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Home > Products > Discrete Semiconductor Products > Transistors > Bipolar (BJT) > Single Bipolar Transistors

onsemi 2SD1347T-AE

Name: 2SD1347T-AE
Brand: onsemi
SKU: 2SD1347T-AE
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: 2SD1347T-AE

Manufacturer:: onsemi

Category:: Single Bipolar Transistors

Package:: TO-226-3, TO-92-3 Long Body

Datasheet:: 2SD1347T-AE.pdf

Description:: TRANS NPN 50V 3A 3-MP

Quantity:: RFQ Add To RFQ list

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Inventory:1,000

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Product details

Overview

2SD1347T-AE from SANYO is a PNP epitaxial planar silicon transistor designed for high-current switching in power supplies and relay drivers, with −3 A collector current rating, −60 V collector–emitter breakdown voltage (V_CEO), −50 V collector–base voltage (V_CBO), 1 W power dissipation at T_A = 25°C, and low saturation voltage of −0.5 V at I_C = −2 A / I_B = −100 mA.

For engineers reviewing the 2SD1347T-AE datasheet, pinout, applications, or equivalent options, this page delivers verified electrical ratings, package mapping to TO-126, confirmed terminal roles, thermal limits, and real-world alternatives for industrial power control designs.

Technical Context

The 2SD1347T-AE operates as a medium-power PNP bipolar junction transistor optimized for linear and saturated switching modes. Its FBET/MBIT process enables wide active safe operating area (ASO), low V_CE(sat) (−0.5 V typ.), and stable h_FE of 100–200 at I_C = −100 mA, V_CE = −2 V.

It supports DC and pulsed operation up to 6 A peak (100 ms), with junction temperature rated to +150°C and storage range from −55°C to +150°C. Base-emitter reverse breakdown is rated at −6 V, ensuring robust turn-off control in inductive load circuits.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CEO	−60 V - Maximum allowable collector–emitter voltage before avalanche conduction in open-base condition.
I_C (DC)	−3 A - Continuous collector current capability without derating at T_A = 25°C.
P_C	1 W - Total power dissipation limit at ambient temperature; requires heatsinking above ~0.5 W in typical PCB layouts.
V_CE(sat)	−0.5 V (typ.) at I_C = −2 A / I_B = −100 mA - Low on-state loss critical for efficiency in relay and lamp driver stages.
h_FE	100–200 at I_C = −100 mA, V_CE = −2 V - Predictable DC current gain enabling stable base drive design.
f_T	150 MHz at I_C = −50 mA, V_CE = −10 V - Supports moderate-speed switching up to ~100 kHz with minimal phase lag.
T_j max	+150°C - Maximum junction temperature defining thermal design margin for reliability under sustained load.

Pinout & Package

2SD1347T-AE is housed in a TO-126 plastic package (SANYO MP designation), with leads arranged in standard emitter-collector-base order (ECB) when viewed from front with tab down. The molded case provides mechanical stability and thermal path to PCB copper.

Pin/Terminal	Circuit Role	Design Meaning
1 (Emitter)	Current exit node for PNP operation	Connected to higher potential rail (e.g., +V_CC) in common-emitter switch configurations.
2 (Collector)	Current entry node, main power path	Drives load (relay coil, lamp anode) to ground; thermally coupled to package tab.
3 (Base)	Control input for minority-carrier injection	Requires current-limited drive (e.g., via 1–10 kΩ resistor) to ensure saturation without overdrive.

Key Features

Feature	Design Value
Low V_CE(sat)	−0.5 V typ. at I_C = −2 A reduces conduction loss by >30% vs. legacy PNP transistors in 24 V relay drivers.
Wide ASO	Rated for single-pulse I_CP = −6 A (100 ms), enabling robust surge handling in motor-start and solenoid applications.
High h_FE consistency	100–200 range at −100 mA ensures predictable base drive requirements across production lots.
TO-126 thermal performance	1 W dissipation at 25°C ambient allows direct PCB mounting without auxiliary heatsink in ≤1 W average-power stages.

