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onsemi 2SD1723T

Part No.:
2SD1723T
Manufacturer:
onsemi
Category:
Single Bipolar Transistors
Package:
TO-225AA, TO-126-3
Datasheet:
Aetrix2SD1723T.pdf
Description:
TRANS NPN 50V 8A TO-126LP
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:5,100

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Product details

Overview

2SD1723T from SANYO is an NPN epitaxial planar silicon transistor designed for high-speed switching applications, with VCEO = 50 V, IC = –8 A (continuous), PC = 1.2 W at Tc = 25 °C, and fT = 180 MHz - used in relay drivers, inverters, and DC-DC converters.

For engineers reviewing the 2SD1723T datasheet, pinout, applications, or equivalent options, key selection criteria include saturation voltage (VCE(sat) ≤ 400 mV at IC = –4 A, IB = –200 mA), DC current gain linearity (hFE = 70–400 at IC = –0.5 A), and thermal derating behavior up to Tj = 150 °C.

Technical Context

This NPN bipolar junction transistor operates in common-emitter configuration with a TO-126LP package and internal epitaxial planar structure optimized for fast switching. Its low VCE(sat) and high fT support efficient power control in pulse-driven loads.

Electrical characteristics are specified across Ta = –25 °C to +75 °C, with guaranteed hFE bins (e.g., 70–140, 140–280) and validated switching times: ton = 50 ns, toff = 500 ns, tf = 20 ns under defined test conditions (VCC = 25 V, RL = 50 Ω).

Key Specifications

ParameterValue and Actual Design Meaning
VCEO50 V - maximum collector-to-emitter voltage before breakdown under open-base condition; defines safe operating voltage headroom in switching circuits.
IC (cont.)–8 A - continuous collector current rating at Tc = 25 °C; determines load-driving capability in relay or motor driver stages.
VCE(sat)≤ 400 mV at IC = –4 A, IB = –200 mA - low saturation voltage minimizes conduction loss and heat generation during on-state operation.
fT180 MHz - transition frequency confirms suitability for high-speed switching up to ~10–20 MHz practical operation with margin.
hFE70–400 (binned) at VCE = –2 V, IC = –0.5 A - wide but controlled DC current gain enables predictable base drive design across production lots.
PC1.2 W at Tc = 25 °C - thermal power dissipation limit requiring heatsinking or derating above ambient temperatures.
toff500 ns - turn-off delay supports PWM frequencies up to ~500 kHz with minimal dead-time overhead in half-bridge topologies.

Pinout & Package

SANYO TO-126LP plastic package (15.5 mm × 8.0 mm × 2.0 mm), surface-mount compatible with through-hole mounting, featuring integral heat slug for thermal transfer to PCB copper or heatsink.

Pin/TerminalCircuit RoleDesign Meaning
1 (Emitter)Current sink terminalConnected to ground or low-side return path; carries full load current and must be routed with low-inductance, high-current trace.
2 (Collector)Current source terminalConnected to switched load (e.g., relay coil, transformer primary); requires voltage standoff ≥ 50 V and transient suppression.
3 (Base)Control inputReceives current-limited drive signal (IB ≈ IC/hFE); sensitive to ESD and requires series resistor to prevent overdrive.

Key Features

FeatureDesign Value
Low VCE(sat)Enables <1 W conduction loss at 4 A, reducing heatsink requirements in space-constrained relay driver PCBs.
High fTSupports clean square-wave switching up to 10 MHz, minimizing rise/fall time distortion in inverter gate-drive buffers.
Linear hFEProvides stable current amplification across IC range (0.01–8 A), simplifying analog feedback or linear regulator designs.
Fast switchingSub-100 ns ton and tf reduce switching losses in high-frequency DC-DC converters operating >200 kHz.

Applications

Relay DriversHigh-Speed Inverters

Use Scenario: Driving 12 V/24 V electromagnetic relays in industrial PLC output modules.

IC Role / Device Role / Timing Role: NPN switch controlling relay coil current with fast turn-on/turn-off to eliminate contact chatter.

Use Value: VCE(sat) ≤ 400 mV ensures <0.5 W dissipation at 4 A coil current, enabling compact layout without forced air cooling.

Use Scenario: Push-pull stage in 100–500 kHz isolated DC-DC converter for telecom power supplies.

IC Role / Device Role / Timing Role: High-speed switching element in totem-pole output driving transformer primary.

Use Value: fT = 180 MHz and tf = 20 ns minimize overlap loss and EMI generation during switching transitions.

DC-DC ConvertersMotor Control Stages

Use Scenario: Low-side switch in synchronous buck converter for FPGA core voltage regulation.

IC Role / Device Role / Timing Role: Fast-switching NPN in non-synchronous rectifier configuration.

Use Value: toff = 500 ns allows reliable PWM operation up to 500 kHz while maintaining duty-cycle fidelity.

Use Scenario: H-bridge low-side driver for brushed DC motors in automotive seat adjusters.

IC Role / Device Role / Timing Role: Load-switching transistor handling bidirectional stall currents up to 8 A.

Use Value: IC = –8 A rating and Tj = 150 °C max enable robust operation under intermittent overload without thermal shutdown.

