Toshiba Semiconductor and Storage 2SD1223,L1XGQ(O

Overview

2SD1223,L1XGQ(O) from Toshiba is a silicon NPN epitaxial Darlington transistor designed for high-gain switching and power amplification. It delivers h_FE ≥ 2000 at I_C = 1 A, V_CE = 2 V; V_CE(sat) ≤ 1.5 V at I_C = 3 A, I_B = 6 mA; and supports V_CEO = 80 V, I_C = 4 A - enabling robust hammer drive and pulse motor control in industrial actuators.

For engineers reviewing the 2SD1223,L1XGQ(O) datasheet, 2SD1223,L1XGQ(O) pinout, 2SD1223,L1XGQ(O) application, or 2SD1223,L1XGQ(O) equivalent, key selection criteria include DC current gain stability across temperature, saturation voltage under pulsed load conditions, safe operating area (SOA) derating at T_c > 25°C, and complementary pairing with 2SB908 for push-pull output stages.

Technical Context

This Darlington transistor uses Toshiba's PCT (Planar Complementary Transistor) process to achieve high h_FE with low base drive requirements. Its internal structure integrates a driver and output transistor with built-in base-emitter resistors (~4.5 kΩ and ~300 Ω), reducing external component count in switching circuits.

It operates in common-emitter configuration with guaranteed V_(BR)CEO = 80 V and junction temperature rating up to 150°C. Switching performance is characterized by t_on = 0.2 μs and t_f = 0.6 μs under I_B1 = −I_B2 = 6 mA, supporting fast turn-off in pulse motor drivers.

Key Specifications

Pinout & Package

Package: TO-126 (TOSHIBA 2-7J1A, JEITA-compliant, 0.36 g typical weight). Three-terminal through-hole package with collector tab electrically connected to collector pin.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar Darlington transistor applications.

Compared with 2SD1223,L1XGQ(O), 2SD1802 offers higher voltage tolerance but reduced current gain, while MJD122 provides SMT compatibility at the cost of added external components - both require redesign of base drive and thermal layout, and neither is pin-compatible.

Availability

2SD1223,L1XGQ(O) is available at Aetrix Electronics and suitable for hammer drive, pulse motor drive, and power amplifier applications requiring stable component supply, long-lifecycle support, and traceable RoHS-compliant sourcing.

Supply support for 2SD1223,L1XGQ(O) includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Toshiba Electronic Devices & Storage Corporation designs and manufactures discrete semiconductors, power devices, and logic ICs for industrial, automotive, and consumer applications.

The 2SD1223,L1XGQ(O) belongs to Toshiba's legacy PCT-process Darlington transistor family, engineered specifically for high-reliability electromechanical switching in factory automation and office equipment.

FAQ

What is the maximum continuous collector current for the 2SD1223,L1XGQ(O)?

The 2SD1223,L1XGQ(O) supports a maximum continuous collector current of 4 A at case temperature T_c = 25°C. Derating is required above this temperature per the PC–Ta curve; at T_c = 75°C, allowable I_C drops to approximately 2.5 A. This rating applies under proper heatsinking conditions using a ceramic substrate (50 × 50 × 0.8 mm) or infinite heat sink. The 2SD1223,L1XGQ(O) also supports short-duration pulsed currents up to 12 A for ≤1 ms.

Does the 2SD1223,L1XGQ(O) have built-in base resistors?

Yes, the 2SD1223,L1XGQ(O) integrates two internal base-emitter resistors: ≈4.5 kΩ between base and driver emitter, and ≈300 Ω between driver emitter and output emitter. These resistors enable simplified TTL/CMOS-level drive and improve turn-off speed by actively discharging stored base charge. This eliminates the need for external base pull-down resistors in most switching configurations, distinguishing the 2SD1223,L1XGQ(O) from standard bipolar transistors.

Is the 2SD1223,L1XGQ(O) RoHS compliant?

The 2SD1223,L1XGQ(O) is RoHS compliant per EU Directive 2011/65/EU. Marking includes [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]] depending on lot; underlined lot numbers indicate RoHS-compliant production. Toshiba confirms environmental compliance for this part number, and Aetrix Electronics supplies only RoHS-compliant units with full material declarations available upon request for the 2SD1223,L1XGQ(O).

What is the safe operating area (SOA) limitation for the 2SD1223,L1XGQ(O) at 100°C case temperature?

At T_c = 100°C, the 2SD1223,L1XGQ(O)'s SOA is significantly reduced: maximum continuous I_C drops to ~1.2 A at V_CE = 10 V, and pulsed capability is limited to ~3.5 A for 10 ms. The SOA boundary follows linear derating from the 25°C curve, and operation beyond these limits risks secondary breakdown. Designers must consult Figure 4 (Safe Operating Area) in the official Toshiba datasheet to validate operating points for the 2SD1223,L1XGQ(O) under thermal stress.

How does the 2SD1223,L1XGQ(O) compare to its complementary PNP counterpart 2SB908?

The 2SD1223,L1XGQ(O) and 2SB908 form a matched Darlington pair: same V_CEO (80 V), comparable h_FE (2000 vs. 1500 min), and symmetric V_CE(sat) (1.5 V vs. 1.6 V). They share identical TO-126 packaging and thermal characteristics, enabling balanced push-pull amplifier or H-bridge designs. The 2SD1223,L1XGQ(O) serves as the high-side switch in such topologies, while 2SB908 handles low-side conduction - their coordinated use minimizes crossover distortion and thermal mismatch in the 2SD1223,L1XGQ(O)/2SB908 pair.