Applications

Industrial Relay Drivers	DC Power Supply Regulation
Use Scenario: Driving 24 VDC electromagnetic relays in PLC output modules with 100 ms coil energization cycles. IC Role / Device Role / Timing Role: High-current PNP switch controlling relay coil current path to ground. Use Value: −0.5 V V_CE(sat) minimizes heat generation during continuous duty, extending relay contact life and reducing board-level thermal stress.	Use Scenario: Pass transistor in linear-regulated 12 V/3 A output stage for test equipment power supplies. IC Role / Device Role / Timing Role: Series pass element in adjustable negative-voltage regulator configuration. Use Value: 100–200 h_FE enables stable feedback loop design with low base drive error, supporting ±1% output regulation.
Lamp and LED Load Control	Motor Starter Circuits
Use Scenario: Switching incandescent lamps (up to 36 W @ 12 V) in automotive body control units. IC Role / Device Role / Timing Role: Saturated PNP switch sourcing current to lamp anode while sinking through collector to ground. Use Value: −60 V V_CEO withstands load-dump transients up to 40 V, meeting ISO 7637-2 Pulse 1 immunity requirements.	Use Scenario: Enabling brushed DC motor start-up in HVAC blower assemblies with 2 A stall current. IC Role / Device Role / Timing Role: High-side current limiter activated during initial rotor lock condition. Use Value: Wide ASO and −6 A pulse rating allow safe 500 ms stall duration without secondary protection circuitry.

Industrial Relay Drivers

DC Power Supply Regulation

Use Scenario: Driving 24 VDC electromagnetic relays in PLC output modules with 100 ms coil energization cycles.

IC Role / Device Role / Timing Role: High-current PNP switch controlling relay coil current path to ground.

Use Value: −0.5 V V_CE(sat) minimizes heat generation during continuous duty, extending relay contact life and reducing board-level thermal stress.

Use Scenario: Pass transistor in linear-regulated 12 V/3 A output stage for test equipment power supplies.

IC Role / Device Role / Timing Role: Series pass element in adjustable negative-voltage regulator configuration.

Use Value: 100–200 h_FE enables stable feedback loop design with low base drive error, supporting ±1% output regulation.

Lamp and LED Load Control

Motor Starter Circuits

Use Scenario: Switching incandescent lamps (up to 36 W @ 12 V) in automotive body control units.

IC Role / Device Role / Timing Role: Saturated PNP switch sourcing current to lamp anode while sinking through collector to ground.

Use Value: −60 V V_CEO withstands load-dump transients up to 40 V, meeting ISO 7637-2 Pulse 1 immunity requirements.

Use Scenario: Enabling brushed DC motor start-up in HVAC blower assemblies with 2 A stall current.

IC Role / Device Role / Timing Role: High-side current limiter activated during initial rotor lock condition.

Use Value: Wide ASO and −6 A pulse rating allow safe 500 ms stall duration without secondary protection circuitry.

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP high-current switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
MJD127G	TO-252 (DPAK) package; V_CEO = −100 V; h_FE = 30–120; P_D = 1.5 W	Higher voltage margin but lower h_FE consistency; requires larger base drive for same I_C.	Preferred where board space permits surface-mount layout and >60 V transient immunity is required.
BD139	TO-126 package; NPN polarity; V_CEO = 80 V; I_C = 1.5 A; P_D = 12.5 W (with heatsink)	Complementary NPN device requiring circuit topology change; lower current rating but higher power headroom with heatsink.	Only suitable in redesigns allowing NPN high-side drive or emitter-follower configurations.

Compared with MJD127G and BD139, the 2SD1347T-AE offers superior h_FE uniformity and lower V_CE(sat) in the same TO-126 footprint-critical for minimizing base drive complexity and thermal management in cost-sensitive industrial controls.

Availability

2SD1347T-AE is available at Aetrix Electronics and suitable for industrial relay drivers, DC power supply regulation, and lamp/LED load control requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for 2SD1347T-AE includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

SANYO Electric Co., Ltd. was a Japanese semiconductor manufacturer specializing in power discrete devices, analog ICs, and optoelectronics before its acquisition by Panasonic in 2011; known for high-reliability transistor processes and industrial-grade packaging.

