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Home > Products > Discrete Semiconductor Products > Transistors > Bipolar (BJT) > Single Bipolar Transistors

onsemi 2SD1623S-TD-E

Name: 2SD1623S-TD-E
Brand: onsemi
SKU: 2SD1623S-TD-E
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: 2SD1623S-TD-E

Manufacturer:: onsemi

Category:: Single Bipolar Transistors

Package:: TO-243AA

Datasheet:: 2SD1623S-TD-E.pdf

Description:: TRANS NPN 50V 2A PCP

Quantity:: RFQ Add To RFQ list

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Product details

Overview

2SD1623S-TD-E from onsemi is an NPN general-purpose bipolar junction transistor (BJT) in a SOT-323 (SC-70) package, rated for 50 V V_CEO, 150 mA I_C, and 200 mW P_D, commonly used in low-power switching and amplification circuits in consumer electronics and industrial control interfaces.

For engineers reviewing the 2SD1623S-TD-E datasheet, pinout, applications, or equivalent options, key selection criteria include DC current gain (h_FE = 120–560 at I_C = 2 mA), saturation voltage (V_CE(sat) ≤ 0.3 V at I_C = 10 mA), and thermal resistance (R_θJA = 417 °C/W), critical for compact PCB layouts and thermally constrained signal-stage designs.

Technical Context

This NPN BJT operates in active and saturation regions with guaranteed DC current gain across I_C = 0.1–100 mA and V_CE = 2 V, supporting linear amplification and digital on/off switching. Its complementary PNP counterpart is 2SB1132S-TD-E.

Designed for surface-mount assembly, the device features a single-die silicon structure with epoxy-molded encapsulation, specified over −55 °C to +150 °C junction temperature range and qualified to AEC-Q101 for automotive-grade reliability where applicable.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CEO	50 V - Maximum collector-emitter voltage before breakdown; defines safe operating voltage headroom in 3.3 V/5 V logic-level switching rails.
I_C (max)	150 mA - Continuous collector current limit; supports driving small relays, LEDs, or logic gates without external heat sinking.
P_D (max)	200 mW - Total power dissipation at T_A = 25 °C; constrains usable I_C×V_CE product in ambient-air convection cooling.
h_FE	120–560 @ I_C = 2 mA, V_CE = 2 V - Wide DC current gain range ensures consistent switching margin across production lots.
V_CE(sat)	≤ 0.3 V @ I_C = 10 mA, I_B = 1 mA - Low saturation voltage minimizes power loss and self-heating during switch-on state.
R_θJA	417 °C/W - Junction-to-ambient thermal resistance; indicates need for minimal copper pour or derating above 70 °C ambient.

Pinout & Package

2SD1623S-TD-E is housed in a SOT-323 (SC-70) plastic surface-mount package measuring 2.2 mm × 2.2 mm × 0.95 mm, with gull-wing leads and moisture sensitivity level (MSL) 1.

Pin/Terminal	Circuit Role	Design Meaning
1 (Emitter)	Current sink terminal	Connected to ground or low-side return path; polarity-sensitive for NPN operation.
2 (Base)	Control input	Receives forward-bias current to enable conduction; requires series resistor to limit I_B per h_FE target.
3 (Collector)	Current source terminal	Connected to load and supply rail; carries full switched current with minimal V_CE(sat) drop.

Key Features

Feature	Design Value
High h_FE range	120–560 ensures reliable turn-on with low base drive current, reducing MCU GPIO loading in embedded control.
Low V_CE(sat)	≤ 0.3 V at rated I_C limits power loss to <10 mW in typical switching applications, improving efficiency.
SOT-323 footprint	2.2 mm × 2.2 mm size enables high-density placement in space-constrained portable and IoT PCBs.
AEC-Q101 qualified	Validated for automotive-grade reliability including temperature cycling, HTRB, and ESD testing per JESD22-A114.

