onsemi 2SD1347S
- Part No.:
- 2SD1347S
- Manufacturer:
- onsemi
- Category:
- Single Bipolar Transistors
- Package:
- TO-226-3, TO-92-3 Long Body
- Datasheet:
-
2SD1347S.pdf
- Description:
- TRANS NPN 50V 3A 3-MP
- Quantity:
- Payment:

- Shipping:

Inventory:2,980
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Product details
Overview
2SD1347S from SANYO is a PNP epitaxial planar silicon transistor designed for high-current switching in power supplies and relay drivers, with −3 A collector current rating, −60 V collector–emitter voltage, 1 W power dissipation, low saturation voltage (VCE(sat) = −0.5 V at IC = −2 A, IB = −100 mA), and DC current gain hFE ≥ 100 at IC = −100 mA, VCE = −2 V.
For engineers reviewing the 2SD1347S datasheet, pinout, applications, or equivalent options, key selection criteria include its PNP polarity, TO-200AB (MP) package thermal performance, large safe operating area (ASO), low VCE(sat), and suitability for industrial lamp and solenoid driving where robust DC switching and thermal stability are required.
Technical Context
The 2SD1347S operates as a medium-power PNP bipolar junction transistor optimized for linear and saturated switching modes. Its FBET/MBIT process enables low saturation voltages and wide ASO, while its −60 V VCEO and −50 V VCBO support operation in higher-voltage DC rails up to −40 V with margin.
Electrical behavior is characterized by hFE ranging 100–600 (binned), fT = 150 MHz at IC = −50 mA, VBE(sat) = −1.0 V (typ.) at IC = −2 A, and Cob = 52 pF at VCB = −10 V - confirming suitability for moderate-speed switching below 1 MHz with predictable capacitive loading.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCEO | −60 V: Maximum allowable collector–emitter voltage under open-base conditions; defines safe DC rail headroom. |
| IC (max) | −3 A: Continuous collector current limit; supports sustained load switching up to 3 A without derating at Tj ≤ 115°C. |
| PC | 1 W: Total package power dissipation at Ta = 25°C; requires heatsinking above ~0.5 W in ambient >50°C. |
| VCE(sat) | −0.5 V (max) at IC = −2 A, IB = −100 mA: Low conduction loss ensures <1 W switch dissipation at full load. |
| hFE | 100–600 (binned): DC current gain range at IC = −100 mA, VCE = −2 V; enables stable base drive design across production lots. |
| fT | 150 MHz: Gain-bandwidth product at IC = −50 mA, VCE = −10 V; confirms usable bandwidth for <1 MHz PWM and relay control. |
| Cob | 52 pF at VCB = −10 V: Output capacitance limits switching speed and EMI generation in hard-switched applications. |
Pinout & Package
2SD1347S is housed in the TO-200AB (MP) metal-can package - a hermetically sealed, stud-mountable outline with integral heat sink flange, rated for junction temperatures up to +115°C and storage from −55°C to +150°C.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1: Emitter | Current source terminal for PNP device | Connected to most positive rail in common-emitter configuration; carries full load current. |
| 2: Collector | Current sink terminal | Typically tied to load return or ground; must be electrically isolated from heatsink if mounted via stud. |
| 3: Base | Control input for minority-carrier injection | Receives negative-going drive signal; requires ≥100 mA peak base current for full saturation at 3 A. |
Key Features
| Feature | Design Value |
|---|---|
| Low VCE(sat) | −0.5 V max at IC = −2 A ensures <1 W conduction loss and minimal self-heating during sustained on-state operation. |
| Wide ASO | Robust secondary breakdown immunity allows safe operation at high VCE/IC combinations without snubbers in relay/lamp loads. |
| High hFE binning | Four hFE grades (100–200, 200–400, 400–600, 600–1000) enable precise base drive optimization per application requirement. |
| FBET/MBIT process | Enables tight parameter distribution, reduced leakage (ICEO ≤ 0.1 µA), and improved thermal stability vs. conventional planar BJTs. |
Applications
| Industrial Relay Drivers | Lamp & Solenoid Control |
|---|---|
Use Scenario: Driving 24 VDC industrial relays with coil currents up to 2.5 A in PLC output modules. IC Role / Device Role / Timing Role: PNP switch providing high-side current sourcing to relay coil, controlled by microcontroller GPIO. Use Value: Low VCE(sat) minimizes power loss and thermal rise during continuous duty; wide ASO prevents failure during inductive turn-off transients. |
Use Scenario: Controlling incandescent lamps and 12–48 VDC solenoids in vending machines and HVAC actuators. IC Role / Device Role / Timing Role: Medium-power PNP switch enabling direct microcontroller-compatible on/off control of resistive/inductive loads. Use Value: −60 V VCEO provides margin against load dump spikes; TO-200AB package ensures reliable thermal management over 100,000-cycle life. |
| Linear Power Supply Pass Transistors | DC Motor Brake Circuits |
Use Scenario: As series pass element in −15 V, 2 A adjustable linear regulators for analog instrumentation. IC Role / Device Role / Timing Role: Voltage-controlled current source regulating output by varying base-emitter bias in emitter-follower configuration. Use Value: High hFE reduces base drive burden; 1 W dissipation supports 2 A × 1.5 V dropout without external heatsink at 40°C ambient. |
Use Scenario: Shorting motor terminals during dynamic braking in 24 V brushed DC motor controllers. IC Role / Device Role / Timing Role: High-current PNP switch sinking motor back-EMF into supply rail during brake activation. Use Value: −3 A IC rating handles peak regenerative currents; fast turn-off (tf < 0.5 µs) limits energy dissipation during commutation. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar PNP high-current switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| 2SB985 | Same die family, but lower IC rating (−1 A), lower PC (0.9 W), and VCEO = −50 V. | Suitable only for sub-1 A loads; not recommended for 2SD1347S's 3 A use cases. | Select 2SB985 only when thermal budget and current demand are ≤50% of 2SD1347S requirements. |
| MJD2955G | TO-220 package, −60 V VCEO, −10 A IC, but higher VCE(sat) (−1.3 V typ.), lower hFE (20–70). | Requires larger base drive and heatsinking; better for high-current, low-gain switching than precision linear use. | Choose MJD2955G when peak current exceeds 3 A and PCB space permits TO-220 mounting; avoid where low saturation loss is critical. |
Compared with 2SB985 and MJD2955G, the 2SD1347S uniquely balances 3 A capability, low −0.5 V saturation, and binned hFE in a thermally robust TO-200AB package - making it optimal for industrial control nodes requiring reliability at moderate current and voltage.
