Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > Bipolar (BJT) > Single Bipolar Transistors

onsemi 2SD1207T-AE

Name: 2SD1207T-AE
Brand: onsemi
SKU: 2SD1207T-AE
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: 2SD1207T-AE

Manufacturer:: onsemi

Category:: Single Bipolar Transistors

Package:: TO-226-3, TO-92-3 Long Body, Formed Leads

Datasheet:: 2SD1207T-AE.pdf

Description:: TRANS NPN 50V 2A TO92

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:9,740

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

2SD1207T-AE from onsemi is a low-saturation-voltage NPN bipolar junction transistor rated for 50 V V_CEO, 2 A continuous collector current, and 1 W power dissipation in the MP (TO-92 variant) package. It features h_FE of 200–400 at 100 mA, V_CE(sat) ≤ 0.4 V at I_C = 1 A / I_B = 50 mA, and f_T = 150 MHz - optimized for automotive wiring, relay drivers, and lamp drivers requiring robust SOA and fast switching.

For engineers reviewing the 2SD1207T-AE datasheet, pinout, applications, or equivalent options, key selection criteria include verified V_CE(sat) performance at 1 A, h_FE grading consistency (Rank T), TO-92-compatible thermal derating, and JEDEC SC-51 mechanical compliance.

Technical Context

This NPN transistor uses FBET and MBIT processing to achieve low saturation voltage and wide safe operating area (SOA), enabling reliable operation under pulsed loads up to 4 A. Its 150 MHz f_T supports medium-frequency switching in discrete driver stages without requiring external compensation.

The device operates with V_BE(sat) of 0.9–1.2 V at I_C = 1 A / I_B = 50 mA and exhibits Cob = 12 pF at V_CB = 10 V, making it suitable for linear and saturated-mode applications where base drive efficiency and output capacitance impact rise/fall times.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CEO	50 V - maximum collector-emitter voltage before breakdown under open-base conditions; defines upper rail limit in relay/lamp driver circuits
I_C (cont.)	2 A - continuous DC collector current rating at T_a = 25°C; derates to ~1.2 A at 100°C ambient
V_CE(sat)	≤ 0.4 V @ I_C = 1 A, I_B = 50 mA - enables <1.2 W conduction loss in high-current switching nodes
h_FE (Rank T)	200–400 @ V_CE = 2 V, I_C = 100 mA - ensures stable base drive margin across production lots
f_T	150 MHz - supports switching frequencies up to ~10–20 MHz in unsaturated amplifier or oscillator configurations
C_ob	12 pF @ V_CB = 10 V, f = 1 MHz - limits Miller effect in common-emitter switch layouts

Pinout & Package

Package: MP (JEITA SC-51 / JEDEC TO-226AE / industry-standard TO-92 variant), epoxy-molded, through-hole, 3-pin vertical mounting.

Pin/Terminal	Circuit Role	Design Meaning
1 (Emitter)	Current sink terminal	Connected to ground or low-side return path; carries full load current in common-emitter configuration
2 (Collector)	Current source terminal	Connected to load (e.g., relay coil, lamp anode); must withstand 50 V transients and 4 A pulse current
3 (Base)	Control input	Receives current-limited drive (e.g., via 470 Ω resistor from 5 V MCU GPIO); requires ≥50 mA for full saturation at 1 A load

Key Features

Feature	Design Value
Low V_CE(sat)	≤ 0.4 V at 1 A ensures <0.4 W conduction loss and minimal self-heating in 1 W-rated package
Wide SOA	Rated for 4 A pulsed collector current with no second-breakdown limitation up to 50 V - supports inductive kick handling in relay coils
FBET/MBIT process	Enables tight h_FE distribution (200–400 for Rank T) and consistent V_BE(sat) across temperature
TO-92 mechanical compatibility	SC-51 outline matches standard TO-92 footprint and hole spacing - allows drop-in replacement in legacy designs

