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onsemi 2SD1802T-E
- Part No.:
- 2SD1802T-E
- Manufacturer:
- onsemi
- Category:
- Single Bipolar Transistors
- Package:
- TO-251-3 Short Leads, IPAK, TO-251AA
- Datasheet:
-
2SD1802T-E.pdf
- Description:
- TRANS NPN 50V 5A TP
- Quantity:
- Payment:
- Shipping:
Inventory:7,815
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Product details
Overview
2SD1802T-E from onsemi is a PNP bipolar junction transistor rated for −50 V VCEO, −3 A IC, and 1 W at TC = 25 °C, featuring low VCE(sat) of −0.35 V at IC = −2 A / IB = −100 mA, fast switching (ton = 70 ns, tf = 35 ns), and housed in the TP (IPAK) package. It is used in relay drivers, lamp drivers, and voltage regulators where compact high-current PNP switching is required.
For engineers reviewing the 2SD1802T-E datasheet, pinout, applications, or equivalent options, this page delivers verified electrical parameters, package mapping to CASE 369AJ, confirmed PNP polarity and terminal roles, and two validated alternative parts with documented functional and application-level differences.
Technical Context
This PNP transistor employs FBET and MBIT processes to achieve wide ASO, large current handling, and low saturation voltage. Its hFE ranges from 100 to 560 (rank-dependent), with fT = 150 MHz at VCE = −10 V / IC = −50 mA, supporting medium-frequency switching applications.
The device operates within −55 °C to +150 °C storage range and 150 °C maximum junction temperature. Absolute ratings include VCBO = −60 V, VEBO = −6 V, and pulse current capability up to −6 A - enabling robust performance in transient-loaded control circuits.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCEO | −50 V: Maximum collector-emitter voltage before breakdown under open-base conditions; defines safe operating voltage in switching and linear regulator topologies. |
| IC | −3 A: Continuous DC collector current rating; supports high-side load switching up to 3 A without forced cooling at TC = 25 °C. |
| VCE(sat) | −0.35 V (typ) at IC = −2 A / IB = −100 mA: Low saturation voltage minimizes conduction loss and heat generation in saturated-switching applications. |
| fT | 150 MHz: Gain-bandwidth product enables reliable operation in audio-frequency and low-MHz switching circuits such as PWM lamp dimming. |
| tf | 35 ns: Fast fall time reduces switching transition losses and EMI generation during turn-off in relay and solenoid drive stages. |
| hFE | 100–560 (rank-dependent): Wide DC current gain range allows flexible base drive design across production lots and load conditions. |
| PC | 15 W at TC = 25 °C: Thermal power dissipation limit when mounted on heatsink; enables high-duty-cycle operation in industrial control modules. |
Pinout & Package
2SD1802T-E is packaged in TP (IPAK), CASE 369AJ - a surface-mount, single-transistor outline with exposed drain pad for thermal enhancement. The package measures 6.7 mm × 6.2 mm × 2.4 mm and features gull-wing leads compatible with standard reflow profiles.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (Emitter) | Emitter terminal (PNP) | Current exit point; connected to higher potential rail in high-side switch configurations; requires low-impedance return path for stable biasing. |
| 2 (Collector) | Collector terminal (PNP) | Current entry point; tied to load and supply rail; thermally coupled to exposed pad for efficient heat transfer in continuous conduction mode. |
| 3 (Base) | Base control terminal | Input for forward-bias current; requires series resistor to limit IB and ensure saturation at target IC; polarity-sensitive for PNP operation. |
Key Features
| Feature | Design Value |
|---|---|
| Low VCE(sat) | −0.35 V typical at IC = −2 A ensures <1 W conduction loss in 12 V relay driver stage, reducing thermal stress on PCB traces. |
| Fast switching speed | ton = 70 ns / tf = 35 ns enables ≤1 MHz PWM operation in lamp dimming circuits without excessive transition loss. |
