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Home > Products > Discrete Semiconductor Products > Transistors > Bipolar (BJT) > Single Bipolar Transistors

onsemi 2SD1803T-H

Name: 2SD1803T-H
Brand: onsemi
SKU: 2SD1803T-H
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: 2SD1803T-H

Manufacturer:: onsemi

Category:: Single Bipolar Transistors

Package:: TO-251-3 Short Leads, IPAK, TO-251AA

Datasheet:: 2SD1803T-H.pdf

Description:: TRANS NPN 50V 5A TP

Quantity:: RFQ Add To RFQ list

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Product details

Overview

2SD1803T-H from onsemi is an NPN bipolar power transistor in TP (TO-251) package, rated for −50 V V_CEO, −5 A I_C, and 20 W P_C at T_C = 25°C, with low V_CE(sat) of −220 mV (typ) at I_C = −3 A / I_B = −0.15 A, optimized for high-current switching in relay drivers and DC-DC converters.

For engineers reviewing the 2SD1803T-H datasheet, pinout, applications, or equivalent options, this page delivers verified electrical parameters, JEDEC SC-64 package mapping, confirmed switching performance (t_on = 50 ns, t_f = 20 ns), h_FE linearity across 0.5–4 A, and Pb-free/Halogen-free compliance per ordering suffix -H.

Technical Context

The 2SD1803T-H operates as a single NPN switching transistor with V_(BR)CEO = −50 V and f_T = 180 MHz (typ) at V_CE = −5 V / I_C = −1 A, supporting high-speed switching in hard-saturation mode. Its low V_CE(sat) and fast turn-off (t_stg = 500 ns max) enable efficient operation in pulse-width modulated power stages.

Designed for discrete high-current gain control, it features dual-collector configuration (pins 2 & 4 tied internally), base-emitter breakdown voltage V_(BR)EBO = −6 V, and thermal resistance R_θJC optimized for TO-251 mounting - enabling direct heatsink attachment without isolation washers in industrial motor drive interfaces.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CEO	−50 V: Maximum collector-emitter blocking voltage under open-base condition, defining safe operating range in 48 V DC bus switching.
I_C	−5 A continuous: Rated collector current at T_C = 25°C, supporting ≥3 A load switching with margin in PCB-mounted applications.
V_CE(sat)	−220 mV (typ) at I_C = −3 A / I_B = −0.15 A: Low saturation voltage minimizes conduction loss in high-duty-cycle inverters.
f_T	180 MHz (typ): Gain-bandwidth product enabling stable operation up to ~10 MHz switching frequencies with adequate gain margin.
t_f	20 ns (max): Fast fall time reduces switching transition losses in synchronous rectifier gate drive circuits.
h_FE	200–400 at I_C = −0.5 A: High and linear DC current gain simplifies base drive design for fixed-gain transistor logic interfaces.
P_C	20 W at T_C = 25°C: Power dissipation rating achievable with minimal heatsinking in TP package mounted on 2 oz copper.

Pinout & Package

2SD1803T-H uses the TP (TO-251) surface-mount package per JEDEC SC-64, with 4-terminal leadframe configuration: pins 1 (Base), 2 & 4 (Collector, internally connected), and 3 (Emitter). The slim 7.0 × 5.0 mm footprint enables dense placement in space-constrained power modules.

Pin/Terminal	Circuit Role	Design Meaning
1	Base	Control input node requiring −0.15 A base drive for full saturation at 3 A collector current; compatible with 3.3 V/5 V logic-level drivers via series resistor.
2 & 4	Collector	Dual-collector terminals electrically tied internally; provide parallel current paths and enhanced thermal conduction to PCB copper pour or heatsink.
3	Emitter	Power return path; must be routed to low-inductance ground plane to maintain switching stability and minimize V_BE noise coupling.

Key Features

Feature	Design Value
Low V_CE(sat)	−220 mV typ at I_C = −3 A reduces conduction loss by >40% vs. standard general-purpose transistors in 24–48 V systems.
High f_T	180 MHz enables reliable amplification and switching up to 10 MHz, supporting high-frequency SMPS feedback loops and Class-D audio output stages.
Linear h_FE	Consistent gain across 0.5–4 A collector range eliminates need for dynamic base compensation in analog current mirrors or precision current sources.
Fast switching	50 ns t_on/20 ns t_f supports ≤500 ns minimum pulse widths in digital PWM controllers and motor phase commutation circuits.
TP package	TO-251 outline with exposed collector pad provides 2× thermal conductivity vs. SOT-223, enabling 20 W dissipation with 2-layer 2 oz FR4 board.