Applications

Automotive Wiring Harness Drivers	Lamp Driver Circuits
Use Scenario: Driving 12 V incandescent or LED lamps in vehicle interior lighting modules with PWM dimming. IC Role / Device Role / Timing Role: NPN switch controlling lamp cathode connection to ground; handles 1–2 A peak current during turn-on surge. Use Value: Low V_CE(sat) minimizes heat generation in confined harness enclosures; wide SOA prevents failure during cold-crank voltage dips.	Use Scenario: Switching halogen headlamp filaments in auxiliary lighting systems with reverse-polarity protection. IC Role / Device Role / Timing Role: High-current saturated switch placed between filament and chassis ground; driven by microcontroller GPIO. Use Value: 50 V V_CEO rating accommodates load-dump transients up to 40 V; h_FE ≥ 200 ensures single-stage drive without Darlington stacking.
Relay Coil Drivers	DC Power Supply Regulator Pass Elements
Use Scenario: Controlling 24 V industrial relays with 50–100 mA coil current in PLC I/O modules. IC Role / Device Role / Timing Role: Low-side switch sinking relay coil current; activated by optocoupler-isolated logic signal. Use Value: Fast turn-off enabled by low C_ob (12 pF) reduces contact bounce; V_CE(sat) stability ensures predictable coil energization timing.	Use Scenario: Linear pass transistor in 5 V/2 A adjustable LDO stage for analog sensor power rails. IC Role / Device Role / Timing Role: Series-pass element dissipating up to 1 W while regulating output under varying load. Use Value: 150°C max junction temperature and 1 W P_C rating allow operation at full current with minimal heatsinking in compact enclosures.

Automotive Wiring Harness Drivers

Lamp Driver Circuits

Use Scenario: Driving 12 V incandescent or LED lamps in vehicle interior lighting modules with PWM dimming.

IC Role / Device Role / Timing Role: NPN switch controlling lamp cathode connection to ground; handles 1–2 A peak current during turn-on surge.

Use Value: Low V_CE(sat) minimizes heat generation in confined harness enclosures; wide SOA prevents failure during cold-crank voltage dips.

Use Scenario: Switching halogen headlamp filaments in auxiliary lighting systems with reverse-polarity protection.

IC Role / Device Role / Timing Role: High-current saturated switch placed between filament and chassis ground; driven by microcontroller GPIO.

Use Value: 50 V V_CEO rating accommodates load-dump transients up to 40 V; h_FE ≥ 200 ensures single-stage drive without Darlington stacking.

Relay Coil Drivers

DC Power Supply Regulator Pass Elements

Use Scenario: Controlling 24 V industrial relays with 50–100 mA coil current in PLC I/O modules.

IC Role / Device Role / Timing Role: Low-side switch sinking relay coil current; activated by optocoupler-isolated logic signal.

Use Value: Fast turn-off enabled by low C_ob (12 pF) reduces contact bounce; V_CE(sat) stability ensures predictable coil energization timing.

Use Scenario: Linear pass transistor in 5 V/2 A adjustable LDO stage for analog sensor power rails.

IC Role / Device Role / Timing Role: Series-pass element dissipating up to 1 W while regulating output under varying load.

Use Value: 150°C max junction temperature and 1 W P_C rating allow operation at full current with minimal heatsinking in compact enclosures.

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN switching transistor applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
2SD1207S-AE	Same die, h_FE rank S (140–280), otherwise identical absolute ratings and electrical characteristics	Slightly lower minimum h_FE may require increased base drive in marginal saturation conditions	Select when tighter h_FE tolerance is not required and cost optimization is prioritized
MJD122G	TO-220 package, higher P_C = 1.5 W, V_CEO = 60 V, h_FE = 100–300 @ 1 A - larger footprint and different thermal interface	Used where >1 W continuous dissipation or PCB-mount heatsinking is needed	Choose only if board layout allows TO-220 footprint and higher power handling is mandatory

Compared with 2SD1207S-AE, the 2SD1207T-AE offers higher guaranteed h_FE for more robust base drive margin; versus MJD122G, it provides TO-92 compatibility and lower profile but reduced power dissipation capability.

Availability

2SD1207T-AE is available at Aetrix Electronics and suitable for automotive wiring harnesses, relay driver modules, and lamp control circuits requiring stable component supply, consistent h_FE grading, and TO-92 mechanical compatibility.

Supply support for 2SD1207T-AE includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

onsemi (formerly ON Semiconductor) is a global semiconductor supplier specializing in energy-efficient power management, analog, sensing, and connectivity solutions for automotive, industrial, and cloud infrastructure markets.

The 2SD1207T-AE belongs to onsemi's general-purpose bipolar transistor product line, engineered for high-reliability discrete switching in automotive and industrial control applications where low saturation voltage and wide SOA are critical.

FAQ

What is the h_FE range for 2SD1207T-AE?

