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Home > Products > Discrete Semiconductor Products > Transistors > Bipolar (BJT) > Single Bipolar Transistors

onsemi 2SD1724T

Name: 2SD1724T
Brand: onsemi
SKU: 2SD1724T
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: 2SD1724T

Manufacturer:: onsemi

Category:: Single Bipolar Transistors

Package:: TO-225AA, TO-126-3

Datasheet:: 2SD1724T.pdf

Description:: TRANS NPN 100V 3A TO-126LP

Quantity:: RFQ Add To RFQ list

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Product details

Overview

2SD1724T from SANYO is an NPN epitaxial planar silicon transistor rated for 100 V V_CEO, 3 A I_C, and 1.2 W P_C at T_c = 25 °C, optimized for high-speed switching in relay drivers and DC-DC converters. It delivers low V_CE(sat) of –200 mV at I_C = –1.5 A / I_B = –0.15 A and f_T = 130 MHz, supporting robust performance in industrial power control circuits.

For engineers reviewing the 2SD1724T datasheet, pinout, applications, or equivalent options, key selection criteria include verified V_CE(sat) at 1.5 A, h_FE classification (40–100 at I_C = –0.5 A), thermal derating above 25 °C, and TO-126LP package compatibility with through-hole PCB layouts.

Technical Context

This NPN bipolar junction transistor uses epitaxial planar construction to achieve fast switching (t_on = 100 ns, t_f = 50 ns) and stable DC current gain linearity across I_C = –0.1 mA to –3 A. Its design targets discrete switching stages where low saturation voltage and high f_T reduce conduction loss and enable >100 kHz operation.

The device operates with V_BE(sat) = –1.2 V at I_C = –1.5 A / I_B = –0.15 A and exhibits Cob = 52 pF at V_CB = –10 V, f = 1 MHz - parameters critical for minimizing switching energy and EMI in flyback and push-pull topologies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CEO	100 V - maximum collector-emitter voltage before breakdown under open-base conditions; sets upper limit for supply rail in switching regulators.
I_C (DC)	–3 A - continuous collector current rating; defines steady-state load-handling capability in relay coil or motor driver stages.
P_C @ T_c=25°C	1.2 W - thermal power dissipation limit at case temperature 25 °C; requires heatsinking above ambient for sustained 3 A operation.
V_CE(sat)	–200 mV @ I_C=–1.5 A, I_B=–0.15 A - low saturation voltage reduces conduction loss and self-heating in saturated-switch applications.
f_T	130 MHz - transition frequency confirming suitability for high-speed switching up to ~10–20 MHz practical edge rates.
h_FE	40–100 @ V_CE=–5 V, I_C=–0.5 A - DC current gain range used to size base drive resistors for reliable saturation.
C_ob	52 pF @ V_CB=–10 V, f=1 MHz - output capacitance affecting turn-off speed and snubber design in inductive switching.

Pinout & Package

SANYO TO-126LP package: molded plastic case with 3 leads, 2.0 mm lead pitch, 15.5 mm body length, and integral heat-dissipating tab (lead 2). Mounting requires mechanical fixation and thermal interface to heatsink.

Pin/Terminal	Circuit Role	Design Meaning
1 (Emitter)	Current exit path for NPN transistor	Connected to ground or low-side return; polarity must match NPN biasing - reverse connection causes failure.
2 (Collector)	Current entry path and thermal interface	Electrically connected to tab; must be isolated from chassis unless circuit ground is tied to heatsink; primary heat conduction path.
3 (Base)	Control terminal for minority-carrier injection	Requires current-limited drive (typically via series resistor); sensitive to ESD; not internally protected.

Key Features

Feature	Design Value
Low V_CE(sat)	–200 mV at I_C = –1.5 A enables <1.5 W conduction loss in 3 A switching loads, reducing thermal stress on PCB traces.
High f_T	130 MHz supports clean square-wave edges in 10–50 kHz SMPS gate drivers and pulse generators without excessive ringing.
Linear h_FE	Stable gain across I_C = 0.1–3 A simplifies base drive design and improves current regulation accuracy in analog-controlled switches.
Fast switching	t_on = 100 ns, t_f = 50 ns minimize dead-time losses and cross-conduction risk in complementary pair configurations.