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN switching transistor applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
2SC4027VCEO = 60 V, IC = –10 A, fT = 120 MHz, TO-220 packageHigher voltage/current rating but lower fT; better for 48 V systems with slower switching needsChoose when higher VCEO margin or higher IC is required, accepting larger footprint and reduced speed.
MJD122VCEO = 100 V, IC = –8 A, fT = 3 MHz, TO-252 packageLower fT, higher VCEO, surface-mount only; suited for low-frequency, high-voltage industrial controlsSelect for cost-sensitive, low-speed applications where TO-126LP footprint is not mandatory and 100 V isolation is critical.

Compared with 2SD1723T, 2SC4027 offers higher voltage/current headroom but trades off bandwidth, while MJD122 sacrifices speed for voltage robustness and SMT compatibility - neither is pin-compatible, requiring PCB redesign.

Availability

2SD1723T is available at Aetrix Electronics and suitable for relay drivers, high-speed inverters, and DC-DC converters requiring stable component supply, long-term obsolescence management, and traceable sourcing for industrial control and power electronics programs.

Supply support for 2SD1723T includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

SANYO Electric Co., Ltd. was a Japanese semiconductor manufacturer specializing in power discrete devices, analog ICs, and optoelectronics before its acquisition by Panasonic in 2012.

The 2SD1723T belongs to SANYO's high-speed switching transistor product line, engineered for reliability in industrial power control applications including motor drives, power supplies, and automation equipment.

FAQ

What is the maximum junction temperature rating for the 2SD1723T?

The 2SD1723T has a maximum junction temperature (Tj) of 150 °C, as specified in its Absolute Maximum Ratings table. This rating applies under steady-state thermal conditions with proper heatsinking. Operation beyond this limit risks permanent degradation of hFE and increased leakage current. Derating curves in the datasheet show allowable power dissipation versus ambient temperature, and the 2SD1723T must be mounted with adequate thermal interface to maintain Tj ≤ 150 °C in actual application.

Is the 2SD1723T suitable for linear amplifier applications?

The 2SD1723T exhibits excellent hFE linearity across IC = 0.01–8 A and stable VBE characteristics, making it usable in Class-A or AB linear amplifier stages where moderate bandwidth and low distortion are required. However, its fT = 180 MHz and lack of specified linearity metrics (e.g., THD, intermodulation) mean it is primarily characterized and qualified for switching use. For precision analog amplification, dedicated audio or RF transistors with tighter parameter distributions are recommended over the 2SD1723T.

What is the typical VBE(sat) of the 2SD1723T at IC = –4 A?

The typical VBE(sat) of the 2SD1723T is –1.0 V at IC = –4 A and IB = –200 mA (IC/IB = 20), per the "VBE(sat) vs. IC" graph (ITR09109) in the datasheet. This value reflects the forward-biased base-emitter junction voltage under hard saturation conditions. Designers must ensure base drive circuitry can deliver sufficient current to achieve this condition, especially at elevated temperatures where VBE(sat) decreases slightly.

Does the 2SD1723T have built-in protection features such as ESD or overtemperature shutdown?

No, the 2SD1723T is a bare-die bipolar transistor without integrated protection circuitry. It lacks ESD protection diodes, thermal shutdown, or current limiting. External protection - including base-emitter resistors, flyback diodes across inductive loads, and heatsinking - is mandatory for reliable operation. The datasheet explicitly warns against exceeding absolute maximum ratings even momentarily, and SANYO disclaims liability for failures resulting from overstress conditions. System-level safeguards must be implemented independently of the 2SD1723T.

How does the 2SD1723T compare to the complementary PNP device 2SB1166?

The 2SD1723T (NPN) and 2SB1166 (PNP) share identical package (TO-126LP), thermal specs (Tj = 150 °C), and many electrical parameters (e.g., |VCEO| = 50 V, |IC| = 8 A), enabling matched pair usage in push-pull or complementary symmetry circuits. Key differences include polarity-reversed voltage/current signs, slightly different hFE bins, and minor variations in fT (2SB1166: 130 MHz). Their co-designation in the same datasheet (No.2021) confirms intentional pairing for balanced switching applications.

2SD1723T Specifications

Product attributes
Attribute value
Manufacturer:
onsemi
Series:
-
Package/Case:
TO-225AA, TO-126-3
Packaging:
Bulk
Product Status:
Active
Transistor Type:
NPN
Current - Collector (Ic) (Max):
8 A
Voltage - Collector Emitter Breakdown (Max):
50 V
Vce Saturation (Max) @ Ib, Ic:
400mV @ 200mA, 4A
Current - Collector Cutoff (Max):
1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:
200 @ 500mA, 2V
Power - Max:
1.2 W
Frequency - Transition:
180MHz
Operating Temperature:
150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
TO-126LP

2SD1723T FAQ

1.How can I place an order for 2SD1723T through Aetrix?

Please submit a Request for Quotation (RFQ) for 2SD1723T on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 2SD1723T reliable?

The price and inventory of 2SD1723T are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 2SD1723T is usually 5 days.

3.What payment methods are accepted for 2SD1723T?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 2SD1723T transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for 2SD1723T?

2SD1723T orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 2SD1723T order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 2SD1723T?

For technical support, including 2SD1723T datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 2SD1723T requirements.

6.How does Aetrix verify that 2SD1723T is sourced from the original manufacturer or authorized distributors?

All 2SD1723T products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 2SD1723T meets industry standards.

7.What is the process for return or replacement of 2SD1723T?

All 2SD1723T units undergo pre-shipment inspection (PSI). If there is an issue with 2SD1723T, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 2SD1723T part is unused and in its original packaging.

Return procedure for 2SD1723T:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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