onsemi 2SD1682S

Overview

2SD1682S from SANYO is an NPN epitaxial planar silicon transistor designed for high-speed switching in power supply, relay driver, and lamp driver circuits. It features a 50 V V_CEO, 2.5 A I_C, 1.5 W P_C, low V_CE(sat) of –100 mV at I_C = –1 A / I_B = –50 mA, and f_T = 140 MHz - enabling efficient, fast-turnoff operation in medium-power DC switching applications.

For engineers reviewing the 2SD1682S datasheet, pinout, applications, or equivalent options, key selection considerations include its TO-126ML package thermal performance, h_FE binning (140–200 at I_C = –100 mA), saturation voltage behavior across temperature, and safe operating area (ASO) limits under pulsed conditions.

Technical Context

This NPN transistor uses SANYO's FBET and MBIT processes to achieve low saturation voltage and wide active safe operating area. Its 50 V V_CEO rating supports use in 24–48 V industrial control rails, while its 140 MHz f_T enables reliable switching up to ~10 MHz with appropriate drive.

Electrical characteristics are specified at T_j = 150 °C max and validated across –55 °C to +150 °C storage range. The device exhibits h_FE variation from 100 to 200 depending on I_C and V_CE, with typical gain of 140 at I_C = –100 mA and V_CE = –2 V.

Key Specifications

Pinout & Package

SANYO specifies the 2SD1682S in the TO-126ML package - a thermally enhanced variant of TO-126 with metalized backside for direct heatsink mounting and improved thermal resistance (R_θJC ≈ 3.3 °C/W).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN high-speed switching applications.

Compared with 2SD1682S, 2SD1733 offers greater voltage headroom but sacrifices bandwidth, while MJD122G provides higher power handling at the cost of switching fidelity - making 2SD1682S the optimal balance of speed, saturation efficiency, and thermal integration for 24–48 V medium-speed switching.

Availability

2SD1682S is available at Aetrix Electronics and suitable for industrial relay drivers, DC lamp drivers, and switch-mode power supply control requiring stable component supply and long-term manufacturing continuity.

Supply support for 2SD1682S includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

SANYO Electric Co., Ltd. was a Japanese semiconductor manufacturer specializing in power discrete devices, analog ICs, and optoelectronics before its acquisition by Panasonic in 2012.

The 2SD1682S belongs to SANYO's high-speed bipolar transistor family engineered for industrial-grade switching applications demanding reliability, low saturation loss, and thermal robustness in TO-126ML packaging.

FAQ

What is the maximum junction temperature rating for the 2SD1682S?

The 2SD1682S has a maximum junction temperature (T_j) of +150 °C, as confirmed in its Absolute Maximum Ratings table. This rating applies under continuous operation with proper heatsinking and must be derated linearly above T_c = 25 °C. Thermal design must ensure that actual T_j remains below this limit during worst-case load and ambient conditions to maintain reliability and parametric stability of the 2SD1682S.

Does the 2SD1682S have a built-in base-emitter resistor?

No, the 2SD1682S is a standard three-terminal NPN bipolar junction transistor without any integrated base-emitter resistors. It requires external base drive circuitry - typically a series current-limiting resistor - to establish proper I_B for saturation. This is confirmed by its pinout (Emitter, Collector, Base) and absence of "R" or "BRT" designation in the part number or datasheet features. External bias network design is essential for stable operation of the 2SD1682S.

What is the safe operating area (SOA) limit for pulsed operation of the 2SD1682S?

The 2SD1682S SOA curve shows it supports up to 5 A peak collector current at V_CE = –20 V for 10 ms pulses, as illustrated in the "ASO" graph (No.2060–4/4). This pulsed capability exceeds its DC rating of 2.5 A and enables robust handling of inductive kickback and motor inrush. Designers must verify pulse width, duty cycle, and thermal accumulation to avoid exceeding the SOA boundary for the 2SD1682S in transient conditions.

Is the 2SD1682S RoHS compliant?

The original SANYO datasheet (dated October 2003) predates RoHS enforcement and does not declare RoHS compliance. As a legacy SANYO part manufactured prior to 2006, the 2SD1682S is not guaranteed RoHS-compliant unless explicitly requalified and marked by a current authorized distributor. For new designs requiring RoHS adherence, consult Aetrix Electronics for verified compliant alternatives or reprocessed lots bearing appropriate marking for the 2SD1682S.

How does h_FE vary with temperature for the 2SD1682S?

The 2SD1682S exhibits positive h_FE temperature coefficient: h_FE increases by ~0.5× per 10 °C rise near room temperature, as shown in the h_FE vs. I_C curves across –25 °C, 25 °C, and 75 °C. At I_C = –100 mA, typical h_FE rises from ~140 at 25 °C to ~180 at 75 °C. This behavior must be accounted for in base drive design to prevent thermal runaway - especially critical in linear or quasi-saturated operation of the 2SD1682S.