onsemi 2SD1230

Overview

2SD1230 from SANYO Semiconductor is an NPN epitaxial planar silicon Darlington transistor designed for high-current switching in driver applications. It delivers 8 A continuous collector current, 100 V V_CEO, 1.5 V max V_CE(sat) at 4 A, and DC current gain (h_FE) of 1500–4000 at IC = 4 A - enabling robust relay, printer hammer, and motor control in industrial power interfaces.

For engineers reviewing the 2SD1230 datasheet, pinout, applications, or equivalent options, key selection criteria include its TO-3PB package thermal capability (60 W at T_c = 25°C), wide active safe operating area (ASO), low saturation voltage, and verified Darlington switching performance in pulsed 12 A loads.

Technical Context

The 2SD1230 implements a monolithic Darlington pair architecture with integrated base-emitter resistor network optimized for high-current gain and fast turn-on/turn-off dynamics. Its design supports direct drive from logic-level sources via 8 mA base current to switch 4 A collector load with sub-microsecond timing: t_on = 0.6 μs, t_stg = 4.8 μs, t_f = 1.6 μs.

It operates across –40°C to +150°C junction temperature range and features V_(BR)CBO = 110 V and V_(BR)CEO = 100 V, making it suitable for inductive load switching in unregulated DC rails up to 50 V with flyback protection - as validated in the specified test circuit using 470 μF/100 μF capacitive filtering and 50 Ω load.

Key Specifications

Pinout & Package

2SD1230 is housed in a TO-3PB metal package with integral mounting flange, rated for high thermal conductivity and mechanical robustness in industrial power stages. The case serves as the collector terminal.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current Darlington transistor applications.

Compared with BDW93C and MJ11016G, the 2SD1230 offers superior DC current gain and faster switching within its 100 V/8 A envelope, making it optimal for space-constrained, logic-driven driver circuits where base drive efficiency and transient response are prioritized over absolute current headroom.

Availability

2SD1230 is available at Aetrix Electronics and suitable for motor drivers, printer hammer drivers, relay drivers, and voltage regulator control applications requiring stable component supply, long-term industrial availability, and traceable sourcing from original manufacturer stock.

Supply support for 2SD1230 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

SANYO Semiconductor was a Japanese semiconductor manufacturer specializing in analog, power, and discrete devices before its acquisition by ON Semiconductor in 2013. Known for rugged, thermally optimized power transistors and regulators.

The 2SD1230 belongs to SANYO's high-current Darlington transistor product line, engineered specifically for industrial actuator and power interface applications demanding high gain, wide SOA, and reliable operation under repetitive pulse stress.

FAQ

What is the maximum continuous collector current rating for the 2SD1230?

The 2SD1230 has a maximum continuous collector current (I_C) rating of 8 A at T_c = 25°C. This rating assumes proper heatsinking and case temperature monitoring. At elevated case temperatures, derating applies per the PC–Tc curve in the datasheet - for example, at T_c = 75°C, the usable I_C drops to approximately 4.5 A. Always verify thermal design margins using the 2SD1230's published thermal resistance and ambient conditions.

Does the 2SD1230 have an internal base resistor?

No, the 2SD1230 does not integrate a base resistor. It is a standard two-terminal base Darlington transistor requiring external base current limiting. The datasheet specifies I_B = 8 mA to achieve full saturation at I_C = 4 A, so a series resistor (e.g., ~560 Ω from 5 V logic) must be used. Unlike some modern Darlington arrays (e.g., ULN2003), the 2SD1230 relies on discrete base drive design for flexibility and thermal optimization.

Can the 2SD1230 be used in linear regulator applications?

Yes, the 2SD1230 is explicitly suited for linear voltage regulator pass transistor roles. Its 60 W collector dissipation at T_c = 25°C, 100 V V_CEO, and low V_CE(sat) enable stable operation in adjustable 3–12 V, 5–7 A regulators. However, thermal design is critical: the TO-3PB case must be mounted to a heatsink with ≤0.5°C/W thermal resistance to maintain T_j < 150°C under worst-case dropout and load conditions.

What is the safe operating area (SOA) limitation for the 2SD1230 during switching?

The 2SD1230 features a wide active SOA defined up to 100 V and 8 A DC, with pulse capability extending to 12 A at 50 μs. During switching, the device remains within SOA if V_CE × I_C does not exceed the published boundary curves - especially critical during turn-off of inductive loads. The datasheet's ASO graph (No.1034-3/4) confirms safe operation at 50 V/6 A for 100 μs pulses, provided adequate snubbering and clamping are implemented.

Is the 2SD1230 RoHS compliant and halogen-free?

The original 2SD1230 datasheet (EN1034C, dated December 2008) predates full RoHS-2 enforcement and does not declare RoHS or halogen-free status. Current production lots supplied by Aetrix Electronics meet RoHS Directive 2011/65/EU and JEDEC JS709B halogen-free requirements. Certifications and material declarations for the 2SD1230 are available upon request for qualifying orders.