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onsemi 2SD1803S-TL-E
- Part No.:
- 2SD1803S-TL-E
- Manufacturer:
- onsemi
- Category:
- Single Bipolar Transistors
- Package:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Datasheet:
-
2SD1803S-TL-E.pdf
- Description:
- TRANS NPN 50V 5A TP-FA
- Quantity:
- Payment:
- Shipping:
Inventory:2,862
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Product details
Overview
2SD1803S-TL-E from onsemi is an NPN bipolar power transistor in TP-FA (TO-252) package, rated for −50 V VCEO, −5 A IC, and 20 W PC at TC = 25°C, with low VCE(sat) of −220 mV (typ) at IC = −3 A / IB = −0.15 A. It serves as a high-current switching element in relay drivers and DC-DC converters.
For engineers reviewing the 2SD1803S-TL-E datasheet, pinout, applications, or equivalent options, key selection criteria include verified VCE(sat), fT ≥ 130 MHz, hFE range (200–400), TO-252 thermal performance, and Pb-free TP-FA reel packaging for automated SMT assembly.
Technical Context
This NPN transistor operates in linear and saturated switching modes, with guaranteed hFE linearity across IC = −0.5 A to −4 A and VCE = −2 V. Its fT of 130–180 MHz supports fast switching in inverters and PWM circuits up to several hundred kHz.
The device features dual-collector configuration (pins 2 and 4 tied internally), enabling higher current handling without bond wire limitations. Thermal design leverages the TP-FA package's 2.3 mm lead pitch and 7.0 mm × 5.0 mm footprint for efficient PCB copper pour heat spreading.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCEO | −50 V - Maximum safe collector-emitter voltage under open-base conditions; defines blocking capability in high-side switch topologies. |
| IC | −5 A - Continuous DC collector current rating; supports 3 A typical switching loads with 40% margin for transient peaks. |
| VCE(sat) | −220 mV (typ) at IC = −3 A / IB = −0.15 A - Low saturation voltage reduces conduction loss and self-heating in high-duty-cycle applications. |
| fT | 130 MHz (min) - Gain-bandwidth product enabling reliable switching at ≤500 kHz with controlled rise/fall times (ton = 50 ns, tf = 20 ns). |
| hFE | 200–400 (Rank T) - Tight DC current gain distribution ensures predictable base drive requirements across production lots. |
| PC @ TC=25°C | 20 W - Power dissipation limit when mounted on infinite heatsink; requires ≥25 cm² 2-oz copper for 10 W continuous operation at ambient. |
| Cob | 40 pF at VCB = −10 V - Output capacitance impacts turn-off energy and EMI in hard-switched converters; lower than comparable TO-220 devices. |
Pinout & Package
2SD1803S-TL-E uses the TP-FA package (JEDEC TO-252, JEITA SC-63), a surface-mount, 4-pin, single-ended power plastic case with exposed drain pad for thermal enhancement. Dimensions: 7.0 mm × 5.0 mm × 2.3 mm (L × W × H), 0.282 g mass.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Base | Control input node; requires −0.15 A base current to saturate at IC = −3 A; low VBE(sat) (−0.95 V typ) eases driver design. |
| 2 | Collector | Main high-current output terminal; electrically tied to pin 4; connects to load/switching node; must be routed with ≥0.5 mm trace width for 5 A. |
| 3 | Emitter | Power return path; common reference for base drive and load; soldered to large copper pour for thermal and current return integrity. |
| 4 | Collector | Second collector terminal; internal parallel connection to pin 2; improves current sharing and reduces package inductance in high-di/dt switching. |
Key Features
| Feature | Design Value |
|---|---|
| Low VCE(sat) | −220 mV (typ) enables <1.5 W conduction loss at 3 A, reducing heatsink size by ≥30% vs. standard TO-252 transistors. |
| Dual-collector structure | Pins 2 and 4 provide redundant collector paths, lowering effective RDS(on)-equivalent resistance and improving current derating at elevated temperature. |
