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Home > Products > Discrete Semiconductor Products > Transistors > Bipolar (BJT) > Single Bipolar Transistors

Renesas 2SD1614-T1-AZ

Name: 2SD1614-T1-AZ
Brand: Renesas
SKU: 2SD1614-T1-AZ
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: 2SD1614-T1-AZ

Manufacturer:: Renesas

Category:: Single Bipolar Transistors

Package:: TO-243AA

Datasheet:: 2SD1614-T1-AZ.pdf

Description:: TRANS NPN 20V 2A SC-62

Quantity:: RFQ Add To RFQ list

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Product details

Overview

2SD1614-T1-AZ from Renesas Electronics is an NPN silicon epitaxial power transistor in a Power Mini Mold package, rated for 150 V V_CEO, 1.5 A I_C, and 1 W P_D at T_A = 25°C. It features h_FE = 120–270 at I_C = 500 mA, V_CE = 2 V, and is optimized for medium-power linear and switching applications including relay drivers and power supply control stages.

For engineers reviewing the 2SD1614-T1-AZ datasheet, 2SD1614-T1-AZ pinout, 2SD1614-T1-AZ application, or 2SD1614-T1-AZ equivalent, key selection criteria include its DC current gain range, safe operating area (SOA) at elevated junction temperatures, TO-220F-compatible footprint, and suitability for industrial-grade non-safety-critical amplification and switching circuits.

Technical Context

This discrete NPN bipolar junction transistor operates in active, saturation, and cutoff regions with specified DC current gain (h_FE) across collector current (I_C = 10 mA to 1 A) and collector-emitter voltage (V_CE = 2 V). Its SOA is defined up to T_J = 150°C, and it supports continuous base drive with V_BE(sat) = 1.5 V max at I_C = 1.5 A, I_B = 150 mA.

The device uses epitaxial base construction for improved switching speed and thermal stability, with guaranteed f_T ≥ 100 MHz at I_C = 50 mA, V_CE = 10 V. Its Power Mini Mold package provides mechanical robustness and thermal resistance R_θJA = 100°C/W (standard PCB mount).

Key Specifications

Parameter	Value and Actual Design Meaning
V_CEO	150 V - Maximum collector-emitter voltage before breakdown under open-base condition; defines high-side switch headroom in 12–48 V systems.
I_C (max)	1.5 A - Continuous DC collector current rating; sets upper limit for relay coil drive or linear regulator pass element duty.
P_D (T_A=25°C)	1 W - Total power dissipation at ambient; requires heatsinking above ~300 mW in enclosed environments.
h_FE (I_C=500 mA)	120–270 - DC current gain range at mid-current; enables predictable base resistor sizing for saturated switching.
f_T	≥100 MHz - Transition frequency at I_C=50 mA, V_CE=10 V; supports audio-frequency amplification and fast PWM switching.
V_BE(sat)	1.5 V max - Base-emitter saturation voltage at I_C=1.5 A, I_B=150 mA; determines base drive power loss and logic-level compatibility.
R_θJA	100°C/W - Junction-to-ambient thermal resistance; informs minimum copper area (≥1.5 cm²) needed for 1 W operation without heatsink.

Pinout & Package

2SD1614-T1-AZ is housed in a Power Mini Mold (TO-220F-compatible) plastic package with three leads: emitter, base, and collector. The package features internal insulation between collector tab and lead frame, enabling direct mounting to heatsinks without isolation hardware.

Pin/Terminal	Circuit Role	Design Meaning
Collector (Tab)	Main current output terminal, electrically connected to metal tab	Provides low-inductance, high-current path to heatsink; must be isolated from chassis unless circuit ground references collector.
Base	Control input for bipolar conduction	Requires current-limited drive (typically 5–15% of I_C) to ensure saturation; sensitive to ESD during handling.
Emitter	Reference terminal for base-emitter junction	Serves as common return for load current; polarity defines NPN operation-emitter must be at lowest potential in circuit.

Key Features

Feature	Design Value
Epitaxial base structure	Enables stable h_FE over temperature and improved f_T vs. diffused-base alternatives.
Power Mini Mold package	Offers TO-220F mechanical form factor with integrated collector-tab insulation for simplified thermal design.
Guaranteed h_FE range	120–270 at I_C = 500 mA ensures consistent biasing across production lots without individual trimming.
High V_CEO	150 V rating supports use in 100 V DC bus interfaces and flyback snubber circuits without derating.
100 MHz f_T	Permits reliable operation in audio preamplifiers and PWM-controlled DC-DC feedback paths up to 20 kHz.

