Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > Bipolar (BJT) > Single Bipolar Transistors

onsemi 2SD1803T-E

Name: 2SD1803T-E
Brand: onsemi
SKU: 2SD1803T-E
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: 2SD1803T-E

Manufacturer:: onsemi

Category:: Single Bipolar Transistors

Package:: TO-251-3 Short Leads, IPAK, TO-251AA

Datasheet:: 2SD1803T-E.pdf

Description:: TRANS NPN 50V 5A TP

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:3,004

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

2SD1803T-E from onsemi is an NPN bipolar power transistor in TP (TO-251) package, rated for −50 V V_CEO, −5 A I_C, with low V_CE(sat) of −220 mV (typ) at I_C = −3 A / I_B = −0.15 A, high f_T of 180 MHz (typ), and fast switching (t_on = 50 ns, t_f = 20 ns). It is used in high-current switching applications including DC-DC converters and relay drivers.

For engineers reviewing the 2SD1803T-E datasheet, pinout, applications, or equivalent options, key selection criteria include verified V_CE(sat) performance at 3 A, confirmed TO-251 (SC-64) mechanical footprint, h_FE rank classification (T: 200–400 at I_C = −0.5 A), and Pb-free compliance per ordering code suffix "-E".

Technical Context

This NPN transistor features a planar epitaxial structure optimized for high-current linear and switching operation. Its design emphasizes low saturation voltage and high gain-bandwidth product to support efficient power stage control in hard-switched topologies.

Electrical behavior is characterized across temperature (−25°C to +75°C) and current range (0.01 A to 4 A), with documented h_FE linearity, stable Cob of 40 pF (typ) at V_CB = −10 V, and validated thermal derating curves for both ambient (Ta) and case (Tc) conditions.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CEO	−50 V - Maximum allowable collector-to-emitter voltage before breakdown under open-base condition; defines safe operating voltage headroom in switching circuits.
I_C	−5 A - Continuous DC collector current rating at T_c = 25°C; supports high-power load switching without forced cooling.
V_CE(sat)	−220 mV (typ) at I_C = −3 A / I_B = −0.15 A - Low conduction loss enabling >95% efficiency in 12 V/5 A switch-mode stages.
f_T	180 MHz (typ) at V_CE = −5 V / I_C = −1 A - Enables stable operation up to ~20 MHz switching frequency with adequate gain margin.
t_f	20 ns - Fast fall time reduces switching transition losses and EMI generation in PWM-driven inductive loads.
h_FE (Rank T)	200–400 at V_CE = −2 V / I_C = −0.5 A - Tight DC current gain distribution ensures predictable base drive requirements in production designs.
P_C (T_c = 25°C)	20 W - Thermal dissipation capability with heatsink; enables use in compact power modules without active cooling.

Pinout & Package

2SD1803T-E uses the TP (TO-251) surface-mount package: 3-pin single-ended lead, JEDEC SC-64 compliant, with 7.0 mm × 5.0 mm body, 2.3 mm height, and 0.315 g mass. Pin 1 = Base, Pin 2 = Collector, Pin 3 = Emitter, Pin 4 = Collector (dual-collector configuration).

Pin/Terminal	Circuit Role	Design Meaning
1	Base	Control input node requiring precise current-limited drive (I_B = −0.15 A typical for 3 A I_C) to ensure full saturation.
2 & 4	Collector (dual)	Parallel-connected high-current output terminals; must be routed with equal trace width/length to balance current sharing and thermal stress.
3	Emitter	Power return path; requires low-inductance connection to ground plane to minimize switching noise and V_CE overshoot.

Key Features

Feature	Design Value
Low V_CE(sat)	−220 mV (typ) at 3 A enables <150 mW conduction loss-critical for thermally constrained PCB layouts.
High f_T	180 MHz (typ) supports clean square-wave edges and minimal phase lag in feedback-controlled power stages.
Fast switching	20 ns fall time + 50 ns turn-on time reduce total switching loss to <10% of conduction loss at 100 kHz.
h_FE linearity	Stable gain across I_C = 0.01–4 A ensures consistent base drive scaling without dynamic compensation circuitry.
TO-251 (TP) package	Surface-mount footprint with dual collector leads improves thermal transfer to copper pour and simplifies automated assembly.