Applications

Industrial Relay Drivers	DC-DC Converter Switches
Use Scenario: Driving 24 V/1 A electromagnetic relays in PLC I/O modules with microcontroller GPIO outputs. IC Role / Device Role / Timing Role: NPN switch amplifying logic-level signals to full coil current; operates in saturation with fixed 10 µs turn-on/turn-off timing. Use Value: V_CE(sat) ≤ –200 mV ensures <0.3 W relay coil loss and eliminates need for active base pull-down during deactivation.	Use Scenario: Low-side switch in 48 V input, 12 V output buck converter operating at 50 kHz with 3 A output current. IC Role / Device Role / Timing Role: Main power switch controlling inductor current; driven by PWM controller with 100 ns minimum on-time capability. Use Value: f_T = 130 MHz and t_f = 50 ns support efficient switching at 50 kHz with <2% duty-cycle limitation and minimal switching loss.
Motor Control H-Bridge Legs	High-Speed Inverters
Use Scenario: Low-side transistor in half-bridge driving 24 V brushed DC motors in automated gate systems. IC Role / Device Role / Timing Role: Fast-turning NPN switch synchronized with high-side PNP (2SB1167) to prevent shoot-through; operates with 200 ns dead time. Use Value: Matched t_on/t_f between 2SD1724T and 2SB1167 enables precise timing control and reduces cross-conduction risk in bidirectional motor drives.	Use Scenario: Push-pull stage in ultrasonic cleaning generator producing 40 kHz square wave into piezoelectric transducer load. IC Role / Device Role / Timing Role: One leg of complementary pair delivering 2 A peak current pulses; biased in Class B with zero quiescent current. Use Value: Linear h_FE and low V_CE(sat) maintain waveform fidelity and minimize harmonic distortion below –40 dBc at 40 kHz.

Industrial Relay Drivers

DC-DC Converter Switches

Use Scenario: Driving 24 V/1 A electromagnetic relays in PLC I/O modules with microcontroller GPIO outputs.

IC Role / Device Role / Timing Role: NPN switch amplifying logic-level signals to full coil current; operates in saturation with fixed 10 µs turn-on/turn-off timing.

Use Value: V_CE(sat) ≤ –200 mV ensures <0.3 W relay coil loss and eliminates need for active base pull-down during deactivation.

Use Scenario: Low-side switch in 48 V input, 12 V output buck converter operating at 50 kHz with 3 A output current.

IC Role / Device Role / Timing Role: Main power switch controlling inductor current; driven by PWM controller with 100 ns minimum on-time capability.

Use Value: f_T = 130 MHz and t_f = 50 ns support efficient switching at 50 kHz with <2% duty-cycle limitation and minimal switching loss.

Motor Control H-Bridge Legs

High-Speed Inverters

Use Scenario: Low-side transistor in half-bridge driving 24 V brushed DC motors in automated gate systems.

IC Role / Device Role / Timing Role: Fast-turning NPN switch synchronized with high-side PNP (2SB1167) to prevent shoot-through; operates with 200 ns dead time.

Use Value: Matched t_on/t_f between 2SD1724T and 2SB1167 enables precise timing control and reduces cross-conduction risk in bidirectional motor drives.

Use Scenario: Push-pull stage in ultrasonic cleaning generator producing 40 kHz square wave into piezoelectric transducer load.

IC Role / Device Role / Timing Role: One leg of complementary pair delivering 2 A peak current pulses; biased in Class B with zero quiescent current.

Use Value: Linear h_FE and low V_CE(sat) maintain waveform fidelity and minimize harmonic distortion below –40 dBc at 40 kHz.

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN switching transistor applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
2SC4110	V_CEO = 120 V, I_C = 3 A, f_T = 100 MHz, TO-126 package	Higher voltage margin but lower f_T; less suitable for >30 kHz switching	Select when extended breakdown margin is required over speed, e.g., 100 V bus applications with transient spikes.
MJD122G	V_CEO = 100 V, I_C = 3 A, f_T = 3 MHz, TO-220 package	Same voltage/current ratings but much lower f_T; slower switching increases loss in high-frequency designs	Prefer for linear-regulator pass devices or low-frequency (<5 kHz) switching where thermal mass outweighs speed needs.

Compared with 2SD1724T, 2SC4110 offers higher V_CEO headroom but reduced bandwidth, while MJD122G provides identical voltage/current specs in a larger TO-220 package with significantly lower f_T - making 2SD1724T optimal for compact, high-frequency switching where TO-126LP footprint and 130 MHz f_T are decisive.