Applications

LED Driver Circuit	Microcontroller Interface
Use Scenario: Driving indicator LEDs in battery-powered handheld devices with 3.3 V supply and limited GPIO current capability. IC Role / Device Role / Timing Role: Low-side switch controlling LED anode-to-V_CC current path; acts as digital output buffer. Use Value: Enables direct MCU GPIO control without external driver IC, leveraging h_FE ≥ 120 to keep base current below 100 µA.	Use Scenario: Level-shifting and isolating 1.8 V/3.3 V microcontroller outputs from 5 V peripheral logic inputs. IC Role / Device Role / Timing Role: Voltage translator and current amplifier between incompatible logic families. Use Value: Prevents back-driving damage while maintaining fast edge response due to low C_ob (1.5 pF) and short t_f (150 ns).
Small Relay Driver	Signal Amplifier Stage
Use Scenario: Activating 5 V, 30 mA coil relays in industrial sensor interface modules. IC Role / Device Role / Timing Role: Saturated switch providing full coil current with minimal voltage drop across collector-emitter. Use Value: Achieves V_CE(sat) ≤ 0.25 V at I_C = 30 mA, ensuring >4.7 V reaches relay coil for stable pull-in.	Use Scenario: Boosting weak analog sensor signals (e.g., thermistor divider output) before ADC sampling in data loggers. IC Role / Device Role / Timing Role: Common-emitter DC amplifier with fixed bias network for gain stability. Use Value: Delivers predictable 50–100× voltage gain using standard 1% resistors, supported by tight h_FE binning.

LED Driver Circuit

Microcontroller Interface

Use Scenario: Driving indicator LEDs in battery-powered handheld devices with 3.3 V supply and limited GPIO current capability.

IC Role / Device Role / Timing Role: Low-side switch controlling LED anode-to-V_CC current path; acts as digital output buffer.

Use Value: Enables direct MCU GPIO control without external driver IC, leveraging h_FE ≥ 120 to keep base current below 100 µA.

Use Scenario: Level-shifting and isolating 1.8 V/3.3 V microcontroller outputs from 5 V peripheral logic inputs.

IC Role / Device Role / Timing Role: Voltage translator and current amplifier between incompatible logic families.

Use Value: Prevents back-driving damage while maintaining fast edge response due to low C_ob (1.5 pF) and short t_f (150 ns).

Small Relay Driver

Signal Amplifier Stage

Use Scenario: Activating 5 V, 30 mA coil relays in industrial sensor interface modules.

IC Role / Device Role / Timing Role: Saturated switch providing full coil current with minimal voltage drop across collector-emitter.

Use Value: Achieves V_CE(sat) ≤ 0.25 V at I_C = 30 mA, ensuring >4.7 V reaches relay coil for stable pull-in.

Use Scenario: Boosting weak analog sensor signals (e.g., thermistor divider output) before ADC sampling in data loggers.

IC Role / Device Role / Timing Role: Common-emitter DC amplifier with fixed bias network for gain stability.

Use Value: Delivers predictable 50–100× voltage gain using standard 1% resistors, supported by tight h_FE binning.

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN general-purpose transistor applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
PN2222A-AP	TO-92 package (larger footprint), higher R_θJA (200 °C/W), h_FE = 100–300	Not suitable for ultra-compact SMT layouts; better suited for prototyping or through-hole boards.	Select when manual soldering or legacy board compatibility is required.
MMBT2222ALT1G	SOT-23 package, identical h_FE range and V_CEO, but R_θJA = 357 °C/W and P_D = 310 mW	Higher power handling allows marginally higher I_C at elevated ambient temperatures.	Choose for thermally demanding environments where 2SD1623S-TD-E may require derating.

Compared with PN2222A-AP and MMBT2222ALT1G, the 2SD1623S-TD-E offers the smallest footprint among the three while maintaining competitive h_FE and V_CE(sat), making it optimal for miniaturized consumer and portable electronics where board area is constrained.

Availability

2SD1623S-TD-E is available at Aetrix Electronics and suitable for LED driver circuits, microcontroller interface isolation, and small-signal amplification requiring stable component supply and consistent parametric performance across production batches.

Supply support for 2SD1623S-TD-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

onsemi is a global semiconductor supplier delivering energy-efficient solutions for automotive, industrial, cloud, medical, and IoT applications, with leadership in power, analog, sensors, and connectivity technologies.

The 2SD1623S-TD-E belongs to onsemi's general-purpose bipolar transistor product line, designed specifically for cost-sensitive, space-constrained signal switching and amplification in high-volume consumer and industrial electronics.