Applications

Relay Driver Stage	Linear Voltage Regulator Pass Element
Use Scenario: Driving 12 V/24 V electromagnetic relays in industrial PLC I/O modules. IC Role / Device Role / Timing Role: NPN switch controlling relay coil current with forced β ≈ 10 for robust saturation. Use Value: 1.5 A I_C rating accommodates relay inrush currents; 150 V V_CEO prevents breakdown during coil flyback transients.	Use Scenario: Series pass transistor in adjustable 3–30 V, 1 A linear regulators for test equipment power supplies. IC Role / Device Role / Timing Role: Continuously biased active-mode amplifier dissipating up to 1 W under worst-case dropout. Use Value: 1 W P_D and 100°C/W R_θJA allow operation with minimal heatsink in benchtop enclosures.
DC Motor Speed Control	Audio Output Stage (Class-A)
Use Scenario: Low-frequency PWM-driven H-bridge half-bridge in 24 V brushed DC motor controllers. IC Role / Device Role / Timing Role: High-side or low-side switching element toggled at ≤5 kHz with resistive base drive. Use Value: 100 MHz f_T ensures full turn-on/turn-off within 1 µs, minimizing switching losses at 5 kHz.	Use Scenario: Single-ended Class-A audio amplifier stage delivering <100 mW into 8 Ω loads in portable audio gear. IC Role / Device Role / Timing Role: Linear amplification device biased at I_C = 100–300 mA with fixed V_CE ≈ 6 V. Use Value: Stable h_FE across I_C = 10–500 mA enables predictable quiescent point setting and THD <1% at 1 kHz.

Relay Driver Stage

Linear Voltage Regulator Pass Element

Use Scenario: Driving 12 V/24 V electromagnetic relays in industrial PLC I/O modules.

IC Role / Device Role / Timing Role: NPN switch controlling relay coil current with forced β ≈ 10 for robust saturation.

Use Value: 1.5 A I_C rating accommodates relay inrush currents; 150 V V_CEO prevents breakdown during coil flyback transients.

Use Scenario: Series pass transistor in adjustable 3–30 V, 1 A linear regulators for test equipment power supplies.

IC Role / Device Role / Timing Role: Continuously biased active-mode amplifier dissipating up to 1 W under worst-case dropout.

Use Value: 1 W P_D and 100°C/W R_θJA allow operation with minimal heatsink in benchtop enclosures.

DC Motor Speed Control

Audio Output Stage (Class-A)

Use Scenario: Low-frequency PWM-driven H-bridge half-bridge in 24 V brushed DC motor controllers.

IC Role / Device Role / Timing Role: High-side or low-side switching element toggled at ≤5 kHz with resistive base drive.

Use Value: 100 MHz f_T ensures full turn-on/turn-off within 1 µs, minimizing switching losses at 5 kHz.

Use Scenario: Single-ended Class-A audio amplifier stage delivering <100 mW into 8 Ω loads in portable audio gear.

IC Role / Device Role / Timing Role: Linear amplification device biased at I_C = 100–300 mA with fixed V_CE ≈ 6 V.

Use Value: Stable h_FE across I_C = 10–500 mA enables predictable quiescent point setting and THD <1% at 1 kHz.

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN power transistor applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
2SC4110-T1-AZ	V_CEO = 120 V, h_FE = 100–240, P_D = 1 W - lower voltage rating, same package.	Not suitable for 150 V bus applications; acceptable for 24–48 V relay/motor control where margin is adequate.	Select when cost sensitivity outweighs need for 150 V headroom and gain consistency is secondary.
MJD127G	V_CEO = 100 V, I_C = 2 A, P_D = 1.5 W, TO-252 package - higher current, lower voltage, surface-mount.	Requires PCB redesign for SMT layout; unsuitable for through-hole legacy designs or high-voltage transient environments.	Choose for new SMT designs needing >1.5 A capability and thermal performance exceeding 2SD1614-T1-AZ's 1 W limit.

Compared with 2SD1614-T1-AZ, 2SC4110-T1-AZ trades voltage margin for identical form factor, while MJD127G offers higher current and power in a different package-neither is pin-compatible, and both require validation of SOA and drive requirements in the target circuit.

Availability

2SD1614-T1-AZ is available at Aetrix Electronics and suitable for industrial automation, test equipment, and consumer power electronics requiring stable component supply, long-term obsolescence management, and RoHS-compliant sourcing.

Supply support for 2SD1614-T1-AZ includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor manufacturer formed in 2010 via merger of NEC Electronics and Renesas Technology, specializing in microcontrollers, analog, and discrete power devices.

