onsemi 2SD1626-TD-E

Overview

2SD1626-TD-E from onsemi is an NPN epitaxial planar silicon transistor designed for driver-stage switching in relay, lamp, motor, and hammer drive circuits. It delivers 1.5 A continuous collector current, −1.5 V max V_CE(sat) at I_C = −500 mA / I_B = −0.5 mA, and DC current gain ≥4000 at V_CE = −2 V, supporting high-efficiency low-saturation switching in compact hybrid ICs.

For engineers reviewing the 2SD1626-TD-E datasheet, pinout, applications, or equivalent options, key selection criteria include verified h_FE ≥4000 at high I_C, V_CEO = −50 V rating, ceramic-board thermal derating (1.5 W), and TO-92MOD package compatibility with high-density layouts.

Technical Context

This NPN transistor operates as a medium-power linear/switching amplifier in driver stages where high DC current gain and low saturation voltage are critical. Its f_T = 120 MHz enables stable operation up to audio and low-RF frequencies, while its V_(BR)CEO = −50 V and V_(BR)CBO = −80 V support robust voltage margin in inductive load switching.

The device uses epitaxial planar construction for consistent h_FE performance across production lots and exhibits tight V_CE(sat) distribution (−0.9 V to −1.5 V) under standardized test conditions (I_C = −500 mA, I_B = −0.5 mA), enabling predictable base drive design without overdesign.

Key Specifications

Pinout & Package

2SD1626-TD-E is housed in a TO-92MOD plastic package (JEDEC TO-226 variant), optimized for automated insertion and high-density PCB layout. Dimensions match standard TO-92 footprints with modified lead spacing for improved mechanical stability.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN driver transistor applications.

Compared with 2SD1626-TD-E, the 2SD1733-TD-E trades gain for voltage headroom, while BCX56-16 sacrifices h_FE for broader availability and lower cost-neither is pin-compatible, but both serve overlapping driver roles with distinct design trade-offs.

Availability

2SD1626-TD-E is available at Aetrix Electronics and suitable for relay driver circuits, lamp driver circuits, and motor driver stages requiring stable component supply, long-term manufacturability, and consistent parametric performance across production batches.

Supply support for 2SD1626-TD-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

onsemi (formerly ON Semiconductor) is a global semiconductor supplier specializing in energy-efficient power, analog, sensor, and connectivity solutions for automotive, industrial, and cloud infrastructure markets.

The 2SD1626-TD-E belongs to onsemi's general-purpose bipolar transistor product line, engineered specifically for high-gain, low-saturation switching in compact driver applications where thermal efficiency and layout density are critical.

FAQ

What is the maximum continuous collector current rating for the 2SD1626-TD-E?

The 2SD1626-TD-E has a maximum continuous collector current (I_C) rating of −1.5 A at T_a = 25°C when mounted on a ceramic board (250 mm² × 0.8 mm). This rating assumes proper PCB thermal design; derating applies above 25°C ambient per the published P_C vs. T_a curve. The 2SD1626-TD-E maintains this current capability while sustaining h_FE ≥4000 and V_CE(sat) ≤ −1.5 V under defined test conditions.

Does the 2SD1626-TD-E have a documented pulse current rating?

Yes, the 2SD1626-TD-E supports a peak collector current (I_CP) of −3 A under pulsed conditions, as specified in the Absolute Maximum Ratings table. This rating applies to short-duration pulses (e.g., ≤10 ms) with appropriate duty cycle and thermal management. The 2SD1626-TD-E is commonly used in hammer driver applications leveraging this pulse capability, where repetitive 10–100 ms actuation pulses remain within safe SOA limits.

What is the DC current gain (h_FE) specification for the 2SD1626-TD-E at operating conditions?

The 2SD1626-TD-E guarantees h_FE ≥4000 at V_CE = −2 V and I_C = −500 mA, and ≥3000 at V_CE = −2 V and I_C = −10 mA. These values are measured and binned per datasheet test conditions. The 2SD1626-TD-E achieves this high gain through epitaxial planar process control, enabling microcontroller-level base drive without additional amplification stages.

Is the 2SD1626-TD-E compatible with standard TO-92 footprints?

The 2SD1626-TD-E uses a TO-92MOD package, which shares the same outline and lead count as standard TO-92 but features modified lead spacing and form for enhanced mechanical reliability in automated assembly. While it fits many TO-92 land patterns, designers should verify pad pitch (2.54 mm between E–B and B–C) and lead coplanarity before layout integration. The 2SD1626-TD-E is not guaranteed to be drop-in compatible with legacy TO-92 parts without verification.

What thermal performance can be expected from the 2SD1626-TD-E on standard FR-4 PCBs?

onsemi specifies the 2SD1626-TD-E's 1.5 W power dissipation rating only when mounted on a 250 mm² × 0.8 mm ceramic board. On standard FR-4, the usable power dissipation is significantly lower-typically ≤500 mW without copper pour or thermal vias. For reliable operation on FR-4, the 2SD1626-TD-E should be used at reduced I_C or with ≥1 in² (645 mm²) of 2-oz copper connected to the collector pad via ≥4 thermal vias to maintain junction temperature below 150°C.