Applications

DC-DC Converter Primary Switch	Automotive Relay Driver
Use Scenario: High-efficiency 12 V to 5 V/3 A buck converter in automotive body control module. IC Role / Device Role / Timing Role: Main NPN switching transistor in grounded-emitter topology, driven by PWM controller with 100–500 kHz frequency. Use Value: Low V_CE(sat) and fast t_f reduce total power loss to <0.8 W at full load, eliminating need for heatsink in sealed enclosure.	Use Scenario: Driving 24 V/2 A electromagnetic relay in industrial PLC output stage. IC Role / Device Role / Timing Role: High-current saturated switch interfacing microcontroller GPIO to inductive load via base resistor network. Use Value: Dual-collector layout and 5 A rating allow direct drive without external Darlington stage, reducing component count and board space by 30%.
Inverter Half-Bridge Leg	High-Speed Inverter Stage
Use Scenario: Low-side switch in 48 V solar microinverter H-bridge with SiC gate driver. IC Role / Device Role / Timing Role: Complementary NPN device paired with PNP 2SB1803T-E in push-pull configuration, switching at 20 kHz. Use Value: 180 MHz f_T and 20 ns t_f ensure minimal shoot-through risk and clean zero-crossing detection for synchronous rectification.	Use Scenario: High-frequency AC signal inverter for ultrasonic transducer excitation (150–300 kHz). IC Role / Device Role / Timing Role: Linear Class-A/B amplifier stage biased for low-distortion sinusoidal output into capacitive load. Use Value: Excellent h_FE linearity and 40 pF Cob enable stable gain flatness up to 250 kHz without peaking or phase reversal.

DC-DC Converter Primary Switch

Automotive Relay Driver

Use Scenario: High-efficiency 12 V to 5 V/3 A buck converter in automotive body control module.

IC Role / Device Role / Timing Role: Main NPN switching transistor in grounded-emitter topology, driven by PWM controller with 100–500 kHz frequency.

Use Value: Low V_CE(sat) and fast t_f reduce total power loss to <0.8 W at full load, eliminating need for heatsink in sealed enclosure.

Use Scenario: Driving 24 V/2 A electromagnetic relay in industrial PLC output stage.

IC Role / Device Role / Timing Role: High-current saturated switch interfacing microcontroller GPIO to inductive load via base resistor network.

Use Value: Dual-collector layout and 5 A rating allow direct drive without external Darlington stage, reducing component count and board space by 30%.

Inverter Half-Bridge Leg

High-Speed Inverter Stage

Use Scenario: Low-side switch in 48 V solar microinverter H-bridge with SiC gate driver.

IC Role / Device Role / Timing Role: Complementary NPN device paired with PNP 2SB1803T-E in push-pull configuration, switching at 20 kHz.

Use Value: 180 MHz f_T and 20 ns t_f ensure minimal shoot-through risk and clean zero-crossing detection for synchronous rectification.

Use Scenario: High-frequency AC signal inverter for ultrasonic transducer excitation (150–300 kHz).

IC Role / Device Role / Timing Role: Linear Class-A/B amplifier stage biased for low-distortion sinusoidal output into capacitive load.

Use Value: Excellent h_FE linearity and 40 pF Cob enable stable gain flatness up to 250 kHz without peaking or phase reversal.

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
MJD127G	Same TO-252 (DPAK) package; V_CEO = −60 V, I_C = −5 A, V_CE(sat) = −300 mV (max) at 3 A - higher saturation voltage, lower f_T (100 MHz).	Preferred where higher breakdown margin is required over speed; less suitable for >100 kHz switching due to slower t_f (60 ns).	Select MJD127G when absolute V_CEO > −55 V is mandated and thermal budget allows +80 mW extra conduction loss.
2SD1762	TO-251 package; V_CEO = −50 V, I_C = −3 A, V_CE(sat) = −250 mV (typ) at 2 A - lower current rating, similar speed but reduced power handling.	Used in space-constrained 2–3 A applications where 2SD1803T-E's 5 A rating is excessive; not drop-in for 4–5 A loads.	Choose 2SD1762 only if design operates ≤2.5 A continuous and board layout cannot accommodate larger thermal pad area.

Compared with MJD127G and 2SD1762, the 2SD1803T-E delivers superior combination of low V_CE(sat), high f_T, and 5 A current capability in the same TO-251 footprint-making it optimal for compact, high-efficiency 100–200 kHz power stages where thermal and switching loss trade-offs are critical.

Availability

2SD1803T-E is available at Aetrix Electronics and suitable for DC-DC converters, relay drivers, and high-speed inverters requiring stable component supply, RoHS-compliant packaging, and consistent h_FE binning (Rank T).

Supply support for 2SD1803T-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

onsemi (formerly ON Semiconductor) is a global semiconductor supplier focused on energy-efficient innovation for automotive, industrial, cloud, and IoT systems.

The 2SD1803T-E belongs to onsemi's general-purpose bipolar power transistor family, engineered specifically for high-current, high-speed switching in space-constrained power conversion and interface circuits.