Availability

2SD1724T is available at Aetrix Electronics and suitable for industrial relay drivers, DC-DC converter switches, motor control H-bridge legs, and high-speed inverters requiring stable component supply and long-term obsolescence management.

Supply support for 2SD1724T includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

SANYO Electric Co., Ltd. was a Japanese semiconductor manufacturer specializing in power discrete devices, analog ICs, and optoelectronics before its acquisition by Panasonic in 2012.

The 2SD1724T belongs to SANYO's legacy high-speed switching transistor product line, designed specifically for industrial power control applications demanding low saturation voltage, fast switching, and reliable TO-126LP thermal performance.

FAQ

What is the absolute maximum collector-emitter voltage rating for the 2SD1724T?

The 2SD1724T has an absolute maximum V_CEO rating of 100 V at T_a = 25 °C. This rating applies under open-base conditions and must not be exceeded even momentarily. Derating is required above 25 °C ambient, and operation near this limit demands verification of worst-case transients and layout-induced voltage spikes in the target application.

Does the 2SD1724T have built-in base-emitter protection diodes or ESD structures?

No, the 2SD1724T is a bare-die bipolar transistor without integrated protection diodes or ESD clamps. External base-emitter zener clamping (e.g., 6.2 V) and series current-limiting resistors are required in all designs to prevent damage from overvoltage or static discharge - especially when driven directly from microcontrollers or logic gates.

What is the typical DC current gain (h_FE) range for the 2SD1724T at I_C = –0.5 A?

The 2SD1724T is classified with h_FE = 40–100 at V_CE = –5 V and I_C = –0.5 A. This range is confirmed in the official SANYO specification sheet (No. 2047–2/4) and is used to calculate base drive requirements - for example, a minimum I_B of –5 mA is needed to saturate at I_C = –1.5 A assuming h_FE = 300 at forced beta = 10.

Can the 2SD1724T be used in parallel for higher current handling?

Parallel operation of 2SD1724T devices is not recommended due to mismatched h_FE and thermal runaway risk. The device lacks emitter ballasting resistors, and its positive temperature coefficient of V_CE(sat) is insufficient to ensure current sharing. For >3 A applications, use a single higher-rated device or implement active current balancing with external sensing and feedback.

What thermal derating applies to the 2SD1724T's power dissipation above 25 °C ambient?

The 2SD1724T's P_C derates linearly from 1.2 W at T_c = 25 °C to 0 W at T_j = 150 °C. With R_θJA ≈ 125 °C/W (no heatsink), usable power drops to ~0.6 W at 75 °C ambient. For reliable 3 A operation, a heatsink maintaining T_c ≤ 25 °C is mandatory - verified via thermal simulation or thermocouple measurement on prototype PCBs.

2SD1724T Specifications

Product attributes: Attribute value

Manufacturer:: onsemi

Series:: -

Package/Case:: TO-225AA, TO-126-3

Packaging:: Bulk

Product Status:: Active

Transistor Type:: NPN

Current - Collector (Ic) (Max):: 3 A

Voltage - Collector Emitter Breakdown (Max):: 100 V

Vce Saturation (Max) @ Ib, Ic:: 400mV @ 150mA, 1.5A

Current - Collector Cutoff (Max):: 1µA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce:: 200 @ 500mA, 5V

Power - Max:: 1.2 W

Frequency - Transition:: 180MHz

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-126LP

2SD1724T FAQ

1.How can I place an order for 2SD1724T through Aetrix?

Please submit a Request for Quotation (RFQ) for 2SD1724T on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 2SD1724T reliable?

The price and inventory of 2SD1724T are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 2SD1724T is usually 5 days.

3.What payment methods are accepted for 2SD1724T?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 2SD1724T transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for 2SD1724T?

2SD1724T orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 2SD1724T order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 2SD1724T?

For technical support, including 2SD1724T datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 2SD1724T requirements.

6.How does Aetrix verify that 2SD1724T is sourced from the original manufacturer or authorized distributors?

All 2SD1724T products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 2SD1724T meets industry standards.

7.What is the process for return or replacement of 2SD1724T?

All 2SD1724T units undergo pre-shipment inspection (PSI). If there is an issue with 2SD1724T, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 2SD1724T part is unused and in its original packaging.

Return procedure for 2SD1724T:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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