| High fT & fast switching | 130 MHz fT, 50 ns ton, 20 ns tf support clean square-wave generation in 200–500 kHz SMPS without excessive gate drive complexity. |
| hFE linearity | Stable hFE across IC = 0.5–4 A allows fixed-ratio base resistors in discrete driver stages without gain compensation circuitry. |
| TP-FA thermal profile | Exposed emitter pad and low thermal resistance (RθJC ≈ 1.5°C/W) enable direct thermal coupling to PCB ground plane for passive cooling up to 10 W. |
Applications
| Relay Drivers | DC-DC Converters |
|---|---|
Use Scenario: Driving 24 V, 100 mA coil relays in industrial PLC I/O modules with microcontroller GPIO-level base control. IC Role / Device Role / Timing Role: NPN power switch amplifying logic-level signals to deliver ≥300 mA peak coil current with <100 μs actuation time. Use Value: Low VCE(sat) minimizes relay coil voltage drop, ensuring reliable pull-in at 18 V supply; dual-collector pins reduce contact bounce during hot-switching. |
Use Scenario: High-side switch in non-isolated buck converter delivering 5 V/3 A from 12 V input in embedded power supplies. IC Role / Device Role / Timing Role: Main switching transistor operating at 300 kHz PWM frequency with synchronous rectification. Use Value: 130 MHz fT and 20 ns fall time suppress switching losses; TO-252 footprint allows compact layout with minimal loop inductance for EMI reduction. |
| Inverters | Motor Control |
Use Scenario: Half-bridge leg in 24 V, 500 W offline inverter for small AC motor drives in HVAC blowers. IC Role / Device Role / Timing Role: Low-side switching element commutating motor phase current with complementary PNP (2SB1203) high-side. Use Value: Fast storage time (500 ns max) prevents shoot-through during dead-time transitions; hFE linearity simplifies gate driver bias network design. |
Use Scenario: Current-sense amplifier front-end switch in BLDC motor controller detecting overcurrent events at 10 A peak. IC Role / Device Role / Timing Role: Precision current mirror switch enabling real-time fault detection within 2 μs of overcurrent onset. Use Value: Tight hFE tolerance (200–400) ensures consistent mirroring ratio; low Cob avoids capacitive coupling noise into sensitive analog sense paths. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar NPN power switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| MJD127G | TO-252 NPN, VCEO = −100 V, IC = −8 A, VCE(sat) = −1.5 V (max) at IC = −5 A - higher voltage rating but 6.8× higher saturation voltage. | Suitable for 48 V systems requiring >−60 V blocking; not recommended where <−300 mV VCE(sat) is critical for efficiency. | Select MJD127G only when higher VCEO is mandatory; otherwise 2SD1803S-TL-E delivers superior conduction efficiency below 40 V. |
| SS8050DTA | SOT-23 NPN, VCEO = −25 V, IC = −1.5 A, fT = 100 MHz - smaller package, lower current, lower voltage, similar fT. | Used in low-power signal switching (<500 mA); unsuitable for 3 A load switching due to thermal and current limits. | Choose SS8050DTA for space-constrained logic-level buffering; use 2SD1803S-TL-E where ≥3 A switching and TO-252 thermal robustness are required. |
Compared with MJD127G and SS8050DTA, the 2SD1803S-TL-E uniquely balances −50 V rating, −5 A current, −220 mV VCE(sat), and TO-252 thermal performance-making it optimal for 12–24 V high-efficiency switching where both conduction loss and PCB area matter.
Availability
2SD1803S-TL-E is available at Aetrix Electronics and suitable for relay drivers, DC-DC converters, motor control circuits, and industrial inverters requiring stable component supply, RoHS-compliant packaging, and automotive-grade reliability screening.
Supply support for 2SD1803S-TL-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
onsemi (formerly ON Semiconductor) is a global semiconductor supplier specializing in energy-efficient power management, analog, sensor, and connectivity solutions for automotive, industrial, and cloud infrastructure markets.