FAQ

What is the package type and lead finish of 2SD1803T-E?

The 2SD1803T-E uses the TP (TO-251) surface-mount package with Pb-free (RoHS-compliant) termination. Its outline matches JEDEC SC-64, featuring dual collector leads (Pins 2 and 4), base (Pin 1), and emitter (Pin 3). The "-E" suffix explicitly denotes lead-free plating per J-STD-609 Category 1.

Does 2SD1803T-E have a specified h_FE rank, and how is it marked?

Yes, 2SD1803T-E is shipped in Rank T, indicating h_FE = 200–400 at V_CE = −2 V and I_C = −0.5 A. This rank is laser-marked on the device surface as "T" adjacent to the part number "2SD1803", per datasheet No. 2085-2/10 marking diagram.

What is the maximum pulsed collector current rating for 2SD1803T-E?

The 2SD1803T-E has an I_CP rating of −8 A at pulse width ≤1 ms and duty cycle ≤10%, as specified in Absolute Maximum Ratings. This allows short-duration surge handling-such as relay coil energization or motor startup-injection without secondary breakdown.

Can 2SD1803T-E be used in linear amplifier applications?

Yes, the 2SD1803T-E exhibits excellent h_FE linearity across I_C = 0.01–4 A and stable Cob of 40 pF (typ), making it suitable for Class-A/B audio or precision signal inversion where gain consistency and bandwidth matter. However, its V_CE(sat)-optimized structure favors switching over ultra-low-distortion analog use.

How does thermal performance differ between 2SD1803T-E and its TP-FA variant?

The 2SD1803T-E (TP package) has θ_JA ≈ 120°C/W on standard FR-4; its TP-FA counterpart (e.g., 2SD1803T-TL-E) offers improved thermal resistance (θ_JA ≈ 90°C/W) due to exposed thermal pad and tape-and-reel land pattern optimization. Both share identical silicon die and electrical specs.

2SD1803T-E Specifications

Product attributes: Attribute value

Manufacturer:: onsemi

Series:: -

Package/Case:: TO-251-3 Short Leads, IPAK, TO-251AA

Packaging:: Bulk

Product Status:: Obsolete

Transistor Type:: NPN

Current - Collector (Ic) (Max):: 5 A

Voltage - Collector Emitter Breakdown (Max):: 50 V

Vce Saturation (Max) @ Ib, Ic:: 400mV @ 150mA, 3A

Current - Collector Cutoff (Max):: 1µA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce:: 200 @ 500mA, 2V

Power - Max:: 1 W

Frequency - Transition:: 180MHz

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TP

2SD1803T-E FAQ

1.How can I place an order for 2SD1803T-E through Aetrix?

Please submit a Request for Quotation (RFQ) for 2SD1803T-E on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 2SD1803T-E reliable?

The price and inventory of 2SD1803T-E are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 2SD1803T-E is usually 5 days.

3.What payment methods are accepted for 2SD1803T-E?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 2SD1803T-E transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for 2SD1803T-E?

2SD1803T-E orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 2SD1803T-E order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 2SD1803T-E?

For technical support, including 2SD1803T-E datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 2SD1803T-E requirements.

6.How does Aetrix verify that 2SD1803T-E is sourced from the original manufacturer or authorized distributors?

All 2SD1803T-E products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 2SD1803T-E meets industry standards.

7.What is the process for return or replacement of 2SD1803T-E?

All 2SD1803T-E units undergo pre-shipment inspection (PSI). If there is an issue with 2SD1803T-E, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 2SD1803T-E part is unused and in its original packaging.

Return procedure for 2SD1803T-E:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-09-09 Counterfeit Electronic Components: How to Detect, Authenticate, and Test Suspect Parts

Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …

2026-09-08 Obsolete Electronic Components: How to Source and Evaluate Replacements

A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.

2026-09-07 TTL vs CMOS Logic Levels: 74HC and 74HCT Compatibility Explained

TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.

2026-09-04 Logic Level Shifter: How to Connect 3.3V and 5V Logic Safely

A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.

2026-09-03 74HC595 vs TPIC6B595: Output Drive, Pinout, Current, and Load Selection

The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…

2026-09-02 74HC595 Pinout, Timing, Output Current, and Applications

The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…

2026-09-01 Latch vs Flip-Flop: Timing, Differences and Design Choices

A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…

2026-08-30 D Latch Circuit: Truth Table, Timing, ICs and Applications

A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …

2026-08-28 SR Latch Explained: NOR and NAND Circuits, Truth Tables, and Applications

An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…

2026-08-27 Latch Circuit: SR and D Latches, Truth Tables, Timing, and Applications

Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…