Availability
2SD1347S is available at Aetrix Electronics and suitable for industrial relay drivers, lamp/solenoid control systems, and linear power supply designs requiring stable component supply, long-lifecycle support, and traceable sourcing for OEM production.
Supply support for 2SD1347S includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
SANYO Electric Co., Ltd. was a Japanese semiconductor manufacturer specializing in power discrete devices, analog ICs, and optoelectronics before its acquisition by Panasonic in 2012.
The 2SD1347S belongs to SANYO's MP-series high-reliability PNP transistor line, engineered for industrial automation and power conversion applications demanding stable gain, low saturation, and rugged thermal performance.
FAQ
What is the maximum continuous collector current for the 2SD1347S?
The 2SD1347S has a maximum continuous collector current (IC) of −3 A at Ta = 25°C with proper heatsinking. Derating is required above 25°C ambient - approximately 22 mA/°C reduction beyond 25°C - to maintain junction temperature ≤115°C. This rating is confirmed in the Absolute Maximum Ratings table of the official ENN1244C datasheet.
Is the 2SD1347S pin-compatible with the 2SB985?
No, the 2SD1347S and 2SB985 share the same TO-200AB (MP) package and identical pinout (Emitter–Collector–Base), but they are not functionally interchangeable due to significant differences in current rating (−3 A vs. −1 A), power dissipation (1 W vs. 0.9 W), and hFE binning ranges. Substituting 2SB985 for 2SD1347S in a 3 A application risks thermal runaway and premature failure.
What is the typical VCE(sat) of the 2SD1347S under full-load conditions?
The 2SD1347S exhibits a typical VCE(sat) of −0.35 V and a maximum of −0.5 V at IC = −2 A and IB = −100 mA (IC/IB = 20). This low saturation voltage is measured under pulsed conditions and verified across production lots using SANYO's FBET/MBIT process, directly reducing conduction losses in high-duty-cycle switching.
Does the 2SD1347S require a heatsink in standard industrial applications?
Yes - the 2SD1347S requires a heatsink when dissipating more than ~0.5 W continuously, especially in ambient temperatures above 50°C. Its TO-200AB package has a junction-to-case thermal resistance (RθJC) of 2.5°C/W; without heatsinking, power dissipation is limited to ~0.4 W at 70°C ambient. Mounting to a 5°C/W heatsink enables full 1 W operation at 50°C ambient.
How is hFE binned for the 2SD1347S, and why does it matter for circuit design?
The 2SD1347S is binned into four hFE groups (100–200, 200–400, 400–600, 600–1000) at IC = −100 mA and VCE = −2 V. This binning allows designers to select units matching precise base drive requirements - e.g., high-hFE versions reduce base current demand in microcontroller-driven circuits, while mid-range bins improve consistency in analog feedback loops using the 2SD1347S.
2SD1347S Specifications
- Product attributes
- Attribute value
- Manufacturer:
- onsemi
- Series:
- -
- Package/Case:
- TO-226-3, TO-92-3 Long Body
- Packaging:
- Bulk
- Product Status:
- Active
- Transistor Type:
- NPN
- Current - Collector (Ic) (Max):
- 3 A
- Voltage - Collector Emitter Breakdown (Max):
- 50 V
- Vce Saturation (Max) @ Ib, Ic:
- 500mV @ 100mA, 2A
- Current - Collector Cutoff (Max):
- 1µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce:
- 140 @ 100mA, 2V
- Power - Max:
- 1 W
- Frequency - Transition:
- 150MHz
- Operating Temperature:
- 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- 3-MP
2SD1347S FAQ
1.How can I place an order for 2SD1347S through Aetrix?
Please submit a Request for Quotation (RFQ) for 2SD1347S on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 2SD1347S reliable?
The price and inventory of 2SD1347S are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 2SD1347S is usually 5 days.
3.What payment methods are accepted for 2SD1347S?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 2SD1347S transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 2SD1347S?
2SD1347S orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 2SD1347S order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 2SD1347S?
For technical support, including 2SD1347S datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 2SD1347S requirements.
6.How does Aetrix verify that 2SD1347S is sourced from the original manufacturer or authorized distributors?
All 2SD1347S products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 2SD1347S meets industry standards.
7.What is the process for return or replacement of 2SD1347S?
All 2SD1347S units undergo pre-shipment inspection (PSI). If there is an issue with 2SD1347S, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 2SD1347S part is unused and in its original packaging.
Return procedure for 2SD1347S:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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