40 °C to +120 °C ambient range.

Electrical behavior is defined by strict absolute maximum ratings: V_CEO = −60 V, V_CB0 = −70 V, V_EB0 = −6 V, and continuous collector dissipation of 1.75 W at case temperature 25 °C - derating linearly above 25 °C per the published PC–Tc curve.

Key Specifications

Pinout & Package

2SD1190 uses the standard TO-220AB package with metal tab connected to collector (Pin 2). The plastic body provides electrical isolation between mounting surface and internal die.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar Darlington transistor applications.

Compared with 2SD1190, 2SD1047 offers significantly higher voltage and power handling in a larger TO-3P package, while MJD127 provides higher current and broader h_FE range in the same TO-220 outline but with non-identical pin assignment - both require revalidation of thermal and switching performance in the target circuit.

Availability

2SD1190 is available at Aetrix Electronics and suitable for motor drivers, printer hammer drivers, relay drivers, and voltage regulators requiring stable component supply and long-term industrial availability.

Supply support for 2SD1190 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

SANYO Electric Co., Ltd. was a Japanese semiconductor manufacturer specializing in analog, power, and discrete devices before its acquisition by Panasonic in 2012; known for high-reliability bipolar transistors and Darlington products.

The 2SD1190 belongs to SANYO's legacy high-gain Darlington transistor family designed specifically for industrial electromechanical actuation - emphasizing robust SOA, low saturation voltage, and stable h_FE over temperature.

FAQ

What is the pin configuration of the 2SD1190?

The 2SD1190 uses a TO-220AB package with standard pinout: Pin 1 = Base, Pin 2 = Collector (connected to metal tab), Pin 3 = Emitter. This configuration is confirmed in the official SANYO datasheet ENN924E and matches mechanical drawings for the 2SB880/2SD1190 dual ordering number. Always verify orientation using the tab and lead identification markings on the actual 2SD1190 device.

Does the 2SD1190 have an integrated base-emitter resistor?

No, the 2SD1190 does not include an integrated base-emitter resistor. It is a standard two-chip Darlington transistor requiring external base biasing. Unlike digital transistors (e.g., DTA/DTB series), the 2SD1190 relies on externally applied base current for turn-on and requires a separate pull-down resistor for reliable turn-off - a design detail confirmed in the switching time test circuit and application notes for the 2SD1190.

What is the maximum junction temperature for the 2SD1190?

The maximum junction temperature (T_j) for the 2SD1190 is +150 °C, as specified in the Absolute Maximum Ratings table of the SANYO ENN924E datasheet. This rating applies under all operating conditions and must be maintained via appropriate heatsinking and ambient temperature control to ensure long-term reliability of the 2SD1190 in industrial applications.

Can the 2SD1190 replace the 2SB880 in a circuit?

No, the 2SD1190 cannot directly replace the 2SB880 because they are complementary devices: 2SD1190 is NPN, while 2SB880 is PNP. Their polarity, biasing requirements, and circuit topology roles are opposite. The shared datasheet reflects dual-device characterization, not interchangeability. Substituting 2SD1190 for 2SB880 would invert switching logic and likely cause malfunction or damage in the 2SD1190 application.

What is the typical DC current gain (h_FE) of the 2SD1190 at 25°C?

The typical DC current gain (h_FE) of the 2SD1190 is 5000 at I_C = −2 A and V_CE = −2 V, with a guaranteed minimum of 2000 under those same conditions. This value is documented in the Electrical Characteristics table of the SANYO ENN924E datasheet and verified across multiple production lots referenced in the 2SD1190 characterization curves.