onsemi 2SD1682T
- Part No.:
- 2SD1682T
- Manufacturer:
- onsemi
- Category:
- Single Bipolar Transistors
- Package:
- TO-225AA, TO-126-3
- Datasheet:
-
2SD1682T.pdf
- Description:
- TRANS NPN 50V 2.5A TO-126ML
- Quantity:
- Payment:

- Shipping:

Inventory:22,654
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Product details
Overview
2SD1682T from SANYO is an NPN epitaxial planar silicon transistor rated for 50V VCEO, 2.5A IC, and 1.5W PC at Tc=25°C, optimized for high-speed switching in relay drivers, lamp drivers, and DC power supplies. It features low VCE(sat) (−100 mV typ. at IC=−1A, IB=−10mA), fT = 140 MHz, and hFE = 140–400 at IC=−100mA.
For engineers reviewing the 2SD1682T datasheet, pinout, applications, or equivalent options, key selection criteria include verified VCE(sat) performance at 2.5A, TO-126ML package thermal resistance, hFE binning (RSTU grade), and safe operating area (ASO) compliance under pulsed switching conditions.
Technical Context
This device operates as a medium-power NPN bipolar junction transistor with FBET/MBIT process technology enabling fast turn-on/turn-off times (ton = 35 ns, toff = 30 ns) and stable gain across temperature (hFE maintained from −25°C to 75°C). Its VCEO = 50V and VCBO = 60V support robust voltage margin in inductive load switching.
The 2SD1682T is electrically characterized with fixed test conditions: VCE = −2V for hFE, VCB = −10V for Cob, and IC = −50mA for fT. Saturation parameters are specified at IC/IB = 20, matching standard driver interface design practices.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCEO | 50 V - Maximum collector-emitter voltage before breakdown; defines safe operating ceiling for 24V/48V DC supply switching. |
| IC (max) | 2.5 A - Continuous collector current rating; supports relay coils up to 2.5A and lamp loads >30W at 12V. |
| PC (Tc=25°C) | 1.5 W - Thermal power dissipation limit at case temperature; requires heatsinking above ~1.2A continuous operation. |
| VCE(sat) | −100 mV (typ.) at IC=−1A, IB=−10mA - Low saturation voltage reduces conduction loss and self-heating in high-duty-cycle switches. |
| fT | 140 MHz - Gain-bandwidth product enables stable operation up to ~10–20 MHz switching frequencies with adequate gain margin. |
| hFE | 140–400 (RSTU grade, IC=−100mA) - Tight DC current gain binning ensures predictable base drive requirements across production lots. |
| ton/toff | 35 ns / 30 ns - Fast switching times minimize transition losses and EMI generation in PWM-controlled loads. |
Pinout & Package
SANYO TO-126ML plastic molded package with integral heat slug; 3-pin through-hole mounting; pin 1 = Emitter, pin 2 = Collector (connected to tab), pin 3 = Base. Tab is electrically connected to collector for direct heatsink mounting with isolation washer required if heatsink is grounded.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (Emitter) | Current exit path for NPN operation | Connected to ground or low-side return; must handle full load current and be routed with low-inductance layout. |
| 2 (Collector) | Current entry path; tied to metal tab | Electrically common with heatsink-mounting surface; requires insulating pad when heatsink is grounded to avoid short circuit. |
| 3 (Base) | Control terminal for minority-carrier injection | Driven by TTL/CMOS-compatible logic via series resistor; base current must be sized per hFE bin and IC target. |
Key Features
| Feature | Design Value |
|---|---|
| Low VCE(sat) | −100 mV typical at IC=−1A ensures <0.1W conduction loss, critical for thermally constrained relay driver PCBs. |
| Wide ASO (Area of Safe Operation) | Validated up to 5A peak (10ms pulse) at VCE=20V - supports inductive kickback energy absorption without secondary breakdown. |
| High fT (140 MHz) | Enables clean square-wave switching at ≥10 MHz, reducing harmonic content and easing EMI filter design in high-frequency SMPS stages. |
| FBET/MBIT process | Delivers consistent hFE and VBE(sat) across temperature (−25°C to +75°C), minimizing base drive recalibration in industrial ambient. |
Applications
| Relay Driver Circuit | Lamp Dimming Module |
|---|---|
Use Scenario: Driving 24V/2A electromagnetic relays in PLC I/O modules with 5V microcontroller GPIO control. IC Role / Device Role / Timing Role: NPN switch amplifying logic-level base current to deliver full coil current; operates in saturation during ON state. Use Value: Low VCE(sat) limits relay coil voltage drop to ≤0.1V, ensuring reliable pull-in at end-of-life contact resistance. | Use Scenario: PWM-controlled 12V automotive incandescent lamp (28W) in dashboard backlighting system. IC Role / Device Role / Timing Role: High-current, high-speed switch modulating lamp current at 200 Hz–1 kHz; handles inductive flyback via built-in ASO margin. Use Value: 35 ns ton/30 ns toff minimizes dead-time distortion, preserving dimming linearity across 0–100% duty cycle. |
| DC Power Supply Output Stage | Industrial Solenoid Actuator |
Use Scenario: Pass transistor in linear-regulated 5V/2A output stage of bench power supply with thermal foldback protection. IC Role / Device Role / Timing Role: Linear-mode current amplifier; dissipates up to 1.5W continuously with external heatsink. Use Value: 1.5W PC rating and TO-126ML thermal path enable stable regulation without derating below 75°C ambient. | Use Scenario: 48V/1.8A solenoid valve driver in factory automation panel with 100 ms ON pulses. IC Role / Device Role / Timing Role: High-pulse-current switch handling 5A surge during solenoid pull-in; operates in active region during hold phase. Use Value: RSTU-grade hFE (140–400) ensures consistent base drive sizing across production, eliminating field calibration. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar NPN high-speed switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| 2SD1733 | VCEO = 60V, IC = 3A, PC = 2W, hFE = 100–320 (no RSTU binning) | Higher voltage/current headroom but wider hFE spread increases base resistor tolerance sensitivity. | Select 2SD1733 only when >50V bus voltage or >2.5A steady-state current is required; verify thermal design for 2W dissipation. |
| MJD127G | VCEO = 100V, IC = 2A, PC = 1.5W, TO-220 package, hFE = 100–300 | Same power rating but larger TO-220 footprint and higher VCE(sat) (−1.5V min), increasing conduction loss. | Choose MJD127G only if board layout allows TO-220 and system voltage exceeds 60V; not recommended for low-loss 24V relay drivers. |
Compared with 2SD1682T, 2SD1733 offers higher voltage/current margins but looser hFE control, while MJD127G trades package compatibility and saturation efficiency for elevated voltage capability-neither is pin-compatible, requiring PCB redesign.
