onsemi 2SD1618T-TD-E

Overview

2SD1618T-TD-E from onsemi is an NPN bipolar junction transistor in PCP (SOT-89) package, rated for 15 V V_CEO, 0.7 A I_C, and low 30–80 mV V_CE(sat) at 100 mA/10 mA drive, optimized for high-density hybrid ICs and switching applications in power management circuits.

For engineers reviewing the 2SD1618T-TD-E datasheet, pinout, applications, or equivalent options, key selection criteria include verified h_FE range (200–400), f_T = 250 MHz, V_BE(sat) ≤ 1.2 V, Cob = 8 pF, and thermal performance on ceramic substrate (1.3 W P_C).

Technical Context

This NPN transistor operates with a guaranteed DC current gain of 200–400 at I_C = 50 mA and V_CE = 2 V, and maintains usable gain up to 250 MHz f_T. Its low V_CE(sat) (max 80 mV at 100 mA) enables efficient low-voltage switching in compact power stages.

The device is characterized for operation from –55°C to +150°C junction temperature, with absolute maximum ratings including V_CBO = 20 V, V_EBO = 5 V, and I_CP = 1.5 A (pulse). It is not rated for automotive safety-critical or medical implant use.

Key Specifications

Pinout & Package

Package: PCP (JEITA SC-62 / JEDEC SOT-89 / ON Semiconductor TO-243), surface-mount, 3-terminal plastic case with exposed collector tab for thermal conduction.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN switching transistor applications.

Compared with MMBT2222ALT1G and ZTX653, the 2SD1618T-TD-E uniquely balances 0.7 A current capability, 1.3 W ceramic-mount dissipation, and SOT-89 footprint-making it optimal for compact, medium-power switching where thermal density matters.

Availability

2SD1618T-TD-E is available at Aetrix Electronics and suitable for DC-DC converters, LED drivers, hybrid IC modules, and signal-level switching applications requiring stable component supply and Pb-free compliance.

Supply support for 2SD1618T-TD-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

onsemi (formerly ON Semiconductor) is a global semiconductor supplier focused on energy-efficient innovation for automotive, industrial, cloud, and IoT applications.

The 2SD1618T-TD-E belongs to onsemi's general-purpose bipolar transistor family designed for high-density, thermally efficient switching and amplification in hybrid and surface-mount power modules.

FAQ

What is the h_FE range for 2SD1618T-TD-E?

The 2SD1618T-TD-E is binned to Rank T, with a guaranteed DC current gain (h_FE) of 200 to 400 when measured at V_CE = 2 V and I_C = 50 mA. This tight binning allows predictable base drive design without margining for gain variation. The 2SD1618T-TD-E datasheet specifies no minimum h_FE at higher currents, but h_FE2 ≥ 60 is assured at I_C = 500 mA.

Is 2SD1618T-TD-E RoHS and Pb-free compliant?

Yes, the 2SD1618T-TD-E is Pb-free and RoHS-compliant, as confirmed by its "-E" suffix and packaging specification in the official onsemi datasheet (Ordering Information section). It meets JEDEC J-STD-020 moisture sensitivity level 1 and is qualified for lead-free reflow soldering per IPC/JEDEC J-STD-020.

What is the thermal resistance of 2SD1618T-TD-E on ceramic substrate?

When mounted on a 250 mm² × 0.8 mm ceramic substrate without heatsink, the 2SD1618T-TD-E achieves a maximum collector dissipation of 1.3 W. Its thermal resistance from junction-to-ambient (R_θJA) under this condition is approximately 115°C/W, derived from (T_j − T_a) / P_C = (150 − 25) / 1.3. This value assumes no additional airflow or copper pour beyond the specified substrate.

Can 2SD1618T-TD-E replace 2SD1618S-TD-E in a design?

Yes, the 2SD1618T-TD-E can replace the 2SD1618S-TD-E in most applications, as both share identical package (PCP/SOT-89), pinout, and absolute maximum ratings. The only difference is h_FE binning: S rank is 140–280, while T rank is 200–400. If the circuit relies on minimum h_FE ≥ 200, the 2SD1618T-TD-E provides tighter assurance than the S variant.

What is the maximum safe operating frequency for 2SD1618T-TD-E?

The 2SD1618T-TD-E has a gain-bandwidth product (f_T) of 250 MHz, meaning it retains unity current gain up to that frequency under specified test conditions (V_CE = 10 V, I_C = 50 mA). For practical switching applications, reliable operation is confirmed up to 500 kHz in hard-switched DC-DC converters; RF amplification is viable up to ~100 MHz depending on bias and layout parasitics.