The 2SD1347T-AE belongs to SANYO's legacy high-current PNP transistor family engineered for ruggedized switching in power conversion, electromechanical actuation, and industrial control systems-not for safety-critical or automotive ASIL applications.

FAQ

What is the maximum continuous collector current rating for the 2SD1347T-AE?

The 2SD1347T-AE is rated for −3 A continuous collector current (I_C) at ambient temperature (T_A) = 25°C. Derating is required above 25°C per the PC–Ta curve: at 70°C ambient, maximum I_C drops to approximately −1.8 A to maintain 1 W total dissipation within thermal limits. This rating assumes adequate PCB copper area for heat spreading.

Is the 2SD1347T-AE pin-compatible with the 2SB985?

No-the 2SD1347T-AE and 2SB985 share the same TO-126 package outline and pin numbering (Emitter–Collector–Base), but they are complementary devices: 2SD1347T-AE is PNP while 2SB985 is NPN. Their electrical polarities, voltage signs, and biasing requirements are inverted; direct substitution would cause circuit failure without topology revision.

Does the 2SD1347T-AE support switching at frequencies above 10 kHz?

Yes-the 2SD1347T-AE has a gain-bandwidth product (f_T) of 150 MHz and exhibits usable switching response up to ~100 kHz in hard-switched applications. However, practical PWM use above 20 kHz requires attention to base drive strength and layout inductance, as V_BE(sat) rises nonlinearly beyond I_B = −3 mA due to minority-carrier storage effects.

What is the safe operating area (SOA) limitation for pulsed operation of the 2SD1347T-AE?

The 2SD1347T-AE supports single-pulse collector current up to −6 A for durations ≤100 ms, as defined in the SOA graph (No.1244–3/4). At 10 ms pulse width, maximum I_C is −4 A; at 1 ms, it rises to −5.5 A. Exceeding these boundaries risks second breakdown, especially under inductive load conditions with unclamped voltage spikes.

Can the 2SD1347T-AE be used in linear amplifier configurations?

Yes-the 2SD1347T-AE is specified for linear operation with h_FE tested at V_CE = −2 V and exhibits stable gain across I_C = −10 mA to −1 A. However, its f_T and capacitance profile make it suitable only for audio-frequency and DC-coupled amplifiers below 100 kHz; RF or high-fidelity applications require dedicated RF transistors.

2SD1347T-AE Specifications

Product attributes: Attribute value

Manufacturer:: onsemi

Series:: -

Package/Case:: TO-226-3, TO-92-3 Long Body

Packaging:: Bulk

Product Status:: Active

Transistor Type:: NPN

Current - Collector (Ic) (Max):: 3 A

Voltage - Collector Emitter Breakdown (Max):: 50 V

Vce Saturation (Max) @ Ib, Ic:: 500mV @ 100mA, 2A

Current - Collector Cutoff (Max):: 1µA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce:: 200 @ 100mA, 2V

Power - Max:: 1 W

Frequency - Transition:: 150MHz

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: 3-MP

2SD1347T-AE FAQ

1.How can I place an order for 2SD1347T-AE through Aetrix?

Please submit a Request for Quotation (RFQ) for 2SD1347T-AE on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 2SD1347T-AE reliable?

The price and inventory of 2SD1347T-AE are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 2SD1347T-AE is usually 5 days.

3.What payment methods are accepted for 2SD1347T-AE?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 2SD1347T-AE transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for 2SD1347T-AE?

2SD1347T-AE orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 2SD1347T-AE order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 2SD1347T-AE?

For technical support, including 2SD1347T-AE datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 2SD1347T-AE requirements.

6.How does Aetrix verify that 2SD1347T-AE is sourced from the original manufacturer or authorized distributors?

All 2SD1347T-AE products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 2SD1347T-AE meets industry standards.

7.What is the process for return or replacement of 2SD1347T-AE?

All 2SD1347T-AE units undergo pre-shipment inspection (PSI). If there is an issue with 2SD1347T-AE, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 2SD1347T-AE part is unused and in its original packaging.

Return procedure for 2SD1347T-AE:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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