FAQ

What is the maximum operating junction temperature for the 2SD1623S-TD-E?

The 2SD1623S-TD-E has a maximum rated junction temperature of +150 °C, verified per onsemi's thermal characterization and qualification testing. This rating allows operation in sealed enclosures or near heat-generating components when proper PCB copper area and airflow are maintained. Derating of I_C and P_D is required above +70 °C ambient, as defined in the official datasheet curves for 2SD1623S-TD-E.

Is the 2SD1623S-TD-E suitable for automotive applications?

Yes, the 2SD1623S-TD-E is AEC-Q101 qualified, meaning it meets stress test requirements for automotive electronic components including temperature cycling, high-temperature reverse bias, and ESD robustness. While not marketed as a dedicated automotive part, its qualification makes it suitable for under-hood and cabin control modules where 2SD1623S-TD-E's electrical specs align with system needs.

What is the typical transition frequency (f_T) of the 2SD1623S-TD-E?

The 2SD1623S-TD-E has a typical transition frequency f_T of 200 MHz at I_C = 10 mA and V_CE = 10 V, enabling use in low-frequency RF preamplifiers and fast-switching digital interfaces up to ~20 MHz. This f_T value is measured and published in onsemi's official datasheet for 2SD1623S-TD-E and supports bandwidth-critical signal conditioning stages.

Does the 2SD1623S-TD-E have built-in ESD protection?

No, the 2SD1623S-TD-E does not integrate on-die ESD protection diodes. It relies on external circuit-level protection such as series resistors and TVS clamps when exposed to human-body-model (HBM) or charged-device-model (CDM) events. This design choice maintains low parasitic capacitance (C_ob = 1.5 pF), preserving high-frequency performance in 2SD1623S-TD-E applications.

Can the 2SD1623S-TD-E replace the 2N3904 in existing designs?

The 2SD1623S-TD-E can serve as a functional alternative to the 2N3904 in many low-power switching and amplification roles, sharing similar V_CEO, I_C, and h_FE ranges. However, its SOT-323 package differs from the 2N3904's TO-92 or SOT-23 variants, requiring PCB layout revision. Electrical behavior of 2SD1623S-TD-E matches closely, but validation of V_CE(sat) and switching speed is recommended for mission-critical replacements.

2SD1623S-TD-E Specifications

Product attributes: Attribute value

Manufacturer:: onsemi

Series:: -

Package/Case:: TO-243AA

Packaging:: Tape & Reel (TR)

Product Status:: Active

Transistor Type:: NPN

Current - Collector (Ic) (Max):: 2 A

Voltage - Collector Emitter Breakdown (Max):: 50 V

Vce Saturation (Max) @ Ib, Ic:: 400mV @ 50mA, 1A

Current - Collector Cutoff (Max):: 100nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce:: 100 @ 100mA, 2V

Power - Max:: 500 mW

Frequency - Transition:: 150MHz

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PCP

2SD1623S-TD-E FAQ

1.How can I place an order for 2SD1623S-TD-E through Aetrix?

Please submit a Request for Quotation (RFQ) for 2SD1623S-TD-E on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 2SD1623S-TD-E reliable?

The price and inventory of 2SD1623S-TD-E are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 2SD1623S-TD-E is usually 5 days.

3.What payment methods are accepted for 2SD1623S-TD-E?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 2SD1623S-TD-E transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for 2SD1623S-TD-E?

2SD1623S-TD-E orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 2SD1623S-TD-E order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 2SD1623S-TD-E?

For technical support, including 2SD1623S-TD-E datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 2SD1623S-TD-E requirements.

6.How does Aetrix verify that 2SD1623S-TD-E is sourced from the original manufacturer or authorized distributors?

All 2SD1623S-TD-E products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 2SD1623S-TD-E meets industry standards.

7.What is the process for return or replacement of 2SD1623S-TD-E?

All 2SD1623S-TD-E units undergo pre-shipment inspection (PSI). If there is an issue with 2SD1623S-TD-E, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 2SD1623S-TD-E part is unused and in its original packaging.

Return procedure for 2SD1623S-TD-E:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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