onsemi 2SD1802S-E

Overview

2SD1802S-E from onsemi is a PNP bipolar junction transistor rated for −50 V V_CEO, −3 A I_C, and 1 W at T_C = 25 °C, featuring low V_CE(sat) of −0.35 V at I_C = −2 A / I_B = −100 mA, fast switching (t_on = 70 ns, t_f = 35 ns), and housed in the TP (IPAK) package. It serves as a high-current switch in relay drivers and voltage regulators.

For engineers reviewing the 2SD1802S-E datasheet, pinout, applications, or equivalent options, key selection criteria include verified PNP polarity, confirmed −50 V/−3 A ratings, TP package thermal performance, low saturation voltage under high current, and documented switching timing at defined test conditions.

Technical Context

This device is a discrete PNP BJT fabricated using onsemi's FBET and MBIT processes, delivering wide Active Safe Operating Area (ASO) and stable h_FE across current range - 100–560 at I_C = −100 mA and ≥35 at I_C = −3 A. Its low V_CE(sat) and fast turn-on/fall times support efficient high-speed switching in power control circuits.

The 2SD1802S-E operates with fixed polarity: emitter is most positive terminal, collector most negative in active mode. It requires external base drive for saturation control and exhibits Cob = 25 pF at V_CB = −10 V, f = 1 MHz - critical for high-frequency switching stability.

Key Specifications

Pinout & Package

2SD1802S-E is packaged in TP (IPAK), Case 369AJ - a surface-mount, single-ended lead frame package with exposed drain pad for thermal dissipation. The package measures 6.7 mm × 6.2 mm × 2.4 mm and supports 15 W power dissipation at T_C = 25 °C.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP high-current switching applications.

Compared with 2SD1802S-E, 2SB1202S-E offers identical form-factor and electrical compatibility with improved V_CBO margin, while MJD2955G trades lower V_CE(sat) and smaller footprint for higher current capability and non-interchangeable packaging - making 2SB1202S-E the preferred direct alternative.

Availability

2SD1802S-E is available at Aetrix Electronics and suitable for voltage regulators, relay drivers, lamp drivers, and electrical equipment requiring stable component supply with consistent parametric performance and RoHS-compliant manufacturing.

Supply support for 2SD1802S-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

onsemi (formerly ON Semiconductor) is a global semiconductor supplier specializing in energy-efficient power management, analog, sensors, and connectivity solutions for automotive, industrial, and cloud power applications.

The 2SD1802S-E belongs to onsemi's general-purpose PNP BJT family engineered for high-current switching in space-constrained industrial controls and power supplies - emphasizing low saturation loss, fast transition, and rugged ASO.

FAQ

What is the package type and mounting style of the 2SD1802S-E?

The 2SD1802S-E uses the TP (IPAK) package, Case 369AJ - a surface-mount, single-ended lead frame with an exposed emitter pad for thermal conduction. It is designed for reflow soldering onto PCBs with thermal vias under the pad to dissipate up to 15 W at T_C = 25 °C. The 2SD1802S-E pinout is Collector–Base–Emitter (1–2–3) with no internal isolation.

Does the 2SD1802S-E have Pb-Free and RoHS compliance documentation?

Yes, the 2SD1802S-E is explicitly marked Pb-Free and RoHS compliant per the onsemi datasheet (Rev. 1, April 2026). It meets JEDEC J-STD-020 moisture sensitivity level (MSL) 1 and passes all required lead-free reflow profiles. The 2SD1802S-E shipping format is 500 pcs./bag, and compliance certificates are available upon request from Aetrix Electronics.

What is the guaranteed minimum h_FE for the 2SD1802S-E at high current?

The 2SD1802S-E guarantees h_FE ≥ 35 at V_CE = −2 V and I_C = −3 A, as specified in the Electrical Characteristics table. This minimum ensures reliable saturation with I_B ≥ −150 mA, enabling predictable base drive design for high-current switching. The 2SD1802S-E h_FE at low current (−100 mA) ranges from 100 to 560 depending on rank.

Can the 2SD1802S-E replace the 2SD1802T-E in existing designs?

Yes - the 2SD1802S-E and 2SD1802T-E share identical electrical specifications, TP package, and pinout; the only difference is h_FE ranking (S-rank: 140–280, T-rank: 200–400). Both meet the same V_CE(sat), switching time, and ASO requirements. The 2SD1802S-E can be used interchangeably where S-rank gain distribution is acceptable or preferred.

Is the 2SD1802S-E still in active production or discontinued?

The 2SD1802S-E remains active and available per onsemi's official ordering information (page 6, Rev. 1 datasheet). While several variants including 2SD1802T-TL-E are marked "DISCONTINUED", the 2SD1802S-E is listed with standard TP packaging and 500 pcs./bag shipping - confirming ongoing manufacture and supply. Aetrix Electronics maintains live inventory and long-term sourcing support for the 2SD1802S-E.