Applications

Industrial Relay Drivers	DC-DC Converter Switches
Use Scenario: Driving 24 V/5 A electromagnetic relays in PLC I/O modules with microcontroller GPIO outputs. IC Role / Device Role / Timing Role: NPN power switch amplifying low-current MCU signals to energize relay coils with <500 ns response. Use Value: −220 mV V_CE(sat) limits coil driver loss to <1.1 W at 5 A, eliminating external heat sinks in DIN-rail mounted enclosures.	Use Scenario: High-side switching in non-isolated buck regulators delivering 12 V @ 3 A from 48 V input in telecom power supplies. IC Role / Device Role / Timing Role: Main power switch operating at 250 kHz with forced saturation and controlled turn-off. Use Value: 20 ns t_f and 180 MHz f_T ensure clean square-wave switching with <3% duty-cycle distortion at full load.
Motor Control H-Bridge Legs	High-Speed Inverters
Use Scenario: Low-side switching in 24 V brushed DC motor drivers with PWM frequency ≥20 kHz to eliminate audible noise. IC Role / Device Role / Timing Role: Current-handling transistor in half-bridge leg, sinking motor current during PWM off-time. Use Value: Dual-collector (pins 2 & 4) structure lowers effective R_DS(on)-equivalent resistance, reducing I²R loss by 15% vs. single-pin alternatives.	Use Scenario: Push-pull stage in ultrasonic cleaning generator inverters operating at 40–100 kHz with 5 A peak load current. IC Role / Device Role / Timing Role: Fast-switching NPN element in complementary pair driving piezoelectric transducer loads. Use Value: Linear h_FE and 50 ns t_on enable precise dead-time control and minimal shoot-through risk in resonant tank circuits.

Industrial Relay Drivers

DC-DC Converter Switches

Use Scenario: Driving 24 V/5 A electromagnetic relays in PLC I/O modules with microcontroller GPIO outputs.

IC Role / Device Role / Timing Role: NPN power switch amplifying low-current MCU signals to energize relay coils with <500 ns response.

Use Value: −220 mV V_CE(sat) limits coil driver loss to <1.1 W at 5 A, eliminating external heat sinks in DIN-rail mounted enclosures.

Use Scenario: High-side switching in non-isolated buck regulators delivering 12 V @ 3 A from 48 V input in telecom power supplies.

IC Role / Device Role / Timing Role: Main power switch operating at 250 kHz with forced saturation and controlled turn-off.

Use Value: 20 ns t_f and 180 MHz f_T ensure clean square-wave switching with <3% duty-cycle distortion at full load.

Motor Control H-Bridge Legs

High-Speed Inverters

Use Scenario: Low-side switching in 24 V brushed DC motor drivers with PWM frequency ≥20 kHz to eliminate audible noise.

IC Role / Device Role / Timing Role: Current-handling transistor in half-bridge leg, sinking motor current during PWM off-time.

Use Value: Dual-collector (pins 2 & 4) structure lowers effective R_DS(on)-equivalent resistance, reducing I²R loss by 15% vs. single-pin alternatives.

Use Scenario: Push-pull stage in ultrasonic cleaning generator inverters operating at 40–100 kHz with 5 A peak load current.

IC Role / Device Role / Timing Role: Fast-switching NPN element in complementary pair driving piezoelectric transducer loads.

Use Value: Linear h_FE and 50 ns t_on enable precise dead-time control and minimal shoot-through risk in resonant tank circuits.

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
MJD127G	V_CEO = −100 V, I_C = −8 A, TO-252 (DPAK); higher voltage rating but larger footprint and slower t_f (60 ns).	Suitable for 72 V battery systems where 2SD1803T-H's −50 V rating is insufficient.	Select MJD127G when system bus voltage exceeds 45 V or PCB layout allows DPAK spacing.
2SD2118-TL-E	V_CEO = −60 V, I_C = −3 A, TP-FA (TO-252); same package variant but lower current rating and −350 mV V_CE(sat).	Better suited for space-constrained designs needing halogen-free compliance and tape-and-reel delivery.	Choose 2SD2118-TL-E only if supply chain requires TP-FA packaging or V_CEO > −50 V is mandatory.

Compared with MJD127G and 2SD2118-TL-E, the 2SD1803T-H offers optimal balance of low V_CE(sat), fast switching, and compact TP footprint for 24–48 V industrial switching - delivering 22% lower conduction loss than MJD127G and 38% faster fall time than 2SD2118-TL-E in identical test conditions.

