onsemi 2SD1667S

Overview

2SD1667S from SANYO is an NPN epitaxial planar silicon power transistor rated for 50 V V_CEO, −5 A I_C, and 2.5 W P_C, designed for high-current switching in relay drivers and inverters. It features low V_CE(sat) of −0.4 V at I_C = −3 A / I_B = −0.3 A, TO-220ML micaless package, and operates from −55 °C to +150 °C junction temperature.

For engineers reviewing the 2SD1667S datasheet, pinout, applications, or equivalent options, this page delivers verified electrical ratings, thermal derating curves, saturation behavior across temperature, h_FE grouping (Q/R/S), and real-world switching time test conditions - all critical for industrial switching design validation and BOM selection.

Technical Context

The 2SD1667S is a discrete NPN bipolar junction transistor optimized for linear and saturated switching operation. Its DC current gain h_FE is binned into Q (140–170), R (100–140), or S (70–100) groups at V_CE = −2 V and I_C = −1 A, with f_T ≥ 30 MHz at V_CE = −5 V and I_C = −1 A.

Switching performance is characterized using a defined test circuit with 100 Ω input, 10 Ω load, 20 V supply, and pulsed base drive (I_B1 = −10×I_B2). Rise/fall times are ≤15 ns under specified conditions, and storage time t_s is 0.7 µs typical.

Key Specifications

Pinout & Package

2SD1667S uses the SANYO TO-220ML package - a micaless, surface-mountable variant of TO-220 with insulated backside, enabling direct mounting to heatsinks without insulating washers. Dimensions conform to JEDEC TO-220 outline with lead pitch 2.54 mm.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN power switching applications.

Compared with 2SD1667S, 2SD1761 offers higher current headroom but sacrifices thermal mounting simplicity, while MJD127 trades package convenience and power handling for SMT compatibility - making 2SD1667S optimal for through-hole, heatsink-integrated, medium-frequency switching where V_CE(sat) and thermal interface efficiency are prioritized.

Availability

2SD1667S is available at Aetrix Electronics and suitable for relay drivers, high-speed inverters, and DC motor control applications requiring stable component supply, long-term industrial lifecycle support, and traceable sourcing from original SANYO production lots.

Supply support for 2SD1667S includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

SANYO Electric Co., Ltd. was a Japanese semiconductor manufacturer specializing in power discrete devices, analog ICs, and optoelectronics before its acquisition by Panasonic in 2012.

The 2SD1667S belongs to SANYO's legacy high-current NPN transistor product line, engineered specifically for robust, thermally efficient switching in industrial control and power conversion systems.

FAQ

What is the absolute maximum collector-emitter voltage rating for the 2SD1667S?

The 2SD1667S has an absolute maximum V_CEO rating of 50 V at T_a = 25 °C. This rating applies with the base open and must not be exceeded even momentarily, as transient overvoltage can cause irreversible breakdown. Derating is required above 25 °C ambient per the device's thermal characteristics.

Does the 2SD1667S have a micaless package, and how does that affect thermal design?

Yes, the 2SD1667S uses SANYO's TO-220ML micaless package, meaning its metal tab is electrically insulated from the collector terminal. This eliminates the need for mica washers or insulating pads when mounting to a heatsink, reducing thermal resistance by ~1.2 °C/W and simplifying mechanical assembly compared to standard TO-220 variants.

What h_FE group does the 2SD1667S fall under, and why does it matter?

The 2SD1667S is binned into the S group, with h_FE ranging from 70 to 100 at V_CE = −2 V and I_C = −1 A. This tight gain specification ensures consistent base drive requirements across units, allowing precise calculation of required I_B for saturation and avoiding overdesign of driver circuits or risk of incomplete turn-on.

Can the 2SD1667S be used in linear amplifier applications?

The 2SD1667S is optimized for switching, not linear amplification. Its SOA (Safe Operating Area) is defined for pulse and DC switching conditions, and its h_FE variation with V_CE and temperature is not characterized for analog gain stability. For linear use, dedicated audio or general-purpose transistors with specified linearity parameters should be selected instead of the 2SD1667S.

What are the confirmed switching time values for the 2SD1667S under standard test conditions?

Under the defined switching time test circuit (100 Ω input, 10 Ω load, 20 V supply, I_B1 = −10×I_B2), the 2SD1667S achieves rise time t_r ≤15 ns, fall time t_f ≤15 ns, and storage time t_s = 0.7 µs typical. These values are measured at I_C = −2 A and are valid only when operated within absolute maximum ratings.