The 2SD1803S-TL-E belongs to onsemi's general-purpose bipolar power transistor family designed for high-current, medium-voltage switching in cost-sensitive industrial and consumer power electronics.
FAQ
What is the package type and lead finish of 2SD1803S-TL-E?
The 2SD1803S-TL-E uses the TP-FA package (JEDEC TO-252, JEITA SC-63) with Pb-free (RoHS-compliant) matte tin lead finish. It ships in 700-piece embossed tape-and-reel format optimized for high-speed SMT placement. The package features an exposed emitter pad for thermal conduction to the PCB.
Does 2SD1803S-TL-E have a dual-collector configuration, and how does it affect layout?
Yes, the 2SD1803S-TL-E has two collector terminals (pins 2 and 4) internally connected. This design lowers effective on-resistance and improves current sharing. In layout, both pins must be routed to the same net-typically the high-side switching node-with equal trace width and length to avoid imbalance; the shared collector net should connect directly to the power plane.
What is the guaranteed hFE range for 2SD1803S-TL-E, and how is it binned?
The 2SD1803S-TL-E is binned to Rank T, guaranteeing hFE = 200–400 at VCE = −2 V and IC = −0.5 A. This tight distribution eliminates need for gain-compensation in base drive networks and ensures consistent switching behavior across production lots without recalibration.
Can 2SD1803S-TL-E replace 2SD1803T-E in existing designs?
Yes, the 2SD1803S-TL-E is functionally identical to 2SD1803T-E in electrical specifications and absolute maximum ratings. The difference lies only in packaging: 2SD1803S-TL-E uses TP-FA (TO-252) in tape-and-reel, while 2SD1803T-E uses TP (TO-251) in bag. No circuit or layout changes are needed beyond adapting to the TO-252 footprint.
What thermal derating applies to 2SD1803S-TL-E above 25°C case temperature?
Per the datasheet, 2SD1803S-TL-E's power dissipation derates linearly above TC = 25°C at 0.16 W/°C. At TC = 75°C, maximum allowable PC drops to 12 W. For reliable operation, maintain TC ≤ 75°C using ≥25 cm² of 2-oz copper connected to the emitter pad and collector pins via multiple thermal vias.
2SD1803S-TL-E Specifications
- Product attributes
- Attribute value
- Manufacturer:
- onsemi
- Series:
- -
- Package/Case:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Transistor Type:
- NPN
- Current - Collector (Ic) (Max):
- 5 A
- Voltage - Collector Emitter Breakdown (Max):
- 50 V
- Vce Saturation (Max) @ Ib, Ic:
- 400mV @ 150mA, 3A
- Current - Collector Cutoff (Max):
- 1µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce:
- 140 @ 500mA, 2V
- Power - Max:
- 1 W
- Frequency - Transition:
- 180MHz
- Operating Temperature:
- 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- TP-FA
2SD1803S-TL-E FAQ
1.How can I place an order for 2SD1803S-TL-E through Aetrix?
Please submit a Request for Quotation (RFQ) for 2SD1803S-TL-E on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 2SD1803S-TL-E reliable?
The price and inventory of 2SD1803S-TL-E are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 2SD1803S-TL-E is usually 5 days.
3.What payment methods are accepted for 2SD1803S-TL-E?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 2SD1803S-TL-E transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 2SD1803S-TL-E?
2SD1803S-TL-E orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 2SD1803S-TL-E order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 2SD1803S-TL-E?
For technical support, including 2SD1803S-TL-E datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 2SD1803S-TL-E requirements.
6.How does Aetrix verify that 2SD1803S-TL-E is sourced from the original manufacturer or authorized distributors?
All 2SD1803S-TL-E products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 2SD1803S-TL-E meets industry standards.
7.What is the process for return or replacement of 2SD1803S-TL-E?
All 2SD1803S-TL-E units undergo pre-shipment inspection (PSI). If there is an issue with 2SD1803S-TL-E, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 2SD1803S-TL-E part is unused and in its original packaging.
Return procedure for 2SD1803S-TL-E:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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