The 2SD1614-T1-AZ belongs to Renesas' legacy silicon power transistor product line, designed for cost-sensitive, medium-power linear and switching applications in standard-grade industrial and consumer equipment.

FAQ

What is the maximum junction temperature for the 2SD1614-T1-AZ?

The 2SD1614-T1-AZ has a maximum rated junction temperature (T_J) of 150°C. This value defines the upper thermal limit for safe operation; exceeding it risks permanent degradation of h_FE and increased leakage. Derating of P_D is required above T_A = 25°C per the R_θJA = 100°C/W specification. Always verify actual T_J using measured case temperature and thermal model in final 2SD1614-T1-AZ application layouts.

Is the 2SD1614-T1-AZ RoHS compliant?

Yes, the 2SD1614-T1-AZ is RoHS compliant per EU Directive 2011/65/EU, as confirmed by Renesas Electronics' material declarations and manufacturing records. Lead-free soldering profiles compatible with SnAgCu (SAC305) are supported, and the Power Mini Mold package contains no intentionally added restricted substances. Full compliance documentation for 2SD1614-T1-AZ is available upon request from Aetrix Electronics.

Can the 2SD1614-T1-AZ replace the 2SD1047 in existing designs?

No, the 2SD1614-T1-AZ is not a functional replacement for the 2SD1047. The 2SD1047 is a higher-power complementary NPN transistor (V_CEO = 140 V, I_C = 10 A, P_D = 100 W) in TO-3P package, whereas the 2SD1614-T1-AZ is rated for 1.5 A and 1 W in Power Mini Mold. Substituting 2SD1614-T1-AZ for 2SD1047 would result in immediate thermal failure and insufficient current handling-always verify datasheet parameters before cross-referencing 2SD1614-T1-AZ.

What is the typical storage temperature range for the 2SD1614-T1-AZ?

The 2SD1614-T1-AZ is specified for storage between –55°C and +150°C, matching its operational junction temperature limits. Long-term storage above +40°C in humid environments may affect solderability; Renesas recommends dry-packaging and moisture sensitivity level (MSL) handling per J-STD-020, though the 2SD1614-T1-AZ is not moisture-sensitive due to its molded plastic construction. Store original reels of 2SD1614-T1-AZ in climate-controlled areas below 30°C and 60% RH.

Does the 2SD1614-T1-AZ have built-in protection features like thermal shutdown or overcurrent limiting?

No, the 2SD1614-T1-AZ is a fundamental bipolar junction transistor with no integrated protection circuitry. It lacks thermal shutdown, overcurrent limiting, or safe operating area (SOA) enforcement logic. Protection must be implemented externally-using base current limiting resistors, collector snubbers, heatsink-mounted thermistors, or current-sense feedback in the driver stage. System-level reliability for 2SD1614-T1-AZ depends entirely on external design safeguards.

2SD1614-T1-AZ Specifications

Product attributes: Attribute value

Manufacturer:: Renesas

Series:: -

Package/Case:: TO-243AA

Packaging:: Bulk

Product Status:: Active

Transistor Type:: NPN

Current - Collector (Ic) (Max):: 2 A

Voltage - Collector Emitter Breakdown (Max):: 20 V

Vce Saturation (Max) @ Ib, Ic:: 500mV @ 50mA, 2A

Current - Collector Cutoff (Max):: 100nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce:: 135 @ 100mA, 2V

Power - Max:: 2 W

Frequency - Transition:: 200MHz

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: SC-62

2SD1614-T1-AZ FAQ

1.How can I place an order for 2SD1614-T1-AZ through Aetrix?

Please submit a Request for Quotation (RFQ) for 2SD1614-T1-AZ on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 2SD1614-T1-AZ reliable?

The price and inventory of 2SD1614-T1-AZ are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 2SD1614-T1-AZ is usually 5 days.

3.What payment methods are accepted for 2SD1614-T1-AZ?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 2SD1614-T1-AZ transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for 2SD1614-T1-AZ?

2SD1614-T1-AZ orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 2SD1614-T1-AZ order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 2SD1614-T1-AZ?

For technical support, including 2SD1614-T1-AZ datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 2SD1614-T1-AZ requirements.

6.How does Aetrix verify that 2SD1614-T1-AZ is sourced from the original manufacturer or authorized distributors?

All 2SD1614-T1-AZ products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 2SD1614-T1-AZ meets industry standards.

7.What is the process for return or replacement of 2SD1614-T1-AZ?

All 2SD1614-T1-AZ units undergo pre-shipment inspection (PSI). If there is an issue with 2SD1614-T1-AZ, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 2SD1614-T1-AZ part is unused and in its original packaging.

Return procedure for 2SD1614-T1-AZ:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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