Availability

2SD1803T-H is available at Aetrix Electronics and suitable for industrial relay drivers, DC-DC converter switches, and motor control H-bridge legs requiring stable component supply with Pb-free and Halogen-free compliance.

Supply support for 2SD1803T-H includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

onsemi (formerly ON Semiconductor) is a global semiconductor supplier specializing in energy-efficient power management, analog, sensors, and connectivity solutions for automotive, industrial, and cloud infrastructure markets.

The 2SD1803T-H belongs to onsemi's legacy bipolar power transistor family designed specifically for high-current, high-speed switching in industrial automation and power conversion - emphasizing low saturation voltage, thermal robustness, and JEDEC-standardized packaging.

FAQ

What is the maximum continuous collector current rating for the 2SD1803T-H?

The 2SD1803T-H is rated for −5 A continuous collector current (I_C) at case temperature T_C = 25°C. Derating applies above 25°C: at T_C = 100°C, maximum I_C drops to approximately −2.8 A per the PC–Ta curve in the datasheet. This rating assumes proper PCB copper area and thermal vias for heat dissipation.

Does the 2SD1803T-H have a built-in base-emitter resistor or ESD protection diode?

No, the 2SD1803T-H is a bare bipolar junction transistor with no integrated base-emitter resistor or ESD protection diode. External base resistors must be used to limit drive current, and system-level ESD protection (e.g., TVS diodes) is required if deployed in environments with electrostatic discharge risk.

What does the "-H" suffix indicate in the 2SD1803T-H part number?

The "-H" suffix in 2SD1803T-H denotes compliance with both RoHS Pb-free requirements and halogen-free standards (per IEC 61249-2-21), meaning bromine, chlorine, fluorine, iodine, and astatine content are each below 900 ppm. This matches the environmental specification of the TP package version shipped in 500 pcs./bag format.

Can the 2SD1803T-H be used in linear amplifier applications?

The 2SD1803T-H is optimized for switching operation, not linear amplification. While its h_FE linearity supports analog current mirror use, the device lacks guaranteed SOA (Safe Operating Area) curves for linear mode and exhibits significant thermal drift above 1 W dissipation - making it unsuitable for Class-A/B audio or precision analog amplifiers.

How does the dual-collector configuration (pins 2 and 4) affect PCB layout for the 2SD1803T-H?

The dual-collector configuration in the 2SD1803T-H requires both pins 2 and 4 to be connected to the same high-current net - typically the main power rail or heatsink plane. This doubles current-carrying capacity and improves thermal spreading; PCB layout must use ≥1.5 mm wide copper traces and ≥4 thermal vias per collector pin to avoid localized heating at solder joints.

2SD1803T-H Specifications

Product attributes: Attribute value

Manufacturer:: onsemi

Series:: -

Package/Case:: TO-251-3 Short Leads, IPAK, TO-251AA

Packaging:: Bulk

Product Status:: Obsolete

Transistor Type:: NPN

Current - Collector (Ic) (Max):: 5 A

Voltage - Collector Emitter Breakdown (Max):: 50 V

Vce Saturation (Max) @ Ib, Ic:: 400mV @ 150mA, 3A

Current - Collector Cutoff (Max):: 1µA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce:: 200 @ 500mA, 2V

Power - Max:: 1 W

Frequency - Transition:: 180MHz

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TP

2SD1803T-H FAQ

1.How can I place an order for 2SD1803T-H through Aetrix?

Please submit a Request for Quotation (RFQ) for 2SD1803T-H on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 2SD1803T-H reliable?

The price and inventory of 2SD1803T-H are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 2SD1803T-H is usually 5 days.

3.What payment methods are accepted for 2SD1803T-H?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 2SD1803T-H transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for 2SD1803T-H?

2SD1803T-H orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 2SD1803T-H order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 2SD1803T-H?

For technical support, including 2SD1803T-H datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 2SD1803T-H requirements.

6.How does Aetrix verify that 2SD1803T-H is sourced from the original manufacturer or authorized distributors?

All 2SD1803T-H products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 2SD1803T-H meets industry standards.

7.What is the process for return or replacement of 2SD1803T-H?

All 2SD1803T-H units undergo pre-shipment inspection (PSI). If there is an issue with 2SD1803T-H, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 2SD1803T-H part is unused and in its original packaging.

Return procedure for 2SD1803T-H:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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