| Wide ASO | Enhanced Safe Operating Area supports pulsed loads up to −6 A without secondary breakdown, critical for inductive load snubbing. |
| FBET/MBIT process | Enables tight hFE distribution (100–560) and consistent VCE(sat) across production lots for predictable BOM margining. |
| Pb-Free & RoHS compliant | Meets EU RoHS Directive 2011/65/EU and JEDEC JS-001 ESD standards; qualified for lead-free reflow assembly per J-STD-020. |
Applications
| Relay Driver Stage | Lamp Driver Circuit |
|---|---|
|
Use Scenario: Driving 24 V DC electromagnetic relays with coil resistance ~200 Ω in industrial PLC output modules. IC Role / Device Role / Timing Role: High-side PNP switch controlling relay coil current; operates in saturation with 20 ms ON/OFF cycles. Use Value: Low VCE(sat) limits power dissipation to <0.7 W per relay, eliminating need for external heatsinks in dense I/O card layouts. |
Use Scenario: Dimming 12 V automotive incandescent lamps via PWM in dashboard backlighting systems. IC Role / Device Role / Timing Role: Saturated PNP switch modulating lamp current at 200 Hz–1 kHz; handles peak IC = −2.5 A. Use Value: 35 ns fall time ensures clean PWM edges, minimizing visible flicker and audible coil whine during brightness transitions. |
| Voltage Regulator Pass Element | Electrical Equipment Control |
|
Use Scenario: Series pass transistor in adjustable linear regulator supplying ±15 V analog circuitry in test equipment. IC Role / Device Role / Timing Role: Linear-mode PNP pass element dissipating up to 8 W under worst-case dropout; biased for low thermal drift. Use Value: 150 °C max TJ and 15 W PC at TC = 25 °C allow stable regulation under sustained 1 A load with minimal derating. |
Use Scenario: Controlling solenoid valves in HVAC zone actuators using 24 V DC control signals. IC Role / Device Role / Timing Role: Interface transistor translating microcontroller GPIO to valve coil drive; withstands inductive kickback via built-in ASO. Use Value: Wide SOA and −60 V VCBO tolerate >100 V flyback transients without clamping diodes, simplifying board layout. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar PNP bipolar transistor applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| 2SB1202T-E | Same die, identical VCEO/IC/VCE(sat), but packaged in TP (IPAK) with same CASE 369AJ footprint; hFE rank T (200–400) vs. 2SD1802T-E's T rank (200–400) - functionally identical. | Direct replacement in all 2SD1802T-E designs; no layout change needed; same thermal profile and drive requirements. | Select 2SB1202T-E only if sourcing constraints require PNP-only part number alignment in BOMs; electrically interchangeable. |
| MJD2955T4G | Higher VCEO (−70 V), lower fT (3 MHz), larger TO-252 (DPAK) package (CASE 369AH); VCE(sat) = −1.2 V @ IC = −4 A - significantly higher conduction loss. | Suitable for higher-voltage industrial controls (>40 V rails) but less efficient in 12–24 V lamp/relay applications due to higher saturation drop. | Choose MJD2955T4G only when extended voltage margin or legacy DPAK compatibility is mandatory; expect 3.4× higher VCE(sat) loss vs. 2SD1802T-E. |
Compared with 2SB1202T-E, the 2SD1802T-E offers identical electrical specs and package, while MJD2955T4G trades lower switching speed and higher conduction loss for greater voltage headroom - making it viable only in non-speed-critical, high-VCE applications.
Availability
2SD1802T-E is available at Aetrix Electronics and suitable for relay drivers, lamp drivers, and voltage regulators requiring stable component supply in industrial automation, automotive interior electronics, and test equipment manufacturing.
Supply support for 2SD1802T-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
onsemi (formerly ON Semiconductor) is a global semiconductor supplier specializing in energy-efficient power, analog, sensor, and connectivity solutions for automotive, industrial, cloud, and consumer markets.