Availability
2SD1682T is available at Aetrix Electronics and suitable for relay drivers, lamp drivers, and DC power supplies requiring stable component supply, consistent hFE binning, and proven TO-126ML thermal reliability in industrial ambient.
Supply support for 2SD1682T includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
SANYO Electric Co., Ltd. was a Japanese semiconductor manufacturer specializing in power transistors, analog ICs, and optoelectronics before its acquisition by Panasonic in 2012; known for high-reliability discrete devices.
The 2SD1682T belongs to SANYO's high-speed switching transistor family designed specifically for industrial control interfaces where low saturation loss, tight gain consistency, and robust ASO are mandatory.
FAQ
What is the maximum continuous collector current rating for the 2SD1682T?
The 2SD1682T has a maximum continuous collector current (IC) rating of 2.5 A at case temperature Tc = 25°C. This rating assumes proper heatsinking; derating is required above 25°C case temperature per the PC–Ta curve in the datasheet. At ambient temperature (Ta), sustained operation above ~1.2A typically requires a heatsink to maintain safe junction temperature.
Does the 2SD1682T have a defined hFE binning specification?
Yes, the 2SD1682T is binned into the RSTU grade with hFE = 140–400 at IC = −100 mA and VCE = −2 V. This tight gain range ensures predictable base drive requirements across production lots and simplifies design of fixed-resistor bias networks in relay and lamp driver circuits.
What package type does the 2SD1682T use, and how is the collector terminal connected?
The 2SD1682T uses the SANYO TO-126ML package, a 3-pin through-hole molded plastic case with an integral metal tab. Pin 2 (Collector) is electrically connected to the metal tab, which serves as the primary thermal path. When mounting to a heatsink, electrical isolation (e.g., mica washer + thermal grease) is required if the heatsink is grounded.
Can the 2SD1682T be used in linear regulator applications?
Yes, the 2SD1682T can operate in linear mode for low-noise, low-EMI regulation, provided power dissipation remains within its 1.5W limit at Tc = 25°C and junction temperature stays below 150°C. Its low VCE(sat) and stable hFE support precise current amplification, but thermal design must account for worst-case VIN–VOUT × ILOAD dissipation.
What are the absolute maximum ratings for base-emitter reverse voltage on the 2SD1682T?
The absolute maximum VBO (base-emitter reverse voltage) for the 2SD1682T is −6 V at Ta = 25°C. Exceeding this value-even momentarily-risks permanent degradation of the base-emitter junction. In microcontroller-driven applications, a clamping diode or series resistor limiting base current is recommended when driving inductive loads with flyback risk.
2SD1682T Specifications
- Product attributes
- Attribute value
- Manufacturer:
- onsemi
- Series:
- -
- Package/Case:
- TO-225AA, TO-126-3
- Packaging:
- Bulk
- Product Status:
- Active
- Transistor Type:
- NPN
- Current - Collector (Ic) (Max):
- 2.5 A
- Voltage - Collector Emitter Breakdown (Max):
- 50 V
- Vce Saturation (Max) @ Ib, Ic:
- 300mV @ 50mA, 1A
- Current - Collector Cutoff (Max):
- 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce:
- 200 @ 100mA, 2V
- Power - Max:
- 1.5 W
- Frequency - Transition:
- 140MHz
- Operating Temperature:
- 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-126ML
2SD1682T FAQ
1.How can I place an order for 2SD1682T through Aetrix?
Please submit a Request for Quotation (RFQ) for 2SD1682T on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 2SD1682T reliable?
The price and inventory of 2SD1682T are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 2SD1682T is usually 5 days.
3.What payment methods are accepted for 2SD1682T?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 2SD1682T transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 2SD1682T?
2SD1682T orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 2SD1682T order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 2SD1682T?
For technical support, including 2SD1682T datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 2SD1682T requirements.
6.How does Aetrix verify that 2SD1682T is sourced from the original manufacturer or authorized distributors?
All 2SD1682T products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 2SD1682T meets industry standards.
7.What is the process for return or replacement of 2SD1682T?
All 2SD1682T units undergo pre-shipment inspection (PSI). If there is an issue with 2SD1682T, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 2SD1682T part is unused and in its original packaging.
Return procedure for 2SD1682T:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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