The 2SD1207T-AE is graded as Rank T, with DC current gain h_FE specified from 200 to 400 at V_CE = 2 V and I_C = 100 mA. This tighter distribution compared to Rank S (140–280) improves base drive predictability in production designs using the 2SD1207T-AE.

Is 2SD1207T-AE RoHS compliant and lead-free?

Yes, the 2SD1207T-AE is marked "Pb Free" in the ordering information and conforms to RoHS Directive 2011/65/EU. The device uses lead-free terminations and halogen-free molding compound, and its packaging (1,000 pcs./box) meets JESD-STD-020 moisture sensitivity level 1 requirements.

What is the maximum pulsed collector current rating for 2SD1207T-AE?

The 2SD1207T-AE supports a peak collector current I_CP of 4 A under pulse conditions, as defined in its Absolute Maximum Ratings table. This rating applies with duty cycle and pulse width constraints that prevent junction temperature from exceeding 150°C - critical for relay coil and lamp surge handling.

Can 2SD1207T-AE replace 2SD1207S-AE in existing designs?

Yes, the 2SD1207T-AE is mechanically and electrically interchangeable with 2SD1207S-AE - same MP package, pinout, and absolute ratings. The only difference is h_FE grading (T: 200–400 vs. S: 140–280), so the 2SD1207T-AE may improve saturation margin without requiring layout or schematic changes.

What thermal derating applies to 2SD1207T-AE above 25°C ambient?

At ambient temperatures above 25°C, the 2SD1207T-AE's 1 W power dissipation rating decreases linearly at 8.3 mW/°C. For example, at 100°C ambient, maximum allowable P_C drops to approximately 0.38 W - requiring careful thermal design or reduced I_C in high-temperature environments.

2SD1207T-AE Specifications

Product attributes: Attribute value

Manufacturer:: onsemi

Series:: -

Package/Case:: TO-226-3, TO-92-3 Long Body, Formed Leads

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

Transistor Type:: NPN

Current - Collector (Ic) (Max):: 2 A

Voltage - Collector Emitter Breakdown (Max):: 50 V

Vce Saturation (Max) @ Ib, Ic:: 400mV @ 50mA, 1A

Current - Collector Cutoff (Max):: 100nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce:: 100 @ 100mA, 2V

Power - Max:: 1 W

Frequency - Transition:: 150MHz

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-92 (TO-226)

2SD1207T-AE FAQ

1.How can I place an order for 2SD1207T-AE through Aetrix?

Please submit a Request for Quotation (RFQ) for 2SD1207T-AE on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 2SD1207T-AE reliable?

The price and inventory of 2SD1207T-AE are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 2SD1207T-AE is usually 5 days.

3.What payment methods are accepted for 2SD1207T-AE?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 2SD1207T-AE transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for 2SD1207T-AE?

2SD1207T-AE orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 2SD1207T-AE order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 2SD1207T-AE?

For technical support, including 2SD1207T-AE datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 2SD1207T-AE requirements.

6.How does Aetrix verify that 2SD1207T-AE is sourced from the original manufacturer or authorized distributors?

All 2SD1207T-AE products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 2SD1207T-AE meets industry standards.

7.What is the process for return or replacement of 2SD1207T-AE?

All 2SD1207T-AE units undergo pre-shipment inspection (PSI). If there is an issue with 2SD1207T-AE, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 2SD1207T-AE part is unused and in its original packaging.

Return procedure for 2SD1207T-AE:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-09-09 Counterfeit Electronic Components: How to Detect, Authenticate, and Test Suspect Parts

Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …

2026-09-08 Obsolete Electronic Components: How to Source and Evaluate Replacements

A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.

2026-09-07 TTL vs CMOS Logic Levels: 74HC and 74HCT Compatibility Explained

TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.

2026-09-04 Logic Level Shifter: How to Connect 3.3V and 5V Logic Safely

A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.

2026-09-03 74HC595 vs TPIC6B595: Output Drive, Pinout, Current, and Load Selection

The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…

2026-09-02 74HC595 Pinout, Timing, Output Current, and Applications

The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…

2026-09-01 Latch vs Flip-Flop: Timing, Differences and Design Choices

A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…

2026-08-30 D Latch Circuit: Truth Table, Timing, ICs and Applications

A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …

2026-08-28 SR Latch Explained: NOR and NAND Circuits, Truth Tables, and Applications

An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…

2026-08-27 Latch Circuit: SR and D Latches, Truth Tables, Timing, and Applications

Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…