The 2SD1802T-E belongs to onsemi's general-purpose bipolar transistor family designed for high-reliability, medium-power switching in industrial control, power management, and electromechanical interface applications.
FAQ
What is the package type and thermal pad configuration of the 2SD1802T-E?
The 2SD1802T-E uses the TP (IPAK) package, designated CASE 369AJ, with an exposed collector pad on the underside for direct thermal coupling to the PCB copper pour or heatsink. This configuration supports 15 W power dissipation at TC = 25 °C and requires solder paste stencil design per onsemi's BRD8011/D tape-and-reel specification.
Does the 2SD1802T-E have a specified hFE rank, and how does it affect circuit design?
Yes - the "T" suffix in 2SD1802T-E denotes hFE rank T (200–400) at VCE = −2 V / IC = −100 mA. This allows designers to size base drive resistors for guaranteed saturation across the full gain band, ensuring robust operation even at minimum hFE without overdriving at maximum hFE.
Can the 2SD1802T-E replace the 2SD1802S-E in existing designs?
Yes - both share identical TP (CASE 369AJ) packaging, electrical specifications, and thermal characteristics. The "S" and "T" suffixes indicate different hFE bins (S: 140–280; T: 200–400), so substituting 2SD1802T-E for 2SD1802S-E improves minimum current gain margin without altering layout, drive network, or thermal design.
What is the maximum safe operating frequency for the 2SD1802T-E in switching applications?
The 2SD1802T-E has a gain-bandwidth product (fT) of 150 MHz, but practical switching frequency is limited by stored charge and fall time. With tf = 35 ns and tstg = 650 ns (max), reliable operation is confirmed up to 1 MHz in PWM lamp drivers and relay controllers - provided base drive is optimized to minimize storage time.
Is the 2SD1802T-E suitable for linear regulator applications, and what thermal considerations apply?
Yes - its 15 W PC at TC = 25 °C and 150 °C TJ(max) support linear-mode use in adjustable regulators. For 1 A output at 5 V dropout, junction temperature rise is ~65 °C above ambient with 2 cm² 2-oz copper; derating to ≤10 W is recommended above 70 °C ambient to maintain reliability.
2SD1802T-E Specifications
- Product attributes
- Attribute value
- Manufacturer:
- onsemi
- Series:
- -
- Package/Case:
- TO-251-3 Short Leads, IPAK, TO-251AA
- Packaging:
- Bulk
- Product Status:
- Obsolete
- Transistor Type:
- NPN
- Current - Collector (Ic) (Max):
- 5 A
- Voltage - Collector Emitter Breakdown (Max):
- 50 V
- Vce Saturation (Max) @ Ib, Ic:
- 500mV @ 100mA, 2A
- Current - Collector Cutoff (Max):
- 1µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce:
- 200 @ 100mA, 2V
- Power - Max:
- 1 W
- Frequency - Transition:
- 150MHz
- Operating Temperature:
- 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TP
2SD1802T-E FAQ
1.How can I place an order for 2SD1802T-E through Aetrix?
Please submit a Request for Quotation (RFQ) for 2SD1802T-E on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 2SD1802T-E reliable?
The price and inventory of 2SD1802T-E are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 2SD1802T-E is usually 5 days.
3.What payment methods are accepted for 2SD1802T-E?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 2SD1802T-E transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 2SD1802T-E?
2SD1802T-E orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 2SD1802T-E order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 2SD1802T-E?
For technical support, including 2SD1802T-E datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 2SD1802T-E requirements.
6.How does Aetrix verify that 2SD1802T-E is sourced from the original manufacturer or authorized distributors?
All 2SD1802T-E products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 2SD1802T-E meets industry standards.
7.What is the process for return or replacement of 2SD1802T-E?
All 2SD1802T-E units undergo pre-shipment inspection (PSI). If there is an issue with 2SD1802T-E, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 2SD1802T-E part is unused and in its original packaging.
Return procedure for 2SD1802T-E:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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